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    TRANSISTOR D 880 Search Results

    TRANSISTOR D 880 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D 880 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Transistor C G 774 6-1

    Abstract: transistor 2N4033 2N4033
    Text: 2N4033 General Purpose Transistor Amplifiers/Switches Features: • PNP Silicon Planar RF Transistor. • Small Signal General Purpose Amplifier, Transistor. TO-39 Metal Can Package Dimensions Minimum Maximum A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53


    Original     		PDF 2N4033 Transistor C G 774 6-1 transistor 2N4033 2N4033

    MTD8000M3B-T

    Abstract: No abstract text available
    Text: Photo Transistor Product No: M T D 8 000M3B-T Peak Sensitivity Wavelength: 880nm The MTD8000M3B-T is a photo transistor in a ceramic package. It is well suited for high reliability and high sensitivity applications. FEATURES APPLICATIONS > High Reliability in Demanding Environments


    Original     		PDF 000M3B-T 880nm MTD8000M3B-T

    tip122 tip127 audio amp schematic

    Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
    Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.


    Original     		PDF DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier

    BD135

    Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727
    Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics


    Original     		PDF MRF20030/D MRF20030 BD135 BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W DESCRIPTION (a) (b) 7.0+/-0.2 0.2+/-0.05 FEATURES (4.5) 4.2+/-0.2 (d) 5.6+/-0.2 6.2+/-0.2 (3.6) 8.0+/-0.2 0.65+/-0.2 (b) RD09MUP2 is a MOS FET type transistor


    Original     		PDF RD09MUP2 520MHz, RD09MUP2 520MHz 520MHz)

    Untitled

    Abstract: No abstract text available
    Text: AU K CORP. Photo Transistor KDT-6315A Description The KDT-6315A is a high-sensitivity & surface mount type silicon phototransistor. It’s ideal for various kinds of optical transistor such as touch panels for C/D, ATM, Car navigation system and even AV Instrument and


    Original     		PDF KDT-6315A KDT-6315A Emitter-Collec80

    Untitled

    Abstract: No abstract text available
    Text: AU K CORP. Photo Transistor KST-0315A Description The KST-0315A is a high-sensitivity & surface mount type silicon phototransistor. It’s ideal for various kinds of optical transistor such as touch panels for C/D, ATM, Car navigation system and even AV Instrument and


    Original     		PDF KST-0315A KST-0315A 1000lx,

    0315a

    Abstract: KST-0315A SmD TRANSISTOR av
    Text: AUK CORP. Photo Transistor KST-0315A Description The KST-0315A is a high-sensitivity & surface mount type silicon phototransistor. It’s ideal for various kinds of optical transistor such as touch panels for C/D, ATM, Car navigation system and even AV Instrument and


    Original     		PDF KST-0315A KST-0315A 1000lx, 0315a SmD TRANSISTOR av

    TO-92 CASE MPSA06

    Abstract: F 9016 transistor 7333 A MPSa06 equivalent transistor MPSA06 transistor 7333 MPSA06 transistor MPSA06
    Text: MPSA06 NPN Silicon Transistor Feature: • General Purpose NPN Silicon Planar Epitaxial Amplifier Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 1.40 H 1.14 1.53 K 12.70


    Original     		PDF MPSA06 TO-92 CASE MPSA06 F 9016 transistor 7333 A MPSa06 equivalent transistor MPSA06 transistor 7333 MPSA06 transistor MPSA06

    7333 A

    Abstract: transistor MPSA06 MPSA06 npn 9016 transistor transistor 7333
    Text: MPSA06 NPN Silicon Transistor Feature: • General Purpose NPN Silicon Planar Epitaxial Amplifier Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 1.40 H 1.14 1.53 K 12.70


    Original     		PDF MPSA06 7333 A transistor MPSA06 MPSA06 npn 9016 transistor transistor 7333

    bf199 equivalent

    Abstract: BF199 transistor NPN BF199 bf199 transistor BF199 RF
    Text: BF199 NPN Silicon Transistor Features: • NPN Silicon Planar Epitaxial RF Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 H 1.20 K 12.70 - L 1.982 2.082 M 1.03 1.20 1.40


    Original     		PDF BF199 bf199 equivalent BF199 transistor NPN BF199 bf199 transistor BF199 RF

    bf199 equivalent

    Abstract: bF199 transistor BF199 F 9016 transistor transistor 9016 npn 03 transistor data bf199 ic 9400 BF199 RF transistor NPN BF199
    Text: BF199 NPN Silicon Transistor Feature: • NPN Silicon Planar Epitaxial RF Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 H 1.20 K 12.70 - L 1.982 2.082 M 1.03 1.20 1.40


    Original     		PDF BF199 bf199 equivalent bF199 transistor BF199 F 9016 transistor transistor 9016 npn 03 transistor data bf199 ic 9400 BF199 RF transistor NPN BF199

    philips 3595

    Abstract: BLX69 BLX69A 60306 cm 3593
    Text: 86D 0 1790 D T i N AMER P H I L I P S / D I S C R E T E ObE D • BLX69A bbSBTBl 0014028 4 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 13,5 V, The transistor is resistance stabilized and is


    OCR Scan     		PDF BLX69A philips 3595 BLX69 BLX69A 60306 cm 3593

    NPN transistor 2n2222 Zin

    Abstract: 2N2222 npn transistor 2N2222 transistor SOA 358E-06 NT 407 F TRANSISTOR TO 220 2N2222 motorola ATIC 59 C1
    Text: O rder th is data sheet by MRF858/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e R F L in e MRF858 NPN Silicon RF Power Transistor M otorola P referre d D evice CLASS A 8 00-960 MHz 3.6 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier


    OCR Scan     		PDF MRF858/D MK145BP 2PHX33729Q-0 NPN transistor 2n2222 Zin 2N2222 npn transistor 2N2222 transistor SOA 358E-06 NT 407 F TRANSISTOR TO 220 2N2222 motorola ATIC 59 C1

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE D b b s a ^ i O D 1S171 a - - DEVELOPMENT DATA 11 This data sheet contains advance information and specifications are subject to change without notice. RX1011B350Y T ? 3 3 ' I G - PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in common-base, class-C


    OCR Scan     		PDF 1S171 RX1011B350Y

    motorola AN938

    Abstract: MRF567 mrf56
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF557 The RF Line 1.5 W 870 M H z RF LOW POWER TRANSISTOR NPN SILICON RF LOW POWER TRANSISTOR N P N SILICON . . . d e s ig n e d p rim a rily fo r w id e b a n d large s ig n a l p redrive r stages in the 800 M H z fre q u en cy range.


    OCR Scan     		PDF MRF557 motorola AN938 MRF567 mrf56

    BFX89

    Abstract: case BFX89 transistor IR 652 P
    Text: N AMER P H I L I P S / D I S C R E T E 25E D • b tiS 3 T 3 1 0 0 1 flE 2 3 ■ BFX89 . 'T -S I-iÇ ' N-P-N H.F. WIDEBAND TRANSISTOR N-P-N transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the case. The transistor has a low noise, a very high power gain and good intermodulation properties.


    OCR Scan     		PDF bbS3T31 BFX89 7Z08812 7Z08857 7Z08814 T-37-15 7Z08815 BFX89 case BFX89 transistor IR 652 P

    Untitled

    Abstract: No abstract text available
    Text: N AMER P H IL IP S/ D IS C R ET E ObE D I« bbS3T31 DOIM'IOI T • l LAE4001R T-S\-n MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor fo r common-emitter class-A linear power amplifiers up to 4 GHz. Self-aligned process entirely ion implanted and gold sandwich metallization ensure an optimum temperature profile,


    OCR Scan     		PDF bbS3T31 LAE4001R bt53131

    microstripline

    Abstract: acrian RF POWER TRANSISTOR 8mob5 VCC125 ACRIAN transistor 835 A1W TRANSISTOR 8008-6 8MOB15 8MOB25
    Text: ^ 0 1 8 2 .9 9 8 ':, A C R I AN A Ï NC*; GENERAL »E D 0 0 1 3 S ti D E SC R IP TIO N The 8MOB25 is an internally matched, common base transistor capable of providing 25 Watts of CW RF output power at 835 MHz. This transistor is specifically designed for cellular radio amplifier


    OCR Scan     		PDF 000135b 8MOB25 1-10PF microstripline acrian RF POWER TRANSISTOR 8mob5 VCC125 ACRIAN transistor 835 A1W TRANSISTOR 8008-6 8MOB15

    Untitled

    Abstract: No abstract text available
    Text: i 86D 0 1 7 9 0 T - 33 -1 BLX69A N AUER PHILIPS/DISCRETE QbE D bb53ci31 0014036 4 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 13,5 V , The transistor is resistance stabilized and is


    OCR Scan     		PDF BLX69A bb53c bb53131

    thomson rf transistor

    Abstract: thomson microwave transistor sd1013
    Text: 1 S G S-¡-THOMSON DSC D | TTETEB? Q O D Q ltiE r T- 5 ? ' 0 . 7 SOLID STATE MICROWAVE SD1013 THOMSON-CSF COMPONENTS CORPORATION Montgomery ville, PA 18936 • 215 362-8500 ■ TW X 510-661-7299 10 W, 28 V VHF POWER TRANSISTOR DESCRIPTION SSM device type SD1013 is an epitaxial silicon NPN-planar transistor


    OCR Scan     		PDF SD1013 SD1013 thomson rf transistor thomson microwave transistor

    RX1011B350Y

    Abstract: broad-band Microwave Class-C Transistor Amplifiers
    Text: N AMER P H I L I P S / D I S C R E T E bbSB^l ObE D 0 0 1 5 1 7 ^ fi D EVELOPM EN T DATA RX1011B350Y T h is data sheet contains advance inform ation and specifications are subject to change w ith out notice. r-f 33-/S" PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in common-base, class-C


    OCR Scan     		PDF RX1011B350Y T-33- 7Z23071 RX1011B350Y broad-band Microwave Class-C Transistor Amplifiers

    mouse Phototransistor

    Abstract: BA0B WPT-352PM
    Text: Waitrony Photo Transistor M odule No.: W PT-352PM 1. G eneral Description: D im ensions The WPT-352PM is a high sensitivity NPN silicon photo­ transistor with 2-phase output, which is mounted in a compact black epoxy package. 1. EMITTER P T R B 2. COLLECTOR (COM)


    OCR Scan     		PDF WPT-352PM WPT-352PM mouse Phototransistor BA0B