Untitled
Abstract: No abstract text available
Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor
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LM96163
LM96163
2N3904,
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Untitled
Abstract: No abstract text available
Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor
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LM96163
2N3904,
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2N3904
Abstract: LM96163 LM96163C LM96163CISD LM96163CISDX QFN10 RLs6
Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor
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Original
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LM96163
LM96163
2N3904,
2N3904
LM96163C
LM96163CISD
LM96163CISDX
QFN10
RLs6
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PDF
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RTU620
Abstract: No abstract text available
Text: LM96163 LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology Literature Number: SNAS433C LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm® BJT Transistor Beta
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LM96163
LM96163
SNAS433C
RTU620
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Untitled
Abstract: No abstract text available
Text: BFR750L3RH NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications up to 10 GHz 3 1 2 • Ideal for WLAN and all 5-6 GHz applications • High OIP3 and P-1dB for driver stages
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BFR750L3RH
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BFR750L3RH
Abstract: spice germanium diode BFR705L3RH
Text: BFR750L3RH NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range 3 1 of wireless applications up to 10 GHz 2 • Ideal for WLAN and all 5-6 GHz applications • High OIP 3 and P-1dB for driver stages
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BFR750L3RH
BFR750L3RH
spice germanium diode
BFR705L3RH
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Untitled
Abstract: No abstract text available
Text: BC846A/B, BC847A/B/C, BC848A/B/C 250mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E Epitaxial planar die construction Surface device type mounting C Moisture sensitivity level 1 D Matte Tin Sn lead finish with Nickel(Ni) underplate
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BC846A/B,
BC847A/B/C,
BC848A/B/C
250mW,
OT-23
MIL-STD-202,
MGT724
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PDF
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transistor marking code SOT-23
Abstract: transistor packing code 3f TRANSISTOR 3F t SOT-23 marking 050 transistor transistor sot23 3F transistor MARKING CODE 16 transistor sot23 SOT-23 transistor code 3e transistor SOT23 br sot-23 MARKING 3l
Text: BC856A/B, BC857A/B/C, BC858A/B/C 250mW, PNP Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E Epitaxial planar die construction Surface device type mounting C Moisture sensitivity level 1 D Matte Tin Sn lead finish with Nickel(Ni) underplate
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BC856A/B,
BC857A/B/C,
BC858A/B/C
250mW,
OT-23
MIL-STD-202,
C/10s
008gram
transistor marking code SOT-23
transistor packing code 3f
TRANSISTOR 3F t
SOT-23 marking 050 transistor
transistor sot23
3F transistor
MARKING CODE 16 transistor sot23
SOT-23 transistor code 3e
transistor SOT23 br
sot-23 MARKING 3l
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Untitled
Abstract: No abstract text available
Text: BFR750L3RH NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range 3 1 of wireless applications up to 10 GHz 2 • Ideal for WLAN and all 5-6 GHz applications • High OIP 3 and P-1dB for driver stages
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BFR750L3RH
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TRANSISTOR 3F t
Abstract: BC857A SOT-23 transistor code 3e
Text: BC856A/B, BC857A/B/C, BC858A/B/C 250mW, PNP Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E Epitaxial planar die construction Surface device type mounting C Moisture sensitivity level 1 D Matte Tin Sn lead finish with Nickel(Ni) underplate
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Original
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BC856A/B,
BC857A/B/C,
BC858A/B/C
250mW,
OT-23
MIL-STD-202,
TRANSISTOR 3F t
BC857A
SOT-23 transistor code 3e
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PDF
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transistor 1f sot-23
Abstract: transistor marking code SOT-23 1B SOT-23 1k sot-23 NPN BC846B SOT23 BC846B BC847A 1a sot-23 BC847C BC848A
Text: BC846A/B, BC847A/B/C, BC848A/B/C 250mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E Epitaxial planar die construction Surface device type mounting C Moisture sensitivity level 1 D Matte Tin Sn lead finish with Nickel(Ni) underplate
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Original
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BC846A/B,
BC847A/B/C,
BC848A/B/C
250mW,
OT-23
MIL-STD-202,
MGT724
transistor 1f sot-23
transistor marking code SOT-23
1B SOT-23
1k sot-23
NPN BC846B SOT23
BC846B
BC847A
1a sot-23
BC847C
BC848A
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E110NA20
Abstract: Ultrasonic welding circuit diagram schematic diagram UPS Ultrasonic welding circuit schematic diagram UPS 600 Power free schematic diagram welding device SMPS SCHEMATIC DIAGRAM vdgr test circuit CIRCUIT DIAGRAM UPS ultrasonic welding
Text: STE110NA20 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST E110NA20 • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 200 V < 0.019 Ω 110 A TYPICAL RDS(on) = 0.015 Ω HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY
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STE110NA20
E110NA20
E110NA20
Ultrasonic welding circuit diagram
schematic diagram UPS
Ultrasonic welding circuit
schematic diagram UPS 600 Power free
schematic diagram welding device
SMPS SCHEMATIC DIAGRAM
vdgr test circuit
CIRCUIT DIAGRAM UPS
ultrasonic welding
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transistor TE 901 equivalent
Abstract: transistor TE 901 IGT6D11 IGT6E11
Text: IGT6D11,E11 Insulated Gate Bipolar Transistor 101 AMPERES 400, 500 VOLTS EQUIV. RdS ON = 0.27 Cl This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and
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IGT6D11
6D11-
transistor TE 901 equivalent
transistor TE 901
IGT6E11
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PDF
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K105 transistor
Abstract: transistor k105 IGT4E11 IGT4D11 IGT-4E11
Text: IGT4D11,E11 c s r 10 AMPERES 400, 500 VOLTS EQUIV. Rd S ON = 0.27 il Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and
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IGT4D11
K105 transistor
transistor k105
IGT4E11
IGT-4E11
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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Untitled
Abstract: No abstract text available
Text: fìjUeJc&gct - / PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current
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2SC5507
2SC5507
2SC5507-T2
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PDF
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equivalent transistor TT 3034
Abstract: transistor TT 3034 D718 transistor D718 equivalent transistor a769 TT 3034 transistor transistor d718 d718* transistor k d718 D718
Text: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: • Replaces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded (thru-hole) packages
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-335/H-135/D-40
-334/H-280/D-41
-334/H-280/D-41
-334/H-28Q/D-41
L-56SW-42/H-115
L-565/W-42/H-12
OT-23,
SC-59
equivalent transistor TT 3034
transistor TT 3034
D718 transistor
D718 equivalent
transistor a769
TT 3034 transistor
transistor d718
d718* transistor
k d718
D718
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PRW 200
Abstract: transistor VCE 1000V CMK2100 1bw transistor
Text: 7 ^ 3 < ? -3 / F F 100 R 10 K 52E EUPEC Transistor Transistor ]> • aM D SST? Thermische Eigenschaften Rthjc Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VCES Maximum rated values 1000 V 100 A 751 MUPEC Thermal properties DC, pro Baustein / per module
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34D32CI7
PRW 200
transistor VCE 1000V
CMK2100
1bw transistor
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PDF
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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PDF
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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FF15R10K
Abstract: No abstract text available
Text: 7 *39-3/ F F 15R 10K SSE EUPEC D Ü D D lf iE Thermische Eigenschaften Transistor Transistor 34032^7 i RthJC Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1000 V 15 A RthCK lc 54b «U PEC Thermal properties DC, pro Baustein/per module
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FF15R10K
34D32CI7
FF15R10K
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PDF
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1BW TRANSISTOR
Abstract: transistor 79t
Text: 7 - 3 9 - 3 / F 300 R 10 K SSE EUPEC » • 34032^7 Q 000252 7TT «U PEC Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 1000 V 300 A 600 A 2000 W V ge 20 V Inversdiode Inverse dlode
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Q000252
34D32CI7
1BW TRANSISTOR
transistor 79t
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PDF
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J5417AKK
Abstract: MALLORY 150 CAPACITORS Rogers 6010.5 ATC100A PH1819-45A transistor 41 j5417
Text: PH1819-45A M/A-OOM Wireless Power Transistor 45 Watts, 1805- 1880 MHz /MOCOVI M RF & Microwave Products Outline Drawing1 Description M/A-COM’s PH11819-45A is a high efficiency silicon bipo lar NPN transistor intended for use as a common emitter class AB stage in power amplifiers that operate in the 1805
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PH1819-45A
PH11819-45A
PH1819-45A
J5417AKK
TT50M50A
ATC100A
MALLORY 150 CAPACITORS
Rogers 6010.5
transistor 41
j5417
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