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    TRANSISTOR F 10 Search Results

    TRANSISTOR F 10 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR F 10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Fotodarlington Transistor im Sidelooker-Gehäuse Photodarlington Transistor in Sidelooker-Package SFH 3130 F Vorläufige Daten / Preliminary Data Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik


    Original     		PDF Q62702-P5250 suita10 GEOY6976

    IC 3130

    Abstract: Q62702-P5250 of ic 3130 SFH3130F GEO06976 4110 opto
    Text: Fotodarlington Transistor im Sidelooker-Gehäuse Photodarlington Transistor in Sidelooker-Package SFH 3130 F Vorläufige Daten / Preliminary Data Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik


    Original     		PDF E00386 OHF00383 GEO06976 IC 3130 Q62702-P5250 of ic 3130 SFH3130F GEO06976 4110 opto

    power transistor 2n3055

    Abstract: transistor 2N3055 2n3055 circuit 2N3055 TO-3 2N3055
    Text: Silicon Power Transistor 2N3055 Technical Data Typical Applications : These devices are designed for general purpose switching and amplifier applications. Specification Fetaures : F F F F Complementary NPN Silicon Power Transistor 15 Amp / 60 V device in TO-204AA [ TO-3 ] package


    Original     		PDF 2N3055 O-204AA power transistor 2n3055 transistor 2N3055 2n3055 circuit 2N3055 TO-3 2N3055

    IC 3130

    Abstract: 4110 P525 Q62702-P5250 GEOY6976
    Text: Fotodarlington Transistor im Sidelooker-Gehäuse Photodarlington Transistor in Sidelooker-Package SFH 3130 F Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik


    Original     		PDF

    2N3055H

    Abstract: 2N3055H+RCA
    Text: Silicon Power Transistor 2N3055H Technical Data Typical Applications : These devices are designed for general purpose switching and amplifier applications. Specification Fetaures : F Complementary NPN Silicon Power Transistor F 15 Amp / 100 V device in TO-204AA [ TO-3 ] package


    Original     		PDF 2N3055H O-204AA 2N3055H 2N3055H+RCA

    transistor SD335

    Abstract: SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339
    Text: RFT Beschreibung Si-npn-Planar-Epitaxie, TO39 Si-npn-Planar-EpitaxieSC116 NF-Transistor Si-npn-Planar-EpitaxieSC117 NF-Transistor Si-npn-Planar-EpitaxieSC118 NF-Transistor Si-npn-Planar-EpitaxieSC119 NF-Transistor Si-npn-Planar-EpitaxieSC236 NF-Transistor für Vorund Treiberstufen


    Original     		PDF Si-npn-Planar-EpitaxieSC116 Si-npn-Planar-EpitaxieSC117 Si-npn-Planar-EpitaxieSC118 Si-npn-Planar-EpitaxieSC119 Si-npn-Planar-EpitaxieSC236 Si-npn-Planar-EpitaxieSC237 Si-npn-Planar-EpitaxieSC238 VorSC239 Si-pnp-Planar-EpitaxieSC307 Si-pnp-Planar-EpitaxieSC308 transistor SD335 SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339

    97CC

    Abstract: transistor ESM 16 transistor ESM 30 ESM18 transistor ESM 18
    Text: ESM 18 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE High current fast switching transistor Transistor de commutation rapide fort courant V CEO 100 V Amplification BF ou H F grands signaux •c 25 A Thermal fatigue inspection


    OCR Scan     		PDF CB-19 97CC transistor ESM 16 transistor ESM 30 ESM18 transistor ESM 18

    2SK852

    Abstract: jb 5531 JE 33 26L55 T1IG
    Text: NEC o ^ n y ^ Ju n ctio n Field Effect Transistor i & m t e w m m N-Channel Silicon Junction Field-Effect Transistor Audio Frequency Amplifier f t W f t High gm < ntzshSi f i j f t o ¡ S ita . V o gdo> r - M i -c r < + •/ 7 u > = 10 V, V<; s = 0 1.25 + 0.1


    OCR Scan     		PDF

    BFY90

    Abstract: Scans-0010548 BFy 90 transistor
    Text: IMPIM-Transistor fü r A n ten n en verstärker B F Y 90 BFY 90 ist ein epitaktischer NPN-Silizium-HF-Transistor im Gehäuse 18 A 4 DIN 41 876 TO-72 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Transistor ist für allgemeine Anwendungen bis in den GHz-Bereich geeignet z.B. für Antennen- und Hochfrequenz­


    OCR Scan     		PDF BFY90 Q62702-F297 Scans-0010548 BFy 90 transistor

    PRW 200

    Abstract: transistor VCE 1000V CMK2100 1bw transistor
    Text: 7 ^ 3 < ? -3 / F F 100 R 10 K 52E EUPEC Transistor Transistor ]> • aM D SST? Thermische Eigenschaften Rthjc Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VCES Maximum rated values 1000 V 100 A 751 MUPEC Thermal properties DC, pro Baustein / per module


    OCR Scan     		PDF 34D32CI7 PRW 200 transistor VCE 1000V CMK2100 1bw transistor

    2sc2757

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SC2757 UHF/VHF OSCILLATOR AND VHF M IXER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS T he 2SC2757 is an NPN silicon e pita xial transistor intended to r use as V H F in millimeters and U H F oscillators and a V H F m ix e r in a tuner o f a T V receiver.


    OCR Scan     		PDF 2SC2757 2SC2757

    DIODE S2E

    Abstract: s2e transistor
    Text: 7 ^ 3 < ? - 3 / F F 100 R 10 K 52E EUPEC Transistor Transistor ]> • aM D SST? Thermische Eigenschaften Rthjc Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VCES Maximum rated values 1000 V 100 A 751 MUPEC Thermal properties DC, pro Baustein / per module


    OCR Scan     		PDF

    2SK520

    Abstract: transistor k43 2SK520 K44 2SK425 k41 transistor transistor k42 transistor k41 2SK520 K43 marking k42 mwk41
    Text: Junction Field Effect Transistor 2SK520 zt>nnitosikh^ > > * 9 N-Channel Silicon Junction Field Effect Transistor High Frequency Amplifier 2S 520U K n . - 7- m f f l ? 4 7 ° k M + * ~ i - < n R F T > - f m & £ v r - - n i 7' PACKAGE DIMENSIONS Unit : mm)


    OCR Scan     		PDF tt2SK238, 2SK425# 2SK520 transistor k43 2SK520 K44 2SK425 k41 transistor transistor k42 transistor k41 2SK520 K43 marking k42 mwk41

    2SC1729

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1729 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC 1729 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers on V H F band mobile radio amplications. Dimensions in mm FEATURES • High power gain: Gpe > 10dB


    OCR Scan     		PDF 2SC1729 2SC1729 175MHz.

    FF15R10K

    Abstract: No abstract text available
    Text: 7 *39-3/ F F 15R 10K SSE EUPEC D Ü D D lf iE Thermische Eigenschaften Transistor Transistor 34032^7 i RthJC Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1000 V 15 A RthCK lc 54b «U PEC Thermal properties DC, pro Baustein/per module


    OCR Scan     		PDF FF15R10K 34D32CI7 FF15R10K

    Untitled

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor BUK543-100A/B Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level f ield-effect power transistor in a plastic full-pack


    OCR Scan     		PDF BUK543-100A/B BUK543 -100A -100B PINNING-SOT186

    2SC2352

    Abstract: z239
    Text: NEC SILICON TRANSISTOR BfCTRON OEVKE 2SC2352 VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS The 2SC2352 is an NPN silicon epitaxial transistor intended fo r use as a in millimeters inches V H F m ixer in a tun er o f a T V receiver.


    OCR Scan     		PDF 2SC2352 2SC2352 11-i-- z239

    TRANSISTOR K 314

    Abstract: antenne
    Text: BFS 55 Nicht für N e u e n tw ick lu n g IMPIM -Transistor fü r H F -A n w e n d u n g e n bis in den G H z -B e re ic h B F S 55 ist ein N PN -Silizium -H F-Transistor im Gehäuse 18 A 4 D IN 41 876 T O -7 2 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Transistor ist besonders für H F -A n ­


    OCR Scan     		PDF Q62702-F272 TRANSISTOR K 314 antenne

    transistor buv 90

    Abstract: BCY 85 Q60203-Y66 BCY 66
    Text: N PN -Transistor fü r rauscharm e N F -V o rs tu fe n BCY 66 BCY 66 ist ein epitaktischer NPN-Silizium-Planar-Transistor im Gehäuse 18 A3 DIN 41876 TO-18 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Der Transistor ist für besonders rauscharme NF-Vorstufen vorgesehen. (Komplementärtransistor dazu B C Y 67).


    OCR Scan     		PDF Q60203-Y66 transistor buv 90 BCY 85 Q60203-Y66 BCY 66

    u101b

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR _ j f P A 101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES OUTLINE DIMENSIONS Units in mm • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: • OUTSTANDING hFE LINEARITY • TW O PACKAGE O PTIO NS: (Each Transistor has fr 9 GHz)


    OCR Scan     		PDF uPA101B 14-pin tPA101G u101b

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F 4bE D • b3b72SH MOTOROLA 3 T - 3 3 - 1 3 ■I SEM ICONDUCTOR TECHNICAL DATA 2N6166 T h e R F L in e 100 W A T T S - 150 MHz R F POWER TRANSISTOR NPN SILICON R F POWER TRANSISTOR NPN S IL IC O N designed f o r V H F p o w e r a m p lifie r a p p lic a tio n s in m ilita ry and in ­


    OCR Scan     		PDF b3b72SH 2N6166

    BFR15A

    Abstract: 200MHZ S70C
    Text: IMPN -Transistor für rauscharme Breitband- und Antennenverstärker BFR 15A B F R 1 5 A ist ein epitaktischer NPN-Silizium-Planar-HF-Transistor im Gehäuse 18A 4 DIN 41876 TO-72 für allgemeine Verwendung bis in den GHz-Bereich, z. B. für rauscharme Breitband- und Antennenverstärker.


    OCR Scan     		PDF BFR15A Q62702-F460 200MHZ 200MHZ S70C

    em 6695

    Abstract: LA 8873
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5184 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low Noise • N F = 1.3 dB typ. @ Vce = 2 V, Ic = 3 mA, f = 2 GHz • N F = 1.3 dB typ.


    OCR Scan     		PDF 2SC5184 SC-70 2SC5184-T1 2SC5184-T2 em 6695 LA 8873

    MPS6507

    Abstract: transistor 911
    Text: MPS6507 SILICON NPN SILICON VH F/U H F AM PLIFIER TRANSISTOR NPN SILICON A N N U LA R V H F/U H F A M PLIFIER TRANSISTOR . . designed for use in V H F /U H F am plifier applications. High Collector Em itter Breakdown Voltage B V c e o “ 20 V d c (Min) @ 1c = 1 -Q m Adc


    OCR Scan     		PDF MPS6507 100MAdc, 10mAdc, MPS6507 transistor 911