TRANSISTOR D 586 Search Results

TRANSISTOR D 586 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR D 586 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
ULN2003A application Abstract: relay driver ULN2003A ULN2003AD ULN2003A ULQ2003A uln buffer ULN2003AJ ULN2003ANS Text: ULN2001A, ULN2002A, ULN2003A, ULN2004A, ULQ2003A, ULQ2004A, HIGH-VOLTAGE HIGH-CURRENT DARLINGTON The ULN2001A is obsolete TRANSISTOR ARRAY and is no longer supplied. SLRS027D – DECEMBER 1976 – REVISED JULY 2002 D D D D D D D ULN2001A . . . D OR N PACKAGE	Original	ULN2001A, ULN2002A, ULN2003A, ULN2004A, ULQ2003A, ULQ2004A, ULN2001A SLRS027D 500-mA ULN2003A application relay driver ULN2003A ULN2003AD ULN2003A ULQ2003A uln buffer ULN2003AJ ULN2003ANS	PDF
tip122 tip127 audio amp schematic Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.	Original	DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier	PDF
Untitled Abstract: No abstract text available Text: SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023B – DECEMBER 1976 – REVISED SEPTEMBER 1995 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS • D OR N PACKAGE TOP VIEW 500-mA Rated Collector Current (Single Output) High-Voltage Outputs . . . 100 V	Original	SN75468, SN75469 SLRS023B 500-mA ULN2003A ULN2004A, SN75468 SN75468D SN75468N	PDF
ua723cn Abstract: fairchild ua723 UA723C UA723 uA723 application note UA723 fairchild Text: µA723 PRECISION VOLTAGE REGULATORS SLVS057D – AUGUST 1972 – REVISED JULY 1999 D D D D D D OR N PACKAGE TOP VIEW 150-mA Load Current Without External Power Transistor Adjustable Current-Limiting Capability Input Voltages up to 40 V Output Adjustable From 2 V to 37 V	Original	SLVS057D 150-mA A723C UA723CDR UA723CJ UA723CN UA723CNSR ua723cn fairchild ua723 UA723C UA723 uA723 application note UA723 fairchild	PDF
CEM8435A Abstract: No abstract text available Text: CEM8435A March 1998 P-Channel Enhancement Mode Field Effect Transistor FEATURES 5 -30V , -7.9A , RDS ON =24mΩ @VGS=-10V. RDS(ON)=40m Ω @VGS=-4.5V. D D D D 8 7 6 5 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.	Original	CEM8435A CEM8435A	PDF
BST72A Abstract: No abstract text available Text: BST72A JV _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use in telephone ringer circuits and for application with relay, high-speed and line-transformer drivers.	OCR Scan	BST72A	PDF
BST110 Abstract: P-channel max 083 Text: 711002b GObVTMB 1Ô3 IPH IN BST110 P-CHANNEL ENCHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in TO-92 variant envelope and intended fo r use in relay, high-speed and line-transformer drivers. Features • • • • Very low RpSon	OCR Scan	711002b BST110 200mA BST110 P-channel max 083	PDF
GSO 69 Abstract: No abstract text available Text: bbSB^ai 0023^74 6RD * A P X N AMER PHILIPS/ DISCRE TE b?E ]> BST110 yv P-CHANNEL ENCHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in TO-92 variant envelope and intended fo r use in relay, high-speed and line-transformer drivers.	OCR Scan	BST110 DS3c17b GSO 69	PDF
K1 transistor Abstract: pnp vhf transistor Text: 25C D • 523SbQS QDQMS3‘i 4 WiSIZG f PNP Silicon Planar Transistor ' SIEMENS AKTIEN6ESELLSCHAF >39 BF767 0- BF 767 is a PNP silicon planar transistor including passivated surface in TO 236 plastic package 23 A 3 DIN 41869 . The transistor is particularly suitable for use in low-noise,	OCR Scan	523SbQS BF767 Q62702-F553 K1 transistor pnp vhf transistor	PDF
727 Transistor power values Abstract: BST110 transistor wz Text: • bbSB^ai OGSa'iTM fi'îO « A P X N AMER PHILIPS/DISCRETE BST110 b?E T> P-CHANNEL ENCHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in TO-92 variant envelope and intended fo r use in relay, high-speed and line-transformer drivers.	OCR Scan	BST110 200mA TZ22045 727 Transistor power values BST110 transistor wz	PDF
BUK657-500B Abstract: fet N-Channel transistor 250V DS Transistor TL 31 AC Text: N AMER PHILIPS/DISCRETE hTE D ^53^31 0030AT0 Efll • APX Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.	OCR Scan	0030AT0 BUK657-500B t0220ab fet N-Channel transistor 250V DS Transistor TL 31 AC	PDF
nf950 Abstract: transistor BF 37 transistor BF 236 TRANSISTOR 2SC 950 TRANSISTOR JC 539 2sc 1948 a Q62702-F553 transistor code mark NF Text: 25C D • 523SbQS QQQMS3‘i 4 Wi SI ZG f PNP Silicon Planar Transistor ' SIEMENS AKTIEN6ESELLSCHAF >39 BF767 0- BF 767 is a PNP silicon planar transistor including passivated surface in TO 2 36 plastic package 23 A 3 DIN 41869 . The transistor is particularly suitable for use in low-noise,	OCR Scan	023SbQS Q62702-F553 nf950 transistor BF 37 transistor BF 236 TRANSISTOR 2SC 950 TRANSISTOR JC 539 2sc 1948 a Q62702-F553 transistor code mark NF	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
BUK657-500B Abstract: T0220AB transistor D 587 Text: N AMER PHILIPS/DISCRETE hTE D • ^53*131 00308^0 ESI « A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a	OCR Scan	BUK657-500B T0220AB transistor D 587	PDF

BFT25 Abstract: bft25 transistor Text: N AMER P H I L I P S / D I S C R E T E ^53^31 o o ia is i b 'l BSE D J BFT25 T - 3 I -\|7 N-P-N H.F. WIDEBAND TRANSISTOR N-P-N transistor in a plastic SOT-23 envelope, primarily intended for use in u.h.f. low power amplifiers in thick and thin-film circuits, such as in pocket phones, paging systems, etc. The transistor features	OCR Scan	BFT25 OT-23 7ZS76S4 Z67656 BFT25 bft25 transistor	PDF
2SC5012-T1 Abstract: No abstract text available Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •	OCR Scan	2SC5012 2SC5012-T1 2SC5012-T2 2SC5012-T1	PDF
2N4400 Abstract: MPS3705 ic hp samsung transistor D 586 Text: {SAMSUNG SEMICON DUC TO R INC MPS3705 14E D \| 7 ^ 4 1 4 5 00Q731fc, 7 \| NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: Vceo=30V • Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic	OCR Scan	000731b MPS3705 625mW -55M50' 2N4400 T-29-21 100/iA, 50tnA, 100mA, ic hp samsung transistor D 586	PDF
2N4211 Abstract: 2N5872 2N1936 2N1937 2N3265 2N3266 2N3597 2N3598 2N3599 2N4210 Text: ”04 e-C g4Wæ~DlODE T R A M S ïS T O R C O DE \|Efl4fl3S2 0 D 0 D 1 3 0 T INC 64 D 00 1 3 0 ~ D T-33-13 ~ D1QDE TRANSISTOR CQ.,1 \IC. (201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-575-5863 NPNTO-63 PNP	OCR Scan	0D0D130 T-33-13 mDDETMI\l515TDRCCLiniC. NPNTO-63 2N1936 2N1937 2N3265 2N3266 2N3597 2N6246 2N4211 2N5872 2N1936 2N1937 2N3265 2N3266 2N3597 2N3598 2N3599 2N4210	PDF
BUY89 Abstract: No abstract text available Text: N AflER PHILIPS/DISCRETE SSE D bt.s3T3i o o m a s t BUY89 J V T*-3 3 -1 3 SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching npn transistor in a TO-3 envelope especially intended for use in A C motor control systems from three-phase mains.	OCR Scan	BUY89 bfaS3131 BUY89	PDF
BFP96 Abstract: BFQ32C Text: Product specification Philips Semiconductors 'P3/'23 PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE D BFQ32C 7 1 1 0 0 2 b 0 0 4 5 4 2 4 03b • P H I N PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT 173 and SOT 173X	OCR Scan	BFP96. BFQ32C BFP96 BFQ32C	PDF
2SC 968 NPN Transistor Abstract: No abstract text available Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 0 7 is an NPN e p ita x ia l silico n tra n s is to r d e s ig n e d fo r use in lo w no ise and sm a ll sig n a l a m p lifie rs from	OCR Scan	2SC5007 2SC 968 NPN Transistor	PDF
CT 1975 sam Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the	OCR Scan	2SC4570 2SC4570-T1 CT 1975 sam transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking	PDF
2N5048 Abstract: 2N4301 2N5049 2N5218 2N5313 2N5315 2N5387 2N5388 2N5542 2N5959 Text: ^4 ^TRANSISTOR CO DE J a ñ M ñ 3 S E INC D D O O I E 11] S 84D 00129 D10DETRdf\l515T0R TO., INC. 201 686-0400 • Telex: 139-335 • Outside N Y & NJ area call T O LL FREE 600-526-4581 FAX No. 201-575-5863 NPNTO-61 Type# PHP Com ple ment VCEOfSUS) (Volte)	OCR Scan	NPNTO-61 2N4301 2N5048 2N5049 2N5313 2N5008 2N5288 2N5289 2N5317 2N5319 2N5048 2N4301 2N5049 2N5218 2N5313 2N5315 2N5387 2N5388 2N5542 2N5959	PDF
BUK475-400B Abstract: LD25C BUK475 3909 Text: Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 PHILIPS BUK 475-400B PowerMOS transistor INTERNATIONAL SbE D i- 1 GENERAL DESCRIPTION N-channel enhancem ent m ode	OCR Scan	OT186A 475-400B 711002b 0d44b4" BUK475-400B LD25C BUK475 3909	PDF

TRANSISTOR D 586 Search Results

TRANSISTOR D 586 Result Highlights (5)

TRANSISTOR D 586 Datasheets Context Search

ULN2003A application

tip122 tip127 audio amp schematic

Untitled

ua723cn

CEM8435A

BST72A

BST110

GSO 69

K1 transistor

727 Transistor power values

BUK657-500B

nf950

2N2222A 338

BUK657-500B

BFT25

2SC5012-T1

2N4400

2N4211

BUY89

BFP96

2SC 968 NPN Transistor

CT 1975 sam

2N5048

BUK475-400B