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    TRANSISTOR CODE MARK A2 Search Results

    TRANSISTOR CODE MARK A2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR CODE MARK A2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRIAC BCR 16 km

    Abstract: PJ 1199 diode TRIAC BCR 12 km catalog transistor TO-220-AR RENESAS marking code package triac sot 89 TRIAC BCR 10 AM pj 999 diode TO-92-AB 110N04
    Text: Part Numbers Part Numbers 1 to 2 Part No. Destination Thyristor and triac Part No. designation CR 8 K M -12 A BCR 8 C M -12 L A Power Transistor Product No. Designation Renesas Uniform Product Number Current ratings (Ex.) Version Commutation characteristics (Triac only)


    Original     		PDF R07CS0003EJ0200 TRIAC BCR 16 km PJ 1199 diode TRIAC BCR 12 km catalog transistor TO-220-AR RENESAS marking code package triac sot 89 TRIAC BCR 10 AM pj 999 diode TO-92-AB 110N04

    PU01

    Abstract: 20P2N-A M34280E1FP M34280E1GP M34280M1 M34280M1-XXXFP M34280M1-XXXGP TCA 720
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF 20P2E/F-A PU01 20P2N-A M34280E1FP M34280E1GP M34280M1 M34280M1-XXXFP M34280M1-XXXGP TCA 720

    PU01

    Abstract: tda 4280 LXY Series TCA 720 20P2N-A M34280E1FP M34280E1GP M34280M1 M34280M1-XXXFP M34280M1-XXXGP
    Text: MITSUBISHI MICROCOMPUTERS 4280 Group SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER for INFRARED REMOTE CONTROL TRANSMITTERS DESCRIPTION The 4280 Group is a 4-bit single-chip microcomputer designed with CMOS technology for remote control transmitters. The 4280 Group has 7 carrier waves and enables fabrication of 8 x 7 key


    Original     		PDF 20P2E/F-A PU01 tda 4280 LXY Series TCA 720 20P2N-A M34280E1FP M34280E1GP M34280M1 M34280M1-XXXFP M34280M1-XXXGP

    LXY Series

    Abstract: marking code SKs NEC AMC 20P2N-A M34280E1FP M34280E1GP M34280M1 M34280M1-XXXFP M34280M1-XXXGP PU01
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF 20P2E/F-A LXY Series marking code SKs NEC AMC 20P2N-A M34280E1FP M34280E1GP M34280M1 M34280M1-XXXFP M34280M1-XXXGP PU01

    y1 marking code transistor

    Abstract: HSB1386I transistor mark code H1
    Text: HI-SINCERITY Spec. No. : HI200201 Issued Date : 2002.02.01 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HSB1386I LOW FREQUENCY TRANSISTOR -20V, -4A Features • Low VCE(sat). VCE(sat)=-0.55V(Typ.) (IC/IB=-4A/-0.1A) • Excellent DC current gain characteristics.


    Original     		PDF HI200201 HSB1386I O-251 183oC 217oC 260oC y1 marking code transistor HSB1386I transistor mark code H1

    TL 434

    Abstract: y1 marking code transistor HSB1386J
    Text: HI-SINCERITY Spec. No. : HJ200301 Issued Date : 2001.11.30 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HSB1386J LOW FREQUENCY TRANSISTOR -20V, -4A Features • Low VCE(sat). VCE(sat)=-0.55V(Typ.) (IC/IB=-4A/-0.1A) • Excellent DC current gain characteristics.


    Original     		PDF HJ200301 HSB1386J O-252 183oC 217oC 260oC TL 434 y1 marking code transistor HSB1386J

    HLB121I

    Abstract: marking code k1 MARK Y1 Transistor transistor mark code H1
    Text: HI-SINCERITY Spec. No. : HE9027 Issued Date : 1996.11.06 Revised Date : 2004.09.24 Page No. : 1/4 MICROELECTRONICS CORP. HLB121I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121I is a medium power transistor designed for use in switching


    Original     		PDF HE9027 HLB121I HLB121I O-251 183oC 217oC 260oC marking code k1 MARK Y1 Transistor transistor mark code H1

    transistor mark code H1

    Abstract: y1 marking code transistor HLB121I hlb121 HE9027
    Text: HI-SINCERITY Spec. No. : HE9027 Issued Date : 1996.11.06 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HLB121I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121I is a medium power transistor designed for use in switching


    Original     		PDF HE9027 HLB121I HLB121I O-251 183oC 217oC 260oC transistor mark code H1 y1 marking code transistor hlb121 HE9027

    y1 marking code transistor

    Abstract: y2 marking HSB1386J HSD2118J TL 434 transistor y1 MARK Y1 Transistor marking Y1 transistor
    Text: HI-SINCERITY Spec. No. : HJ200205 Issued Date : 2002.04.01 Revised Date : 2005.07.14 Page No. : 1/5 MICROELECTRONICS CORP. HSD2118J LOW VCE sat TRANSISTOR (20V, 5A) Feature • Low VCE(sat), VCE(sat)=0.6V(Typ.)(IC=4A/IB=0.1A) • Excellent DC Current Gain Characteristic


    Original     		PDF HJ200205 HSD2118J HSB1386J O-252 183oC 217oC 260oC y1 marking code transistor y2 marking HSB1386J HSD2118J TL 434 transistor y1 MARK Y1 Transistor marking Y1 transistor

    PT 1017

    Abstract: transistor mark code H1 TL 434 transistor k 2837 HLB122I y1 marking code transistor Y2 MARKING MARK Y1 Transistor
    Text: HI-SINCERITY Spec. No. : HE9030 Issued Date : 1998.07.01 Revised Date : 2005.07.13 Page No. : 1/5 MICROELECTRONICS CORP. HLB122I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122I is a medium power transistor designed for use in switching


    Original     		PDF HE9030 HLB122I HLB122I O-251 183oC 217oC 260oC PT 1017 transistor mark code H1 TL 434 transistor k 2837 y1 marking code transistor Y2 MARKING MARK Y1 Transistor

    EN10

    Abstract: G003 G008 SMD TRANSISTOR mark 24 39
    Text: iC-MFN 8-FOLD FAIL-SAFE N-FET DRIVER Rev A2, Page 1/13 FEATURES APPLICATIONS ♦ 8-fold level shift up to 40 V output voltage ♦ Inputs compatible with TTL and CMOS levels, 40 V voltage proof ♦ Level shift configurable to 5 V, 10 V or supply voltage ♦ Short-circuit-proof push-pull current sources for driving FETs


    Original     		PDF QFN24 QFN24 D-55294 EN10 G003 G008 SMD TRANSISTOR mark 24 39

    sot-235 g2

    Abstract: marking h2 sot-23-5 MARKING G3 Transistor sot-23-5 marking G2
    Text: TC1188 TC1189 MAX8863/64 PIN-COMPATIBLE LOW-DROPOUT, 100 mA LINEAR REGULATORS FEATURES GENERAL DESCRIPTION • ■ ■ ■ Delivering up to 100 mA, the TC1188 and TC1189 are fixed output, low-dropout linear regulators that operate from a +2.5V to +6.5V input range. The 50 µA supply current


    Original     		PDF TC1188 TC1189 MAX8863/64 MAX8863/8864 TC1188/1189 OT-23A-5 SC-74A) TC1188/1189-1 sot-235 g2 marking h2 sot-23-5 MARKING G3 Transistor sot-23-5 marking G2

    2N60 transistor

    Abstract: all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648
    Text: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.07.14 Page No. : 1/6 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor


    Original     		PDF MOS200403 H02N60 O-252 200oC 183oC 217oC 260oC 245oC H02N60I, 2N60 transistor all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648

    MOSFET MARK y2

    Abstract: y1 marking code transistor marking code diode 648 PB40 bridge mosfet k 61 y1 mosfet sn60 transistor mark code H1 diode marking code a2 y2 2N60S marking code 749
    Text: HI-SINCERITY Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 MICROELECTRONICS CORP. H02N60S Series H02N60S Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab


    Original     		PDF MOS200504 H02N60S O-252 200oC 183oC 217oC 260oC 245oC H02N60SI, MOSFET MARK y2 y1 marking code transistor marking code diode 648 PB40 bridge mosfet k 61 y1 mosfet sn60 transistor mark code H1 diode marking code a2 y2 2N60S marking code 749

    PS2561-1

    Abstract: photocoupler 2561 PS2561-4-A ps2561 PS2561L-1 PS2561L1-1 PS2561L-1-E3 PS2561L2-1 PS2561L2-1-E3 PS2561L-2-E3
    Text: PHOTOCOUPLER PS2561-1,-2,-4,PS2561L-1,-2,-4 PS2561L1-1,-2,-4,PS2561L2-1,-2,-4 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES −NEPOC Series− DESCRIPTION The PS2561-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon


    Original     		PDF PS2561-1 PS2561L-1 PS2561L1-1 PS2561L2-1 PS2561-1, PS2561L-1, PS2561L1-1, PS2561L2-1, 80anty photocoupler 2561 PS2561-4-A ps2561 PS2561L-1-E3 PS2561L2-1-E3 PS2561L-2-E3

    4570 8 pin ic

    Abstract: 4500 microcomputer ic 4570 datasheet W32 MARKING M34570E8 M34570E8FP M34570EDFP M34570M4 M34570M4-XXXFP M34570M8
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF and971022 M34570MD-XXXFP M34570EDFP 4570 8 pin ic 4500 microcomputer ic 4570 datasheet W32 MARKING M34570E8 M34570E8FP M34570EDFP M34570M4 M34570M4-XXXFP M34570M8

    Untitled

    Abstract: No abstract text available
    Text: PHOTOCOUPLER PS2562-1,-2,-4,PS2562L-1,-2,-4 PS2562L1-1,-2,-4,PS2562L2-1,-2,-4 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES −NEPOC Series− DESCRIPTION The PS2562-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon


    Original     		PDF PS2562-1 PS2562L-1 PS2562L1-1 PS2562L2-1 PS2562-1, PS2562L-1, PS2562L1-1, PS2562L2-1,

    ic 4570 datasheet

    Abstract: LA 4570 4570 4570 8 pin marking code SKs W32 MARKING M34570E8 M34570E8FP M34570EDFP M34570M4
    Text: MITSUBISHI MICROCOMPUTERS 4570 Group SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION ● System clock switch function . f XIN /4 or not divided ● Timers Timer 1. 10-bit timer with a reload register and carrier wave


    Original     		PDF 10-bit port971022 M34570MD-XXXFP M34570EDFP ic 4570 datasheet LA 4570 4570 4570 8 pin marking code SKs W32 MARKING M34570E8 M34570E8FP M34570EDFP M34570M4

    LA 4570

    Abstract: ic 4570 datasheet marking code SKs NEC AMC SKs 99 W32 MARKING M34570E8 M34570E8FP M34570EDFP M34570M4
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF d971022 M34570MD-XXXFP M34570EDFP LA 4570 ic 4570 datasheet marking code SKs NEC AMC SKs 99 W32 MARKING M34570E8 M34570E8FP M34570EDFP M34570M4

    PS2566-1

    Abstract: PS2566-2 PS2566L-1 PS2566L-1-E3 PS2566L-2-E3 VDE0884
    Text: DATA SHEET PHOTOCOUPLER PS2566-1,-2, PS2566L-1,-2 HIGH ISOLATION VOLTAGE AC INPUT, DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES −NEPOC TM Series− DESCRIPTION The PS2566-1, -2 and PS2566L-1, -2 are optically coupled isolators containing GaAs light emitting diodes and an


    Original     		PDF PS2566-1 PS2566L-1 PS2566-1, PS2566L-1, PS2566L-1-E3, PS2566L-2-E3, PS2566-2 PS2566L-1-E3 PS2566L-2-E3 VDE0884

    02n60

    Abstract: all transistor 2N60 2N60 2N60 transistor PB40 bridge 2n60 application MOSFET MARK H1 TL 434 H02N60 H02N60E
    Text: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No. : 1/7 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor


    Original     		PDF MOS200403 H02N60 O-252 200oC 183oC 217oC 260oC 245oC H02N60I, 02n60 all transistor 2N60 2N60 2N60 transistor PB40 bridge 2n60 application MOSFET MARK H1 TL 434 H02N60E

    NEC 2562

    Abstract: nec marking code 2562 13005 D PS2562-1 PS2562-2 PS2562L-1 PS2562L-1-E3 PS2562L-2-E3 VDE0884
    Text: DATA SHEET PHOTOCOUPLER PS2562-1,-2, PS2562L-1,-2 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES −NEPOC TM Series− DESCRIPTION The PS2562-1, -2 and PS2562L-1, -2 are optically coupled isolators containing a GaAs light emitting diode and an


    Original     		PDF PS2562-1 PS2562L-1 PS2562-1, PS2562L-1, PS2562L-1-E3, PS2562L-2-E3, NEC 2562 nec marking code 2562 13005 D PS2562-2 PS2562L-1-E3 PS2562L-2-E3 VDE0884

    TDA 5020

    Abstract: 40555 Transistor d27c128 D27C64 mask ram bma 023 LXY Series marking code SKs 20P2N-A FAG 29 diode
    Text: MITSUBISHI MICROCOMPUTERS 4280 Group SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER for INFRARED REMOTE CONTROL TRANSMITTERS DESCRIPTION • C arrier wave output function port CARR The 4280 Group is a 4-bit single-chip microcomputer designed with CMOS technology for remote control transmitters. The 4280


    OCR Scan     		PDF 20P2E/F-A TDA 5020 40555 Transistor d27c128 D27C64 mask ram bma 023 LXY Series marking code SKs 20P2N-A FAG 29 diode

    K1 transistor

    Abstract: pnp vhf transistor
    Text: 25C D • 523SbQS QDQMS3‘i 4 WiSIZG f PNP Silicon Planar Transistor ' SIEMENS AKTIEN6ESELLSCHAF >39 BF767 0- BF 767 is a PNP silicon planar transistor including passivated surface in TO 236 plastic package 23 A 3 DIN 41869 . The transistor is particularly suitable for use in low-noise,


    OCR Scan     		PDF 523SbQS BF767 Q62702-F553 K1 transistor pnp vhf transistor