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    TRANSISTOR EMITTER COLLECTOR CAPACITANCE Search Results

    TRANSISTOR EMITTER COLLECTOR CAPACITANCE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR EMITTER COLLECTOR CAPACITANCE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 2n5551

    Abstract: 2N5551-NPN 2N5551
    Text: 2N5551 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEO= 160V • Collector Dissipation: PC max =625mW TO-92 ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    Original     		PDF 2N5551 625mW Width300s, transistor 2n5551 2N5551-NPN 2N5551

    2N5088 equivalent

    Abstract: 2n5088 transistor transistor 2N5210 2N5210 2N5088
    Text: 2N5210 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 50V • Collector Dissipation: PC max =625mW ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    Original     		PDF 2N5210 625mW 2N5088 100MHz Width300s, 2N5088 equivalent 2n5088 transistor transistor 2N5210 2N5210

    TRANSISTOR 2n5401

    Abstract: 2N5401
    Text: 2N5401 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC max =625mW ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    Original     		PDF 2N5401 625mW Width300s, -120V, -10mA, -50mA, TRANSISTOR 2n5401 2N5401

    transistor 5401

    Abstract: 2N5401NLBU 2N5401 fairchild 5401 transistor transistor 2N 5401 2N5401BU Transistor B C 458 2n5401 application
    Text: 2N5401 2N5401 Amplifier Transistor • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC max =625mW • Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor


    Original     		PDF 2N5401 625mW 2N5401 O-92-3 2N5401BU 2N5401CTA 2N5401NLBU 2N5401TA 2N5401TAR transistor 5401 2N5401 fairchild 5401 transistor transistor 2N 5401 Transistor B C 458 2n5401 application

    Untitled

    Abstract: No abstract text available
    Text: KSP8097 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEO=25V • Collector Dissipation: PC max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    Original     		PDF KSP8097 625mW 2N5088

    2N6515

    Abstract: 2N6517
    Text: 2N6517 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: VCEO=350V • Collector Dissipation: PC max =625mW TO-92 ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    Original     		PDF 2N6517 625mW 2N6515 100mA, Width300s, 2N6517

    Untitled

    Abstract: No abstract text available
    Text: KST5551 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR SOT-23 • Collector-Emitter Voltage: VCEO=160V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    Original     		PDF KST5551 625mW OT-23 2N5551

    transistor 2n5550

    Abstract: 2N5550 2N5551
    Text: 2N5550 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 140V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    Original     		PDF 2N5550 625mW 2N5551 transistor 2n5550 2N5550

    2N6515

    Abstract: No abstract text available
    Text: 2N6515 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: VCEO= 250V • Collector Dissipation: PC max =625mW TO-92 ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    Original     		PDF 2N6515 625mW 100mA, Width300s, 2N6515

    2N5401 fairchild

    Abstract: transistor 2N5401 2N5401 2n5401 transistor
    Text: 2N5401 2N5401 Amplifier Transistor • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC max =625mW • Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor


    Original     		PDF 2N5401 625mW 2N5401 fairchild transistor 2N5401 2N5401 2n5401 transistor

    Untitled

    Abstract: No abstract text available
    Text: 2N6516 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO=300V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    Original     		PDF 2N6516 625mW 2N6515

    Untitled

    Abstract: No abstract text available
    Text: 2N6517 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: VCEO=350V • Collector Dissipation: PC max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    Original     		PDF 2N6517 625mW 2N6515

    KST3906

    Abstract: KST3906 samsung vce 1v
    Text: KST3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 Î ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


    Original     		PDF KST3906 OT-23 Out00¶ -10mA -50mA -100mA -10mA, -50mA, KST3906 KST3906 samsung vce 1v

    KSP2907a TRANSISTOR PNP

    Abstract: transistor PN2907 "General Purpose Transistor" transistor ksp2907a KSP2907A PN2907
    Text: KSP2907A KSP2907A General Purpose Transistor • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC max =625mW • Suffix “-C” means Center Collector (1.Emitter 2.Collector 3.Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor


    Original     		PDF KSP2907A 625mW KSP2907a TRANSISTOR PNP transistor PN2907 "General Purpose Transistor" transistor ksp2907a KSP2907A PN2907

    100khz 5v transistor npn

    Abstract: No abstract text available
    Text: 2N5088 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V Ceo =30V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF 2N5088 625mW 100pA, 100khz 5v transistor npn

    ksp5172

    Abstract: No abstract text available
    Text: KSP5172 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: Vce t “25V • Collector Dissipation: Pc (max *625mW ABSOLUTE MAXIMUM RATINGS (TA=25t:) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF KSP5172 625mW Vcb-25V, lc-10mA, ksp5172

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST4401 SWITCHING TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Rating Symbol


    OCR Scan     		PDF KST4401 150mA, 150mA 7Tb4142 Q025122

    Untitled

    Abstract: No abstract text available
    Text: 2N5210 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V Ce o = 5 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF 2N5210 625mW 2N5088 100/iA, 100KHZ 20/iA 22KSJ

    2n5088 transistor

    Abstract: transistor 473 100khz 5v transistor 2N5088 2N5210
    Text: NPN EPITAXIAL SILICON TRANSISTOR 2N5210 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V Ce o = 5 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF 2N5210 625mW 2N5088 100KHZ 20MHz 20fiA 10Kfi 2n5088 transistor transistor 473 100khz 5v transistor 2N5210

    KST3904

    Abstract: KST4124
    Text: KST4124 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Symbol


    OCR Scan     		PDF KST4124 KST3904 OT-23 100MHz 100fiA, 7Tb4142 KST4124

    kst2907

    Abstract: No abstract text available
    Text: KST2907 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA»25t: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


    OCR Scan     		PDF KST2907 OT-23 -10mA, Un-15mA -500mA, -50mA -50mA, 100MHz -150mA -15mA kst2907

    Untitled

    Abstract: No abstract text available
    Text: BCX71K PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


    OCR Scan     		PDF BCX71K OT-23 BT5086

    Untitled

    Abstract: No abstract text available
    Text: BCX70H NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


    OCR Scan     		PDF BCX70H OT-23 MMBT3904

    Untitled

    Abstract: No abstract text available
    Text: BCX70K NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Symbol


    OCR Scan     		PDF BCX70K MMBT3904 100MHz QQ2S064