TRANSISTOR D 588 Search Results

TRANSISTOR D 588 Result Highlights (6)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB

TRANSISTOR D 588 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz	Original	PDF	TL1466I SLVS262
tip122 tip127 audio amp schematic Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.	Original	PDF	DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Untitled Abstract: No abstract text available Text: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz	Original	PDF	TL1466I SLVS262
MS-026 Abstract: TL1466I TL1466IPM TL1466IPMR TL1466IPMRG4 Text: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz	Original	PDF	TL1466I SLVS262 TL1466I MS-026 TL1466IPM TL1466IPMR TL1466IPMRG4
Untitled Abstract: No abstract text available Text: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz	Original	PDF	TL1466I SLVS262
audio output TRANSISTOR PNP Abstract: TL1466I TL1466IPM TL1466IPMR TL1466IPMRG4 MS-026 Text: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz	Original	PDF	TL1466I SLVS262 TL1466I audio output TRANSISTOR PNP TL1466IPM TL1466IPMR TL1466IPMRG4 MS-026
TRANSISTOR D 1785 Abstract: audio output TRANSISTOR PNP MS-026 TL1466I TL1466IPM Text: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz	Original	PDF	TL1466I SLVS262 TL1466I TRANSISTOR D 1785 audio output TRANSISTOR PNP MS-026 TL1466IPM
Untitled Abstract: No abstract text available Text: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz	Original	PDF	TL1466I SLVS262
MS-026 Abstract: TL1466I TL1466IPM TL1466IPMR TL1466IPMRG4 Text: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz	Original	PDF	TL1466I SLVS262 TL1466I MS-026 TL1466IPM TL1466IPMR TL1466IPMRG4
audio output TRANSISTOR PNP Abstract: MS-026 TL1466I TL1466IPM TL1466IPMR Text: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz	Original	PDF	TL1466I SLVS262 TL1466I audio output TRANSISTOR PNP MS-026 TL1466IPM TL1466IPMR
Untitled Abstract: No abstract text available Text: TL1466I HIGHĆSPEED/PRECISION SIX CHANNEL SWITCHING REGULATOR CONTROLLER SLVS262 − FEBRUARY 2000 D High-Speed Output Circuit to Drive PNP D D D D D D D D D Power Transistor Precision Reference Voltage . . . 1.5 V ±2% at TA = 25°C Oscillator Frequency . . . 50 kHz to 0.8 MHz	Original	PDF	TL1466I SLVS262
motorola 6810 Abstract: MJ 6810 MGY40N60 Text: MOTOROLA Order this document by MGY40N60/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGY40N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced	Original	PDF	MGY40N60/D MGY40N60 motorola 6810 MJ 6810 MGY40N60
MGY40N60 Abstract: motorola 6810 Text: MOTOROLA Order this document by MGY40N60/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGY40N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced	Original	PDF	MGY40N60/D MGY40N60 MGY40N60 motorola 6810
MJ 6810 Abstract: motorola 6810 J 6810 D MGY40N60 TRANSISTOR J 6810 Text: MOTOROLA Order this document by MGY40N60/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGY40N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced	Original	PDF	MGY40N60/D MGY40N60 MGY40N60/D* MJ 6810 motorola 6810 J 6810 D MGY40N60 TRANSISTOR J 6810

BST72A Abstract: No abstract text available Text: BST72A JV _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use in telephone ringer circuits and for application with relay, high-speed and line-transformer drivers.	OCR Scan	PDF	BST72A
BUK657-500B Abstract: fet N-Channel transistor 250V DS Transistor TL 31 AC Text: N AMER PHILIPS/DISCRETE hTE D ^53^31 0030AT0 Efll • APX Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.	OCR Scan	PDF	0030AT0 BUK657-500B t0220ab fet N-Channel transistor 250V DS Transistor TL 31 AC
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	PDF	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
BUK657-500B Abstract: T0220AB transistor D 587 Text: N AMER PHILIPS/DISCRETE hTE D • ^53*131 00308^0 ESI « A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a	OCR Scan	PDF	BUK657-500B T0220AB transistor D 587
Untitled Abstract: No abstract text available Text: bRE D N AflER P H I L I P S / D I S C R E T E m bb53R31 QQ30fl^0 P h ilip s S e m ic o n d u c to rs P ro d u c t S p e c ific a tio n Pow erM O S transistor Fast recovery diode F E T GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a	OCR Scan	PDF	bb53R31 QQ30fl O220AB BUK657-500B bbS3T31 Q030flT4
BFT25 Abstract: bft25 transistor Text: N AMER P H I L I P S / D I S C R E T E ^53^31 o o ia is i b 'l BSE D J BFT25 T - 3 I -\|7 N-P-N H.F. WIDEBAND TRANSISTOR N-P-N transistor in a plastic SOT-23 envelope, primarily intended for use in u.h.f. low power amplifiers in thick and thin-film circuits, such as in pocket phones, paging systems, etc. The transistor features	OCR Scan	PDF	BFT25 OT-23 7ZS76S4 Z67656 BFT25 bft25 transistor
2SC5012-T1 Abstract: No abstract text available Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •	OCR Scan	PDF	2SC5012 2SC5012-T1 2SC5012-T2 2SC5012-T1
613 GB 123 CT Abstract: No abstract text available Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The /xPA812T has built-in 2 low-voltage transistors which are designed to PACKAGE D R A W IN G S	OCR Scan	PDF	uPA812T 2SC4227) /xPA812T 613 GB 123 CT
BUY89 Abstract: No abstract text available Text: N AflER PHILIPS/DISCRETE SSE D bt.s3T3i o o m a s t BUY89 J V T*-3 3 -1 3 SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching npn transistor in a TO-3 envelope especially intended for use in A C motor control systems from three-phase mains.	OCR Scan	PDF	BUY89 bfaS3131 BUY89
2N3214 Abstract: TO37 2N2283 2N2282 TO13 diode e 2060 MT28 2n1755 2N1043 2N1044 Text: DIODE TRANSISTOR CO INC "ai 28483 52 DIODE T R A N S I S T O R CO INC DE~\|efli\|fl35E O O D D i n 0 I " 84D 00119 D T- J 5- o7 D1QDE TPidf\15J5TQPi CO., INC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201*575-5883	OCR Scan	PDF	afl4fl352 DDD0111 TMI\I515T0R Tc-25Â 2N2668 2N2669 2N2670 2N1042 2N1043 MT-27 2N3214 TO37 2N2283 2N2282 TO13 diode e 2060 MT28 2n1755 2N1044

TRANSISTOR D 588 Search Results

TRANSISTOR D 588 Result Highlights (6)

TRANSISTOR D 588 Datasheets Context Search

Untitled

tip122 tip127 audio amp schematic

Untitled

MS-026

Untitled

audio output TRANSISTOR PNP

TRANSISTOR D 1785

Untitled

MS-026

audio output TRANSISTOR PNP

Untitled

motorola 6810

MGY40N60

MJ 6810

BST72A

BUK657-500B

2N2222A 338

BUK657-500B

Untitled

BFT25

2SC5012-T1

613 GB 123 CT

BUY89

2N3214