D2130
Abstract: 2SD2130
Text: 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2130 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2SD2130
D2130
2SD2130
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D2130
Abstract: No abstract text available
Text: 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2130 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2SD2130
-55HIBA
D2130
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D2130
Abstract: 2SD2130
Text: 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2130 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2SD2130
D2130
2SD2130
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2SD2130
Abstract: D2130
Text: 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2130 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2SD2130
2SD2130
D2130
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D2130
Abstract: 2SD2130
Text: 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2130 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2SD2130
D2130
2SD2130
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D2130
Abstract: 2SD2130
Text: 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2130 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2SD2130
D2130
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Untitled
Abstract: No abstract text available
Text: 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2130 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2SD2130
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XC6SLX16-CSG324
Abstract: ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL DS695
Text: XPS Thin Film Transistor TFT Controller (v2.00a) DS695 September 16, 2009 Product Specification 0 0 Introduction LogiCORE Facts The XPS Thin Film Transistor (TFT) controller is a hardware display controller IP core capable of displaying 256k colors. The XPS TFT controller
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DS695
CH-7301
XC6SLX16-CSG324
ch7301 DVI VHDL
DVI VHDL
xilinx ch7301
CHRONTEL 7301 Xilinx
XPS Thin Film Transistor(TFT) Controller
TFT controller
XC4VLX25-FF668-10
a/ch7301 DVI VHDL
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D2195
Abstract: D219
Text: CYStech Electronics Corp. NPN Epitaxial Planar Transistor BVCEO IC RCESAT BTD2195J3 Description Spec. No. : C654J3 Issued Date : 2004.03.18 Revised Date :2009.02.04 Page No. : 1/6 120V 4A 600mΩ The BTD2195J3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low
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BTD2195J3
C654J3
BTD2195J3
O-252
UL94V-0
D2195
D219
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transistor d2118
Abstract: IB1011S190 d2118 D2118 transistor
Text: Part Number: Integra IB1011S190 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011S190 is designed for L-Band avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under 10µs, 1%, at VCC = 60V, this
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IB1011S190
IB1011S190
IB1011S190-REV-NC-DS-REV-D
transistor d2118
d2118
D2118 transistor
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d2152
Abstract: No abstract text available
Text: NPN TRANSISTOR D2152 3.0A AF OUTPUT AMPLIFIER FOR DC-DC CONVERTER FOR CAMERA MOTOR DRIVER TO-92 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETERS SYMBOL MIN TYP MAX Collector-Emitter Breakdown Voltage BVceo 20 Collector-Base Breakdown Voltage
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D2152
d2152
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D2150
Abstract: "NPN Transistor"
Text: NPN TRANSISTOR D2150 3.0A AF OUTPUT AMPLIFIER FOR DC-DC CONVERTER FOR CAMERA MOTOR DRIVER SOT-89 1. Base 2. Collector 3. Emitter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETERS SYMBOL MIN TYP MAX Collector-Emitter Breakdown Voltage
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D2150
OT-89
D2150
"NPN Transistor"
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d2493
Abstract: c4468 transistor D2562 B1649 c4467 c4381 c4131 transistor A1492 a1695 power transistor c4153 c3852
Text: Contents Transistor Selection Guide.2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10
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A1186.
A1215.
A1216.
A1262.
A1294.
A1295.
A1303.
A1386/A
A1488/A
A1492.
d2493
c4468
transistor D2562 B1649
c4467
c4381
c4131
transistor A1492
a1695 power transistor
c4153
c3852
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c4381
Abstract: D2493 c4467 c4468 C4131 c4467 a1694 C3519 c3852 C3834 d2494
Text: Contents Transistor Selection Guide .2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10
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A1186.
A1215.
A1216.
A1262.
A1294.
A1295.
A1303.
A1386/A
A1488/A
A1492.
c4381
D2493
c4467
c4468
C4131
c4467 a1694
C3519
c3852
C3834
d2494
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D217 OPTO
Abstract: opto transistor moc MOCD217 RS481A D217
Text: , MOTOROLA SEMICONDUCTOR ● TECHNICAL Order this document by MOCD217/D DATA Dual Channel Small Outline Optoisolators MOCQ217 Transistor Output [CTR = 100% Min] These devices consist of two optically coupled to two monolithic mountable, small outline, plastic
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MOCD217/D
MOCQ217
MKI45BP,
2PHX34204P-I
D217 OPTO
opto transistor moc
MOCD217
RS481A
D217
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B81121 X2 mkt
Abstract: B81121 X2 mkp AN-TDA16888-0-010323 ELKO capacitors MKT .22K 250V X2 EPCOS 230 00 O ELKO CAPACITOR 63v 2,2 elko capacitor TDA 16888 B81121 X2
Text: Version 1.1 , March 2001 Application Note AN-TDA16888-0-010323 TDA 16888: Multioutput Single Transistor Forward Converter 150W / 100kHz Author: Michael Herfurth Published by Infineon Technologies AG http://www.infineon.com Power Management & Supply N e v e r
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AN-TDA16888-0-010323
100kHz
V/18A;
-12V/1A;
V/100mA
Room14J1
Room1101
B81121 X2 mkt
B81121 X2 mkp
AN-TDA16888-0-010323
ELKO capacitors
MKT .22K 250V X2
EPCOS 230 00 O
ELKO CAPACITOR 63v 2,2
elko capacitor
TDA 16888
B81121 X2
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Untitled
Abstract: No abstract text available
Text: AO5600E Complementary Enhancement Mode Field Effect Transistor General Description Features The AO5600E uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other
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AO5600E
AO5600E
SC-89-6
otherwi10ms
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TRANSISTOR C 4460
Abstract: d2150a TO126ML D2150 BTD1857AD3 126ML
Text: CYStech Electronics Corp. Spec. No. : C855D3 Issued Date : 2004.09.21 Revised Date :2006.06.12 Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AD3 Description • High BVCEO • High current capability • Complementary to BTB1236AD3 • Pb-free package
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C855D3
BTD1857AD3
BTB1236AD3
O-126ML
UL94V-0
TRANSISTOR C 4460
d2150a
TO126ML
D2150
BTD1857AD3
126ML
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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Untitled
Abstract: No abstract text available
Text: m NBm x KD221K05HB Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 H lQ h 'B & t S Dual Darlington Transistor Module 50 Amperes/1000 Volts Description: The Powerex High-Beta Dual Darlington Transistor Modules are high power devices designed for
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KD221K05HB
Amperes/1000
peres/1000
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transistor d2118
Abstract: No abstract text available
Text: 2SD2118F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D2118*Q , where ★ is hFE code and □ is lot number • excellent current-to-gain characteristics • 2SD2118F5 (CPT F5) 6.5 ± 0.2 2.3
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2SD2118F5
SC-63)
D2118
transistor d2118
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transistor d2118
Abstract: D2118 D2118 transistor
Text: 2SD2118F5 Transistor, NPN Features Dimensions Units : mm available in CPT F5 (SC-63) package • package marking: D2118-*Q, where ★ is hFE code and □ is lot number • excellent current-to-gain characteristics • low collector saturation voltage, typically VCE(sat) = 0.3 V for
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2SD2118F5
SC-63)
D2118-
2SD2118F5
transistor d2118
D2118
D2118 transistor
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opto d213
Abstract: d213 opto MOCD213 T
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Channel Sm all Outline Optoisolator MOCD213 Transistor Output [CTR > 100% Min] This device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, In a surface
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MOCD213
opto d213
d213 opto
MOCD213 T
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