Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR EH 11 Search Results

    TRANSISTOR EH 11 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR EH 11 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ic 556

    Abstract: transistor SMD bcw66h BCW66F BCW66G BCW66H for ic 556 marking cd 556 SMD TRANSISTOR MARKING bw
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLINE DETAILS


    Original     		PDF OT-23 BCW66F, BCW66G BCW66H C-120 ic 556 transistor SMD bcw66h BCW66F BCW66G BCW66H for ic 556 marking cd 556 SMD TRANSISTOR MARKING bw

    BCW66FR

    Abstract: BCW66HR vce 1v BCW66 BCW66F BCW66G BCW66GR BCW66H BCW68
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - MARCH 2001 PARTMARKING DETAILS – BCW66F – EF BCW66G – EG BCW66H – EH BCW66FR – BCW66GR – BCW66HR – BCW66 7P 5T 7M E C B COMPLEMENTARY TYPE – BCW68 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER


    Original     		PDF BCW66F BCW66G BCW66H BCW66FR BCW66GR BCW66HR BCW66 BCW68 100mA, BCW66FR BCW66HR vce 1v BCW66 BCW66F BCW66G BCW66GR BCW66H BCW68

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N–P–N transisto r Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLINE DETAILS


    Original     		PDF OT-23 BCW66F, BCW66G BCW66H C-120

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - MARCH 2001 PARTMARKING DETAILS – BCW66F – EF BCW66G – EG BCW66H – EH BCW66FR – BCW66GR – BCW66HR – BCW66 7P 5T 7M E C B COMPLEMENTARY TYPE – BCW68 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER


    Original     		PDF BCW66F BCW66G BCW66H BCW66FR BCW66GR BCW66HR BCW66 BCW68 100mA, 500mA,

    bcw66fr

    Abstract: No abstract text available
    Text: Not Recommended for New Design Please Use BCW66H SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - MARCH 2001 PARTMARKING DETAILS – BCW66F – EF BCW66G – EG BCW66H – EH BCW66FR – BCW66GR – BCW66HR – BCW66 7P 5T 7M E C B COMPLEMENTARY TYPE – BCW68


    Original     		PDF BCW66H BCW66F BCW66G BCW66FR BCW66GR BCW66HR BCW66 BCW68 bcw66fr

    CPM2C

    Abstract: CPM2C-24EDT 200T1 CPM2C-CIF01-V1 A106 Micro Capacitor CPM2c-32EDT 3G3HV manual CQM1-CIF11 inverter omron 3G3HV transistor pnp a110
    Text: Micro Programmable Controller CPM2C Omron’s powerful CPM2C micro controller redefines the traditional micro PLC. The CPM2C’s 33 mm width allows it to fit into small spaces, offers 119 instructions, and has processing speeds rivaling many ‘small’ PLCs.


    Original     		PDF RS-232C/Peripheral R301-E3-01 CPM2C CPM2C-24EDT 200T1 CPM2C-CIF01-V1 A106 Micro Capacitor CPM2c-32EDT 3G3HV manual CQM1-CIF11 inverter omron 3G3HV transistor pnp a110

    Untitled

    Abstract: No abstract text available
    Text: Bulletin No. CM-F Drawing No. LP0100 Released 11/02 Tel +1 717 767-6511 Fax +1 (717) 764-0839 www.redlion-controls.com CONVERTER MODULES ADAPTS MANY RED LION CONTROLS’ COUNTERS AND ACCESSORIES TO A WIDE RANGE OF SIGNAL SOURCES VCM - VOLTAGE CONVERTER MODULES


    Original     		PDF LP0100

    Untitled

    Abstract: No abstract text available
    Text: RN 5 RF SERI ES LOW RIPPLE VOLTAGE REGULATOR WITH EXTERNAL TRANSISTOR NO. EA-043-111116 OUTLINE The RN5RF Series are CMOS-based voltage regulator ICs which control external driver transistors with high ripple rejection, high accuracy output voltage, low supply current. Each of these voltage regulator ICs consists of


    Original     		PDF EA-043-111116 Room403, Room109, 10F-1,

    Untitled

    Abstract: No abstract text available
    Text: RN5RF SERIES LOW RIPPLE VOLTAGE REGULATOR WITH EXTERNAL TRANSISTOR NO. EA-043-111116 OUTLINE The RN5RF Series are CMOS-based voltage regulator ICs which control external driver transistors with high ripple rejection, high accuracy output voltage, low supply current. Each of these voltage regulator ICs consists of


    Original     		PDF EA-043-111116 Room403, Room109,

    TDA3654

    Abstract: TDA3654Q TDA3654 equivalent TDA2579 vertical deflection and guard circuit metal detector coils
    Text: INTEGRATED CIRCUITS DATA SHEET TDA3654 TDA3654Q Vertical deflection and guard circuit 110˚ Product specification File under Integrated Circuits, IC02 March 1991 Philips Semiconductors Product specification Vertical deflection and guard circuit (110˚) TDA3654


    Original     		PDF TDA3654 TDA3654Q TDA3654 TDA3654Q TDA3654 equivalent TDA2579 vertical deflection and guard circuit metal detector coils

    Untitled

    Abstract: No abstract text available
    Text: BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N-P-N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.48 0.38 0.14 3 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR 1- ° 2_ "


    OCR Scan     		PDF BCW66F, BCW66G BCW66H BCW66F

    Untitled

    Abstract: No abstract text available
    Text: L BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N -P -N transistor M arking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLIN E DETAILS A LL DIM ENSIONS IN m m _3.0 2 .8" 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 • COLLECTOR


    OCR Scan     		PDF BCW66F, BCW66G BCW66H 180put

    BCW66H

    Abstract: BCW66F BCW66G
    Text: 23033=14 0ÜQ0 7b5 Ô71 BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N -P -N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAG E O UTLIN E D ETA ILS ALL D IM EN SIO N S IN m m _3.0 2.8 0.14 0.09 0.48 0.38 Pin configuration _L § 3 0.70 0.50


    OCR Scan     		PDF Q07b5 BCW66F, BCW66G BCW66H BCW66F E3833C1M 00007b3 BCW66H

    Untitled

    Abstract: No abstract text available
    Text: 23333=14 000G7b5 Ô71 BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N -P -N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAG E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m J3.0 2.8 0.14 0.09 0.48 0.38 3 L 0.70 0.50 § 2.6 Pin configuration


    OCR Scan     		PDF 000G7b5 BCW66F, BCW66G BCW66H 00007L

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4527 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE <;r d i M T * j V 7 « Unit in mm TV TUNER, UHF OSCILLATOR APPLICATIONS. COMMON BASE TV TUNER, UHF CONVERTER APPLICATIONS. (COMMON BASE) • Transition Freauencv is Hi eh and Dependent. on Current


    OCR Scan     		PDF 2SC4527 2SC4246.

    max7575

    Abstract: BCW66F BCW66G BCW66H
    Text: BCW66F, BCW66G BCW66H COIL GENERAL PURPOSE TRANSISTOR N -P -N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PA C K A G E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m J3.0 2 .8 * 0.14 0.48 0.38 3 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER


    OCR Scan     		PDF BCW66F, BCW66G BCW66H BCW66F max7575 BCW66F BCW66H

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR FC112 CORP SEE D 7 eH 7 0 7 b 0 0 0 7 3 0 2 1 T -3 S -II # N P N Epitaxial Planar S ilico n C o m p o site Transistor 2066 Switching Applications 3080 with Bias Resistances R1=22kQ, R2=22kO F ea tu res On-chip bias resistors (Ri = 22kQ,R2= 22kfl)


    OCR Scan     		PDF FC112 22kfl) FC112 2SC3396, 4139MO

    BA6125

    Abstract: ba612
    Text: BA612 BA612 5 eh ^ 5-Channel Large-Current Driver B A 612«, * f ; l F 7 ' f A l C f 1 X M & f k t i Z $ - ' > h > h 7 > y ^ 5 ' 7 H ' 5 HISS A U T ' f 0 D IP 1 4 p in T A T t 'if o The BA612 is a monolithic IC consisting of an array of 5 Darlington configured transistor pairs which have built-in


    OCR Scan     		PDF BA612 BA612 14-pin 400mA) BA6125

    ku 606

    Abstract: KT808AM transistor d 808 transistor kt transistor 805A 2110-B1 KT 805 RFT Transistoren KT808 2107B-2
    Text: SERVICE-M ITTEILUNGEN VEB IN D U S T R IE V E R T R IE 8 R U N D F U N K U N D F E R N S EH EN ra d io -television AUSGABE: SEITE 1-4 DATUM: 3.84 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / SI E I H B A U A N L E I T Ü H G für den äquivalenten ?DE-Steckbaustein mit Transistor, der die Rohre 6 Sch 5 P in den Sü-Paxbfernseh^eraten RADUGA 726/730 ersetzt«


    OCR Scan     		PDF 05A-K KT808 ku 606 KT808AM transistor d 808 transistor kt transistor 805A 2110-B1 KT 805 RFT Transistoren 2107B-2

    MG120V2YS40

    Abstract: No abstract text available
    Text: TO SHIBA MG120V2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG120V2YS40 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS 4-FAST-ON-TAB #110 • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete H alf Bridge in One


    OCR Scan     		PDF MG120V2YS40 120V2YS40 2-94C1A MG120V2YS40

    MG90V2YS40

    Abstract: No abstract text available
    Text: TO SHIBA MG90V2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG90V2YS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • 4-FAST-ON-TAB #110 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One


    OCR Scan     		PDF MG90V2YS40 2-94C1A MG90V2YS40

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE9602, NTE96L02, 16-Lead DI P, See Diag. 249 NTE96LS02, NTE96S02 Dual Retriggerable/Resettable Monostable Multivibrator cx 1 Q FIX 1 Q CD 1 Q 11EÉ log Q v cc 0 CX2 Q RX2 Q CD 2 Q1 Q g 11 g io a i n


    OCR Scan     		PDF NTE9602, NTE96L02, 16-Lead NTE96LS02, NTE96S02 43125l

    KRA221S

    Abstract: KRA222S KRA223S KRA224S KRA225S KRA226S
    Text: SEMICONDUCTOR TECHNICAL DATA KRA221SKRA226S EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • • • • With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process.


    OCR Scan     		PDF kra221s- kra226s -800mA. KRA221S KRA222S KRA223S KRA224S KRA225S KRA226S

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 Unit in mm RF PO W ER MOSFET FOR VHF- AND UHF-BAND PO W ER AM PLIFIER • • • Output Power Power Gain Drain Efficiency P0 =7.5W GP ^11.7dB 7D^50% M A X IM U M RATINGS Ta = 25°C


    OCR Scan     		PDF 2SK3075 961001EAA1 2200pF