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    TRANSISTOR COMMON BASE CONNECTION Search Results

    TRANSISTOR COMMON BASE CONNECTION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM10N961L Toshiba Electronic Devices & Storage Corporation N-ch MOSFET x 2, Common drain, VSSS=30 V, 0.0128 Ω@10V, TCSPAG-341501 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR COMMON BASE CONNECTION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: EMC5DXV5T1, EMC5DXV5T5 Preferred Devices Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com 3 The BRT Bias Resistor Transistor contains a single transistor with


    Original     		PDF OT-553

    Untitled

    Abstract: No abstract text available
    Text: EMC2DXV5T1, EMC5DXV5T1 Preferred Devices Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com 3 The BRT Bias Resistor Transistor contains a single transistor with


    Original     		PDF OT-553

    EMC3DXV5T5

    Abstract: No abstract text available
    Text: EMC3DXV5T1, EMC3DXV5T5 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com 3 The BRT Bias Resistor Transistor contains a single transistor with


    Original     		PDF OT-553 EMC3DXV5T5

    marking u5

    Abstract: No abstract text available
    Text: EMC5DXV5T1, EMC5DXV5T5 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com 3 The BRT Bias Resistor Transistor contains a single transistor with


    Original     		PDF OT-553 marking u5

    SMD310

    Abstract: No abstract text available
    Text: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 1 R1 The BRT Bias Resistor Transistor contains a single transistor with


    Original     		PDF r14525 SMD310

    free transistor equivalent book

    Abstract: RESISTOR footprint dimension all ic datasheet in one pdf file ic 4000 Aluminium Housed high Power Resistor high gain low voltage PNP transistor transistor equivalent table transistor equivalent book 1000 volt pnp transistor network resistor
    Text: EMC2DXV5T1, EMC3DXV5T1, EMC5DXV5T1 Preferred Devices Dual Common Base−Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 2 R1 The BRT Bias Resistor Transistor contains a single transistor with


    Original     		PDF OT-553 free transistor equivalent book RESISTOR footprint dimension all ic datasheet in one pdf file ic 4000 Aluminium Housed high Power Resistor high gain low voltage PNP transistor transistor equivalent table transistor equivalent book 1000 volt pnp transistor network resistor

    UMC3NT1

    Abstract: SMD310
    Text: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 1 R1 The BRT Bias Resistor Transistor contains a single transistor with


    Original     		PDF r14525 UMC3NT1 SMD310

    Untitled

    Abstract: No abstract text available
    Text: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base−Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 1 R1 The BRT Bias Resistor Transistor contains a single transistor with


    Original     		PDF OT-353

    Untitled

    Abstract: No abstract text available
    Text: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 1 R1 The BRT Bias Resistor Transistor contains a single transistor with


    Original     		PDF r14525

    norton amplifier

    Abstract: LM3900 VCO jfet discrete differential transistor jfet cascode internal structure of ic lm3900 ULTRA HIGH SPEED FREQUENCY DIVIDER LM359 operational amplifier discrete schematic norton op. amp Designing Type II Compensation for Current Mode
    Text: National Semiconductor Application Note 278 Timothy T. Regan September 1981 Why Another Norton Amplifier? there is no Miller effect on the collector-to-base capacitance of the input transistor. Also, there is no collector-to-emitter parasitic feedback in the common base configured transistor, Q2, so the high frequency signal appearing at the output


    Original     		PDF AN-278 norton amplifier LM3900 VCO jfet discrete differential transistor jfet cascode internal structure of ic lm3900 ULTRA HIGH SPEED FREQUENCY DIVIDER LM359 operational amplifier discrete schematic norton op. amp Designing Type II Compensation for Current Mode

    SMD310

    Abstract: SOT353 U1
    Text: UMA4NT1, UMA6NT1 Preferred Devices Dual Common Emitter Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF r14525 SMD310 SOT353 U1

    HFA08TA60C

    Abstract: No abstract text available
    Text: HFA08TA60CPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 2 x 4 A FEATURES • • • • • • • Base Common Cathode • • • • • Anode 2 1 Common 3 Cathode RoHS* COMPLIANT Reduced RFI and EMI Reduced power loss in diode and switching transistor


    Original     		PDF HFA08TA60CPbF HFA08TA60C 11-Mar-11

    M142

    Abstract: SD1414-12
    Text: SD1414-12  RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS PRELIMINARY DATA • ■ ■ ■ 960 MHz 13.5 VOLTS COMMON BASE POUT = 40 W MIN. WITH 4.3 dB gain DESCRIPTION The SD1414-12 is a 13.5 V Class C Epitaxial silicon NPN planar transistor designed for


    Original     		PDF SD1414-12 SD1414-12 M142

    M142

    Abstract: SD1414-12
    Text: SD1414-12 RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS PRELIMINARY DATA • ■ ■ ■ 960 MHz 13.5 VOLTS COMMON BASE POUT = 40 W MIN. WITH 4.3 dB gain DESCRIPTION The SD1414-12 is a 13.5 V Class C Epitaxial silicon NPN planar transistor designed for


    Original     		PDF SD1414-12 SD1414-12 M142

    SD1897

    Abstract: No abstract text available
    Text: SD1897 RF & MICROWAVE TRANSISTORS 1.65 GHz SATCOM APPLICATIONS . . . 1.65 GHz 28 VOLTS CLASS C OPERATION COMMON BASE POUT = 10 W MIN. WITH 11.0 dB GAIN .250 x .320 2LFL M170 epoxy sealed ORDER CODE SD1897 BRANDING 1897 PIN CONNECTION DESCRIPTION The SD1897 is a 28 V Class C silicon NPN transistor designed for INMARSAT and other 1.65 GHz


    Original     		PDF SD1897 SD1897

    PS9634

    Abstract: PS9634L power transistor vo1l
    Text: POWER TRANSISTOR DRIVING BASE AMPLIFIER BUILT-IN TYPE OPTOCOUPLER PS9634 PS9634L FEATURES DESCRIPTION • HIGH INSTANTANEOUS COMMON MODE REJECTION VOLTAGE CMH = -1000 V/µs MIN, CML = 1000 V/µs MIN The PS9634 is an optical linkage device mounting a GaAs infrared LED on the light emitting side input side , and a


    Original     		PDF PS9634 PS9634L PS9634 PS9634L 24-Hour power transistor vo1l

    Untitled

    Abstract: No abstract text available
    Text: MS3022 1 Watts, 28 Volts Class-C, CW 1.0 to 2.0 GHz GENERAL DESCRIPTION The MS3022 is a common base silicon NPN transistor designed for Class-C general purpose microwave applications. The device is capable of withstanding an infinite load VSWR under rated conditions. The MS3022 is particularly suited for


    Original     		PDF MS3022 MS3022

    Untitled

    Abstract: No abstract text available
    Text: MS2553C 35 Watts, 50 Volts Pulsed Avionics 1025 to 1150 MHz GENERAL DESCRIPTION The MS2553C is a medium power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF.


    Original     		PDF MS2553C MS2553C

    TL 1838

    Abstract: vs 1838 b a105 transistor TRANSISTOR a105 DS9667CN Darlington pair IC high current c 9647 transistor Deutsch Relays TL DS2003 DS9667
    Text: DS2003 DS9667 DS2004 High Current Voltage Darlington Drivers General Description The DS2003 DS9667 DS2004 are comprised of seven high voltage high current NPN Darlington transistor pairs All units feature common emitter open collector outputs To maximize their effectiveness these units contain suppression diodes for inductive loads and appropriate emitter base


    Original     		PDF DS2003 DS9667 DS2004 DS2004 TL 1838 vs 1838 b a105 transistor TRANSISTOR a105 DS9667CN Darlington pair IC high current c 9647 transistor Deutsch Relays TL

    J154

    Abstract: jmc5801 capacitor 220uF/63V RO4350 MS2553C
    Text: MS2553C 35 Watts, 50 Volts Pulsed Avionics 1025 to 1150 MHz GENERAL DESCRIPTION The MS2553C is a medium power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF.


    Original     		PDF MS2553C MS2553C J154 jmc5801 capacitor 220uF/63V RO4350

    transistor j380

    Abstract: J225 J22 transistor 200B AWG20 M210 MS3022 J380
    Text: MS3022 1 Watts, 28 Volts Class-C, CW 1.0 to 2.0 GHz GENERAL DESCRIPTION The MS3022 is a common base silicon NPN transistor designed for Class-C general purpose microwave applications. The device is capable of withstanding an infinite load VSWR under rated conditions. The MS3022 is particularly suited for


    Original     		PDF MS3022 MS3022 transistor j380 J225 J22 transistor 200B AWG20 M210 J380

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b^E D bbS3T31 DDETISS OES BLV94 Jl IAPX UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r common base, class-B operation in mobile radio transmitters fo r the 900 MHz communication band. Features


    OCR Scan     		PDF bbS3T31 BLV94 OT171) BLV94

    transistor cq 529

    Abstract: BLV94 sot-171 transistor zx series
    Text: PHILIPS IN T E RN AT ION AL bSE D m 711GÛ5b 0Db3052 Jl 3T1 • PHIN BLV94 UHF P O W ER T R A N SIST O R NPN silicon planar epitaxial transistor prim arily intended fo r common base, class-B operation in mobile radio transmitters fo r the 900 MHz comm unication band.


    OCR Scan     		PDF BLV94 711DfiEb 00b3Dbà transistor cq 529 BLV94 sot-171 transistor zx series

    KA 2717

    Abstract: MDC2125
    Text: b B L T E S M G l G l b S T Q7T M M O T b Order this data sheet by MDC2125/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MDC2125 SMALLBLOCK Products M o to ro la P referred D evice High Voltage Level Shifter This monolithic, PNP common base, high voltage transistor array is designed to


    OCR Scan     		PDF MDC2125/D MDC2125 738B-01 738B-02 738B-02 KA 2717 MDC2125