TRANSISTOR D 716 Search Results

TRANSISTOR D 716 Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR D 716 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BUX20 Abstract: bux 716 transistor BUX Text: *B U X 2 0 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILICIUM NPN. TRIPLE DIFFUSE Preferred device D is p o s itif re c o m m a n d é High speed, high current, high power transistor Transistor de puissance rapide, fo rt courant Thermal fatigue inspection	OCR Scan	BUX20 CB-159 BUX20 bux 716 transistor BUX	PDF
tip122 tip127 audio amp schematic Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.	Original	DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier	PDF
Untitled Abstract: No abstract text available Text: P h ilip ^ e m ic o n d u c to r^ ^ ^ • b b 5 3 T 31 Q0 3 1 b b 5 1ST H i APX Product specification NPN 6.5 GHz wideband transistor ^ — DESCRIPTION BFQ135 N AMER PHILIPS/DISCRETE bTE D PINNING NPN transistor in a 4-lead dual-emitter SOT172A1 envelope with a ceramic cap. All leads are	OCR Scan	BFQ135 OT172A1	PDF
BUX40 Abstract: No abstract text available Text: rz 7 ^ 7 # SCS-THOMSON it m D ÏÏM K S B U X 40 HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR DESCRIPTIO N The BUX40 is a silicon multiepitaxial planar NPN transistor in Jedec TO-3 metal case, intented for use in switching and linear applications in military e	OCR Scan	BUX40 120ration	PDF
Transistor BFr 99 Abstract: Transistor BFR 96 TFC 718 S tfc 718 BFR34A Transistor BFR 38 TRANSISTOR 2SC 169 6620 bfr34 2N6620 Text: ÍSIEû ESC D • fl235bDS QQQMb70 2 NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers ^ _ _ BFR34A 2 N 6620 SIEMENS AKTIEN6ESELLSCHAF BFR 34 A is an epitaxial NPN silicon planar RF transistor in a plastic package similar to TO 119 50 B 3 DIN 41 867 intended for use in RF amplifiers up to the GHz range,	OCR Scan	fl235bDS 2N6620. Q62702-F346-S1 Q68000-A4668 fl23Sfc 0004fc BFR34A 200MHz Transistor BFr 99 Transistor BFR 96 TFC 718 S tfc 718 BFR34A Transistor BFR 38 TRANSISTOR 2SC 169 6620 bfr34 2N6620	PDF
CT 1975 sam Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the	OCR Scan	2SC4570 2SC4570-T1 CT 1975 sam transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking	PDF
Transistor BFR 96 Abstract: 2SC 930 AF transistor 2Sc 2053 Transistor BFR34a Transistor BFr 99 BFR34A Text: SS C D • fl235bD S QQQMb70 ÍS I E û 2 BFR34A 2 N 6620 NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers ^ _ _ -/s' SIEMENS A K T I E N 6 E S E LLS CH AF BFR 34 A is an epitaxial NPN silicon planar RF transistor in a plastic package similar	OCR Scan	fl235bD QQQMb70 BFR34A 2N6620. Q62702-F346-S1 Q68000-A4668 0Q0Mb73 Transistor BFR 96 2SC 930 AF transistor 2Sc 2053 Transistor BFR34a Transistor BFr 99	PDF
CA3600E Abstract: RCA-CA3600E CA3600 RCA-CA3080 rca CA3080 TRANSISTOR N2 TA6368 CA3046 pnp array RCA ca3600 RCA COS/MOS Integrated Circuits Manual Text: G E SOLID STATE D I D È I 3Ô7SDÛ1 0G14ti57 i \| ^ ^ 3 ^ 3 :_ Arrays CA3600 CM O S Transistor Array For Linear Circuit Applications Features: • High in p u t resistance.1 0 0 G f i t y p .	OCR Scan	CA3600 CA3600E RCA-CA3600E CA3600 RCA-CA3080 rca CA3080 TRANSISTOR N2 TA6368 CA3046 pnp array RCA ca3600 RCA COS/MOS Integrated Circuits Manual	PDF
12v DC led liting circuits Abstract: 100-C BUK100-50DL T0220AB Text: N AMER P H I L I P S / D I S C R E T E bTE D • bbSBTai 003035^ 5ÔÔ ■ APX P ro d u ct S p e c ific a tio n Philips Semiconductors BUK100-50DL PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power	OCR Scan	BUK100-50DL -ID/100 sc/lISo25-C SL/IISL25-C 12v DC led liting circuits 100-C BUK100-50DL T0220AB	PDF
TRANSISTOR D 2627 Abstract: D 4206 TRANSISTOR BFQ135 transistor 224-1 base collector emitter DIN45004B bfq135 scattering 1817 transistor 1348 transistor TRANSISTOR C 2570 c 2570 transistor Text: P hilip^Sem iconductor^^^^ I I bbS 3 cJ3 1 0 0 3 1 Li Li 5 1 5 'J H i APX Product specification NPN 6.5 GHz wideband transistor BFQ135 N DESCRIPTION AMER P H IL IP S /D IS C R E T E bTE PINNING NPN transistor in a 4-lead dual-emitter SOT172A1 envelope with a ceramic cap. All leads are	OCR Scan	BFQ135 OT172A1 OT172A1. SYMB69 TRANSISTOR D 2627 D 4206 TRANSISTOR BFQ135 transistor 224-1 base collector emitter DIN45004B bfq135 scattering 1817 transistor 1348 transistor TRANSISTOR C 2570 c 2570 transistor	PDF
MOTOROLA POWER TRANSISTOR lc 945 Abstract: zener ap 474 940 629 MOTOROLA 113 Text: MOTOROLA O rder this docum ent by M RF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N-Channel Enhancement Mode D esigned fo r w id e b a n d la rg e -s ig n a l am p lifie r and o scilla to r ap plicatio ns to 500 MHz.	OCR Scan	RF158/D MOTOROLA POWER TRANSISTOR lc 945 zener ap 474 940 629 MOTOROLA 113	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MTSF2P03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTSF2P03HD Medium Power Surface Mount Products TMOS Single P-Channel Field Effect Transistor Motorola Preferred Device Micro8 devices are an advanced series of power MOSFETs	Original	MTSF2P03HD/D MTSF2P03HD MTSF2P03HD/D*	PDF
940 629 MOTOROLA 113 Abstract: Nippon capacitors Text: MOTOROLA Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance	Original	MRF158/D MRF158 940 629 MOTOROLA 113 Nippon capacitors	PDF
buz102 Abstract: No abstract text available Text: SIEMENS BUZ 102 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/d/ rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 Pin 2 Type Vbs BUZ102 50 V b 42 A Pin 3 D G S ^DS on	OCR Scan	O-220 BUZ102 C67078-S1351-A2 fl23Sb05 023Sfc 35bQ5 00fl45b buz102	PDF

SOT429 Abstract: No abstract text available Text: Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor FEATURES SYMBOL PSMN003-25W QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 25 V	Original	PSMN003-25W OT429 PSMN003-25W SOT429	PDF
transistor NEC D 587 Abstract: LS 1691 BM UPA802T l 9143 NEC D 587 Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD T he/xP A 802T has b u ilt-in 2 1o w -v o It age tra n s is to rs w h ic h are d e sig ne d PACKAGE DRAWINGS	OCR Scan	uPA802T 2SC4227) transistor NEC D 587 LS 1691 BM l 9143 NEC D 587	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR ¿¿PA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD The ¿¡PA802T has b u ilt-in 2 lo w -v o lta g e tra n s is to rs w h ic h are d e sig n e d PACKAGE DRAWINGS	OCR Scan	PA802T PA802T 2SC4227) /IPA802T	PDF
logos 4012B Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485 Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX	OCR Scan	TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485	PDF
Untitled Abstract: No abstract text available Text: N A PIER PHILIPS/DISCRETE bRE D bbSBRBl ODBQBE^ 566 H A P X P roduct S pecification Philips Semiconductors BUK100-50DL PowerMOS transistor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic	OCR Scan	BUK100-50DL QQ3Q33b	PDF
ALC 655 Abstract: ALC 665 ALC 887 MRF158 VK200 Text: Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance	Original	MRF158/D MRF158 ALC 655 ALC 665 ALC 887 MRF158 VK200	PDF
2SK2235 Abstract: DDS3400 44t transistor DDS34 Text: TOSHIBA TDTTSSO DDS 3 4 0 0 TOSHIBA FIELD EFFECT TRANSISTOR 2SK2235 35b SILICON N CHANNEL MOS TYPE tt-M OSIII 5 2SK2235 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AN D MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm	OCR Scan	DDS3400 2SK2235 300juA 20kfi) O-22QAB O-220 50URCE O-220FL 00E3b43 44t transistor DDS34	PDF
940 629 MOTOROLA 220 Abstract: MOTOROLA POWER 726 MOS FET TRANSISTOR MRF158 VK200 20WATTS Text: MOTOROLA Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance	Original	MRF158/D MRF158 940 629 MOTOROLA 220 MOTOROLA POWER 726 MOS FET TRANSISTOR MRF158 VK200 20WATTS	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR ¿¿PA803T NPN SILICON EPITAXIALTRANSISTO R WITH BUILT-IN 2 ELEMENTS M INI MOLD ¿¡PA803T has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r UHF. PACKAGE DRAWINGS (U n it: m m ) FEATURES •	OCR Scan	PA803T PA803T 2SC4570) uPA803T	PDF
613 GB 123 CT Abstract: transistor NEC D 587 Ic D 1708 ag 513 gb 173 ct MPA80 nec d 882 p transistor ic nec 2051 transistor NEC D 882 p NEC 2561 h NEC 2561 de Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA803T NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD /xPA803T has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r UHF. PACKAGE DRAW INGS (U n it: m m ) FEATURES • H igh fT	OCR Scan	uPA803T /xPA803T 2SC4570) 613 GB 123 CT transistor NEC D 587 Ic D 1708 ag 513 gb 173 ct MPA80 nec d 882 p transistor ic nec 2051 transistor NEC D 882 p NEC 2561 h NEC 2561 de	PDF

TRANSISTOR D 716 Search Results

TRANSISTOR D 716 Result Highlights (5)

TRANSISTOR D 716 Datasheets Context Search

BUX20

tip122 tip127 audio amp schematic

Untitled

BUX40

Transistor BFr 99

CT 1975 sam

Transistor BFR 96

CA3600E

12v DC led liting circuits

TRANSISTOR D 2627

MOTOROLA POWER TRANSISTOR lc 945

Untitled

940 629 MOTOROLA 113

buz102

SOT429

transistor NEC D 587

Untitled

logos 4012B

Untitled

ALC 655

2SK2235

940 629 MOTOROLA 220

Untitled

613 GB 123 CT