C5201 transistor
Abstract: c5201 Marking 8A 737 TRANSISTOR Transistor C5201 k 1457 BTC5201D3
Text: Spec. No. : C653D3 Issued Date : 2003.10.03 CYStech Electronics Corp. Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTC5201D3 Features • Low VCE sat • High BVCEO • Excellent current gain characteristics Symbol Outline TO-126ML
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C653D3
BTC5201D3
O-126ML
UL94V-0
C5201 transistor
c5201
Marking 8A 737 TRANSISTOR
Transistor C5201
k 1457
BTC5201D3
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TL 188 TRANSISTOR PNP
Abstract: HTIP117D
Text: HI-SINCERITY Spec. No. : HD200204 Issued Date : 2002.04.01 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HTIP117D PNP EPITAXIAL PLANAR TRANSISTOR Description TO-126ML The HTIP117D is designed for use in general purpose amplifier and low-speed
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HD200204
HTIP117D
O-126ML
HTIP117D
183oC
217oC
260oC
TL 188 TRANSISTOR PNP
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H11-44
Abstract: No abstract text available
Text: PN P S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H1144 █ APPLICATIONS Medium frequency power amplifier，Medium Seed switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML Tstg——Storage Temperature………………………… -55~150℃
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H1144
O-126ML
-120V
-100V
-100V,
-100mA
-500mA,
-50mA
H11-44
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hb123d
Abstract: No abstract text available
Text: NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HB123D █ APPLICATIONS Power Amplifie █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃
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HB123D
O-126ML
300mA
500mA
100mA,
hb123d
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Untitled
Abstract: No abstract text available
Text: N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HM13002 █ HIGH VOLTAGE SWITCH MODE APPLICICATIONS High Speed Switching Suitable for Switching Regulator and Montor Control █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML
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HM13002
O-126ML
500mA
100mA
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Untitled
Abstract: No abstract text available
Text: NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H2682 █ APPLICATIONS . Audio Power Amplifie. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃
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H2682
O-126ML
10AIC
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B1143
Abstract: transistor D1683 2SD 1143 2SB1143S
Text: Ordering number : EN2063C 2SB1143/2SD1683 Bipolar Transistor http://onsemi.com – 50V, (–)4A, Low VCE(sat), (PNP)NPN Single TO-126ML Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • • Adoption of FBET, MBIT processes
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EN2063C
2SB1143/2SD1683
O-126ML
2SB1143
B1143
transistor D1683
2SD 1143
2SB1143S
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lb123d
Abstract: No abstract text available
Text: DC COMPONENTS CO., LTD. LB123D DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high voltage, high speed switching circuits, and amplifier applications. TO-126ML Pinning .163 4.12 .153(3.87) 1 = Emitter
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LB123D
O-126ML
lb123d
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2sc3902
Abstract: 2sa1507 EN2101E
Text: Ordering number : EN2101E 2SA1507/2SC3902 Bipolar Transistor http://onsemi.com – 160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single TO-126ML Applications • Color TV audio output, converters, inverters Features • • • Large current capacity • Adoption of FBET and MBIT process
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EN2101E
2SA1507/2SC3902
O-126ML
2SA1507
180where
2sc3902
2sa1507
EN2101E
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sd1609
Abstract: sd 1609 TO126ML HSB1109 HSD1609
Text: HI-SINCERITY Spec. No. : HE6606 Issued Date : 1993.03.15 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSD1609 NPN EPITAXIAL PLANAR TRANSISTOR Features • Low frequency high voltage amplifier • Complementary pair with HSB1109 TO-126ML
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HE6606
HSD1609
HSB1109
O-126ML
183oC
217oC
260oC
sd1609
sd 1609
TO126ML
HSB1109
HSD1609
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Untitled
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE6602 Issued Date : 1993.03.15 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSC3953 NPN EPITAXIAL PLANAR TRANSISTOR Description High definition CRT display video output, wide-band amplifier. TO-126ML Features • High fT: 500MHz
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HE6602
HSC3953
O-126ML
500MHz
120Vmin
183oC
217oC
260oC
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sc2682
Abstract: HSC2682
Text: HI-SINCERITY Spec. No. : HE6626 Issued Date : 1994.12.07 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSC2682 NPN EPITAXIAL PLANAR TRANSISTOR Description Audio frequency power amplifier, high frequency power amplifier. TO-126ML Absolute Maximum Ratings TA=25°C
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HE6626
HSC2682
O-126ML
183oC
217oC
260oC
sc2682
HSC2682
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HMPSA44V
Abstract: A44V
Text: HI-SINCERITY Spec. No. : HE6611 Issued Date : 1993.05.17 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HMPSA44V NPN EPITAXIAL PLANAR TRANSISTOR Description The HMPSA44V is designed for application that require high voltage. Features TO-126ML
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HE6611
HMPSA44V
HMPSA44V
O-126ML
300mV
HMPSA94V
183oC
217oC
260oC
A44V
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sd669a
Abstract: HSD669A HSB649A
Text: HI-SINCERITY Spec. No. : HE6630 Issued Date : 1995.12.18 Revised Date : 2006.07.27 Page No. : 1/4 MICROELECTRONICS CORP. HSD669A NPN Epitaxial Planar Transistor Description Low frequency power amplifier complementary pair with HSB649A TO-126ML Absolute Maximum Ratings T =25°C
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HE6630
HSD669A
HSB649A
O-126ML
150oC
200oC
183oC
217oC
260oC
245oC
sd669a
HSD669A
HSB649A
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h882
Abstract: h882 transistor 5v 10w amplifier ic Shantou Huashan Electronic Devices h882 data DC06A h882 NPN
Text: NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H882 █ ＡＰＰＬＩＣＡＴＩＯＮＳ Audio Frequency Power Amplifier , Switching Power Amplifier. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML T stg ——Storage Temperature………………………… －55~150℃
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O-126ML
10VIE
h882
h882 transistor
5v 10w amplifier ic
Shantou Huashan Electronic Devices
h882 data
DC06A
h882 NPN
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Untitled
Abstract: No abstract text available
Text: N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBD195 █ APPLICATIONS . .Medium Power Amplifie. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃
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HBD195
O-126ML
500mA
10Msmax
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h1357
Abstract: audio power amplifie
Text: P N P S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H1357 █ APPLICATIONS . Audio Power Amplifie. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃
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H1357
O-126ML
-500mA
10Msmax
h1357
audio power amplifie
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HBD437D
Abstract: DSA0026081
Text: HI-SINCERITY Spec. No. : HD200201 Issued Date : 2001.04.01 Revised Date : 2005.08.16 Page No. : 1/4 MICROELECTRONICS CORP. HBD437D COMPLEMENTARY SILICON POWER TRANSISTORS Description The HBD437D is silison epitaxial-base NPN power transistor in TO-126ML plastic
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HD200201
HBD437D
HBD437D
O-126ML
HBD438D.
O-126ML
Collecto60
183oC
217oC
260oC
DSA0026081
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H649A
Abstract: H649 Huashan
Text: P NP S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H649A █ LOW FREQUANCY POWER AMPLIFIER █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃
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H649A
O-126ML
-180V
-160V
-150mA
-500mA
-500mA,
-50mA
-10mA,
-160V,
H649A
H649
Huashan
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HSB1109
Abstract: HSD1609 sb1109 TL 188 TRANSISTOR PNP
Text: HI-SINCERITY Spec. No. : HE6607 Issued Date : 1993.03.15 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSB1109 PNP EPITAXIAL PLANAR TRANSISTOR Features • Low frequency high voltage amplifier • Complementary pair with HSD1609 TO-126ML
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HE6607
HSB1109
HSD1609
O-126ML
183oC
217oC
260oC
HSB1109
HSD1609
sb1109
TL 188 TRANSISTOR PNP
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OC 140 germanium transistor
Abstract: germanium power devices corporation germanium transistors NPN OC 74 germanium transistor HSD879D Germanium Transistor
Text: HI-SINCERITY Spec. No. : HD200203 Issued Date : 1996.07.15 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSD879D SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V and 3v electronic flash use. TO-126ML Features • Charger-up time is about 1 ms faster than of a germanium transistor.
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HD200203
HSD879D
O-126ML
183oC
217oC
260oC
OC 140 germanium transistor
germanium power devices corporation
germanium transistors NPN
OC 74 germanium transistor
HSD879D
Germanium Transistor
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HSB649A
Abstract: TL 188 TRANSISTOR PNP SB649A HSD669A
Text: HI-SINCERITY Spec. No. : HE6629 Issued Date : 1995.12.18 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSB649A SILICON PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier complementary pair with HSD669A. TO-126ML Absolute Maximum Ratings TA=25°C
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HE6629
HSB649A
HSD669A.
O-126ML
183oC
217oC
260oC
HSB649A
TL 188 TRANSISTOR PNP
SB649A
HSD669A
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HSB1109
Abstract: HSD1609
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6607 Issued Date : 1993.03.15 Revised Date : 2002.02.06 Page No. : 1/3 HSB1109 PNP EPITAXIAL PLANAR TRANSISTOR Features • Low frequency high voltage amplifier • Complementary pair with HSD1609 TO-126ML
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HE6607
HSB1109
HSD1609
O-126ML
HSB1109
HSD1609
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HSD1609
Abstract: HSB1109
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6606 Issued Date : 1993.03.15 Revised Date : 2002.01.15 Page No. : 1/4 HSD1609 NPN EPITAXIAL PLANAR TRANSISTOR Features • Low frequency high voltage amplifier • Complementary pair with HSB1109 TO-126ML
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HE6606
HSD1609
HSB1109
O-126ML
HSD1609
HSB1109
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