transistor 13003d
Abstract: 13003D 13003a 13003a TRANSISTOR 13003F 13003C transistor 13003F 13003c TRANSISTOR 13003E S W 13003a
Text: ELECTRONIC 13003 HIGH VOLTAGE POWER TRANSISTOR FEATURES: High Voltage Capability High Speed Switching Wide SOA APPLICATIONS: Flourscent Lamp Electronic Ballast Electronic Transformer LIMMITING VALUES Tj=25℃ Unless OtherWise Stated Parameter Symbol Value
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Jul-09
13003F
transistor 13003d
13003D
13003a
13003a TRANSISTOR
13003F
13003C
transistor 13003F
13003c TRANSISTOR
13003E
S W 13003a
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D4124PL
Abstract: Jilin Sino-Microelectronics 110V AC to 5V DC ic 3DD41 3DD4124PL 3dd4124 D412
Text: Fast-Switching NPN Bipolar Transistor R D4124PL Characteristics ◆Middle Breakdown Voltage ◆High Current Capability ◆High Switching Speed ◆High Ruggedness Applications 110V AC ◆ Electronic Ballasts For Fluorescent Lighting ◆ Electronic Transformers
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D4124PL
3DD4124PL
25TO-92
O-126)
Tel864324678411
D4124PL
Jilin Sino-Microelectronics
110V AC to 5V DC ic
3DD41
3dd4124
D412
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BUT211
Abstract: BUT21
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications.
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BUT211
O220AB
O220AB
BUT211
BUT21
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BUT211
Abstract: BUT21
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications.
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BUT211
O220AB
O220AB
BUT211
BUT21
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BU1706AX
Abstract: BUT211X
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211X GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in a plastic full-pack envelope specially suited for high frequency electronic lighting ballast applications.
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BUT211X
OT186A
BU1706AX
BUT211X
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BDY90P
Abstract: No abstract text available
Text: BDY90P NPN SILICON POWER TRANSISTOR • ■ ■ NPN TRANSISTOR LOW COLLECTOR EMITTER SATURATION VOLTAGE FAST-SWITCHING SPEED APPLICATION GENERAL PURPOSE SWITCHING APPLICATIONS ■ GENERAL PURPOSE AMPLIFIERS ■ DC CURRENT AND BATTERY OPERATED ELECTRONIC BALLAST
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BDY90P
BDY90P
O-220
O-220
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BUT211X
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUT211X GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in a plastic full-pack envelope specially suited for high frequency electronic lighting ballast applications.
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BUT211X
OT186A
BUT211X
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ELECTRONIC BALLAST 12v
Abstract: FJP5304D TRANSISTOR hFE-100
Text: FJP5304D NPN Silicon Transistor High Voltage High Speed Power Switch Application • • • • Wide Safe Operating Area Built-in Free Wheeling diodeSuitable for Electronic Ballast Application Suitable for Electronic Ballast Application Small Variance in Storage Time
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FJP5304D
O-220
FJP5304D
ELECTRONIC BALLAST 12v
TRANSISTOR hFE-100
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BU1706A
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706A GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in high frequency electronic lighting ballast applications.
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BU1706A
BU1706A
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BDY90P
Abstract: No abstract text available
Text: BDY90P NPN SILICON POWER TRANSISTOR • ■ ■ NPN TRANSISTOR LOW COLLECTOR EMITTER SATURATION VOLTAGE FAST-SWITCHING SPEED APPLICATION ■ GENERAL PURPOSE SWITCHING APPLICATIONS ■ GENERAL PURPOSE AMPLIFIERS ■ DC CURRENT AND BATTERY OPERATED ELECTRONIC BALLAST
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BDY90P
BDY90P
O-220
O-220
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BUL128D
Abstract: 700 v power transistor
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors BUL128D TRANSISTOR NPN TO-220 FEATURES z ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING z FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER 1.BASE CONVERTERS 2.COLLECTOR
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O-220
BUL128D
O-220
BUL128D
700 v power transistor
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BU1706A
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706A GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in high frequency electronic lighting ballast applications.
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BU1706A
BU1706A
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BU1706AB
Abstract: BU1706A
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AB GENERAL DESCRIPTION High-voltage, high-speed switching npn transistor in a plastic envelope suitable for surface mounting, intended for use in high frequency electronic lighting ballast applications.
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BU1706AB
BU1706AB
BU1706A
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors BUL128D TRANSISTOR NPN TO-220 FEATURES z ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING z FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER 1.BASE CONVERTERS 2.COLLECTOR
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O-220
BUL128D
O-220
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wk 2 e transistor
Abstract: transistor BU 705 BUT21
Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in T0220AB envelope specially suited for high frequency electronic lighting ballast applications.
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BUT211
T0220AB
T0220AB1
wk 2 e transistor
transistor BU 705
BUT21
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BUT21
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in T0220AB envelope specially suited for high frequency electronic lighting ballast applications.
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BUT211
T0220AB
BUT21
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ST25C
Abstract: st 25 c transistor electronic ballast for T12 but54 BVW32 transistor a09 transistor 800V 1A Scans-0014927 A08A 14TI
Text: TELEFUNKEN ELECTRONIC 17E D • 6 ti S 0 0 cib OOORSEi BUT 54 T m O J I P W K iiiS electronic Cwbv*ttchnotog« Silicon NPN Power Transistor r - 3 5 - is Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique
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00DRS51
flBES100
VB-12SV
ST25C
st 25 c
transistor electronic ballast for T12
but54
BVW32
transistor a09
transistor 800V 1A
Scans-0014927
A08A
14TI
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BUX100
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon diffused power transistor BUX100 GENERAL DESCRIPTION High voltage, high speed glass passivated npn power transistor in a SOT82 envelope intended for use in high frequency electronic lighting ballast applications.
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BUX100
711DfiÂ
711005b
BUX100
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon diffused power transistor BUX100 GENERAL DESCRIPTION High voltage, high speed glass passivated npn power transistor in a SOT82 envelope intended for use in high frequency electronic lighting ballast applications.
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BUX100
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BUX100
Abstract: transistor ""
Text: Philips Semiconductors Product specification Silicon diffused power transistor BUX100 GENERAL DESCRIPTION High voltage, high speed glass passivated npn power transistor in a SOT82 envelope intended for use in high frequency electronic lighting ballast applications.
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BUX100
100mA
7110flBb
DD77647
DD776M6
BUX100
transistor ""
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transistor BC 245
Abstract: transistor BC 245 c ST25C transistor bc 138 FC4A TRANSISTOR BC 137 but54 TELEFUNKEN 12A3 T0126
Text: TELEFUNKEN ELECTRONIC 17E D • 6 ti S 0 0 cib OOORSEi BUT 54 T m O JIP W K iiiS electronic Cwbv*ttchnotog« Silicon NPN Power Transistor r - 3 5 - is Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique • Short switching time
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00DRS51
flBES100
T0126
15A3DIN
transistor BC 245
transistor BC 245 c
ST25C
transistor bc 138
FC4A
TRANSISTOR BC 137
but54
TELEFUNKEN
12A3
T0126
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706A GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in high frequency electronic lighting ballast applications.
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OCR Scan
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BU1706A
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706A GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in high frequency electronic lighting ballast applications.
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OCR Scan
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BU1706A
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LB 124 transistor
Abstract: LB 122 transistor
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AB GENERAL DESCRIPTION High-voltage, high-speed switching npn transistor in a plastic envelope suitable for surface mounting, intended for use in high frequency electronic lighting ballast applications.
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BU1706AB
LB 124 transistor
LB 122 transistor
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