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    TRANSISTOR D 1047 Search Results

    TRANSISTOR D 1047 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D 1047 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ssr schematic circuit

    Abstract: HOW TO DRIVE SSR USING MOSFET DRIVER HSSR-7110 5V ssr MIL-STD-704A SSR schematics ac ssr 2N2906 54ACT00 74S05
    Text: Low On-Resistance Solid-State Relays for High-Reliability Applications Application Note 1047 Introduction In military, aerospace, and commercial applications, the high performance, long lifetime, and immunity to shock and vibration give solid-state relays distinct advantages


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    PDF HSSR-7110 ssr schematic circuit HOW TO DRIVE SSR USING MOSFET DRIVER 5V ssr MIL-STD-704A SSR schematics ac ssr 2N2906 54ACT00 74S05

    HOW TO DRIVE SSR USING MOSFET DRIVER

    Abstract: RCA Solid State 7110 resistor 330 Ohm resistor led specification sheet HEWLETT-PACKARD 1036 HSSR-7110 military ssr
    Text: Low On-Resistance Solid-State Relays For High-Reliability Applications Application Note 1047 8 7 6 5 Introduction In military, aerospace, and commercial applications, the high performance, long lifetime, and immunity to shock and vibration give solidstate relays distinct advantages over electromechanical relays. The


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    PDF HSSR-7110 5091-4502E HOW TO DRIVE SSR USING MOSFET DRIVER RCA Solid State 7110 resistor 330 Ohm resistor led specification sheet HEWLETT-PACKARD 1036 military ssr

    PCF7952

    Abstract: pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191
    Text: Philips Semiconductors, Inc. Product Discontinuation Notice DN50 Exhibit A December 31, 2003 SEE DN50 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.


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    PDF VP22480-3 VP22480-5 VP22530-2 PCF7952 pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191

    ph 4148 zener diode

    Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
    Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS


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    PDF DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148

    ATL35

    Abstract: nand gate layout ATL60
    Text: ATL35 Cell Library-1.0-12/97 ATL35 0.35µ Cell Library How to Use This Cell Library . 7-2 Cell Parameters . 7-2


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    PDF ATL35 nand gate layout ATL60

    HF 331 transistor

    Abstract: No abstract text available
    Text: _LL 86D 01952* o o m n o DbE D N AMER PHILIPS/DXSCRETE BLY92A T -3 3 -& 7 D 2 A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and


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    PDF BLY92A HF 331 transistor

    d 1047 transistor

    Abstract: BLY92A yl 1042 transistor t33d transistor A106 ferroxcube wideband hf choke philips Trimmer 60 pf
    Text: II DtiE d N AMER P HILIPS/DISCRETE 86D 0 1952* D 7 • oom no s 3 3 4*9 BLY92A * _ A_ V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and


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    PDF bly92a OT-48/2. d 1047 transistor BLY92A yl 1042 transistor t33d transistor A106 ferroxcube wideband hf choke philips Trimmer 60 pf

    2SB817P

    Abstract: 2SD1047P ITO2169
    Text: Ordering number: ENN6572 2SB 817P : PN P Epitaxial Planar Silicon Transistor 2 S D 1047P : NPN Triple Diffused Planar Silicon Transistor 2SB817P / 2SD1047P Is a H Y O i 140V / 12A, AF80W Output Applications Features Package Dimensions • Capable of being mounted easily because of onepoint fixing type plastic molded package Inter­


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    PDF ENN6572 2SB817P 2SD1047P 2SB817P 2SD1047P AF80W 2SD1047P] ITO2169

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    BLX98

    Abstract: philips carbon film resistor carbon resistor WE VQE 24 E 2222 311 capacitor philips WE VQE 11 E RF NPN POWER TRANSISTOR C 10-50 GHZ 4322 057
    Text: bSE D 7 1 1 0 0 2 b D 0 b 3 5 S S TT3 • P H I N PH IL IP S BLX98 INTERNATIONAL U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers o f television transposers and transmitters in band IV-V.


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    PDF 711002b D0b35SS BLX98 b35b0 BLX98 philips carbon film resistor carbon resistor WE VQE 24 E 2222 311 capacitor philips WE VQE 11 E RF NPN POWER TRANSISTOR C 10-50 GHZ 4322 057

    BLX98

    Abstract: BLX97 transistor TT 2222 WE VQE 11 E WE VQE 24 E BLX96 IEC134 Philips film capacitors 27 pf BLX-97 multi-emitter transistor
    Text: N AMER P H I L I P S / D I S C R E T E M A I N T E N A N C E T YPE b^E D b b S 3 T 31 II • 0 D S T b 5 1 T T 4 ■ APX B L X 96 U.H.F. LINEAR PO W ER TRANSISTOR N-P-N multi-emitter silicon planar epitaxial transistor primarily for use in linear u.h.f. amplifiers for


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    PDF 0DSTb51 BLX96 7z72543 BLX98 BLX97 transistor TT 2222 WE VQE 11 E WE VQE 24 E BLX96 IEC134 Philips film capacitors 27 pf BLX-97 multi-emitter transistor

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


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    PDF TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485

    2SK943

    Abstract: d 1047 transistor
    Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-7T-MOSm IN D U S T R I A L A P P L I C A T I O N S H IG H S P E E D , H I G H CURRENT SW ITC HIN G A P P L I C A T I O N S . DC-DC C O N V E R T E R ,R E L A Y D R IV E ANO MOTOR D R IV E A P P L I C A T I O N S .


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    PDF

    3N142

    Abstract: ta7306 RCA-3N142 M098 100CC IU 1047 General Electric Solid State rca transistor RCA Solid State Power Transistor
    Text: dT G E SOLID STATE de |3B75D6] i o o m i a i 1 I '11" _ Small-Signal MOSFETs 3875081 G E SOLID STATE 01E 14989 Silicon Insulated-Gate Field-Effect Transistor 3N142 D T - 3 1 *2-s For Industrial and Military Applications to 175 MHz Features: • Large dynamic range


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    PDF 3N142 92CS-I4096 3N142 ta7306 RCA-3N142 M098 100CC IU 1047 General Electric Solid State rca transistor RCA Solid State Power Transistor

    transistor buz 350

    Abstract: d 1047 transistor
    Text: SIEMENS BUZ 350 SIPMOS Power Transistor O • N channel • Enhancement mode ' • Avalanche-rated V ’ iOb'SS fé 3 P in i Pin 2 G Type Vbs BUZ 350 200 V b 22 A f h S on 0.12 w Pin 3 D S Package Ordering Code TO-218 AA C67078-S3117-A2 Maximum Ratings


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    PDF O-218 C67078-S3117-A2 O-218AA transistor buz 350 d 1047 transistor

    POWER TRANSISTORS 10A 400v pnp

    Abstract: NPN Transistor 10A 400V to3 2N1489 2N1468 pnp 400v 10a 1526a 2NXXXX 2N6350 2N1400 2N6352
    Text: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4 .\. v ii I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389


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    PDF T-33-Ã flES40aa D0D07Ã 19S00 2N389 /173A 2N424 2N1016B /102A POWER TRANSISTORS 10A 400v pnp NPN Transistor 10A 400V to3 2N1489 2N1468 pnp 400v 10a 1526a 2NXXXX 2N6350 2N1400 2N6352

    2NXXXX

    Abstract: NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package
    Text: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4. \ . v i i I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389


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    PDF 88DQ0787 fl2S40aa 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1480 2N1481 2N1484 2NXXXX NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package

    Untitled

    Abstract: No abstract text available
    Text: h 7 > y X $ / T ransistors FMW6 FMW6 NPN '><J = l> h 7 > ' s Z $ iS J l l# lliffl/R F Amplifier Epitaxial Planar Dual Mini-Mold NPN Silicon Transistor vfiilS l/D im e n sio n s Unit : mm Str >4 V ;V v4i ~ r • 1) ^ — >'f — 5— T — JUK ) "j *t — v T '


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    PDF 500MHz 0V/10mA 20mA/4mA

    PU4312

    Abstract: 6 "transistor arrays" ic
    Text: Power Transistor Arrays P U4312 PU4312 Silicon NPN/PNP Epitaxial Planar Type P a c k a g e D im e n s io n s P o w e r A m p lifier, S w itch in g • F e a tu re s • L ow c o lle c to r-e m itte r s a tu ra tio n v o ltag e VcEtsao • G ood lin earity o f DC c u r re n t gain (Iife )


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    PDF PU4312 i32ftS2 0G170M7 PU4312 6 "transistor arrays" ic

    3D24N2Y

    Abstract: transistor sc 238 9008 transistor transistor sc 308 SAL 41 transistor 9013 1008 transistor X2C70 transistor D 1002 3D24N
    Text: SERVICE-MITTEILUNGEN VEB INDUSTRIEVERTRIEB R U N O F U N K U N D FE R N SE H E N AUSGABE: M m ri r a d i o - t e i e v i s i o n l 1 9 8 4 14-16 S e ite 1 - 1 2 Mitteilung aus dem VSB RFT Industrievertrieb R.u.F. Leipzig Serviceinformationen zuin neuen Auto-Stereo-Kassettenabspielgerät


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    PDF Ge1012 3D24N2Y transistor sc 238 9008 transistor transistor sc 308 SAL 41 transistor 9013 1008 transistor X2C70 transistor D 1002 3D24N

    multi-emitter transistor

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b^E T> • bbSB'ni QDS^bSl TTH « A P X II BLX96 M A IN T E N A N C E T Y P E U.H.F. LINEAR POWER TRANSISTOR N-P-N multi-emitter silicon planar epitaxial transistor primarily for use in linear u.h.f. amplifiers for television transposers and transmitters.


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    PDF BLX96 BLX98 multi-emitter transistor

    k 246 transistor fet

    Abstract: transistor BD 246 transistor BD 110 d 1047 transistor a 1046 transistor
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device


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    PDF BUK7675-55 SQT404 k 246 transistor fet transistor BD 246 transistor BD 110 d 1047 transistor a 1046 transistor

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


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    PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    d 1047 transistor

    Abstract: transistor 1047 transistor 1047 D transistor 1047 voltage rating T2x TRANSISTOR Switching Transistor
    Text: Philips Semiconductors Product specification NPN switching transistor PMST4401 FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and linear amplification,


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    PDF PMST4401 OT323 PMST4403. PMST4401 OT323) LBB26 d 1047 transistor transistor 1047 transistor 1047 D transistor 1047 voltage rating T2x TRANSISTOR Switching Transistor