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    TRANSISTOR D3 Search Results

    TRANSISTOR D3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE - PLEASE USE ZXTC4591AMC ZXTD4591AM832 MPPS Miniature Package Power Solutions Complementary dual 40V high performance transistor Summary NPN Transistor - VCEO = 40V; RSAT = 195m⍀; IC = 2.5A PNP Transistor - VCEO = -40V; RSAT = 350m⍀; IC = -2A


    Original     		PDF ZXTC4591AMC ZXTD4591AM832 D-81541

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE - PLEASE USE ZXTC6720MC ZXTDE4M832 MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 80V; RSAT = 68m ; C = 3.5A VCEO = -70V; RSAT = 117m ; C = -2.5A


    Original     		PDF ZXTC6720MC ZXTDE4M832

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXCT6718MC ZXTDB2M832 MPPS Miniature Package Power Solutions COMPLEMENTARY DUAL 20V LOW SATURATION TRANSISTOR SUMMARY NPN Transistor PNP Transistor VCEO = 20V; RSAT = 47m ; C = 4.5A VCEO = -20V; RSAT = 64m ; C = -3.5A


    Original     		PDF ZXCT6718MC ZXTDB2M832

    TRANSISTOR blw97

    Abstract: MGP705 4312 020 36640 BLW97 transistor d1 391 MLA876 SOT121B 101 Ceramic Disc Capacitors
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW97 HF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor designed for use in class-A,


    Original     		PDF BLW97 SC08a TRANSISTOR blw97 MGP705 4312 020 36640 BLW97 transistor d1 391 MLA876 SOT121B 101 Ceramic Disc Capacitors

    transistor gl 1117

    Abstract: MGP485 Transistor gl 1117 B BLW60C IEC 320 C13 MSB056 MGP480
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW60C VHF power transistor Product specification File under Discrete Semiconductors, SC08a March 1993 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,


    Original     		PDF BLW60C SC08a transistor gl 1117 MGP485 Transistor gl 1117 B BLW60C IEC 320 C13 MSB056 MGP480

    D313 amplifier

    Abstract: No abstract text available
    Text: UTC D313 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC D313 is designed for use in general purpose amplifier and switching applications. 1 TO-220 1:BASE 2:COLLECTOR 3:EMITTER ABSOLUTE MAXIMUM RATINGS SYMBOL VALUE UNIT


    Original     		PDF O-220 QW-R203-001 D313 amplifier

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE - PLEASE USE ZXTC6717MC ZXTDA1M832 MPPS Miniature Package Power Solutions DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 15V; RSAT = 45m ; C = 4.5A VCEO = -12V; RSAT = 60m ; C = -4A DESCRIPTION


    Original     		PDF ZXTC6717MC ZXTDA1M832

    transistor D313

    Abstract: d313 transistor D313 amplifier d313 D313 for amplifier transistor D313 DATA SHEET D313 E D313 equivalent TRANSISTOR NPN D313 d313 transistor data
    Text: UTC D313 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC D313 is designed for use in general purpose amplifier and switching applications. 1 TO-220 1:BASE 2:COLLECTOR 3:EMITTER ABSOLUTE MAXIMUM RATINGS SYMBOL VALUE UNIT


    Original     		PDF O-220 QW-R203-001 transistor D313 d313 transistor D313 amplifier d313 D313 for amplifier transistor D313 DATA SHEET D313 E D313 equivalent TRANSISTOR NPN D313 d313 transistor data

    transistor gl 1117

    Abstract: trimmer 3-30 pf BLW60C MSB056
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW60C VHF power transistor Product specification March 1993 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial


    Original     		PDF BLW60C transistor gl 1117 trimmer 3-30 pf BLW60C MSB056

    BLW50F

    Abstract: PHILIPS 4312 amplifier SOT123 Package HF power amplifier 4312 020 36640 MGP472
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW50F HF/VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in


    Original     		PDF BLW50F SC08a BLW50F PHILIPS 4312 amplifier SOT123 Package HF power amplifier 4312 020 36640 MGP472

    4312 020 36640

    Abstract: SOT121B SOT121 BLW97 PHILIPS 4312 amplifier TRANSISTOR blw97 3 pin TRIMMER capacitor 3 pin trimmer capacitors
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW97 HF power transistor Product specification August 1986 Philips Semiconductors Product specification HF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor designed for use in class-A, AB and B operated high-power


    Original     		PDF BLW97 4312 020 36640 SOT121B SOT121 BLW97 PHILIPS 4312 amplifier TRANSISTOR blw97 3 pin TRIMMER capacitor 3 pin trimmer capacitors

    BD443

    Abstract: MGP540 BD228 BLW77 MGP523 RF POWER TRANSISTOR NPN vhf philips ceramic disc capacitors 1500 pf
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW77 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power


    Original     		PDF BLW77 BD443 MGP540 BD228 BLW77 MGP523 RF POWER TRANSISTOR NPN vhf philips ceramic disc capacitors 1500 pf

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BLW96 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated high power


    Original     		PDF BLW96

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital Transistors built-in resistors EMD38 General purpose digital transistor (NPN+PNP) SOT-563 FEATURES  DTr1:NPN digital transistor,DTC114Y DTr2:PNP digital transistor,DTA113Z  Mounting possible with SOT-563 automatic mounting machines


    Original     		PDF EMD38 OT-563 DTC114Y DTA113Z OT-563 -20mA -10mA 100MHz

    BLW83

    Abstract: philips carbon film resistor BY206 BD204 RF amplifiers in the HF and VHF
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW83 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor for use in transmitting amplifiers operating in the h.f. and


    Original     		PDF BLW83 BLW83 philips carbon film resistor BY206 BD204 RF amplifiers in the HF and VHF

    BD443

    Abstract: BLW76 BD228 philips polystyrene capacitor MGP501
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW76 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power


    Original     		PDF BLW76 BD443 BLW76 BD228 philips polystyrene capacitor MGP501

    4312 020 36640

    Abstract: BLW86 HF power amplifier ferroxcube wideband hf choke PHILIPS 4312 amplifier BY206 BY206 diode SOt123 Package 22 pf trimmer capacitor datasheet 4 carbon wire resistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW86 HF/VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,


    Original     		PDF BLW86 SC08a 4312 020 36640 BLW86 HF power amplifier ferroxcube wideband hf choke PHILIPS 4312 amplifier BY206 BY206 diode SOt123 Package 22 pf trimmer capacitor datasheet 4 carbon wire resistor

    marking DA1

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTC6717MC ZXTDA1M832 MPPS Miniature Package Power Solutions DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 15V; RSAT = 45m ; C = 4.5A VCEO = -12V; RSAT = 60m ; C = -4A


    Original     		PDF ZXTC6717MC ZXTDA1M832 marking DA1

    BLW96

    Abstract: PR37 RESISTOR RESISTOR pr37 MGP700 BLW96 HF power amplifier SOT121B
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW96 HF/VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,


    Original     		PDF BLW96 SC08a BLW96 PR37 RESISTOR RESISTOR pr37 MGP700 BLW96 HF power amplifier SOT121B

    ZETEX complementary transistor PRODUCT LINE

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTC4591AMC ZXTD4591AM832 MPPS Miniature Package Power Solutions Complementary dual 40V high performance transistor Summary NPN Transistor - VCEO = 40V; RSAT = 195m⍀; IC = 2.5A PNP Transistor - VCEO = -40V; RSAT = 350m⍀; IC = -2A


    Original     		PDF ZXTC4591AMC ZXTD4591AM832 D-81541 ZETEX complementary transistor PRODUCT LINE

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    Untitled

    Abstract: No abstract text available
    Text: mß/EREX KD221275A7 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 DlISl D3 flinQtOfl Transistor Module 75 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use


    OCR Scan     		PDF KD221275A7 Amperes/1200

    Untitled

    Abstract: No abstract text available
    Text: T • bb53131 □ D3333tl 330 HIAPX N APIER PHILIPS/DISCRETE b'lE D Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The


    OCR Scan     		PDF bb53131 D3333t BFT93W OT323 BFT93W BFT93.