Untitled
Abstract: No abstract text available
Text: TO -24 7 BYV74W-400 Dual ultrafast power diode 16 July 2013 Product data sheet 1. General description Dual ultrafast power diode in a SOT429 3-lead TO-247 plastic package. 2. Features and benefits • • • • • Very low on-state loss Fast switching
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BYV74W-400
OT429
O-247)
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BYV72EW-200
Abstract: No abstract text available
Text: TO -24 7 BYV72EW-200 Dual ultrafast power diode 16 July 2013 Product data sheet 1. General description Dual ultrafast power diode in a SOT429 3-lead TO-247 plastic package. 2. Features and benefits • • • • • • Very low on-state loss Fast switching
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PDF
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BYV72EW-200
OT429
O-247)
BYV72EW-200
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Untitled
Abstract: No abstract text available
Text: TO -24 7 BYV415W-600P Dual ultrafast power diode 26 August 2014 Product data sheet 1. General description Dual ultrafast power diode in a SOT429 3-lead TO-247 plastic package. 2. Features and benefits • • • • Very low on-state loss Fast switching
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Original
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PDF
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BYV415W-600P
OT429
O-247)
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BYV72EW-200
Abstract: No abstract text available
Text: TO -24 7 BYV72EW-200 Dual ultrafast power diode 24 July 2013 Product data sheet 1. General description Dual ultrafast power diode in a SOT429 3-lead TO-247 plastic package. 2. Features and benefits • • • • • • Very low on-state loss Fast switching
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PDF
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BYV72EW-200
OT429
O-247)
BYV72EW-200
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power diode
Abstract: Power Diodes Diodes diode schottky 600v high power diode axial power diode package BYD1100 BYM99 BYV1100 BYV2100
Text: Philips Semiconductors Power Diodes New Products Philips Semiconductors is working intensively to bring new Power Diode products to the market. These are the products and technologies which appear for the first time in this data handbook:- schottky and ultrafast epitaxial rectifiers in the SOT429
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OT429
BYV1100,
BYD1100,
BYV2100,
BYV4100,
BYV99,
BYM99,
BYG85B,
BYC10B)
BYQ40E,
power diode
Power Diodes
Diodes
diode schottky 600v
high power diode axial
power diode package
BYD1100
BYM99
BYV1100
BYV2100
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SOT429
Abstract: No abstract text available
Text: Package outline Philips Semiconductors Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247 SOT429 A E A1 P q D L1 Q L 1 2 3 b2 c b1 b e e 10 20 mm scale DIMENSIONS mm are the original dimensions UNIT A A1 b b1 b2 c
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O-247
OT429
SOT429
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Untitled
Abstract: No abstract text available
Text: TO -24 7 BYC30WT-600P Hyperfast power diode 10 February 2014 Product data sheet 1. General description Hyperfast power diode in a SOT429 3-lead TO247 plastic package. 2. Features and benefits • • • • Low leakage current Low thermal resistance Low reverse recovery current
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BYC30WT-600P
OT429
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Power Bipolar Transistors
Abstract: SOT430 transistors A1 757 sot199 to220 5 lead plastic
Text: PACKAGE OUTLINES SOT78 TO-220AB SOT82 SOT186(TO-220) SOT186A (Isolated TO-220AB) SOT199 SOT399 (TOP3D) SOT429 (TO-247) SOT430 (TOP3L) Page 754 755 756 757 758 759 760 761 Philips Semiconductors Power Bipolar Transistors Package outlines Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
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O-220AB)
OT186
O-220)
OT186A
OT199
OT399
OT429
O-247)
OT430
Power Bipolar Transistors
SOT430
transistors A1 757
sot199
to220 5 lead plastic
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Untitled
Abstract: No abstract text available
Text: Package outline Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247 SOT429 E A ø A1 p P2 D2 q E2 D D1 E3 E1 L1 Q b1 b2 L b e c 20 mm scale Dimensions mm are the original dimensions Unit(1) A A1 b b1 b2 c D D1 D2 E
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O-247
OT429
sot429
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BUT11APX equivalent
Abstract: BUT11A1 equivalent BU2725DX BU2527 BU506D, BU1506DX, BU2506DF BUT11APX BU4522AX BU2506DF equivalent bu2520dx BU2527DX
Text: DISCRETE SEMICONDUCTORS Selection guide Power Bipolar Transistors 1998 Dec 16 SOT82 SOT78 TO220AB SOT186 BU505 BU505D BU505F BU505DF BU506 BU506D BU506F BU506DF SOT186A (isolated TO220AB) SOT199 SOT399 (TOP3D) SOT429 (TO247) SOT430 (TOP3L) TYPICAL APPLICATIONS
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O220AB)
OT186
BU505
BU505D
OT199
OT399
OT429
OT430
BU505F
BU505DF
BUT11APX equivalent
BUT11A1
equivalent BU2725DX
BU2527
BU506D, BU1506DX, BU2506DF
BUT11APX
BU4522AX
BU2506DF equivalent
bu2520dx
BU2527DX
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SOT429
Abstract: No abstract text available
Text: PDF: 1999 Aug 05 Philips Semiconductors Package outline Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247 SOT429 α E P A A1 β q S R D Y L1 1 Q b2 L 1 2 3 c w M b b1 e e 10 20 mm scale DIMENSIONS (mm are the original dimensions)
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O-247
OT429
SOT429
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BUT11APX equivalent
Abstract: diode BY229 BUT11APX BU4508DX plasma tv ic BU2720DX BUT11APX-1200 BU4507DX BU4508DX equivalent BU2520DF
Text: Bipolar power diodes and transistors for TV Understanding PFC - TV applications What is Power Factor Correction PFC Ñ It can be defined as the reduction of the harmonic content, and/or the aligning of the phase angle of incoming current Ñ PFC is required to reduce disturbance on the AC distribution
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bra785
IEC1000-3-2/EN61000-3-2
80plus
JICC61000-3-2
BUT11APX equivalent
diode BY229
BUT11APX
BU4508DX
plasma tv ic
BU2720DX
BUT11APX-1200
BU4507DX
BU4508DX equivalent
BU2520DF
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FREDFET
Abstract: PHP6N60 BUK457-500B PHB8ND50E PHP8N50 PHP8ND50E PHW8ND50E
Text: Philips Semiconductors Product specification PowerMOS transistors PHP8ND50E, PHB8ND50E, PHW8ND50E FREDFET, Avalanche energy rated FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance
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PHP8ND50E,
PHB8ND50E,
PHW8ND50E
FREDFET
PHP6N60
BUK457-500B
PHB8ND50E
PHP8N50
PHP8ND50E
PHW8ND50E
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PHB13N40E
Abstract: PHP13N40E PHW13N40E
Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP13N40E, PHB13N40E, PHW13N40E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance
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PHP13N40E,
PHB13N40E,
PHW13N40E
PHP13N40E
O220AB)
PHW13N4n
PHB13N40E
PHW13N40E
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|
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BUK436-800A
Abstract: BUK436-800B BUK456-800A
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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OT429
BUK436W-800A/B
BUK436
-800A
-800B
BUK436-800A
BUK436-800B
BUK456-800A
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon diffused power transistors BUW13W; BUW13AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. APPLICATIONS • Converters • Inverters • Switching regulators
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OCR Scan
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PDF
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OT429
BUW13W;
BUW13AW
BUW13W
BUW13AW
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BUT11A1
Abstract: Power Bipolar Transistors bu2708dx BU2725DX BU1508AX BU4506AX BU2532 BU4506AF BU2720DX BU2527
Text: LEADED PACKAGES VcESM V 1500 tf lc lc (DC) sat. max. (A) 2.5 (A) 2 fas) 0.9 S0T82 S0T78 (T0220AB) S0T186A S0T186 (isolated S0T199 T0220AB) BU505 BU505D BU505F BU505DF BU506 BU506D BU506F BU506DF S0T399 (TOP3D) SOT429 (T0247) SOT430 (TOP3L) TYPICAL APPLICATIONS
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PDF
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S0T82
S0T78
T0220AB)
BU505
BU505D
BU506
BU506D
S0T186A
S0T186
BU505F
BUT11A1
Power Bipolar Transistors
bu2708dx
BU2725DX
BU1508AX
BU4506AX
BU2532
BU4506AF
BU2720DX
BU2527
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Untitled
Abstract: No abstract text available
Text: MOUNTING AND SOLDERING INSTRUCTIONS page TO126/SOT82 768 SOT186/A; SOT78 T0220AB 772 SOT199/SOT429 (TC>247)/SOT339 (TOP3D) 776 Philips Semiconductors Power Bipolar Transistors Mounting and Soldering GENERAL DATA AND INSTRUCTIONS FOR T0126/S0T82 When the driven nut or screw is in direct contact with a
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OCR Scan
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PDF
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O126/SOT82
OT186/A;
T0220AB)
OT199/SOT429
/SOT339
T0126/S0T82
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Power Bipolar Transistors
Abstract: No abstract text available
Text: PACKAGE OUTLINES Page SOT78 T0-220AB SOT82 SOT186(10-220) S O U 86A (Isolated TO-220AB) SOT199 SOT399 (TOP3D) 754 755 756 757 758 759 SOT429 (TO-247) SOT43Q (TOP3L) 760 761 Philips Semiconductors Power Bipolar Transistors Package outlines Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-22QAB
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OCR Scan
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PDF
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T0-220AB)
OT186
O-220AB)
OT199
OT399
OT429
O-247)
OT43Q
O-22QAB
O-247
Power Bipolar Transistors
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12aw
Abstract: transistor C 548 B Philips b872 BUW12A transistor vc 548
Text: Philips Semiconductors Product specification Silicon diffused power transistors BUW12W; BUW12AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. APPLICATIONS • Converters • Inverters • Switching regulators
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OCR Scan
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PDF
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OT429
BUW12W;
BUW12AW
OT429)
BUW12W
BUW12AW
12aw
transistor C 548 B Philips
b872
BUW12A
transistor vc 548
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PHW7N60
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor PINNING - SOT429 T0247 PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance Id F*tol RdS(ON) PIN CONFIGURATION MAX. UNIT 600 7 147 1.2
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OCR Scan
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PDF
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PHW7N60
OT429
T0247)
PHW7N60
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Philips FA 153
Abstract: No abstract text available
Text: PACKAGE OUTLINES Page SOT78 TO-220AB 602 SOT82 603 SOT93B 604 SOT 186 605 SOT186A 606 SOT 199 607 SOT399 608 SOT429 609 SOT430 610 Philips Semiconductors High-voltage and Switching NPN Power Transistors Packa9e ouMines Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead T0-220AB
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OCR Scan
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PDF
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O-220AB)
OT93B
OT186A
OT399
OT429
OT430
T0-220AB
O-220AB
O-247
Philips FA 153
|
Untitled
Abstract: No abstract text available
Text: MOUNTING INSTRUCTIONS page TO126/SOT82 616 SOT186/A; T0220AB 620 SOT199/SOT429/TOP3D 624 Philips Semiconductors Mounting Instructions T0126/S0T82 GENERAL DATA AND INSTRUCTIONS General rules 1. Fasten the device to the heatsink before soldering the leads. 2. Avoid stress to the leads.
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OCR Scan
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PDF
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O126/SOT82
OT186/A;
T0220AB
OT199/SOT429/TOP3D
T0126/S0T82
199/SOT429/TOP3D
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon diffused power transistors BUW11W; BUW11 AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. o APPLICATIONS _ o • Converters • Inverters • Switching regulators
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OCR Scan
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PDF
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OT429
BUW11W;
BUW11
OT429)
BUW11W
BUW11AW
|
