CT60AM18F Search Results

CT60AM18F Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
CT60AM-18F#F00		Renesas Electronics Corporation	Insulated-Gate Bipolar Transistors (IGBT)

CT60AM18F Price and Stock

Filter by Manufacturer


Rochester Electronics LLC CT60AM-18F-G02 N-CHANNEL IGBT, 900V, 60A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CT60AM-18F-G02	Bulk			50	1 - 10 - 100 $6.12 1000 $6.12 10000 $6.12	Buy Now
Renesas Electronics Corporation CT60AM-18F#G02 CT60AM - N-Channel IGBT, 900V, 60A '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	CT60AM-18F#G02		9,469		1	1 $5.88 10 $5.88 100 $5.53 1000 $5 10000 $5	Buy Now

CT60AM18F Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CT60AM-18F		Mitsubishi	Integrated Gate Bipolar Transistor (IGBT) Modules: 250V		Original	PDF
CT60AM-18F		Powerex	INSULATED GATE BIPOLAR TRANSISTOR		Original	PDF
CT60AM-18F		Renesas Technology	Insulated Gate Bipolar Transistor		Original	PDF
CT60AM-18F		Renesas Technology	Insulated Gate Bipolar Transistor		Original	PDF
CT60AM-18F		Mitsubishi	IGBT for Microwave Oven, TO-3PL		Scan	PDF
CT60AM-18F-AD		Renesas Technology	Insulated Gate Bipolar Transistor		Original	PDF

CT60AM18F Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
CT60AM-18F Abstract: IGBT tail time CT60AM-18F-AD MICROWAVE SEMICONDUCTORS CORP PRSS0004ZC-A Text: CT60AM-18F Insulated Gate Bipolar Transistor REJ03G1374-0200 Previous: MEJ02G0023-0101 Rev.2.00 Jul 07, 2006 Features • VCES : 900 V • IC : 60 A • Integrated fast-recovery diode Appearance Figure RENESAS Package code: PRSS0004ZC-A (Package name: TO-3PL)	Original	CT60AM-18F REJ03G1374-0200 MEJ02G0023-0101) PRSS0004ZC-A CT60AM-18F IGBT tail time CT60AM-18F-AD MICROWAVE SEMICONDUCTORS CORP PRSS0004ZC-A	PDF
CT60AM-18F Abstract: CT60am IGBT ct60am18f IGBT CT60AM IGBT 900v 60a IGBT 60A IGBT tail time Text: MITSUBISHI Nch IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ3.2 2.5 1 26 ➃ 20.6MIN. 2 1 ➀ ➁ ➂ 0.5 3 5.45 5.45 ● VCES . 900V	Original	CT60AM-18F 20MAX. CT60AM-18F CT60am IGBT ct60am18f IGBT CT60AM IGBT 900v 60a IGBT 60A IGBT tail time	PDF
1002ds Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2	Original	2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj	PDF
DIODE 10D2 Abstract: CT60AM-18F 102 TRANSISTOR bipolar transistor DIODE 10D1 IGBT 900v 60a IGBT tail time IGBT CT60AM 10d1 Text: MITSUBISHI MITSUBISHI NchNch IGBT IGBT CT60AM-18F CT60AM-18F INSULATED INSULATED GATE GATE BIPOLAR BIPOLAR TRANSISTOR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ3.2 2.5 1 26 ➃ 20.6MIN. 2 1 ➀ ➁ ➂ 0.5 3 5.45 5.45 4.0 ● VCES . 900V	Original	CT60AM-18F 20MAX. DIODE 10D2 CT60AM-18F 102 TRANSISTOR bipolar transistor DIODE 10D1 IGBT 900v 60a IGBT tail time IGBT CT60AM 10d1	PDF
CT60AM-18F Abstract: IGBT 900v 60a ct60am18F ct60am DSA007480 Text: MITSUBISHI Nch IGBT ARY CT60AM-18F MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ3.2 2.5 1 26 ➃ 20.6MIN.	Original	CT60AM-18F 20MAX. CT60AM-18F IGBT 900v 60a ct60am18F ct60am DSA007480	PDF
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
CT60AM18F Abstract: No abstract text available Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog	Original		PDF
CT60AM-18F Abstract: CT60AM-18F-AD PRSS0004ZC-A ct60am18f Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
1002ds Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5	Original	24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as	PDF
CT60AM-18F Abstract: No abstract text available Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog	Original		PDF
IGBT 900v 60a Abstract: CT60AM-18F IGBT 60A CT60am IGBT IGBT tail time ct60am Text: MITSUBISHI Neh IGBT •§;> >>•+. :W> ^ ,^-s^ CT60AM-18F » ft ftud sxluö\ecl 1 * p- "TVi'S 's JJi, \\flVrts &T s°^ INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING • V c e s . 900V	OCR Scan	CT60AM-18F 00V/jis -20A/jis IGBT 900v 60a CT60AM-18F IGBT 60A CT60am IGBT IGBT tail time ct60am	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI Neh IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 20MAX. « @ LJ/ 0.5 5.45 5.45 • V c e s . 900V o © • le .60A	OCR Scan	CT60AM-18F 20MAX.	PDF
IGBT CT60AM Abstract: CT60AM-18F Text: MITSUBISHI Neh IGBT CT60AM-18F -3 ;' \> V.aI i«'ai.Ssv>w8tì' 0 soW INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 20MAX. <>3.2 •— D 0.5 5.45 5.45 • V c e s .900V	OCR Scan	CT60AM-18F 20MAX. IGBT CT60AM CT60AM-18F	PDF