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    TRANSISTOR D 2627 Search Results

    TRANSISTOR D 2627 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D 2627 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ph 4148 zener diode

    Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
    Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS


    Original     		PDF DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148

    Untitled

    Abstract: No abstract text available
    Text: BLF7G27L-200PB Power LDMOS transistor Rev. 2 — 20 February 2012 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF7G27L-200PB

    transistor j449

    Abstract: BLF7G27L-200PB TRANSISTOR BV 32 j449 transistor
    Text: BLF7G27L-200PB Power LDMOS transistor Rev. 2 — 20 February 2012 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF7G27L-200PB transistor j449 BLF7G27L-200PB TRANSISTOR BV 32 j449 transistor

    BLF8G27LS-140V

    Abstract: SOT1120B
    Text: BLF8G27LS-140V Power LDMOS transistor Rev. 2 — 27 March 2013 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2600 MHz to 2700 MHz.


    Original     		PDF BLF8G27LS-140V Excelle10 BLF8G27LS-140V SOT1120B

    Untitled

    Abstract: No abstract text available
    Text: BLF7G27L-135 Power LDMOS transistor Rev. 2 — 26 March 2012 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.


    Original     		PDF BLF7G27L-135

    j310 replacement

    Abstract: 26275
    Text: BLF7G27L-135 Power LDMOS transistor Rev. 2 — 26 March 2012 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.


    Original     		PDF BLF7G27L-135 j310 replacement 26275

    BLF8G27LS-140V

    Abstract: No abstract text available
    Text: BLF8G27LS-140V Power LDMOS transistor Rev. 1 — 7 March 2013 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1.


    Original     		PDF BLF8G27LS-140V BLF8G27LS-140V

    Untitled

    Abstract: No abstract text available
    Text: BLF8G27LS-140 Power LDMOS transistor Rev. 1 — 28 March 2013 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF8G27LS-140

    Untitled

    Abstract: No abstract text available
    Text: BLF8G27LS-140 Power LDMOS transistor Rev. 2 — 5 June 2013 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.


    Original     		PDF BLF8G27LS-140

    Untitled

    Abstract: No abstract text available
    Text: BLF8G27LS-150V; BLF8G27LS-150GV Power LDMOS transistor Rev. 2 — 22 April 2013 Objective data sheet 1. Product profile 1.1 General description 150W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.


    Original     		PDF BLF8G27LS-150V; BLF8G27LS-150GV BLF8G27LS-150V 8G27LS-150GV

    IRF7341 application note

    Abstract: ccfl driver schematic lcd ccfl driver schematic AME9000 pwm variable frequency drive circuit diagram chop ccfl driver MARKING EA1 star delta connection LOGIC wiring circuit diagram 24PIN AME9001
    Text: AME, Inc. CCFL Backlight Controller AME9001 n General Description n Pin Configuration The AME9001 controller provides a cost efficient means to drive single or multiple cold cathode fluorescent lamps CCFL . Specifically the AME9001 drives 3 external MOSFETs that, in turn, drive a wirewound transformer


    Original     		PDF AME9001 AME9001 24PIN 2023-DS9001-A IRF7341 application note ccfl driver schematic lcd ccfl driver schematic AME9000 pwm variable frequency drive circuit diagram chop ccfl driver MARKING EA1 star delta connection LOGIC wiring circuit diagram

    ccfl backlight controller schematic

    Abstract: AME9001AETH IRF7341 application note AME9000 MARKING EA1 circuit fluorescent tube 24v pwm variable frequency drive circuit diagram chop 24PIN 2N3906 AME9001
    Text: AME, Inc. CCFL Backlight Controller AME9001 n General Description n Pin Configuration The AME9001 controller provides a cost efficient means to drive single or multiple cold cathode fluorescent lamps CCFL . Specifically the AME9001 drives 3 external MOSFETs that, in turn, drive a wirewound transformer


    Original     		PDF AME9001 AME9001 24PIN 2023-DS9001-B ccfl backlight controller schematic AME9001AETH IRF7341 application note AME9000 MARKING EA1 circuit fluorescent tube 24v pwm variable frequency drive circuit diagram chop 2N3906

    TRANSISTOR D 2627

    Abstract: Telefunken Electronic transistor D 2624 transistor k 2628 Telefunken 105 transistor 2all CB-108 ic 546 DIN 41872 transistor BU 104
    Text: TELEFUNKEN ELECTRONIC 17E D • ÔSHDDTb DOQRMfi? ■ BU 546 TTtliLEHFtyJDiSSES&i} electronic Crwtivel«chooioo«s Silicon NPN Power Transistor Applications; Switching mode power supply Features: • In triple diffusion technique • Short switching time • High reverse voltage


    OCR Scan     		PDF r-33-13 T-33-13 2380T TRANSISTOR D 2627 Telefunken Electronic transistor D 2624 transistor k 2628 Telefunken 105 transistor 2all CB-108 ic 546 DIN 41872 transistor BU 104

    TRANSISTOR D 2627

    Abstract: transistor D 2624 transistor k 2628 TRANSISTOR 1300 3B on 2518 transistor TCA 321 Telefunken Electronic 12A3 T0126 BU546
    Text: TELEFUNKEN ELECTRONIC 17E D • ÔSHDDTb DOQRMfi? ■ BU 546 TTtliLEHFtyJDiSSES&i} electronic Crwtivel«chooioo«s Silicon NPN Power Transistor Applications; Switching mode power supply Features: • In triple diffusion technique • Short switching time • High reverse voltage


    OCR Scan     		PDF r-33-13 T0126 15A3DIN TRANSISTOR D 2627 transistor D 2624 transistor k 2628 TRANSISTOR 1300 3B on 2518 transistor TCA 321 Telefunken Electronic 12A3 T0126 BU546

    pepi c

    Abstract: TRANSISTOR D 2627 pepi cr MRF427 transistor D 2624 arco 469 trimmer capacitor arco TRIMMER capacitor 463 s49 transistor pepi TRIMMER capacitor 469
    Text: MOTOROLA SC XSTRS/R 4bE F D m b3b7254 00T4b4b ô T - 3 3 "O S MOTOROLA SEM ICONDUCTOR MRF427 MRF427A TECHNICAL DATA The RF Line 25 W ( P E P ) - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN S IL IC O N . . . designed p r im a r ily fo r hig h -v o lta g e a p p lic a tio n s as a h ig h -p o w e r


    OCR Scan     		PDF b3b7254 00T4b4b T-33-cR MRF427 MRF427A MRF427, T-33-09 pepi c TRANSISTOR D 2627 pepi cr transistor D 2624 arco 469 trimmer capacitor arco TRIMMER capacitor 463 s49 transistor pepi TRIMMER capacitor 469

    MRF861

    Abstract: l6sh
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor D e s ig n e d fo r 2 4 V olt U H F la rg e - s ig n a l, c o m m o n e m itte r, c la s s A lin e a r a m p lifie r a p p lica tio n s in in d u stria l and c o m m e rc ia l e q u ip m e n t o p e ra tin g in the


    OCR Scan     		PDF MRF861 l6sh

    2SK470

    Abstract: 2sk47 btt4
    Text: SEC j i i r / W Z M O S Field E ffe ct P o w e r T ra n sisto r J _ 2SK470 v ^ — MOS F E T X f m I i f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2 S K 4 7 0 ii, F E T t\ X f y f > d c > ;< — i 7 • - t — • 'J 1 / —


    OCR Scan     		PDF 2SK470 2SK470Ã PWS10 2SK470 2sk47 btt4

    2SK163

    Abstract: 2sk163 transistor Free 9014 transistor 2sk163 PA33 SS 9014 TC-5466
    Text: NEC j m = t= r iv r x J u n c t io n Field E ffe c t T r a n s is to r A 2SJ44 V 3 h = 7 > i> * 9 P-Channel Silicon Jun ction Field Effect Transistor Audio Frequercy Low Noise Amplifier ^ • » 0 / P A C K A G E D IM EN SIO N S ^/FEATU RES Unit : mm O ¡15I f EE, H i g h


    OCR Scan     		PDF 02SK163 SC-43B 545tS4i8 2SK163 2sk163 transistor Free 9014 transistor 2sk163 PA33 SS 9014 TC-5466

    TC-6252

    Abstract: TC6252 WJ M64
    Text: - r S • — h * SEC i ï r / V C om po un d Transistor Î 7 GN1F4Z ^ 4f J i ^ I U O y< yf 7 l*3 Ü X Î É tf l £ R i = 2 2 L X ^ Î 1 ( - P - Ì Ì ! m m k Q ) B O O o G A 1F 4 Z 3 t > - 7° U / 9 > 'J T l È f f l T ' ë ì e t ( T a — 25 °C) m


    OCR Scan     		PDF Cycled50 82cMS25Ã TC-6252 TC6252 WJ M64

    TRANSISTOR D 2627

    Abstract: SG3627 20ii2 SG3627J SG1627J
    Text: SG1627/SG2627/SG3627 SILICON DUAL HIGH-CURRENT OUTPUT DRIVER LINEAR INTEG RATED CIRCUITS DESCRIPTION FEATURES The SG1627 series devices are monolithic, high-speed driver integrated circuits designed to interface digital control logic with high current loads. Each


    OCR Scan     		PDF SG1627/SG2627/SG3627 500mA 300ns SG1524 SG1627 MIL-STD-883 SG1627 500mA SG1627J/883B SG1627J TRANSISTOR D 2627 SG3627 20ii2 SG3627J

    TRANSISTOR D 2627

    Abstract: No abstract text available
    Text: SG1627ISG2627/SG3627 SILICON ΠN E ^L LINEAR INTEG RATED CIRCUITS DUAL HIGH-CURRENT OUTPUT DRIVER D E S C R IP T IO N FEA TU R ES The SG1627 series devices are monolithic, high-speed driver integrated circuits designed to interface digital control logic with high current loads. Each


    OCR Scan     		PDF SG1627ISG2627/SG3627 500mA 300ns SG1524 MIL-STD-883 SG1627 16-PIN SG1627J/883B SG1627J SG2627J TRANSISTOR D 2627

    SG3627

    Abstract: TRANSISTOR D 2627 SG1627J SG1627 SG3627J constant current source with 500mA SG2627 SG1627J/883B SG1524 Scans-003836
    Text: SG1627/SG2627/SG3627 SILIC O N GENERÄL LINEAR INTEGRATED CIRCUITS DUAL HIGH-CURRENT OUTPUT DRIVER D E S C R IP T IO N FE A TU R E S The SG1627 series devices are monolithic, high-speed driver integrated circuits designed to interface digital control logic with high current loads. Each


    OCR Scan     		PDF SG1627/SG2627/SG3627 SG1627 500mA 16-PIN SG1627J/883B SG1627J SG2627J SG3627J SG3627 TRANSISTOR D 2627 SG3627J constant current source with 500mA SG2627 SG1524 Scans-003836

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


    OCR Scan     		PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


    OCR Scan     		PDF