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    TRANSISTOR EQUIVALENT CIRCUIT Search Results

    TRANSISTOR EQUIVALENT CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR EQUIVALENT CIRCUIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1955

    Abstract: HN7G01FE SSM3K03FE
    Text: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Unit: mm Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Q1 (Transistor) Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FE 2SA1955 SSM3K03FE HN7G01FE

    2SC5376F

    Abstract: HN7G10FE SSM3K03FE 2sC537
    Text: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Unit: mm Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Q1 (transistor) Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G10FE 2SC5376F SSM3K03FE HN7G10FE 2sC537

    2SA1955

    Abstract: HN7G01FE SSM3K03FE
    Text: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FE 2SA1955 SSM3K03FE HN7G01FE

    Untitled

    Abstract: No abstract text available
    Text: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FE 2SA1955 SSM3K03FE

    Untitled

    Abstract: No abstract text available
    Text: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G10FE 2SC5376F SSM3K03FE

    Untitled

    Abstract: No abstract text available
    Text: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G10FE 2SC5376F SSM3K03FE

    2SA1955

    Abstract: 2SK1830 HN7G01FU HIGH POWER MOSFET TOSHIBA 2SK1830 MOSFET
    Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FU 2SA1955 2SK1830 HN7G01FU HIGH POWER MOSFET TOSHIBA 2SK1830 MOSFET

    HN7G01FU

    Abstract: 2SA1955 2SK1830 Power MOSFET, toshiba HIGH POWER MOSFET TOSHIBA
    Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent · Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FU 2SA1955 2SK1830 HN7G01FU Power MOSFET, toshiba HIGH POWER MOSFET TOSHIBA

    Untitled

    Abstract: No abstract text available
    Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FU 2SA1955 2SK1830

    2SA1955

    Abstract: 2SK1830 HN7G01FU 2SK1830 MOSFET
    Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FU 2SA1955 2SK1830 HN7G01FU 2SK1830 MOSFET

    702 transistor smd code

    Abstract: HTT1132E 853 smd 6-pin 2SC5849 2SC5872 equivalent ZO 607 smd transistor 805 239 0532 smd transistor 718 transistor smd 661 752
    Text: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872


    Original     		PDF HTT1132E REJ03G0008-0100Z 2SC5872 2SC5849 702 transistor smd code HTT1132E 853 smd 6-pin 2SC5849 2SC5872 equivalent ZO 607 smd transistor 805 239 0532 smd transistor 718 transistor smd 661 752

    equivalent ZO 607

    Abstract: 2sc5872 2SC5849 HTT1132E 702 smd transistor
    Text: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872


    Original     		PDF HTT1132E REJ03G0008-0100Z 2SC5872 2SC5849 equivalent ZO 607 2sc5872 2SC5849 HTT1132E 702 smd transistor

    DTA143X

    Abstract: DTA143XL
    Text: UTC DTA143X PNP DIGITAL TRANSISTOR PNP DIGITAL TRANSISTOR FEATURES * Built-in bias thin film resistors per equivalent circuit * Easy on/off applications EQUIVALENT CIRCUIT 1 OUT R1 IN R2 TO-92 GND + IN OUT 1: GND 2: OUT 3: IN *Pb-free plating product number:DTA143XL


    Original     		PDF DTA143X DTA143XL QW-R201-076 DTA143X DTA143XL

    DTA143X

    Abstract: DTA143XL
    Text: UTC DTA143X PNP DIGITAL TRANSISTOR PNP DIGITAL TRANSISTOR FEATURES * Built-in bias thin film resistors per equivalent circuit * Easy on/off applications 1 EQUIVALENT CIRCUIT OUT R1 IN TO-92SP R2 GND + IN OUT 1: GND 2: OUT 3: IN *Pb-free plating product number:DTA143XL


    Original     		PDF DTA143X O-92SP DTA143XL QW-R216-014 DTA143X DTA143XL

    smd transistor marking SL6

    Abstract: SMD MARKING CODE hitachi HTT1213S marking code s21 SMD Transistor marking code e2 SMD Transistor SMD MARKING CODE sg 2SC5700 Hitachi transistor MARKING CODE SMD IC TRANSISTOR SMD fr
    Text: HTT1213S Silicon NPN Epitaxial Twin Transistor ADE-208-1448 Z Preliminary Rev. 0 Aug. 2001 Features • Include 2 transistors in a small size SMD package: SMFPAK–6 (6 Leads: 1.5 x 1.1 x 0.55 mm) Q1: Equivalent Buffer Transistor Q2: Equivalent OSC Transistor


    Original     		PDF HTT1213S ADE-208-1448 2SC5700 D-85622 D-85619 smd transistor marking SL6 SMD MARKING CODE hitachi HTT1213S marking code s21 SMD Transistor marking code e2 SMD Transistor SMD MARKING CODE sg 2SC5700 Hitachi transistor MARKING CODE SMD IC TRANSISTOR SMD fr

    2SC5849

    Abstract: 2SC5700 HTT1127E Transistors smd mark code 15 S2127 HITACHI SMD TRANSISTORS
    Text: HTT1127E Silicon NPN Epitaxial Twin Transistor ADE-208-1540 Z Rev.0 Nov. 2002 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5700


    Original     		PDF HTT1127E ADE-208-1540 2SC5700 2SC5849 D-85622 D-85619 2SC5849 2SC5700 HTT1127E Transistors smd mark code 15 S2127 HITACHI SMD TRANSISTORS

    2SC5872

    Abstract: 2SC5849 HTT1129E
    Text: HTT1129E Silicon NPN Epitaxial Twin Transistor ADE-208-1541A Z Rev.1 Jan. 2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5849


    Original     		PDF HTT1129E ADE-208-1541A 2SC5849 2SC5872 D-85622 D-85619 2SC5872 2SC5849 HTT1129E

    HN7G02FE

    Abstract: RN2110 SSM3K03FE
    Text: HN7G02FE TOSHIBA Multichip Discrete Device HN7G02FE Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2110 equivalent Q2 (MOSFET): SSM3K03FE equivalent


    Original     		PDF HN7G02FE RN2110 SSM3K03FE HN7G02FE

    ADE-208-1439A

    Abstract: 2SC5700 2SC5757 HTT1115E DSA003640 hitachi ic
    Text: HTT1115E Silicon NPN Epitaxial Twin Transistor ADE-208-1439A Z Rev.1 Aug. 2001 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5700


    Original     		PDF HTT1115E ADE-208-1439A 2SC5700 2SC5757 D-85622 D-85619 ADE-208-1439A 2SC5700 2SC5757 HTT1115E DSA003640 hitachi ic

    smd transistor marking SL6

    Abstract: SMD MARKING CODE hitachi SMD MARKING CODE sg 6533 SMD smd diode marking sG TRANSISTOR HK SMD hitachi transistor marking sg smd code SMD code E2 2SC5700
    Text: HTT1213E Silicon NPN Epitaxial Twin Transistor ADE-208-1449 Z Preliminary Rev. 0 Aug. 2001 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer Transistor Q2: Equivalent OSC Transistor


    Original     		PDF HTT1213E ADE-208-1449 2SC5700 D-85622 D-85619 smd transistor marking SL6 SMD MARKING CODE hitachi SMD MARKING CODE sg 6533 SMD smd diode marking sG TRANSISTOR HK SMD hitachi transistor marking sg smd code SMD code E2 2SC5700

    HN7G09FE

    Abstract: RN1104F SSM3K15FS
    Text: HN7G09FE TOSHIBA Multichip Discrete Device HN7G09FE Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN1104F equivalent Q2 (MOSFET): SSM3K15FS equivalent


    Original     		PDF HN7G09FE RN1104F SSM3K15FS HN7G09FE

    Power MOSFET, toshiba

    Abstract: 2SK1830 HN7G05FU RN2301 Power MOSFET, P, toshiba HIGH POWER MOSFET TOSHIBA
    Text: HN7G05FU TOSHIBA Multichip Discrete Device HN7G05FU Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2301 equivalent Q2 (MOSFET): 2SK1830 equivalent


    Original     		PDF HN7G05FU RN2301 2SK1830 Power MOSFET, toshiba HN7G05FU Power MOSFET, P, toshiba HIGH POWER MOSFET TOSHIBA

    HN7G02FE

    Abstract: RN2110 SSM3K03FE On semiconductor power MOSFET reliability report
    Text: HN7G02FE TOSHIBA Multichip Discrete Device HN7G02FE Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2110 equivalent Q2 (MOSFET): SSM3K03FE equivalent


    Original     		PDF HN7G02FE RN2110 SSM3K03FE HN7G02FE On semiconductor power MOSFET reliability report

    Untitled

    Abstract: No abstract text available
    Text: HN7G02FE TOSHIBA Multichip Discrete Device HN7G02FE Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2110 equivalent Q2 (MOSFET): SSM3K03FE equivalent


    Original     		PDF HN7G02FE RN2110 SSM3K03FE