TRANSISTOR COMMON EMITTER CONFIGURATION Search Results

TRANSISTOR COMMON EMITTER CONFIGURATION Result Highlights (5)

Part	Manufacturer	Description
SSM10N961L	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET x 2, Common drain, VSSS=30 V, 0.0128 Ω@10V, TCSPAG-341501
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini

TRANSISTOR COMMON EMITTER CONFIGURATION Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
c 1685 transistor Abstract: 1685 transistor transistor c 1685 1615mhz PH1617-60 Text: Wireless Power Transistor, 60 Watts, 1615 - 1685 MHz PH1617-60 PH1617-60 Wireless Power Transistor 60 Watts, 1615 - 1685 MHz 1 Features • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Emitter Configuration Diffused Emitter Ballasting Resistors	Original	PH1617-60 PH1617-60 1615MHz 1685MHz c 1685 transistor 1685 transistor transistor c 1685 1615mhz	PDF
Untitled Abstract: No abstract text available Text: CA3081, CA3082 Semiconductor September 1998 General Purpose High Current NPN Transistor Arrays 480.4 Features • CA3081 - Common Emitter Array CA3081 and CA3082 consist of seven high current to 100mA silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter	OCR Scan	CA3081, CA3082 CA3081 CA3082 100mA)	PDF
ca3081 Abstract: ca3082 common collector npn array transistor Common collector configuration F16 DIODE 3082 Text: 33 CA3081, CA3082 ^ «f ":.l! ; General Purpose High Current NPN Transistor Arrays " Features Description • CA3081 - Common Emitter Array CA3081 and CA3082 consist of seven high current to 100mA silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter	OCR Scan	CA3081, CA3082 CA3081 CA3082 100mA) common collector npn array transistor Common collector configuration F16 DIODE 3082	PDF
F300 Abstract: No abstract text available Text: CW Power Transistor A fa PH0303-8 8.0 Watts, 300-325 MHz Features • • • • • • • Outline Drawing NPN Silicon Power Transistor Common Emitter Configuration Class AB Broadband Operation Diffused Emitter Ballasting Resistors Gold Metallization System	OCR Scan	PH0303-8 5b422D5 0DD1172 F300	PDF
100 N 37 Abstract: No abstract text available Text: CW Power Transistor PH0303-37 37 Watts, 300-325 MHz Features Outline Drawing • NPN Silicon Power Transistor • Common Emitter Configuration • Class AB Linear Operation • Diffused Emitter Ballasting Resistors • Gold Metallization System • Internal Input Impedance Matching	OCR Scan	PH0303-37 SL422DS 100 N 37	PDF
Untitled Abstract: No abstract text available Text: PH1617-60 Wireless Power Transistor 60W, 1615-1685 MHz M/A-COM Products Released, 05 Sep 07 Package Outline Features • • • • • • • NPN Silicon microwave power transistor Common emitter configuration Diffused emitter ballasting resistors Gold metallization system	Original	PH1617-60 -28dBc	PDF
transistor f20 Abstract: No abstract text available Text: Aß Oscillator Power Transistor PH2022-1OSC 1 Watt, 2.00-2.20 GHz Outline Drawing Features • • • • • • • • NPN Silicon Microwave Power Transistor Common Emitter Configuration Designed for S-Band Applications Interdigitated Geometry Diffused Emitter Ballasting Resistors	OCR Scan	PH2022-1OSC transistor f20	PDF
13MM Abstract: 817j18 Text: I .-em _- an AMP company Linear Power Transistor, 40W 850 - 1450 MHz Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class AB Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System	Original		PDF
transistor Common emitter configuration Abstract: PH1617-60 Text: PH1617-60 Wireless Power Transistor 60W, 1615-1685 MHz M/A-COM Products Released, 05 Sep 07 Package Outline Features • • • • • • • NPN Silicon microwave power transistor Common emitter configuration Diffused emitter ballasting resistors Gold metallization system	Original	PH1617-60 -28dBc transistor Common emitter configuration PH1617-60	PDF
MS1409 Abstract: No abstract text available Text: MS1409 RF & MICROWAVE TRANSISTOR VHF COMMUNICATIONS Features • • • • • 175 MHz 28 VOLTS POUT = 2.5 W GP = 10 dB MINIMUM COMMON EMITTER CONFIGURATION 1. Emitter 2. Base 3. Collector DESCRIPTION: The MS1409 is a NPN silicon transistor designed for high	Original	MS1409 MS1409	PDF
vp 3082 Abstract: CA3081 CA3082 Text: CA3081, CA3082 M A ßE»» General Purpose High Current NPN Transistor Arrays November 1996 Features D escription • CA3081 - Common Emitter Array CA3081 and CA3082 consist of seven high current to 100mA silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter	OCR Scan	CA3081, CA3082 CA3081 CA3082 100mA) vp 3082	PDF
ARC-182 Abstract: transistor Common emitter configuration PHOI Text: an AMP company CW Power Transistor, 30 - 400 MHz 85W PHOI 04-85 v2.00 Features NPN Silicon Power Transistor Common Emitter Configuration Class AB Broadband Operation 85 Watt PEP Output Diffused Emitter Ballasting Resistors Gold Metallization System Proven in Thousands of ARC-182 Airborne Radios	Original	ARC-182 transistor Common emitter configuration PHOI	PDF
ARC-182 Abstract: transistor Common emitter configuration transistor t 04 27 PHOI an/ARC-182 Text: an AMP company CW Power Transistor, 30 - 400 MHz 16W PHOI 04-I 6 Features NPN Silicon Power Transistor Common Emitter Configuration Class AB Broadband Operation 16 Watt PEP Output Diffused Emitter Ballasting Resistors Gold Metallization System Prqqn in Thousands of ARC-182 Airborne Radios	Original	ARC-182 37HERWISE transistor Common emitter configuration transistor t 04 27 PHOI an/ARC-182	PDF
13MM Abstract: PH3134-2OL transistor f20 PH3134 Text: Radar Pulsed Power Transistor, 2OW, 300~s Pulse, 10% Duty PH3134-2OL 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors	Original	PH3134-2OL 13MM PH3134-2OL transistor f20 PH3134	PDF

PH0810-15 Abstract: No abstract text available Text: PH0810-15 Wireless Power Transistor 15W, 850-960MHz, 26V Features • Designed for linear amplifier applications • Class AB: -30 dBc typ. 3rd IMD at 15 W PEP • Common emitter configuration • Internal input impedance matching • Diffused emitter ballasting	Original	PH0810-15 850-960MHz, PH0810-15	PDF
TRANSISTOR Z4 Abstract: No abstract text available Text: an AMP company Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty PHI 214-6M 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors	Original	214-6M TRANSISTOR Z4	PDF
Untitled Abstract: No abstract text available Text: AjtÁ CW Power Transistor PH2323-6 Preliminary 6.0 Watts, 2.30 GHz Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • Interdigitated Geometry • Diffused Emitter Ballasting Resistors	OCR Scan	PH2323-6 513MM) 5b422D5 00013D3	PDF
PH1214-2M Abstract: .15 j63 1.5 j63 1035 transistor Text: an AMP company Radar Pulsed Power Transistor, 2W, loops Pulse, 10% Duty 1.2 - 1.4 GHz PH1214-2M v2.00 Features c_I- NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors	Original	PH1214-2M 214-2M PH1214-2M .15 j63 1.5 j63 1035 transistor	PDF
J37 transistor Abstract: transistor j8 transistor j37 J370 capacitor J37 PH3134-9L transistor j145 Text: = - an AMP company Radar Pulsed Power Transistor, SW, 300~s Pulse, 10% Duty Pti3134-9L 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry Diffused Emitter Ballasting Resistors	Original	Pti3134-9L t23MM, J37 transistor transistor j8 transistor j37 J370 capacitor J37 PH3134-9L transistor j145	PDF
13MM Abstract: PH1214-4M Text: =7 an AMP comDanv = E Radar Pulsed Power Transistor, 4W, loops Pulse, 10% Duty PH1214-4M 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors	Original	PH1214-4M TT50M5OA 2052-56X-02 13MM PH1214-4M	PDF
MS1409 Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1409 RF & MICROWAVE TRANSISTOR VHF COMMUNICATIONS Features • • • • • 175 MHz 28 VOLTS POUT = 2.5 W GP = 10 dB MINIMUM COMMON EMITTER CONFIGURATION 1. Emitter	Original	MS1409 MS1409	PDF
7107 ic Abstract: 7107 7107 datasheet 7107 GP IC 7107 MS1649 Text: MS1649 RF & MICROWAVE TRANSISTORS UHF CLASS C MOBILE APPLICATIONS Features • • • • 470 MHz POUT = 3W GP = 9.5dB MINIMUM COMMON EMITTER CONFIGURATION 1. Emitter 2. Base 3. Collector DESCRIPTION: TO-39 The MS1649 is a 12.5V epitaxial NPN planar transistor	Original	MS1649 MS1649 100mA 470MHz 7107 ic 7107 7107 datasheet 7107 GP IC 7107	PDF
BFY88 Abstract: Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288 Text: TELEFUNKEN ELECTRONIC m ilp y M IM electronic Ö1C D • fi^SOQRb 0005332 b 'T- BFY 88 Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: VHF amplifier stages, pre-stages In common emitter configuration Oscillating mixer stages in common base configuration	OCR Scan	i200Rb D0DS332 ft-11 569-GS 000s154 hal66 if-11 BFY88 Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288	PDF
Untitled Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1409 RF & MICROWAVE TRANSISTOR VHF COMMUNICATIONS )HDWXUHV • • • • • 175 MHz 28 VOLTS POUT = 2.5 W GP = 10 dB MINIMUM COMMON EMITTER CONFIGURATION 1. Emitter	Original	MS1409 MS1409	PDF

TRANSISTOR COMMON EMITTER CONFIGURATION Search Results

TRANSISTOR COMMON EMITTER CONFIGURATION Result Highlights (5)

TRANSISTOR COMMON EMITTER CONFIGURATION Datasheets Context Search

c 1685 transistor

Untitled

ca3081

F300

100 N 37

Untitled

transistor f20

13MM

transistor Common emitter configuration

MS1409

vp 3082

ARC-182

ARC-182

13MM

PH0810-15

TRANSISTOR Z4

Untitled

PH1214-2M

J37 transistor

13MM

MS1409

7107 ic

BFY88

Untitled