TRANSISTOR COMMON BASE CONNECTION Search Results

TRANSISTOR COMMON BASE CONNECTION Result Highlights (5)

Part	Manufacturer	Description
SSM10N961L	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET x 2, Common drain, VSSS=30 V, 0.0128 Ω@10V, TCSPAG-341501
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL

TRANSISTOR COMMON BASE CONNECTION Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: EMC5DXV5T1, EMC5DXV5T5 Preferred Devices Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com 3 The BRT Bias Resistor Transistor contains a single transistor with	Original	OT-553	PDF
Untitled Abstract: No abstract text available Text: EMC2DXV5T1, EMC5DXV5T1 Preferred Devices Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com 3 The BRT Bias Resistor Transistor contains a single transistor with	Original	OT-553	PDF
EMC3DXV5T5 Abstract: No abstract text available Text: EMC3DXV5T1, EMC3DXV5T5 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com 3 The BRT Bias Resistor Transistor contains a single transistor with	Original	OT-553 EMC3DXV5T5	PDF
marking u5 Abstract: No abstract text available Text: EMC5DXV5T1, EMC5DXV5T5 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com 3 The BRT Bias Resistor Transistor contains a single transistor with	Original	OT-553 marking u5	PDF
SMD310 Abstract: No abstract text available Text: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 1 R1 The BRT Bias Resistor Transistor contains a single transistor with	Original	r14525 SMD310	PDF
free transistor equivalent book Abstract: RESISTOR footprint dimension all ic datasheet in one pdf file ic 4000 Aluminium Housed high Power Resistor high gain low voltage PNP transistor transistor equivalent table transistor equivalent book 1000 volt pnp transistor network resistor Text: EMC2DXV5T1, EMC3DXV5T1, EMC5DXV5T1 Preferred Devices Dual Common Base−Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 2 R1 The BRT Bias Resistor Transistor contains a single transistor with	Original	OT-553 free transistor equivalent book RESISTOR footprint dimension all ic datasheet in one pdf file ic 4000 Aluminium Housed high Power Resistor high gain low voltage PNP transistor transistor equivalent table transistor equivalent book 1000 volt pnp transistor network resistor	PDF
UMC3NT1 Abstract: SMD310 Text: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 1 R1 The BRT Bias Resistor Transistor contains a single transistor with	Original	r14525 UMC3NT1 SMD310	PDF
Untitled Abstract: No abstract text available Text: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base−Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 1 R1 The BRT Bias Resistor Transistor contains a single transistor with	Original	OT-353	PDF
Untitled Abstract: No abstract text available Text: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 1 R1 The BRT Bias Resistor Transistor contains a single transistor with	Original	r14525	PDF
norton amplifier Abstract: LM3900 VCO jfet discrete differential transistor jfet cascode internal structure of ic lm3900 ULTRA HIGH SPEED FREQUENCY DIVIDER LM359 operational amplifier discrete schematic norton op. amp Designing Type II Compensation for Current Mode Text: National Semiconductor Application Note 278 Timothy T. Regan September 1981 Why Another Norton Amplifier? there is no Miller effect on the collector-to-base capacitance of the input transistor. Also, there is no collector-to-emitter parasitic feedback in the common base configured transistor, Q2, so the high frequency signal appearing at the output	Original	AN-278 norton amplifier LM3900 VCO jfet discrete differential transistor jfet cascode internal structure of ic lm3900 ULTRA HIGH SPEED FREQUENCY DIVIDER LM359 operational amplifier discrete schematic norton op. amp Designing Type II Compensation for Current Mode	PDF
SMD310 Abstract: SOT353 U1 Text: UMA4NT1, UMA6NT1 Preferred Devices Dual Common Emitter Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base	Original	r14525 SMD310 SOT353 U1	PDF
HFA08TA60C Abstract: No abstract text available Text: HFA08TA60CPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 2 x 4 A FEATURES • • • • • • • Base Common Cathode • • • • • Anode 2 1 Common 3 Cathode RoHS* COMPLIANT Reduced RFI and EMI Reduced power loss in diode and switching transistor	Original	HFA08TA60CPbF HFA08TA60C 11-Mar-11	PDF
M142 Abstract: SD1414-12 Text: SD1414-12  RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS PRELIMINARY DATA • ■ ■ ■ 960 MHz 13.5 VOLTS COMMON BASE POUT = 40 W MIN. WITH 4.3 dB gain DESCRIPTION The SD1414-12 is a 13.5 V Class C Epitaxial silicon NPN planar transistor designed for	Original	SD1414-12 SD1414-12 M142	PDF
M142 Abstract: SD1414-12 Text: SD1414-12 RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS PRELIMINARY DATA • ■ ■ ■ 960 MHz 13.5 VOLTS COMMON BASE POUT = 40 W MIN. WITH 4.3 dB gain DESCRIPTION The SD1414-12 is a 13.5 V Class C Epitaxial silicon NPN planar transistor designed for	Original	SD1414-12 SD1414-12 M142	PDF

SD1897 Abstract: No abstract text available Text: SD1897 RF & MICROWAVE TRANSISTORS 1.65 GHz SATCOM APPLICATIONS . . . 1.65 GHz 28 VOLTS CLASS C OPERATION COMMON BASE POUT = 10 W MIN. WITH 11.0 dB GAIN .250 x .320 2LFL M170 epoxy sealed ORDER CODE SD1897 BRANDING 1897 PIN CONNECTION DESCRIPTION The SD1897 is a 28 V Class C silicon NPN transistor designed for INMARSAT and other 1.65 GHz	Original	SD1897 SD1897	PDF
PS9634 Abstract: PS9634L power transistor vo1l Text: POWER TRANSISTOR DRIVING BASE AMPLIFIER BUILT-IN TYPE OPTOCOUPLER PS9634 PS9634L FEATURES DESCRIPTION • HIGH INSTANTANEOUS COMMON MODE REJECTION VOLTAGE CMH = -1000 V/µs MIN, CML = 1000 V/µs MIN The PS9634 is an optical linkage device mounting a GaAs infrared LED on the light emitting side input side , and a	Original	PS9634 PS9634L PS9634 PS9634L 24-Hour power transistor vo1l	PDF
Untitled Abstract: No abstract text available Text: MS3022 1 Watts, 28 Volts Class-C, CW 1.0 to 2.0 GHz GENERAL DESCRIPTION The MS3022 is a common base silicon NPN transistor designed for Class-C general purpose microwave applications. The device is capable of withstanding an infinite load VSWR under rated conditions. The MS3022 is particularly suited for	Original	MS3022 MS3022	PDF
Untitled Abstract: No abstract text available Text: MS2553C 35 Watts, 50 Volts Pulsed Avionics 1025 to 1150 MHz GENERAL DESCRIPTION The MS2553C is a medium power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF.	Original	MS2553C MS2553C	PDF
TL 1838 Abstract: vs 1838 b a105 transistor TRANSISTOR a105 DS9667CN Darlington pair IC high current c 9647 transistor Deutsch Relays TL DS2003 DS9667 Text: DS2003 DS9667 DS2004 High Current Voltage Darlington Drivers General Description The DS2003 DS9667 DS2004 are comprised of seven high voltage high current NPN Darlington transistor pairs All units feature common emitter open collector outputs To maximize their effectiveness these units contain suppression diodes for inductive loads and appropriate emitter base	Original	DS2003 DS9667 DS2004 DS2004 TL 1838 vs 1838 b a105 transistor TRANSISTOR a105 DS9667CN Darlington pair IC high current c 9647 transistor Deutsch Relays TL	PDF
J154 Abstract: jmc5801 capacitor 220uF/63V RO4350 MS2553C Text: MS2553C 35 Watts, 50 Volts Pulsed Avionics 1025 to 1150 MHz GENERAL DESCRIPTION The MS2553C is a medium power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF.	Original	MS2553C MS2553C J154 jmc5801 capacitor 220uF/63V RO4350	PDF
transistor j380 Abstract: J225 J22 transistor 200B AWG20 M210 MS3022 J380 Text: MS3022 1 Watts, 28 Volts Class-C, CW 1.0 to 2.0 GHz GENERAL DESCRIPTION The MS3022 is a common base silicon NPN transistor designed for Class-C general purpose microwave applications. The device is capable of withstanding an infinite load VSWR under rated conditions. The MS3022 is particularly suited for	Original	MS3022 MS3022 transistor j380 J225 J22 transistor 200B AWG20 M210 J380	PDF
Untitled Abstract: No abstract text available Text: N AUER PHILIPS/DISCRETE b^E D bbS3T31 DDETISS OES BLV94 Jl IAPX UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r common base, class-B operation in mobile radio transmitters fo r the 900 MHz communication band. Features	OCR Scan	bbS3T31 BLV94 OT171) BLV94	PDF
transistor cq 529 Abstract: BLV94 sot-171 transistor zx series Text: PHILIPS IN T E RN AT ION AL bSE D m 711GÛ5b 0Db3052 Jl 3T1 • PHIN BLV94 UHF P O W ER T R A N SIST O R NPN silicon planar epitaxial transistor prim arily intended fo r common base, class-B operation in mobile radio transmitters fo r the 900 MHz comm unication band.	OCR Scan	BLV94 711DfiEb 00b3DbÃ transistor cq 529 BLV94 sot-171 transistor zx series	PDF
KA 2717 Abstract: MDC2125 Text: b B L T E S M G l G l b S T Q7T M M O T b Order this data sheet by MDC2125/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MDC2125 SMALLBLOCK Products M o to ro la P referred D evice High Voltage Level Shifter This monolithic, PNP common base, high voltage transistor array is designed to	OCR Scan	MDC2125/D MDC2125 738B-01 738B-02 738B-02 KA 2717 MDC2125	PDF

TRANSISTOR COMMON BASE CONNECTION Search Results

TRANSISTOR COMMON BASE CONNECTION Result Highlights (5)

TRANSISTOR COMMON BASE CONNECTION Datasheets Context Search

Untitled

Untitled

EMC3DXV5T5

marking u5

SMD310

free transistor equivalent book

UMC3NT1

Untitled

Untitled

norton amplifier

SMD310

HFA08TA60C

M142

M142

SD1897

PS9634

Untitled

Untitled

TL 1838

J154

transistor j380

Untitled

transistor cq 529

KA 2717