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    TRANSISTOR D 304 Search Results

    TRANSISTOR D 304 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D 304 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tip122 tip127 audio amp schematic

    Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
    Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.


    Original     		PDF DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier

    ultra low noise NPN transistor

    Abstract: Transistor Arrays "Transistor Arrays" PNP monolithic Transistor Arrays RF TRANSISTOR 10GHZ low noise UHF pnp transistor HFA3046 ultra low noise transistor harris 3046 HFA3128
    Text: so Hm 3046, HFA3096, HFA3127, HFA3128 HARRIS S E M I C O N D U C TJM K Ultra High Frequency Transistor Arrays August 1996 Description • NPN Transistor fT . 8GHz • NPN Current Gain (hFe).


    OCR Scan     		PDF HFA3096, HFA3127, HFA3128 HFA3046, HFA3127 HFA3128 HFA3046 ultra low noise NPN transistor Transistor Arrays "Transistor Arrays" PNP monolithic Transistor Arrays RF TRANSISTOR 10GHZ low noise UHF pnp transistor ultra low noise transistor harris 3046

    BF495

    Abstract: BF495 transistor
    Text: _ BF495 N AMER PHILIPS/DISCRETE . DbE D ^ =53=131 001H3QS D ' r-2/-/7 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 variant intended for h.f. applications in radio and television receivers; it is especially recommended for f.m. tuners, i.f. amplifiers in a.m./f.m. receivers where a low transistor


    OCR Scan     		PDF BF495 001H3QS emi2312 53T31 DD13313 bbS3T31 7Z62763 7Z08226 BF495 BF495 transistor

    Untitled

    Abstract: No abstract text available
    Text: bbS3^31 0024535 304 « A P X N ANER PHILIPS/DISCRETE BCV26 BCV46 b?E D SILICON PLANAR DARLINGTON TRANSISTOR P-N-P silicon planar darlington transistor in a plastic S O T 2 3 envelope. N-P-N complement is BCV27/47. Q U IC K R E F E R E N C E D A T A BCV26 BCV46


    OCR Scan     		PDF BCV26 BCV46 BCV27/47.

    CA3046 RCA

    Abstract: ICAN-5296 CA304B CA3046 CA3045 RCA-CA3018 rca CA3046 LLAM CA3045F 92CS-I52I6
    Text: D E | 3fl7SDÛl 0014b0G 5 G E SOLID STATE 01 3875081 G Arrays _ SOLID S T AT E 0 1E 1 4 600 D CA3045, CA3046 General-Purpose N-P-N Transistor Arrays Three Isolated Transistors and One DifferentiallyConnected Transistor Pair For Low-Power Applications at Frequencies


    OCR Scan     		PDF CA3045, CA3046 CA3045 CA3046 92CS-K256H1 92CS-ISI96 CA3046 RCA ICAN-5296 CA304B RCA-CA3018 rca CA3046 LLAM CA3045F 92CS-I52I6

    CA3046E

    Abstract: si3206 et 3045
    Text: d e | 3fl?50fli o a m t o o 2 01E 14600 D G E SOLID STATE 01 3875081 G E SOLID STATE Arrays _ CA3045, CA3046 General-Purpose N-P-N Transistor Arrays T h re e Isolated Transistors and O ne D ifferen tiallyC o n nected Transistor Pair For L ow -P o w er A pplications at Frequencies


    OCR Scan     		PDF 50fli CA3045, CA3046 256RI CA3046E si3206 et 3045

    MRF342

    Abstract: transistor D 2581 RF340
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF342 The RF Line 24 W 1 0 0 -1 5 0 MHz R F POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN S IL IC O N . . d e s ig n e d p rim a rily fo r use in V H F a m p lifie rs w ith a m p litu d e m o d u la tio n and


    OCR Scan     		PDF MRF342 RF340 RF344 MRF342 transistor D 2581

    MP4304

    Abstract: No abstract text available
    Text: TOSHIBA MP4304 TO SH IBA PO W E R TRANSISTOR M O D ULE SILICON NPN EPITA XIAL TYPE HIGH GAIN PO W E R TRANSISTOR 4 IN 1 M P 4 304 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING.


    OCR Scan     		PDF MP4304 MP4304

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    TRANSISTOR GB 558

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •


    OCR Scan     		PDF 2SC5013 2SC5013-T1 2SC5013-T2 TRANSISTOR GB 558

    TT 2222

    Abstract: No abstract text available
    Text: N AMER PHIL IPS/D ISCR ETE btiS3T31 DDSTOMS STb I IAPX B LV 45/12 b'lE D V.H.F. POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz communications band. Features • multi-base structure and emitter-ballasting resistors fo r an optimum temperature profile


    OCR Scan     		PDF btiS3T31 OT-119) BLV45/12 TT 2222

    BUK453-100A

    Abstract: T0220AB
    Text: PHILIPS INTERNATIONAL L.5E D • 711Dfl2t QDb4041 MTO * P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 711Dfl2t QDb4041 BUK453-1OOA/B T0220AB BUK453 -100A -100B BUK453-100A

    BUZ34

    Abstract: 6j11 V103
    Text: PowerMOS transistor N AMER PHILIPS/DISCRETE BUZ34_ ObE D • bb53T31 ODlMblS E ■ July 1987 GENERAL DESCRIPTION N-channel enhancement mode fleld-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ34 bb53T31 bb53131 T-39-1 BUZ34 6j11 V103

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b 'lE ]> bb53^31 □ D 2 f i ci m IAPX TTD BLV21 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­


    OCR Scan     		PDF BLV21

    TRANSISTOR BF495

    Abstract: BF495 transistor BF495 BF495C N10Y BF495D transistor TI 310
    Text: _ N AMER PHILIPS/DISCRETE " ~ . DbE D • BF495 htSBTBl 001H30Û G ■ T - 2 1 - I* ? ' SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 variant intended for h.f. applications in radio and television r a n r a n ; it is especially recommended for f.m . tuners, i.f. amplifiers in a.m./f.m. receivers where a low transistor


    OCR Scan     		PDF BF495 DD15313 7Z07390 31-iy D01S31S 7Z62763 7Z08226 TRANSISTOR BF495 BF495 transistor BF495 BF495C N10Y BF495D transistor TI 310

    Untitled

    Abstract: No abstract text available
    Text: P h ilip ^ e m ic o n d u c to i^ ^ • tatiS3 T 31 DDBltaflfi 75b M APX Pro d u c^p e cifica tio n NPN 1 GHz video transistor ^ BFQ162 N AUER PHILIPS/DISCRETE b'lE » PINNING DESCRIPTION NPN silicon epitaxial transistor in a SOT32 TO-126 package, with emitter-ballasting resistors and a


    OCR Scan     		PDF BFQ162 O-126) MBB896 UBB43S

    phonograph preamplifiers

    Abstract: differential pair cascode darlington fua 3046 dc uA3045 MA3026 MONOLITHIC DIODE ARRAYS fairchild uA3046 darlington pair transistor cd 3054 LA3026
    Text: |jA3018 •MA3018A. [i A3019 •mA3026 •mA3036 MA3039 • JA3045 •mA3046 •mA3054 •mA3086 TRANSISTOR AND DIODE ARRAYS F A IR C H IL D L IN E A R IN T E G R A T E D C IR C U IT S G E N E R A L D E S C R IP T IO N — Fairchild Transistor and Diode A rrays consist o f general purpose integrated circuit devices constructed


    OCR Scan     		PDF jA3018 MA3018A. A3019 MA3026 MA3036 MA3039 JA3045 mA3046 MA3054 MA3086 phonograph preamplifiers differential pair cascode darlington fua 3046 dc uA3045 MA3026 MONOLITHIC DIODE ARRAYS fairchild uA3046 darlington pair transistor cd 3054 LA3026

    2N599 JAN

    Abstract: 2N599 N468 MIL-S-19491 Y2 TRANSISTOR CONFORMANCE pnp germanium transistor
    Text: M IL-S-19500/186C NAVY 22 June 1964 SUPERSEDING MIL-S-l9500/166B(NAvy) 20 September 1962 (See 6.2) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, TYPE 2N599 1. SCOPE 1.1 D escription.- This Specification covers the detailed requirem ents for a PNP germanium transistor


    OCR Scan     		PDF MIL-S-19500/166C 19500/166B 2N599 MIL-S-19500, 2N599. M3L-S-19500/166C SH70ST 2N599 JAN 2N599 N468 MIL-S-19491 Y2 TRANSISTOR CONFORMANCE pnp germanium transistor

    transistor vergleichsliste

    Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
    Text: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N


    OCR Scan     		PDF

    bfr95 philips

    Abstract: bfr95
    Text: Product specification Philips Sem iconductors 7- 3 3 ' O S NPN 3.5 GHz wideband transistor DESCRIPTION 711002b D0M5773 H76 M P H I N SbE D PHILIPS INTERNATIONAL BFR95 PINNING NPN resistance-stabilized transistor in a SOT5 TO-39 metal envelope, with collector connected to the case.


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PowerMOS transistor N AMER PHILIPS/DISCRETE _ BUZ34_ ObE D • ^ 5 3 ^ 3 1 QOlHblE 2 ■ r-s^-n July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ34_ BIIZ34_ bb53131 T-39-11 QD14tjlfi T-39-11-

    MRF517

    Abstract: 2761 l transistor 336 motorola OB2200
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF517 The R F Line HIG H FREQUENCY NPN SILICON HIGH FREQ UENCY TRANSISTOR TRANSISTOR NPN SILICON . . . designed s p e c ific a lly fo r b roadb and a p p lic a tio n s re q u irin g lo w d is to r tio n characteristics. S p e cifie d fo r use in C A T V d is tr ib u tio n


    OCR Scan     		PDF MRF517 MRF517 2761 l transistor 336 motorola OB2200

    BFR95

    Abstract: 1 Fp 33 transistor bfr95 philips QDHS773 D2 144 transistor
    Text: Product specification Philips Semiconductors r^ 3 3 -o s NPN 3.5 GHz wideband transistor DESCRIPTION 711062b QDHS773 H76 M P H I N SbE D PHILIPS INTERNATIONAL BFR95 PINNING NPN resistance-stabilized transistor in a SOT5 TO-39 metal envelope, with collector connected to the case.


    OCR Scan     		PDF BFR95 711002b QDHS773 MBB199 BFR95 1 Fp 33 transistor bfr95 philips D2 144 transistor