D5510
Abstract: BTD5510F3 transistor 406 specification BTD5510
Text: Spec. No. : C658F3 Issued Date : 2005.08.23 Revised Date :2006.11.29 Page No. : 1/3 CYStech Electronics Corp. NPN Epitaxial Planar Transistor BTD5510F3 Description The BTD5510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed
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C658F3
BTD5510F3
BTD5510F3
O-263-3L
UL94V-0
D5510
transistor 406 specification
BTD5510
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D5510
Abstract: darlington transistor C 3300 BTD5510F3
Text: Spec. No. : C658F3 Issued Date : 2005.08.23 Revised Date : Page No. : 1/5 CYStech Electronics Corp. NPN Epitaxial Planar Transistor BTD5510F3 Description The BTD5510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application.
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C658F3
BTD5510F3
BTD5510F3
O-263-3L
UL94V-0
D5510
darlington transistor C 3300
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transistor j307
Abstract: j352 sk063
Text: Freescale Semiconductor Technical Data Document Number: AFT18H357-24S Rev. 0, 3/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to
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AFT18H357--24S
AFT18H357-24SR6
transistor j307
j352
sk063
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A9M15
Abstract: AFT09MS015N TRANSISTOR Z10 D55295 815 transistor
Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 1, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136
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AFT09MS015N
AFT09MS015NT1
A9M15
AFT09MS015N
TRANSISTOR Z10
D55295
815 transistor
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136
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AFT09MS015N
AFT09MS015NT1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136
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AFT09MS015N
AFT09MS015NT1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136
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AFT09MS015N
AFT09MS015NT1
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LL1608-FHN2K
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35005MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet
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MRFG35005MT1
RDMRFG35005MT1BWA
LL1608-FHN2K
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MRFG35010M
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35010MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet
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RDMRFG35010MT1BWA
MRFG35010MT1
MRFG35010M
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transistor marking z11
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Available at http://www.freescale.com/rf, Go to Tools Rev. 1, 6/2005 RF Reference Design Library Gallium Arsenide PHEMT MRFG35005NT1 MRFG35005MT1 BWA RF Power Field Effect Transistor Device Characteristics From Device Data Sheet
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MRFG35005NT1
MRFG35005MT1
transistor marking z11
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D55342M07B
Abstract: 100B102JP500X rick miller MRFG35010M LL-210 D55342M07
Text: Freescale Semiconductor Technical Data Available at http://www.freescale.com/rf, Go to Tools Rev. 1, 6/2005 RF Reference Design Library Gallium Arsenide PHEMT MRFG35010NT1 MRFG35010MT1 BWA RF Power Field Effect Transistor Device Characteristics From Device Data Sheet
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MRFG35010NT1
MRFG35010MT1
D55342M07B
100B102JP500X
rick miller
MRFG35010M
LL-210
D55342M07
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BF180
Abstract: 250N HA5013 MM5013 HARRIS SEMICONDUCTOR
Text: Harris Semiconductor No. MM5013.1 Harris Linear May 1996 HA5013 SPICE Macromodel CFA Authors: Ronald Mancini and Chris Henningsen Introduction The topology of the input buffer section is a basic four transistor voltage follower. Additional components are added to
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MM5013
HA5013
1-800-4-HARRIS
BF180
250N
HARRIS SEMICONDUCTOR
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Mancini* CFA
Abstract: 250N HA5023 HARRIS SEMICONDUCTOR Mancini DP104
Text: Harris Semiconductor No. MM5023 Harris Linear May 1996 HA5023 SPICE Macromodel CFA Authors: Ronald Mancini and Steve Jost Introduction The topology of the input buffer section is a basic four transistor voltage follower. Additional components are added to
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MM5023
HA5023
1-800-4-HARRIS
Mancini* CFA
250N
HARRIS SEMICONDUCTOR
Mancini
DP104
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Mancini
Abstract: Mancini* CFA 250N HA5025 HARRIS SEMICONDUCTOR MM5025
Text: Harris Semiconductor No. MM5025.1 Harris Linear September 1996 HA5025 SPICE Macromodel CFA Authors: Ronald Mancini and Don LaFontaine Introduction The topology of the input buffer section is a basic four transistor voltage follower. Additional components are added to
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MM5025
HA5025
1-800-4-HARRIS
Mancini
Mancini* CFA
250N
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Mancini* CFA
Abstract: 250N HA5025 BF180
Text: Harris Semiconductor No. MM5025.2 Harris Linear August 1997 HA5025 SPICE Macromodel CFA Authors: Ronald Mancini and Don LaFontaine Introduction The topology of the input buffer section is a basic four transistor voltage follower. Additional components are added to
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MM5025
HA5025
1-800-4-HARRIS
Mancini* CFA
250N
BF180
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250N
Abstract: HA5022
Text: Harris Semiconductor No. MM5022 Harris Linear April 1996 HA5022 SPICE Macromodel CFA Authors: Ronald Mancini and Jeff Lies Introduction The topology of the input buffer section is a basic four transistor voltage follower. This configuration was used in order
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MM5022
HA5022
250N
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db14g
Abstract: CDR33BX104AKWS MRFG35010MT1 T491X226K035AS LL1608-FHN2K 85dBp MRFG35010M
Text: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35010MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet
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MRFG35010MT1
MRFG35010MT1
RDMRFG35010MT1BWA
db14g
CDR33BX104AKWS
T491X226K035AS
LL1608-FHN2K
85dBp
MRFG35010M
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250N
Abstract: HA5024 BF180 dp104
Text: Harris Semiconductor No. MM5024.1 Harris Linear September 1996 HA5024 SPICE Macromodel CFA Authors: Ronald Mancini and Don LaFontaine Introduction The topology of the input buffer section is a basic four transistor voltage follower. This configuration was used in order
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HA5024
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BF180
dp104
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MRFG35005MT1
Abstract: CDR33BX104AKWS T491X226K035AS 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM LL-210
Text: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35005MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet
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MRFG35005MT1
MRFG35005MT1
RDMRFG35005MT1BWA
CDR33BX104AKWS
T491X226K035AS
2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
LL-210
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Untitled
Abstract: No abstract text available
Text: ObE D N AMER PHILIPS/DISCRETE 8 6 0 1 1 9 3 6 D • bb53T31 0014174 4 ■ r - BLY91A I V i. V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage of 28 V . The transistor is resistance stabilized and
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bb53T31
BLY91A
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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KD421K10
Abstract: No abstract text available
Text: KD421K10_ Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U S l D s r H n Q tO il Transistor Module 100 Amperes/1000 Volts O U T L I N E DRAW ING Description: The Powerex Dual Darlington Transistor Modules are high power
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KD421K10_
Amperes/1000
EIC20-
KD421K10
KD421K10
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transistor D55
Abstract: No abstract text available
Text: m m oEK Powerex, Inc., 200 Hfflis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 KD421K10 Dual Darlington Transistor Module 100 Amperes/1000 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature
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KD421K10
Amperes/1000
transistor D55
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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