TRANSISTOR E2955T Search Results

TRANSISTOR E2955T Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR E2955T Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
E3055T Abstract: E2955T e3055 E2955T-MJ E2955T-MJE3055T e2955 Text: r z T SGS-THOMSON Ä 7 # RSD lS S l[LliSTl^©iBOi MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec T0-220 package. It is intended for power switching circuits and	OCR Scan	MJE2955T MJE3055T MJE3055T T0-220 MJE2955T. E3055T E2955T e3055 E2955T-MJ E2955T-MJE3055T e2955	PDF
TRANSISTOR tip122 CHN 949 Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175 Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.	OCR Scan	38v01 TRANSISTOR tip122 CHN 949 E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

E3055T

Abstract: E2955T e3055 E2955T-MJ E2955T-MJE3055T e2955
Text: r z T SGS-THOMSON Ä 7 # RSD lS S l[LliSTl^©iBOi MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec T0-220 package. It is intended for power switching circuits and

OCR Scan

MJE2955T MJE3055T MJE3055T T0-220 MJE2955T. E3055T E2955T e3055 E2955T-MJ E2955T-MJE3055T e2955

PDF

TRANSISTOR tip122 CHN 949

Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.