transistor 2n5551
Abstract: 2N5551-NPN 2N5551
Text: 2N5551 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEO= 160V • Collector Dissipation: PC max =625mW TO-92 ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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2N5551
625mW
Width300s,
transistor 2n5551
2N5551-NPN
2N5551
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PDF
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2N5088 equivalent
Abstract: 2n5088 transistor transistor 2N5210 2N5210 2N5088
Text: 2N5210 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 50V • Collector Dissipation: PC max =625mW ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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2N5210
625mW
2N5088
100MHz
Width300s,
2N5088 equivalent
2n5088 transistor
transistor 2N5210
2N5210
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TRANSISTOR 2n5401
Abstract: 2N5401
Text: 2N5401 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC max =625mW ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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2N5401
625mW
Width300s,
-120V,
-10mA,
-50mA,
TRANSISTOR 2n5401
2N5401
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transistor 5401
Abstract: 2N5401NLBU 2N5401 fairchild 5401 transistor transistor 2N 5401 2N5401BU Transistor B C 458 2n5401 application
Text: 2N5401 2N5401 Amplifier Transistor • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC max =625mW • Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor
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Original
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2N5401
625mW
2N5401
O-92-3
2N5401BU
2N5401CTA
2N5401NLBU
2N5401TA
2N5401TAR
transistor 5401
2N5401 fairchild
5401 transistor
transistor 2N 5401
Transistor B C 458
2n5401 application
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PDF
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Untitled
Abstract: No abstract text available
Text: KSP8097 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEO=25V • Collector Dissipation: PC max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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Original
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KSP8097
625mW
2N5088
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PDF
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2N6515
Abstract: 2N6517
Text: 2N6517 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: VCEO=350V • Collector Dissipation: PC max =625mW TO-92 ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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Original
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2N6517
625mW
2N6515
100mA,
Width300s,
2N6517
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PDF
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Untitled
Abstract: No abstract text available
Text: KST5551 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR SOT-23 • Collector-Emitter Voltage: VCEO=160V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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Original
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KST5551
625mW
OT-23
2N5551
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PDF
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transistor 2n5550
Abstract: 2N5550 2N5551
Text: 2N5550 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 140V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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Original
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2N5550
625mW
2N5551
transistor 2n5550
2N5550
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PDF
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2N6515
Abstract: No abstract text available
Text: 2N6515 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: VCEO= 250V • Collector Dissipation: PC max =625mW TO-92 ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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Original
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2N6515
625mW
100mA,
Width300s,
2N6515
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PDF
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2N5401 fairchild
Abstract: transistor 2N5401 2N5401 2n5401 transistor
Text: 2N5401 2N5401 Amplifier Transistor • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC max =625mW • Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor
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Original
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2N5401
625mW
2N5401 fairchild
transistor 2N5401
2N5401
2n5401 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N6516 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO=300V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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Original
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2N6516
625mW
2N6515
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N6517 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: VCEO=350V • Collector Dissipation: PC max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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2N6517
625mW
2N6515
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PDF
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KST3906
Abstract: KST3906 samsung vce 1v
Text: KST3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 Î ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
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KST3906
OT-23
Out00¶
-10mA
-50mA
-100mA
-10mA,
-50mA,
KST3906
KST3906 samsung
vce 1v
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PDF
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KSP2907a TRANSISTOR PNP
Abstract: transistor PN2907 "General Purpose Transistor" transistor ksp2907a KSP2907A PN2907
Text: KSP2907A KSP2907A General Purpose Transistor • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC max =625mW • Suffix “-C” means Center Collector (1.Emitter 2.Collector 3.Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor
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KSP2907A
625mW
KSP2907a TRANSISTOR PNP
transistor PN2907
"General Purpose Transistor"
transistor ksp2907a
KSP2907A
PN2907
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PDF
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100khz 5v transistor npn
Abstract: No abstract text available
Text: 2N5088 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V Ceo =30V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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OCR Scan
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2N5088
625mW
100pA,
100khz 5v transistor npn
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PDF
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ksp5172
Abstract: No abstract text available
Text: KSP5172 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: Vce t “25V • Collector Dissipation: Pc (max *625mW ABSOLUTE MAXIMUM RATINGS (TA=25t:) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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OCR Scan
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KSP5172
625mW
Vcb-25V,
lc-10mA,
ksp5172
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PDF
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR KST4401 SWITCHING TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Rating Symbol
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OCR Scan
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KST4401
150mA,
150mA
7Tb4142
Q025122
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N5210 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V Ce o = 5 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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OCR Scan
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2N5210
625mW
2N5088
100/iA,
100KHZ
20/iA
22KSJ
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PDF
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2n5088 transistor
Abstract: transistor 473 100khz 5v transistor 2N5088 2N5210
Text: NPN EPITAXIAL SILICON TRANSISTOR 2N5210 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V Ce o = 5 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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OCR Scan
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2N5210
625mW
2N5088
100KHZ
20MHz
20fiA
10Kfi
2n5088 transistor
transistor 473
100khz 5v transistor
2N5210
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PDF
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KST3904
Abstract: KST4124
Text: KST4124 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Symbol
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OCR Scan
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KST4124
KST3904
OT-23
100MHz
100fiA,
7Tb4142
KST4124
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PDF
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kst2907
Abstract: No abstract text available
Text: KST2907 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA»25t: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
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OCR Scan
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KST2907
OT-23
-10mA,
Un-15mA
-500mA,
-50mA
-50mA,
100MHz
-150mA
-15mA
kst2907
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PDF
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Untitled
Abstract: No abstract text available
Text: BCX71K PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
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OCR Scan
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BCX71K
OT-23
BT5086
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PDF
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Untitled
Abstract: No abstract text available
Text: BCX70H NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
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OCR Scan
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BCX70H
OT-23
MMBT3904
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PDF
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Untitled
Abstract: No abstract text available
Text: BCX70K NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Symbol
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OCR Scan
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BCX70K
MMBT3904
100MHz
QQ2S064
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PDF
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