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    TRANSISTOR CR SOT23 Search Results

    TRANSISTOR CR SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR CR SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sot-23 npn marking code cr

    Abstract: sot23 marking CR CR SOT-23 sot23 code CR cq 037 G sot-23 MARKING CODE CR 2SC2411 sot23 marking CR A J V D transistor SOT23 CR transistor marking 04
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2411 FEATURES Pb z Power dissipation: PCM=200mW Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor SOT-23 ORDERING INFORMATION Type No. 2SC2411 Marking Package Code


    Original     		PDF 2SC2411 200mW OT-23 BL/SSSTC097 sot-23 npn marking code cr sot23 marking CR CR SOT-23 sot23 code CR cq 037 G sot-23 MARKING CODE CR 2SC2411 sot23 marking CR A J V D transistor SOT23 CR transistor marking 04

    Untitled

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2411 FEATURES z Power dissipation: PCM=200mW z High ICM MAX. ,I CM(MAX.)=0.5mA. z Low VCE(sat). z Complements the 2SA1036. Pb Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor


    Original     		PDF 2SC2411 200mW 2SA1036. OT-23 BL/SSSTC097

    ZVN4306A TO-5

    Abstract: ZTX618 power supply IRF830 APPLICATION mosfet driver with npn transistor high gain PNP POWER TRANSISTOR SOT23 npn high voltage transistor 500v sot23 zvn4306 AN18 irf830 datasheet pnp 500v
    Text: Application Note 18 Issue 1 March 1996 Power MOSFET Gate Driver Circuits using High Current Super-β Transistors 6A Pulse Rated SOT23 Transistors for High Frequency MOSFET Interfacing Neil Chadderton The pow er M OS F ET is c omm only presented and regarded as a voltage


    Original     		PDF 100mA/div. 50ns/div. x15mm FMMT618/718 700mW. 500mA/div. 100ns/div. ZVN4306A TO-5 ZTX618 power supply IRF830 APPLICATION mosfet driver with npn transistor high gain PNP POWER TRANSISTOR SOT23 npn high voltage transistor 500v sot23 zvn4306 AN18 irf830 datasheet pnp 500v

    Untitled

    Abstract: No abstract text available
    Text: ZXSC400 LED DRIVER BOOST CONVERTER DESCRIPTION The ZXSC400 is a voltage m ode boost converter in the SOT23-6 package. Its low feedback voltage allow s the current in a chain of LEDs to be set and accurately m onitored w ith a single resistor giving m inim al losses. Its excellent load and line


    Original     		PDF ZXSC400 ZXSC400 OT23-6 OT23-6

    transistor C3866

    Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
    Text: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)


    Original     		PDF

    CR SOT23

    Abstract: SOT-23 CP CR SOT-23
    Text: 2SC2411 SOT-23 Transistor NPN 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 Features — High ICMax.ICMax. = 0.5mA — Low VCE(sat).Optimal for low voltage operation. — Complements the 2SA1036 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value


    Original     		PDF OT-23 2SC2411 OT-23 2SA1036 100mA 500mA 100MHz CR SOT23 SOT-23 CP CR SOT-23

    transistor smd marking CQ

    Abstract: transistor smd marking CR transistor cr marking transistor smd marking CQ MARKING SMD npn TRANSISTOR transistor smd cr transistor CR NPN 2SC2411K
    Text: Transistors SMD Type Medium Power Transistor 2SC2411K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 NPN silicon transistor 0.55 Low VCE sat . Optimal for low voltage operation. +0.1 1.3-0.1 +0.1 2.4-0.1 High ICMax. ICMax. = 0.5A 2 +0.1 0.95-0.1


    Original     		PDF 2SC2411K OT-23 100mA 500mA/50mA -20mA, 100MHz transistor smd marking CQ transistor smd marking CR transistor cr marking transistor smd marking CQ MARKING SMD npn TRANSISTOR transistor smd cr transistor CR NPN 2SC2411K

    Untitled

    Abstract: No abstract text available
    Text: Contents Features . 1 Applications. 1 Block Diagram . 2


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Q 0 E S 3 C1S TOM • APX ^53^31 Philips Semiconductors N AUER PHILIPS / D I S CR E T E b?E Product specification J> PNP 5 GHz wideband transistor DESCRIPTION £ BFT93 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF


    OCR Scan     		PDF BFT93 BFR93 BFR93A.

    BF747

    Abstract: MBB400 DB64 transistor HJ 388
    Text: Philips Sem iconductors — bb53^31 00E4bfll l ? 5 N AMER P H IL IPS /D IS CR ET E MAPX b?E Product specification NPN 1 GHz wideband transistor FEATURES £ BF747 PINNING • Stable oscillator operation PIN DESCRIPTION Code: E15 • High current gain • Good thermal stability.


    OCR Scan     		PDF bb53-J31 00E4bà BF747 BF747 MBB400 DB64 transistor HJ 388

    transistor E 13009

    Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009
    Text: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d | ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ | «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4I26 2N4400 2N4401 transistor E 13009 transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009

    BFR53

    Abstract: transistor 1061 transistor h 1061
    Text: • 1.1,S3 S 31 00251Mb MS3 H A P X Philips Semiconductors Product specification AflER P H I L I P S / D I S C R E T E b7E D NPN 2 GHz wideband transistor DESCRIPTION BFR53 PINNING NPN transistor in a plastic SOT23 envelope. It is intended for application In thick and thin-film


    OCR Scan     		PDF 00251Mb BFR53 bbS3T31 BFR53 transistor 1061 transistor h 1061

    transistor cross reference

    Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
    Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: bbS3^31 002514b MS3 H A P X Philips Semiconductors N AKER PHILIPS/DISCRETE Product specification b7E D NPN 2 GHz wideband transistor DESCRIPTION c BFR53 PINNING NPN transistor in a plastic SOT23 envelope. It is intended for application in thick and thin-film


    OCR Scan     		PDF 002514b BFR53 0D251SD bbS3T31

    MMBA813S3

    Abstract: motorola opto MMBA813S2 MMBA813S4
    Text: 34 MOTOROLA SC i D I O D E S / O P T O 6367255 MOTOROLA SC Î F |t . 3 b ? a S S 003fl27t. 0 34C DIO DES/O PTO 38276 T - Z 'T - t f SOT23 (continued) MMBA813S2,3,4 d e v ic e no . SMALL-SIGNAL PNP TRANSISTOR TOP VIEW C | • Designed for audio amplifier and driver applications.


    OCR Scan     		PDF 3b75SS 03flS7t, MMBA813S2 MMBA813S3 MMBA813S4 motorola opto

    30255

    Abstract: qSOT-23
    Text: M O T O R O L A SC i D I O D E S / O P T O } 6 3 6 7 2 5 5 M O T O R O L A SC 34 DF|b3b72SS DIODES/OPTO 34C 003Ô2SS q 30255 SOT23 (continued) BCW66F,G,H DEVICE NO. SMALL-SIGNAL NPN TRANSISTOR TOP VIEW C I I • *— ' - t =i B Device D e s ig n e d fo r lo w -freq u en cy d river s ta g e an d switching


    OCR Scan     		PDF b3b72SS BCW66F BCW66G BCW66H b3b725S 30255 qSOT-23

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR FMMT413 PROVISIONAL DATASHEET ISSU E 2 - MARCH 1996 FEATURES * A v a la n c h e m o d e operation * 5 0 A Peak a va la n ch e current * L o w inductance p a cka gin g A P P L IC A T IO N S * L a se r L E D d riv e rs


    OCR Scan     		PDF FMMT413

    Untitled

    Abstract: No abstract text available
    Text: b b 5 3 ci31 002S3bb 003 H A P X Philips Semiconductors Product specification b?E D N AMER PH ILI PS/ DI SC R ETE £ NPN 5 GHz wideband transistor FEATURES • BFT25A PINNING Low current consumption 100 p A - 1 mA • Low noise figure • Gold metallization ensures


    OCR Scan     		PDF bb53c 002S3bb BFT25A BFT25A

    Untitled

    Abstract: No abstract text available
    Text: March 1993 2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode field effect transistors are produced using National’s very high cell density third generation DMOS technology. These products have been


    OCR Scan     		PDF 2N7000/2N7002/NDF7000A/NDS7002A

    Untitled

    Abstract: No abstract text available
    Text: KSC3123 NPN EPITAXIAL SILICON TRANSISTOR MIXER FOR VHF TV TUNER SOT-23 Gce = 2 3dB Cre - 0 . 4 p F ABSOLUTE MAXIMUM RATINGS T a = 2 5 ° o Unit Symbol Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current


    OCR Scan     		PDF KSC3123 OT-23 200MHz, 260MHz

    Untitled

    Abstract: No abstract text available
    Text: b?E D Philips Semiconductors Datasheet status Product specification date of issue July 1993 • bbS3^31 0 0 23 ^1 ^ TTfl ■ APX BSS123 NAf1ER philips/1>;,:scre:te: N-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES • Direct interface to C-MOS, TTL,


    OCR Scan     		PDF BSS123

    NPN transistor SST 117

    Abstract: transistor npn Epitaxial Silicon SST 117 S 9018 H 331 transistor Transistor MJE 5331 bfr540 equivalent transistor 9018 NPN BFR505 BFR540 URA698 transistor bf 760
    Text: P h iJ ip ^ e m lc o n d u c t o r ^ ^ ^ ^ ^ ^ b b 5 3 T 3 lD □ 3 n b^ SM7 M AP X Product specification NPN 9 GHz wideband transistor _ FEATURES ^ i N AUER BFR540 P H IL IP S /D IS C R E T E bTE PINNING • High power gain • Low noise figure PIN DESCRIPTION


    OCR Scan     		PDF BFR540 BFR540 NPN transistor SST 117 transistor npn Epitaxial Silicon SST 117 S 9018 H 331 transistor Transistor MJE 5331 bfr540 equivalent transistor 9018 NPN BFR505 URA698 transistor bf 760

    IRF 4145

    Abstract: KSC2756 marking uma samsung tv gee transistor
    Text: AMSUN6 SEMICONDUCTOR INC KSC2756 14E D | 7^4142 QOOb^k 2 | NPN EPITAXIAL SILICON TRANSISTOR T -3 1 -1 5 MIXER FOR VHF TV TUNER SOT-23 • HIGH Gee lÿp. 23d8 ABSOLUTE MAXIMUM RATINGS (T8=25°C) Characteristic • Rating Symbol Collector-Base Voltage Coiector-Emitter Voltage


    OCR Scan     		PDF KSC2756 T-31-15 OT-23 V300M 400MHz 910mA 400MHz 300MHz 200MH 100MHz IRF 4145 marking uma samsung tv gee transistor

    Untitled

    Abstract: No abstract text available
    Text: KSC2734 NPN EPITAXIAL SILICON TRANSISTOR MIXER, OSC. FOR UHF TV TUNER SOT-23 High fT: 3.5GHz TYP ABSOLUTE MAXIMUM RATINGS (Ta= 25°C ) Characteristic Collector-Base Voltage Collector-Emltter Voltage Emitter-Base Voltage Collector Current (DC) Collector Dissipation


    OCR Scan     		PDF KSC2734 OT-23 D0247Ã DD24765