DIODE 10D2
Abstract: CT60AM-18F 102 TRANSISTOR bipolar transistor DIODE 10D1 IGBT 900v 60a IGBT tail time IGBT CT60AM 10d1
Text: MITSUBISHI MITSUBISHI NchNch IGBT IGBT CT60AM-18F CT60AM-18F INSULATED INSULATED GATE GATE BIPOLAR BIPOLAR TRANSISTOR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ3.2 2.5 1 26 ➃ 20.6MIN. 2 1 ➀ ➁ ➂ 0.5 3 5.45 5.45 4.0 ● VCES . 900V
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CT60AM-18F
20MAX.
DIODE 10D2
CT60AM-18F
102 TRANSISTOR
bipolar transistor
DIODE 10D1
IGBT 900v 60a
IGBT tail time
IGBT CT60AM
10d1
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ct60am18b
Abstract: BR 101 Transistor IGBT 900v 60a CT60AM-18B diode 18B Diode Transistor
Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE CT60AM-18B OUTLINE DRAWING Dimensions in mm φ 3.2 4 wr ¡VCES . 900V ¡IC . 60A
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CT60AM-18B
ct60am18b
BR 101 Transistor
IGBT 900v 60a
CT60AM-18B
diode 18B
Diode Transistor
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CT60AM-18F
Abstract: CT60am IGBT ct60am18f IGBT CT60AM IGBT 900v 60a IGBT 60A IGBT tail time
Text: MITSUBISHI Nch IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ3.2 2.5 1 26 ➃ 20.6MIN. 2 1 ➀ ➁ ➂ 0.5 3 5.45 5.45 ● VCES . 900V
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CT60AM-18F
20MAX.
CT60AM-18F
CT60am IGBT
ct60am18f
IGBT CT60AM
IGBT 900v 60a
IGBT 60A
IGBT tail time
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ct60am
Abstract: resonant inverter CT60AM-18B MITSUBISHI Microwave Transistors IGBT 900v 60a 8600V TRANSISTOR ct60am microwave inverter ic
Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE CT60AM-18B OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ 3.2 2.5 1 26 4 20.6MIN. 2 1 2 1 3 0.5 3 5.45 5.45 4.0 wr ¡VCES . 900V
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CT60AM-18B
20MAX.
ct60am
resonant inverter
CT60AM-18B
MITSUBISHI Microwave Transistors
IGBT 900v 60a
8600V
TRANSISTOR ct60am
microwave inverter ic
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CT60AM-18F
Abstract: IGBT tail time CT60AM-18F-AD MICROWAVE SEMICONDUCTORS CORP PRSS0004ZC-A
Text: CT60AM-18F Insulated Gate Bipolar Transistor REJ03G1374-0200 Previous: MEJ02G0023-0101 Rev.2.00 Jul 07, 2006 Features • VCES : 900 V • IC : 60 A • Integrated fast-recovery diode Appearance Figure RENESAS Package code: PRSS0004ZC-A (Package name: TO-3PL)
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CT60AM-18F
REJ03G1374-0200
MEJ02G0023-0101)
PRSS0004ZC-A
CT60AM-18F
IGBT tail time
CT60AM-18F-AD
MICROWAVE SEMICONDUCTORS CORP
PRSS0004ZC-A
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CT60AM-18C
Abstract: CT60AM-18C-AD MICROWAVE SEMICONDUCTORS CORP
Text: CT60AM-18C Insulated Gate Bipolar Transistor REJ03G0287-0100 Rev.1.00 Aug.20.2004 Features • • • • VCES : 900 V IC : 60 A Integrated fast-recovery diode For voltage-resonance Appearance Figure TO-3PL 2, 4 4 1 : Gate 2 : Collector 3 : Emitter 4 : Collector
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CT60AM-18C
REJ03G0287-0100
CT60AM-18C
CT60AM-18C-AD
MICROWAVE SEMICONDUCTORS CORP
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CT60AM-18C-AD
Abstract: CT60AM-18C
Text: CT60AM-18C Insulated Gate Bipolar Transistor REJ03G0287-0100 Rev.1.00 Aug.20.2004 Features • • • • VCES : 900 V IC : 60 A Integrated fast-recovery diode For voltage-resonance Appearance Figure TO-3PL 2, 4 4 1 : Gate 2 : Collector 3 : Emitter 4 : Collector
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CT60AM-18C
REJ03G0287-0100
CT60AM-18C-AD
CT60AM-18C
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CT60AM-18F
Abstract: IGBT 900v 60a ct60am18F ct60am DSA007480
Text: MITSUBISHI Nch IGBT ARY CT60AM-18F MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ3.2 2.5 1 26 ➃ 20.6MIN.
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CT60AM-18F
20MAX.
CT60AM-18F
IGBT 900v 60a
ct60am18F
ct60am
DSA007480
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1002ds
Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2
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2SC5998"
C5139
2SC5247
2SC5907
2SD1504
2SJ361
2SK439
2SK494
2SK3349
BCR5KM-12L
1002ds
6020v4
TRANSISTOR BJ 131-6
2SC 8550
transistor 2sc1417
HITACHI 08122B
transistor h945
6030v4
2SC 8050
25aaj
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CT60AM18F
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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CT60AM-18F
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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resonant inverter
Abstract: CT60AM-18B HIGH VOLTAGE DIODE for microwave ovens
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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18b diode
Abstract: CT60AM-18B
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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P-Channel mosfet 400v to220
Abstract: IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CT60AM-18B igbt 100a 150v ct60am Transistor Mosfet N-Ch 30V
Text: APEC '99 Trench-Gate Technology for The Next Generation of MOS Power Devices IEEE, APEC Conference 1999 Eric R. Motto Sr. Application Engineer Powerex Inc. Youngwood PA USA APEC '99 Introduction 1. The Trench Gate Structure, Development History and Advantages
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CM600HA-5F
CM450HA-5F
CM350DU-5F
CM200TU-5F
CT60AM-18B
P-Channel mosfet 400v to220
IGBT DRIVE 500V 300A
400V switching transistor 0,3A mosfet
forklift
Microwave Oven Inverter Control IC
apec
CT60AM-18B
igbt 100a 150v
ct60am
Transistor Mosfet N-Ch 30V
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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CT60AM-18F
Abstract: CT60AM-18F-AD PRSS0004ZC-A ct60am18f
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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CT60AM-20
Abstract: CT60AM20 TRANSISTOR ct60am resonant inverter CT60AM
Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-20 RESONANT INVERTER USE CT60AM-20 • VCES . 1000V • 1C . •• ■60A • Integrated Fast Recovery Diode
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CT60AM-20
CT60AM-20
CT60AM20
TRANSISTOR ct60am
resonant inverter
CT60AM
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE Dimensions in mm OUTLINE DRAWING 5 ‘ 2 0.5 • VCES . 900V @ •3 © GATE COLLECTOR EMITTER COLLECTOR
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CT60AM-18B
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 20MAX. « @ LJ/ 0.5 5.45 5.45 • V c e s . 900V o © • le .60A
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CT60AM-18F
20MAX.
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transistor 3005
Abstract: transistor 3005 2 CT60AM-20 transistor FS 20 SM L 3005 TRANSISTOR CT60AM20 transistor TO-220 Outline Dimensions K 4005 transistor resonant inverter ct FS 8201
Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-20 RESONANT INVERTER USE OUTLINE DRAWING Dimensions in mm 5 20MAX. >3.2 «— © 0.5 5.45 5.45 • V ces . 1000V © © © GATE COLLECTOR EMITTER
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CT60AM-20
20MAX.
T0-220S,
MAX240Â
MAX60S
O-220,
O-220FN,
O-220C,
O-220S
transistor 3005
transistor 3005 2
CT60AM-20
transistor FS 20 SM
L 3005 TRANSISTOR
CT60AM20
transistor TO-220 Outline Dimensions
K 4005 transistor
resonant inverter ct
FS 8201
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IGBT 900v 60a
Abstract: CT60AM-18F IGBT 60A CT60am IGBT IGBT tail time ct60am
Text: MITSUBISHI Neh IGBT •§;> >>•+. :W> ^ ,^-s^ CT60AM-18F » ft ftud sxluö\ecl 1 * p- "TVi'S 's JJi, \\flVrts &T s°^ INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING • V c e s . 900V
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CT60AM-18F
00V/jis
-20A/jis
IGBT 900v 60a
CT60AM-18F
IGBT 60A
CT60am IGBT
IGBT tail time
ct60am
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IGBT CT60AM
Abstract: CT60AM-18F
Text: MITSUBISHI Neh IGBT CT60AM-18F -3 ;' \> V.aI i«'ai.Ssv>w8tì' 0 soW INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 20MAX. <>3.2 •— D 0.5 5.45 5.45 • V c e s .900V
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CT60AM-18F
20MAX.
IGBT CT60AM
CT60AM-18F
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