TRANSISTOR CROSSOVER Search Results

TRANSISTOR CROSSOVER Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR CROSSOVER Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
D42DG Abstract: BUD43D transistor 369D BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic	Original	BUD42D BUD42D BUD42D/D D42DG BUD43D transistor 369D BUD42DT4 MPF930 MTP8P10 MUR105	PDF
npn transistor 400 volts.10 amperes Abstract: No abstract text available Text: BUD43D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability The BUD43D2 is a state–of–the–art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally	Original	BUD43D2 BUD43D2: r14525 BUD43D2/D npn transistor 400 volts.10 amperes	PDF
MTP12N10 Abstract: MTP8P10 MUR105 BUH150 MJE210 MPF930 Text: ON Semiconductort BUH150 SWITCHMODEt NPN Silicon Planar Power Transistor POWER TRANSISTOR 15 AMPERES 700 VOLTS 150 WATTS The BUH150 has an application specific state–of–art die designed for use in 150 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large	Original	BUH150 BUH150 r14525 BUH150/D MTP12N10 MTP8P10 MUR105 MJE210 MPF930	PDF
Untitled Abstract: No abstract text available Text: ON Semiconductor BUH51 SWITCHMODEt NPN Silicon Planar Power Transistor POWER TRANSISTOR 3 AMPERES 800 VOLTS 50 WATTS The BUH51 has an application specific state−of−art die designed for use in 50 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large	Original	BUH51 BUH51	PDF
Untitled Abstract: No abstract text available Text: ON Semiconductor BUH100 SWITCHMODEt NPN Silicon Planar Power Transistor POWER TRANSISTOR 10 AMPERES 700 VOLTS 100 WATTS The BUH100 has an application specific state−of−art die designed for use in 100 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large	Original	BUH100 BUH100	PDF
MJ10100 Abstract: all transistor transistor Common Base configuration AN875 transistor on semiconductor AN875 K.S. Terminals USE OF TRANSISTOR MJ10021 fastest finger first Text: AN875/D Power Transistor Safe Operating Area Special Considerations for Switching Power Supplies http://onsemi.com Prepared by: Warren Schultz Applications Engineering APPLICATION NOTE Introduction The power transistor, in today’s switching power supply,	Original	AN875/D r14525 MJ10100 all transistor transistor Common Base configuration AN875 transistor on semiconductor AN875 K.S. Terminals USE OF TRANSISTOR MJ10021 fastest finger first	PDF
MJE18006 Abstract: 221D MJE210 MJF18006 MPF930 MTP8P10 MUR105 Text: MOTOROLA Order this document by MJE18006/D SEMICONDUCTOR TECHNICAL DATA MJE18006 * MJF18006 *  Data Sheet SWITCHMODE Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 6.0 AMPERES	Original	MJE18006/D* MJE18006/D MJE18006 221D MJE210 MJF18006 MPF930 MTP8P10 MUR105	PDF
Untitled Abstract: No abstract text available Text: ON Semiconductor MJE18002 * SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 50 WATTS The MJE18002 have an applications specific state−of−the−art die	Original	MJE18002 O-220 MPF930 MUR105 MPF930 MJE210 MTP12N10 MJE18002	PDF
SUS CIRCUIT Abstract: MJ13333 mj1333 pswt an222 Text: 1165908 SwitchmodeTM series NPN silicon power transistor. The MJ13333 transistor is designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated SWITCHMODE applications.	Original	MJ13333 200ns O-204 SUS CIRCUIT mj1333 pswt an222	PDF
MJE13002 Abstract: mje13002 to92 Text: UNISONIC TECHNOLOGIES CO., LTD MJE13002 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13002 designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly	Original	MJE13002 MJE13002 MJE13002L-x-T92-B MJE13002G-x-T92-B MJE13002L-xat QW-R204-014 mje13002 to92	PDF
mje13002 to92 Abstract: MJE13002 equivalent mje13002 OF transistor 2N2222 to-92 MJE13002 transistor MJE13002G MJE-13002 2N2222 NPN Transistor to 92 Text: UNISONIC TECHNOLOGIES CO., LTD MJE13002 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13002 designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly	Original	MJE13002 MJE13002 MJE13002L-x-T92-B MJE13002G-x-T92-B MJE13002L-x-T92-K QW-R204-014 mje13002 to92 MJE13002 equivalent OF transistor 2N2222 to-92 MJE13002 transistor MJE13002G MJE-13002 2N2222 NPN Transistor to 92	PDF
BUK856-400IZ Abstract: TP500 Text: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor Protected Logic-Level IGBT GENERAL DESCRIPTION Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope suitable for surface mount applications. It is intended for	Original	OT404 BUK866-400 BUK856-400IZ TP500	PDF
MJE18006 Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105 Text: ON Semiconductort MJE18006 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 100 WATTS The MJE18006 has an applications specific state–of–the–art die	Original	MJE18006 MJE18006 r14525 MJE18006/D MJE210 MPF930 MTP12N10 MTP8P10 MUR105	PDF
MJE18006 Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105 si 625 Text: ON Semiconductor MJE18006 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 100 WATTS The MJE18006 has an applications specific state–of–the–art die	Original	MJE18006 MJE18006 r14525 MJE18006/D MJE210 MPF930 MTP12N10 MTP8P10 MUR105 si 625	PDF

BUT92 Abstract: No abstract text available Text: BUT92 FAST-SWITCHING POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR hFE > 10 AT IC =35A HIGH EFFICIENCY SWITCHING VERY LOW SATURATION VOLTAGE RECTANGULAR SAFE OPERATING AREA WIDE ACCIDENTAL OVERLOAD AREA	Original	BUT92 BUT92	PDF
2SD418 Abstract: TIP33C equivalent k 3436 transistor IR647 TIP121 transistor buv18a BU108 2SC1086 tip122 motor control 2N6023 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10000  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The MJ10000 Darlington transistor is designed for high–voltage, high–speed,	Original	MJ10000 204AA TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SD418 TIP33C equivalent k 3436 transistor IR647 TIP121 transistor buv18a BU108 2SC1086 tip122 motor control 2N6023	PDF
BUH50 Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105 Text: ON Semiconductort BUH50 SWITCHMODEt NPN Silicon Planar Power Transistor POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTS The BUH50 has an application specific state–of–art die designed for use in 50 Watts HALOGEN electronic transformers and SWITCHMODE applications.	Original	BUH50 BUH50 r14525 BUH50/D MJE210 MPF930 MTP12N10 MTP8P10 MUR105	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by BU806/D SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal	OCR Scan	BU806/D BU806 -220A 21A-06 O-220AB	PDF
BUH50 Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105 Text: ON Semiconductor BUH50 SWITCHMODEt NPN Silicon Planar Power Transistor POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTS The BUH50 has an application specific state–of–art die designed for use in 50 Watts HALOGEN electronic transformers and SWITCHMODE applications.	Original	BUH50 BUH50 r14525 BUH50/D MJE210 MPF930 MTP12N10 MTP8P10 MUR105	PDF
F18002 Abstract: 3704 transistor WE VQE 11 E Motorola Bipolar Power Transistor Data FR 3708 e180 MJF18002 221A-06 221D MJE18002 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet SW ITCHMODE™ M JE 18002* M JF18002* NPN Bipolar Power Transistor For Switching Power Supply Applications 'M otorola Preferred Dsvlce POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS	OCR Scan	MJE/MJF18002 O-220 O-220 MJF18002, 15to20 AN1040. F18002 3704 transistor WE VQE 11 E Motorola Bipolar Power Transistor Data FR 3708 e180 MJF18002 221A-06 221D MJE18002	PDF
digital phase shifter mhz Abstract: fet alternator regulator circuit 54-PIN ISO7637 MC33937 MUR120 Text: Freescale Semiconductor Advance Information Document Number: 33937 Rev 3.0, 11/2008 Three Phase Field Effect Transistor Pre-driver 33937 The 33937 is a Field Effect Transistor FET pre-driver designed for three phase motor control and similar applications. The integrated	Original		PDF
BUV298V Abstract: No abstract text available Text: BUV298V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCE	Original	BUV298V BUV298V	PDF
bul45d2g Abstract: BUL45D2 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 Text: BUL45D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network The BUL45D2G is state−of−art High Speed High gain BiPolar transistor H2BIP . High dynamic characteristics and lot−to−lot	Original	BUL45D2G BUL45D2G BUL45D2/D BUL45D2 MJE210 MPF930 MTP12N10 MTP8P10 MUR105	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MJE18002/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M JE 18002* M JF 18002* SWITCH MODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications ‘ Motorola Preferred Device POWER TRANSISTOR	OCR Scan	MJE18002/D MJE/MJF18002 221D-02 E69369	PDF

TRANSISTOR CROSSOVER Search Results

TRANSISTOR CROSSOVER Result Highlights (5)

TRANSISTOR CROSSOVER Datasheets Context Search

D42DG

npn transistor 400 volts.10 amperes

MTP12N10

Untitled

Untitled

MJ10100

MJE18006

Untitled

SUS CIRCUIT

MJE13002

mje13002 to92

BUK856-400IZ

MJE18006

MJE18006

BUT92

2SD418

BUH50

Untitled

BUH50

F18002

digital phase shifter mhz

BUV298V

bul45d2g

Untitled