0015923C
Abstract: 2N6547 sc08820
Text: 2N6547 High voltage fast-switching NPN power transistor Datasheet - production data Features • • • • NPN transistor High voltage capability High current capability Fast switching speed Applications 1 • • 2 TO-3 Switched mode power supplies Flyback and forward single transistor low
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2N6547
2N6547
SC08820
DocID8252
0015923C
sc08820
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V23990-P569F
Abstract: V23990-P569 tyco igbt module tyco igbt 1200V P569 V23990-P560-F
Text: V23990-P56X-F target datasheets Maximum Ratings / Höchstzulässige Werte version 0404 Module type Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current Condition VCE
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V23990-P56X-F
thickness50um
Dicke50um
D-81359
V23990-P569F
V23990-P569
tyco igbt module
tyco igbt 1200V
P569
V23990-P560-F
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NPN EBC SOT-23
Abstract: SOT-23 EBC NPN transistor ECB TO-92
Text: Power Transistor & Small Signal Transistor Power Transistor & Small Signal Transistor MAXIMUM RATINGS NPN BVCEO BVCES IC PC PIN STYLE PNP BVCBO BVCES BVCEV V (V) (A) (W) 123 PJP110A PNP -20 -12 -10 75 BCE TO-220 PJP168A PNP -20 -13 -18 100 BCE TO-220 PJ13003
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PJP110A
O-220
PJP168A
PJ13003
PJ13005
PJ13007
NPN EBC SOT-23
SOT-23 EBC
NPN transistor ECB TO-92
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tyco igbt
Abstract: tyco igbt 1200V D81359
Text: V23990-P366-F flow PACK 0, 1200V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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V23990-P366-F
Tj150
D81359
tyco igbt
tyco igbt 1200V
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tyco igbt
Abstract: P361 ntc thermistor 500 ohm SPWM Inverter circuit
Text: V23990-P361-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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V23990-P361-F
D81359
tyco igbt
P361
ntc thermistor 500 ohm
SPWM Inverter circuit
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P364
Abstract: tyco igbt V23990-P364-F
Text: V23990-P364-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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V23990-P364-F
Tj150
D81359
P364
tyco igbt
V23990-P364-F
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tyco igbt
Abstract: SPWM 555 spwm igbt tyco igbt 1200V HP-1001 SPWM Inverter
Text: V23990-P360-F flow PACK 0, 1200V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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V23990-P360-F
Tj150
D81359
tyco igbt
SPWM 555
spwm igbt
tyco igbt 1200V
HP-1001
SPWM Inverter
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sc 6038
Abstract: tyco igbt p363
Text: V23990-P363-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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V23990-P363-F
D81359
sc 6038
tyco igbt
p363
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tyco igbt
Abstract: V23990-P365-F 600v 30 kHz IGBT
Text: V23990-P365-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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V23990-P365-F
D81359
tyco igbt
V23990-P365-F
600v 30 kHz IGBT
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germanium transistors PNP
Abstract: IBM43RF0100 SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR
Text: Application Note Evaluating the IBM43RF0100 SiGe Low Noise Transistor Introduction The IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor is a silicon-germanium SiGe NPN transistor designed for high performance, low cost applications. IBM’s SiGe manufacturing and packaging techniques result in a transistor with high gain, low noise,
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IBM43RF0100
IBM43RF0100EV
823Vdc.
germanium transistors PNP
SiGe RF TRANSISTOR
pnp germanium transistor
SiGe PNP
TRANSISTOR MAKING LIST
SiGe PNP transistor
FMMT2907ATA
bipolar transistor ghz s-parameter
J1 TRANSISTOR
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A 720 transistor
Abstract: MGW12N120D
Text: MOTOROLA -SEMICONDUCTOR TECHNICAL DATA Advance information DataSheet MGW12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate This high voltage Insulated Gate Bipolar Transistor IGBT is co-packaged with a
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MGW12N120D
O-247
A 720 transistor
MGW12N120D
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MGY25N120D
Abstract: No abstract text available
Text: . - MOTOROLA m~EMlcoNDu~ToR TECHNICAL DATA Advanceinformation DataSheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode MGY25N120D Silicon Gate This high voltage Insulated Gate Bipolar Transistor lGB~ is co-packaged with a
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MGY25N120D
O-264
MGY25N120D
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tip122 tip127 audio board
Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
Text: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents
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Power247TM,
tip122 tip127 audio board
BUK 450-1000
Transistor Selection Guide
tip122 tip127 audio amp
FJL6920 equivalent
car amp
TIP41/TIP42
kse13009
TRANSISTOR TIP31
FJL6920
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APT13003Z-E1
Abstract: transistor 2808 APT13003 bcd
Text: Preliminary Datasheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13003 is a high voltage, high speed switching NPN Power transistor specially designed for off-line switch mode power supplies with low output power.
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APT13003
APT13003
APT13003Z-E1
transistor 2808
APT13003 bcd
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tyco igbt
Abstract: V23990-P503-F THERMISTOR NTC 1100 ohm break resistor in igbt igbt tyco 270 IGBT tyco
Text: V23990-P503-F preliminary data version 0303 fast PACK 0 H, 600V Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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V23990-P503-F
D81359
RT/R25
tyco igbt
V23990-P503-F
THERMISTOR NTC 1100 ohm
break resistor in igbt
igbt tyco 270
IGBT tyco
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BFR540
Abstract: MSB003 BFR540 philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR540 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 The transistor is encapsulated in a
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BFR540
BFR540
MSB003
BFR540 philips
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transistor
Abstract: QM30TB-H technical data mitsubishi KE924503 ke92 FILE TRANSISTOR
Text: Mitsubishi QM30TB-H datasheet technical data Page 1 of 6 Mitsubishi QM30TB-H = Powerex KE924503 7/28/2008 Mitsubishi QM30TB-H datasheet technical data
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QM30TB-H
QM30TB-H
KE924503
com/mitsubishi-data/transistor/qm30tb-h
transistor
technical data
mitsubishi
KE924503
ke92
FILE TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13005 series are high voltage, high speed, high efficiency switching transistor, and it is specially designed for off-line switch mode power supplies with
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APT13005
O-220-3,
O220-3
O-220F-3
APT13005
O-220F-3
O-220-3
O-220-3
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tyco igbt
Abstract: igbt tyco V23990-P501-F
Text: V23990-P501-F preliminary data version 0303 fast PACK 0 H, 600V Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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V23990-P501-F
100Rgon
D81359
RT/R25
tyco igbt
igbt tyco
V23990-P501-F
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wechselrichter
Abstract: TRANSISTOR TC 100 RG 150 diode diode p 600 k
Text: target datasheet version 09/02 V23990-P439-F flow PACK 1, 1200V Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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V23990-P439-F
TJ125
-100A/
-200A/
D81359
wechselrichter
TRANSISTOR TC 100
RG 150 diode
diode p 600 k
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Untitled
Abstract: No abstract text available
Text: OBSOLETE - PLEASE USE ZXTC4591AMC ZXTD4591AM832 MPPS Miniature Package Power Solutions Complementary dual 40V high performance transistor Summary NPN Transistor - VCEO = 40V; RSAT = 195m⍀; IC = 2.5A PNP Transistor - VCEO = -40V; RSAT = 350m⍀; IC = -2A
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ZXTC4591AMC
ZXTD4591AM832
D-81541
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Untitled
Abstract: No abstract text available
Text: V23990-P704-F-PM final data sheet flow 90PACK 1 600V/ 30A V23990-P704-F-01-14 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage
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V23990-P704-F-PM
90PACK
V23990-P704-F-01-14
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MC 340 transistor
Abstract: P367 tyco igbt 1200V V23990-P367-F-PM
Text: Target datasheet flow PACK 0, 1200V, 15A Version 0102 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified V23990-P367-F-PM Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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V23990-P367-F-PM
-100A/ms
D81359
MC 340 transistor
P367
tyco igbt 1200V
V23990-P367-F-PM
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V23990-P366-F-PM
Abstract: tyco igbt tyco igbt 1200V
Text: Target datasheet flow PACK 0, 1200V, 10A Version 0102 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified V23990-P366-F-PM Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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V23990-P366-F-PM
D81359
V23990-P366-F-PM
tyco igbt
tyco igbt 1200V
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