TRANSISTOR D 379 Search Results

TRANSISTOR D 379 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR D 379 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SFH6325, SFH6326 www.vishay.com Vishay Semiconductors High Speed Optocoupler, Dual Channel, 1 MBd, Transistor Output FEATURES A1 1 8 C VCC C1 2 7 C1(VO1) C2 3 6 C2(VO2) 4 5 E(GND) A2 i179071-3 • • • • • • • V D E i179026 DESCRIPTION Isolation test voltage, 5300 VRMS	Original	SFH6325, SFH6326 i179071-3 i179026 SFH6325 SFH6326 11-Mar-11	PDF
sfh6326-x017 Abstract: No abstract text available Text: SFH6325, SFH6326 www.vishay.com Vishay Semiconductors High Speed Optocoupler, Dual Channel, 1 MBd, Transistor Output FEATURES A1 1 8 C VCC C1 2 7 C1(VO1) C2 3 6 C2(VO2) 4 5 E(GND) A2 i179071-3 • • • • • • • V D E i179026 DESCRIPTION Isolation test voltage, 5300 VRMS	Original	SFH6325, SFH6326 i179071-3 i179026 SFH6325 SFH6326 11-Mar-11 sfh6326-x017	PDF
2n3055 motorola Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046 Text: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,	Original	1PHX11122C 2n3055 motorola tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046	PDF
"CHAPTER 1 Introduction to Power Semiconductors" Abstract: schematic diagram on line UPS 10kva sith thyristor "static induction thyristor" "Power Semiconductor Applications" Philips Power Semiconductor Applications Philips Semiconductors ups schematic 10kva static induction Thyristor CHAPTER 1 Introduction to Power Semiconductors SIT Static Induction Transistor Text: Introduction Power Semiconductor Applications Philips Semiconductors CHAPTER 1 Introduction to Power Semiconductors 1.1 General 1.2 Power MOSFETS 1.3 High Voltage Bipolar Transistors 1 Introduction Power Semiconductor Applications Philips Semiconductors General	Original		PDF
SN74HC02 Spice model Abstract: philips semiconductor data handbook SDAD001C SDFD001B SCAD001D SN7497 spice model SN74AHC14 spice Transistor Crossreference SLLS210 ci ttl sn74ls00 Text: LOGIC OVERVIEW 1 FUNCTIONAL INDEX 2 FUNCTIONAL CROSSĆREFERENCE 3 DEVICE SELECTION GUIDE 4 3 LOGIC SELECTION GUIDE FIRST QUARTER 1997 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest	Original		PDF
SILICON SMALL-SIGNAL DICE Abstract: No abstract text available Text: MOTOROLA SC {D IO DES /OPTO} 34 SILICON SMALL-SIGNAL TRANSISTOR DICE continued D I b3fc725S D037TÌD 34C 37990 T- 3 7 " ( S ' 2C3762 DIE NO. — PNP LINE SOURCE — DSL60 This die provides performance similar to that of the following device types: (SÌ 2N3762	OCR Scan	b3fc725S D037T DSL60 2C3762 2N3762 2N3763 2N3764 2N3765 SILICON SMALL-SIGNAL DICE	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE DbE D • ^ 5 3 1 3 1 QD15E37 7 A RZ2731B60W PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base ciass-C broadband pulse power amplifier w ith a frequency range o f 2,7 to 3,1 GHz.	OCR Scan	QD15E37 RZ2731B60W bbS3T31 DD1S241	PDF
2N3440 MOTOROLA Abstract: MM421 MOTOROLA transistor 413 MM420 SILICON SMALL-SIGNAL DICE Text: MOTOROLA SC 34 -CDIODES/OPTO} D " I b3b7255 34 C □037105 37982 T - i S '- t s ' SILICON SMALL-SIGNAL TRANSISTOR DICE continued 2C3439 DIE NO. — NPN LINE SOURCE — DSL242 & This die provides performance simifar to that of the following device types:	OCR Scan	b3b7255 DSL242 2C3439 2N3439 2N3440 MM420 MM421 2N3440 MOTOROLA MM421 MOTOROLA transistor 413 SILICON SMALL-SIGNAL DICE	PDF
2N2540 Abstract: 2N2846 2n5219 MPSD05 2N1959 2n3299 Text: 34 MOTOROLA SC -CDIODES/OPTO} D 1 L3fc,7355 □□37T74 34C 37974 7 " - 3 r - /$• SILICON SMALL-SIGNAL TRANSISTOR DICE continued 2C2222A DIE NO. — LINE SOURCE — DMB101 i npn This die provides performance similar to that of the following device types:	OCR Scan	37T74 2C2222A DMB101 2N696* 2N697 2N731 2N1420* 2N1613 2N1711 2N1959* 2N2540 2N2846 2n5219 MPSD05 2N1959 2n3299	PDF
transistor NEC D 587 Abstract: LS 1691 BM UPA802T l 9143 NEC D 587 Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD T he/xP A 802T has b u ilt-in 2 1o w -v o It age tra n s is to rs w h ic h are d e sig ne d PACKAGE DRAWINGS	OCR Scan	uPA802T 2SC4227) transistor NEC D 587 LS 1691 BM l 9143 NEC D 587	PDF
P571 Abstract: TLP570 lm 383 ic Text: GaAs IRED & PHOTO-TRANSISTOR TLP570,571 TLP570 P R O G R A M M A B L E C O N T R O LLE R S A C / D C - IN PUT M O D U L E SO L ID STATE RELAY T h e T O S H IB A T L P 570 a n d T L P 571 c o n s ist o f a d a r lin g to n co n n ected p h o to -tra n s is to r o p tic a lly coupled to a g a lliu m a rse n id e in fra re d	OCR Scan	TLP570 TLP570) P571 lm 383 ic	PDF
TRANSISTOR si 6822 Abstract: SI 6822 PA2981C uPA2981 transistor 6822 si TRANSISTOR 6822 si 6822 transistor 6822 TRANSISTOR UPA2982 TRANSISTOR NPN 6822 Text: M 'ê ' h =7 C o m p o u n d Transistor MP x t° ^ M > ' □ > h ^ ^ LED, A 2 9 8 1 , 2 9 8 2 ^ V 7 °, ^ T U"f «H— -T ¿¿PA2981, 2982ÌÌ, P N P , N PN F 7 y VsX i 7 t H B Î f f i i ' 1 4* Z>, Hiïl V - X f t i 8 ¡ M f à M f à r - >) > h > h 9 > P X ÿ T ^ 4 T to	OCR Scan	uPA2981 uPA2982 TRANSISTOR si 6822 SI 6822 PA2981C transistor 6822 si TRANSISTOR 6822 si 6822 transistor 6822 TRANSISTOR TRANSISTOR NPN 6822	PDF
2N4260 Abstract: No abstract text available Text: MOTOROLA SC ~34 OIODES/OPTOJ 6367255 MOTOROLA SC »E\|b3b75SS <DIODES/OPTO □ 0 3 7 cn t , 34C 37996 t. \| r-*7-/3 SILICON SMAf .L-SIGNAL TRANSISTOR DICE continued) 2C4261 DIE NO, — PNP LINE SOURCE — DMB265 This die provides performance similar to that of the following device types:	OCR Scan	b3b75SS DMB265 2C4261 2N4260 2N4261 MM4261A* MMT4261	PDF
2SC4411 Abstract: No abstract text available Text: Ordering number: EN3790 _2SC4411 No.3790 PNP Epitaxial P lanar Silicon Transistor SAfHYO i Very High-Definition CRT Display Video Output Applications A p p licatio n s •Wide-band amp. F e a tu re s • High fT fT= 1.2GHz typ . • High breakdown voltage (Vcbo = 100V,Vqeo = 80V).	OCR Scan	EN3790 2SC4411 500mA)	PDF

BJE 42 Abstract: 9 BJE 42 Text: Philips S em iconductors bbS3R31 003010b H R Ap y Product spec if ication UHF power MOS transistor BLF542 N AMER PHILIPS/DISCRETE FEATURES bRE T> PIN CONFIGURATION • High power gain < • Easy power control • Gold metallization '" " “v o • Good thermal stability	OCR Scan	bbS3R31 003010b BLF542 MBA931 MRA732 MRA971 BJE 42 9 BJE 42	PDF
buk456 Abstract: No abstract text available Text: N AUER PHILIPS/DISCRETE bRE ] • bbSa^Bl DDBQbBQ 5?B * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	O220AB BUK456-100A/B BUK456 -100A -100B 0Q30b63 buk456	PDF
nytronics relay j2 Abstract: No abstract text available Text: ERICSSON ^ September 1989 PBL 3799 Subscriber Line Interface Circuit Description Key features PBL 3799 is an analog Subscriber Line Interface Circuit SLIC , which is fabricated in a 75 V bipolar, monolithic process. • The programmable, resistive feed circuit incorporates a switch mode regulator to	OCR Scan	3799J 3799QC nytronics relay j2	PDF
Untitled Abstract: No abstract text available Text: ERICSSON $ September 1989 PBL 3796, PBL 3796/2 Subscriber Line Interface Circuit Description Key features PBL 3796 63 V and PBL 3796/2 (48 V) are analog Subscriber Line Interface Circuits (SLICs), which are fabricated in a 75 V bipolar, monolithic process.	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: Transistors Digital transistors built-in resistors D T C 114 E E / D T C 114 E U A / D T C 1 14 E K A D T C 114 E C A / D T C 114 E S A •F e a tu re s 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input	OCR Scan	DTC114EKA DTC114ECA DTC114ESA GG17G45 E/DTC114EUA/DTC114EKA/DTC114ECA/DTC114ESA GD17D4L.	PDF
transistor pnp ecg 180 Abstract: Transistor 123AP 123AP transistor BU 102A transistor fet ecg transistor. ECG 123AP 4511 gm Bt 2313 transistor t18 FET ecg 123 transistor Text: PHILIPS E C G INC S4E D Transistors icont'd ECG Type D escription and A p plicatio n • bbSBTEfl DDDTIH? &12 ■ E C G Maximum Ratings at T c = 25°C Unless Otherwise Noted) C ollector To Base V olts C ollector To E m itter V olts Base to E m itter V olts	OCR Scan	GGG71H7 ECG58 ECG59) TB-35 T44-1 ECG59 ECG58) ECG60 transistor pnp ecg 180 Transistor 123AP 123AP transistor BU 102A transistor fet ecg transistor. ECG 123AP 4511 gm Bt 2313 transistor t18 FET ecg 123 transistor	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SC X S TR S/ R F 12E D I b3t.7254 GGflSEME 5 \| T- 3 3 - 0 7 ' r- 33-/7 MOTOROLA SE M IC O N D U C T O R TECHNICAL DATA N PN M JD31,C PN P M JD32,C C o m p le m e n ta ry P o w e r T r a n s isto rs D P A K For Surface M o u n t A pp lication s Designed for general purpose amplifier and low speed switching applications.	OCR Scan	TIP31 TIP32 MJD31, MJD32T MJD31C, MJD32C	PDF
Untitled Abstract: No abstract text available Text: April 1997 Micro Linear ML4871 High Current Boost Regulator GENERAL DESCRIPTION FEATURES The ML4871 is a continuous conduction boost regulator designed for D C to D C conversion in multiple cell battery powered systems. Continuous conduction allows the regulator to maxim ize output current for a given inductor.	OCR Scan	ML4871 ML4871 200kH	PDF
ML407 Abstract: 244-X ML4871 Text: « IL M ^ ic r o L in e a r U M L 4 \|^ 8 P 7 1 High Current Boost Regulator GENERAL DESCRIPTION FEATURES The ML4871 is a continuous conduction boost regulator designed for D C to D C conversion in multiple cell battery powered systems. Continuous conduction allow s the	OCR Scan	ML4871 200kH ML4871CS-3 ML4871CS-5 ML4871ES-3 ML4871ES-5 IC4508) ML407 244-X	PDF
BD 7820 Abstract: No abstract text available Text: April 1997 M gL M ic r o L i n e a r ML4872 High Current Boost Regulator with Shutdown GENERAL DESCRIPTION FEATURES The ML4872 is a continuous conduction boost regulator designed for DC to DC conversion in multiple cell battery powered systems. Continuous conduction allow s the	OCR Scan	ML4872 ML4872 200kH BD 7820	PDF

TRANSISTOR D 379 Search Results

TRANSISTOR D 379 Result Highlights (5)

TRANSISTOR D 379 Datasheets Context Search

Untitled

sfh6326-x017

2n3055 motorola

"CHAPTER 1 Introduction to Power Semiconductors"

SN74HC02 Spice model

SILICON SMALL-SIGNAL DICE

Untitled

2N3440 MOTOROLA

2N2540

transistor NEC D 587

P571

TRANSISTOR si 6822

2N4260

2SC4411

BJE 42

buk456

nytronics relay j2

Untitled

Untitled

transistor pnp ecg 180

Untitled

Untitled

ML407

BD 7820