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    TRANSISTOR D 982 Search Results

    TRANSISTOR D 982 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D 982 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Motorola 680

    Abstract: Case 449-02 Motorola transistor 358 TRANSISTOR Z4 marking Z4 marking Z6 MRF9822T1 transistor 9822 nippon ferrite vk200 ferrite bead
    Text: MOTOROLA Order this document by MRF9822T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Small Signal Line Gallium Arsenide PHEMT MRF9822T1 Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT


    Original     		PDF MRF9822T1/D MRF9822T1 MRF9822/D Motorola 680 Case 449-02 Motorola transistor 358 TRANSISTOR Z4 marking Z4 marking Z6 MRF9822T1 transistor 9822 nippon ferrite vk200 ferrite bead

    Motorola transistor 358

    Abstract: Case 449-02
    Text: MOTOROLA Order this document by MRF9822T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Small Signal Line Gallium Arsenide PHEMT MRF9822T1 Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT


    Original     		PDF MRF9822T1/D MRF9822T1 MRF9822T1 MRF9822T1/D Motorola transistor 358 Case 449-02

    MRF141

    Abstract: MOSFET RF POWER
    Text: MRF141 RF FIELD-EFFECT POWER TRANSISTOR PACKAGE STYLE .500 4L FLG DESCRIPTION: The MRF141 is a N-Channel Enhancement-Mode MOSFET RF Power Transistor Designed for 175 MHz 150 W Transmitter and Amplifier Applications. .112x45° S FULL R D B S G MAXIMUM RATINGS


    Original     		PDF MRF141 MRF141 112x45° MOSFET RF POWER

    BLF177

    Abstract: hf power transistor mosfet blf177 mosfet
    Text: BLF177 HF/VHF POWER MOS TRANSISTOR PACKAGE STYLE .500 4L FLG DESCRIPTION: The ASI BLF177 is a N-Channel Enhancement-Mode MOSFET RF Power Transistor Designed for industrial and military applications in the HF/ VHF frequency range. .112x45° S FULL R D Ø.125 NOM.


    Original     		PDF BLF177 BLF177 112x45° hf power transistor mosfet blf177 mosfet

    j48 transistor

    Abstract: TRANSISTOR j4 ASI10545 AJT015
    Text: AJT015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI AJT015 is a silicon bipolar power transistor designed for avionics applications including JTIDS in 960-1215 MHz band. ØE D F G H I FEATURES: M MINIMUM inches / mm


    Original     		PDF AJT015 AJT015 j48 transistor TRANSISTOR j4 ASI10545

    Untitled

    Abstract: No abstract text available
    Text: AJT015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI AJT015 is a silicon bipolar power transistor designed for avionics applications including JTIDS in 960-1215 MHz band. ØE D F G H I FEATURES: M MINIMUM inches / mm


    Original     		PDF AJT015 AJT015

    2SC2782

    Abstract: NPN 2SC2782 transistor 2sc2782
    Text: 2SC2782 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2782 is a12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF power amplifer application up to175 MHz band. PACKAGE STYLE .500 6L FLG A C 1 3 2x Ø N FULL R D FEATURES: 2 • 175 MHz 12.5 V


    Original     		PDF 2SC2782 2SC2782 to175 NPN 2SC2782 transistor 2sc2782

    AJT150

    Abstract: ASI10548
    Text: AJT150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AJT150 is a common base RF power transistor primarily designed for pulsed avionics applications such as, mode-s TCAS and JTIDS. A 4x .062 x 45° 2xB C F E D G 2xR FEATURES:


    Original     		PDF AJT150 AJT150 ASI10548

    AVD400

    Abstract: ASI10567 818 transistor
    Text: AVD400 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AVD400 is a silicon NPN power transistor, designed for high power and low duty cycle DME and IFF applications. A 4x .062 x 45° 2xB .040 x 45° C F E D G FEATURES: I


    Original     		PDF AVD400 AVD400 ASI10567 818 transistor

    AVF450

    Abstract: D 1803 TRANSISTOR TRANSISTOR 1003 1034 transistor TACAN ASI10575 395 transistor transistor b 1166
    Text: AVF450 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AVF450 is a high power common base bipolar transistor. It is designed for pulse applications for TACAN in 1030-1-90 MHz band. A 4x .062 x 45° 2xB C F E D G I FEATURES:


    Original     		PDF AVF450 AVF450 ASI10575 D 1803 TRANSISTOR TRANSISTOR 1003 1034 transistor TACAN ASI10575 395 transistor transistor b 1166

    AVF1000

    Abstract: c 1685 transistor 1334 transistor 1000W 1000W TRANSISTOR NPN 1000w
    Text: AVF1000 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AVF1000 is a common base transistor Designed for pulsed systems Applications up to 1090 MHz. PACKAGE STYLE .450 BAL FLG B A B .120 x 45° 1 E D FEATURES: FULL R C M 2 3 .208 • Internal Input/Output Matching Networks


    Original     		PDF AVF1000 AVF1000 000W/1090 c 1685 transistor 1334 transistor 1000W 1000W TRANSISTOR NPN 1000w

    D 1651 transistor

    Abstract: AJT030 ASI10546
    Text: AJT030 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: L J N O A The ASI AJT030 is a Class-c RF power transistor, designed for JTIDS pulsed output & driver applications from 960 to 1215 MHz. B E K D C .062 x 45° M G FEATURES: F Ø.120


    Original     		PDF AJT030 AJT030 D 1651 transistor ASI10546

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9822T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF9822T1 The RF Small Signal Line G allium A rsenide PHEMT Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT


    OCR Scan     		PDF MRF9822T1/D MRF9822T1 MRF9822/D

    Untitled

    Abstract: No abstract text available
    Text: m 2N2647 \ \ SILICON PN UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N2647 is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Application PACKAGE STYLE TO -18 M O D MAXIMUM RATINGS lc 2.0 A (PULSED) 30 V VCE P 300 m W @ Tc = 25 °C


    OCR Scan     		PDF 2N2647 2N2647

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from


    OCR Scan     		PDF 2SC5010

    2N3702

    Abstract: transistor 2N3702 2n3702 transistor
    Text: 2N3702 SILICON PNP TRANSISTOR DESCRIPTION: The 2N3702 is a Medium Signal Transistor for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 92 MAXIMUM RATINGS 200 mA V o m Ic 25 V P d is s 360 mW @ Ta # 25 0C t stg -65 0C to +150 0C 0 jc


    OCR Scan     		PDF 2N3702 transistor 2N3702 2n3702 transistor

    2N3711

    Abstract: transistor 2N3711
    Text: 2N3711 SILICON NPN TRANSISTOR DESCRIPTION: The 2N3711 is a Small Signal Transistor for General Purpose Low Level Amplifier and Switching Applications. PACKAGE STYLE TO- 92 MAXIMUM RATINGS SO mA V o m Ic SO V p d is s SeO mW @ Ta = 25 0C Tj -e5 0C to &15O 0C


    OCR Scan     		PDF 2N3711 transistor 2N3711

    2N3741

    Abstract: No abstract text available
    Text: 2N3741 SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N3741 is a Medium Power Transistor for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 66 MAXIMUM RATINGS A B C D £ f G H J K L M 4.0 A Ie o m < -80 V 25 W @ Te $ 25 °C


    OCR Scan     		PDF 2N3741 2N3741 RAD8-89 RAD190

    transistor te 2443

    Abstract: 2N3740A
    Text: 2N3740A SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N3740A is a Medium Power Transistor for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO-66 MAXIMUM RATINGS A B C D £ f G H J K L M 4.0 A Ie o m < -60 V 25 W @ Te $ 25 0C


    OCR Scan     		PDF 2N3740A 2N3740A RAD8-89 RAD190 transistor te 2443

    1000c

    Abstract: 2N6677
    Text: 2N6677 SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6677 Power Transistor is Designed for General Purpose Switching and Amplifier Applications. PACKAGE STYLE TO- 3 15 A Ib 5.0 A 400 V O m le < MAXIMUM RATINGS 175 W @ Te # 25 °C P d is s Tj -65 0C to +200 0C


    OCR Scan     		PDF 2N6677 1000c

    Untitled

    Abstract: No abstract text available
    Text: 2N6660 MOS N-CHANNEL TRANSISTOR DESCRIPTION: The 2N6660 is an N-Channel Enhancement-Mode MOS Transistor for General Purpose Switching Applications. MAXIMUM RATINGS 1.1 A @ T c " 25 °C 800 mA @ T c " 100 °C lc -55 °C to *150 °C o < Ts t g m Tj V d s " 60 V


    OCR Scan     		PDF 2N6660

    2N3054A

    Abstract: No abstract text available
    Text: 2N3054A SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N 3054A is a Medium Power Transistor for General Purpose Switching and Amplifier Applications MAXIMUM RATINGS 4.0 A 10 A PEAK lc INCHES A B C D £ f G H J K L M 55 V o m < PACKAGE STYLE TO - 66 Pd is s


    OCR Scan     		PDF 2N3054A RAD8-89

    Untitled

    Abstract: No abstract text available
    Text: 2N6098 SILICON NPN - POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE T0-220 The 2N6098 is an NPN Silicon Power Transistor for General Purpose Switching and Amplifier Applications. DIMENSIONS mm A B C D E F G H L M N P R S T U MAXIMUM RATINGS Ie 10 A IB 4.0 A o


    OCR Scan     		PDF 2N6098 T0-220

    Untitled

    Abstract: No abstract text available
    Text: m 2N3741 \ \ SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N3741 is a Medium Power Transistor for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O -66 MAXIMUM RATINGS INCHES A 6 C D E F G H J K L M 4.0 A lc O m < -80 V 25 W @ Tc = 25 °C


    OCR Scan     		PDF 2N3741 2N3741