Untitled
Abstract: No abstract text available
Text: January 1990 Edition 1.1 PRODUCT PROFILE . 2SC3058A Silicon High Speed Power Transistor DESCRIPTION T h e 2 S C 3 0 5 8 A is a silicon N P N plan ar general purpose, high p ow er switching tra n sistor fabricated w ith Fujitsu's unique Ring E m itte r Transistor R E T te chnology.
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2SC3058A
2SC3058A
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31495MO
Abstract: transistor za
Text: O rdering num ber: EN 5063 No.5063 SA % Y O i I I _ I PNP Epitaxial Planar Silicon Transistor With bias FC155 resistances PNP Epitaxial Planar Silicon Transistor Constant-Current Circuit Applications F eatures
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FC155
-----15V
--10mA
--400mA
--50mA
--200mA,
--200mA
FC155
31495MO
transistor za
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14N60E
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M GW 14N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G W 14N 60ED Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packaged
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14N60ED/D
14N60E
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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CHN 645
Abstract: transistor chn 115 chn 726 MRF511 chn 706 CHN 612 CHN 851 chn 625 CHN 650 transistor chn 726
Text: MRF511 SILICON l ’h e R ,F L i n e HIGH FREQUENCY TRANSISTOR NPN S IL IC O N NPN SILICON HIGH FREQUENCY TRANSISTOR . . . designed specifically for broadband applications requiring low distortion characteristics and noise figure. Specified for use in C A T V applications.
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MRF511
CHN 645
transistor chn 115
chn 726
MRF511
chn 706
CHN 612
CHN 851
chn 625
CHN 650
transistor chn 726
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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Untitled
Abstract: No abstract text available
Text: Tem ic BUF636A S e m i c o n d u c t o r s Silicon NPN High Voltage Switching Transistor Features • Simple-sW itch-Off Transistor SWOT • HIGH SPEED technology • Planar passivation • 100 kHz switching rate • Very low switching losses • Very low dynamic saturation
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BUF636A
D-74025
26-Sep-97
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diode lt 238
Abstract: 21N60ED
Text: MOTOROLA Order this document by MGW21 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G W 21N 60ED Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packaged with a soft recovery u ltra -fa s t rectifier and uses an advanced
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MGW21
N60ED/D
MGW21N60ED/D
diode lt 238
21N60ED
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2N5332
Abstract: No abstract text available
Text: TYPE 2N5332 P-N-P SILICON TRANSISTOR BU LL E T IN NO. DL-S 6810830, SEP T EM BE R 1968 RADIATION-TOLERANT TRANSISTOR FOR SWITCHING AND GENERAL PURPOSE VHF-UHF AMPLIFIER APPLICATIONS • Guaranteed lCBo , hFE, and after 1x1 O'5 Fast Neutrons/cm2 V CE<ut • Complément to N-P-N type 2N5399
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2N5332
2N5399
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CHN 703
Abstract: c 2665 transistor MRF511
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T he RF L ine HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR NPN SILICO N . . . designed s p e c ific a lly fo r broadband a p p lica tio n s re q u irin g low d is to rtio n ch a ra c te ristic s and noise fig u re .
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MRF511
CHN 703
c 2665 transistor
MRF511
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Untitled
Abstract: No abstract text available
Text: SEM ICONDUCTOR KTX211E TE CHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • Including two devices in TES6. DIM M ILLIM ETER S A l.6± 0.05 • With Built-in bias resistors.
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KTX211E
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NDT2955
Abstract: ACAA TRANSISTOR
Text: June 1996 Nat ionaI Sem iconductor" NDT2955 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancem ent m od e p o w e r field effect tran sisto rs are produced using N ational's proprietary, high cell density, DMOS te chnology. This
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NDT2955
125-C
SD113G
0D4014D
NDT2955
ACAA TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: SEM ICONDUCTOR KTX303U TE CHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE SW ITC H IN G A PPLICATION. LOW V O LT A G E HIGH SPEED SWITCHING. FEA T U RE S • Including two TR, Diode devices in USV. (Ultra Super Mini type with 5 leads)
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KTX303U
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sy 320 diode
Abstract: No abstract text available
Text: SEM ICONDUCTOR KTX403U TE CHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SCHOTTKY BARRIER TYPE DIODE SW ITC H IN G A PPLICATION. LOW V O LT A G E HIGH SPEED SWITCHING. FEA T U RE S • Including tw o T R , D iode devices in USV. (U ltra Super M ini type w ith 5 leads)
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KTX403U
sy 320 diode
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Untitled
Abstract: No abstract text available
Text: SEM ICONDUCTOR KTX215E TE CHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTOR SW ITC H IN G A PPLICATION. INTERFA CE CIRCU IT A N D DRIVER CIRC U IT A PPLICATION. FEA T U RE S • Including two devices in TES6. Thin Extreme Super mini type with 6 leads. • With Built-in bias resistors.
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KTX215E
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Untitled
Abstract: No abstract text available
Text: SEM ICONDUCTOR KTX112T TE CHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR G E N E R A L PUR PO SE A PPLICATION. FEA T U RE S • Including two devices in TS6. DIM Thin Super Mini type with 6 pin • Simplify circuit design. 0| • Reduce a quantity o f parts and manufacturing process.
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KTX112T
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chn 610
Abstract: No abstract text available
Text: PRECISION BULK METAL FOIL TE CHN OL OG Y a c o m p a n y o f V I S H A Y VISHAY VISHAY M ODEL 1401 RESISTORS 3 Pin Transistor Outline Hermetic Resistor Network The three pin TO-18 package is suitable for single resistor hermetic packaging with case and lid grounded for electrical isolation. This
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Untitled
Abstract: No abstract text available
Text: SEM ICONDUCTOR KRX206U TE CHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SW ITC H IN G A PPLICATION. INTERFA CE CIRCU IT A N D DRIVER CIRC U IT A PPLICATION. FEA T U RE S • Including tw o devices in US6. U ltra Super m ini type w ith 6 leads. • W ith B uilt-in bias resistors.
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KRX206U
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1007U
Abstract: No abstract text available
Text: SEM ICONDUCTOR KRX104U TE CHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SW ITC H IN G A PPLICATION. INTERFA CE CIRCU IT A N D DRIVER CIRC U IT A PPLICATION. FEA T U RE S • Including tw o devices in U SV . U ltra Super m ini type w ith 5 leads. M IL L IM E T E R S
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KRX104U
1007U
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955 539 ic
Abstract: BFP81 0211s ix 0640
Text: Tem ic BFP81 Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features • Small feedback capacitance • Low noise figure
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BFP81
D-74025
31-Oct-97
955 539 ic
BFP81
0211s
ix 0640
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transistor C2075
Abstract: g10 smd transistor SMD Transistor 1c
Text: âUALITY TEC HN OLO GIES CORP QUALITY TECHNOLOGIES 27E D 74bbasi 0003443 VDE APPROVED TRANSISTOR OUTPUT OPTOCOUPLER H11A1 H11A1Z PACKAGE DIMENSIONS DESCRIPTION The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from
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74bbasi
H11A1
H11A1Z
H11A1
E50151
MCT9001
transistor C2075
g10 smd transistor
SMD Transistor 1c
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t 3866 power transistor
Abstract: transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor
Text: 2N3553 SILICON NPN VHF POWER TRANSISTOR 571 HIGH GAIN DRIVE R FOR 28 V FM APPLICATIONS • • 2.5 W a t 175 MHz Minimum Gain 10 dB mechanical data • • - 6 , 6 - » -12,7 mm - -
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2N3553
O-117
O-128
O-131
O-129
20PEP
t 3866 power transistor
transistor 571
transistor 3866 s
transistor d 5702 e d 5703
t 3866 transistor
transistor 2N 5688
2N3553
transistor t 3866
3866 transistor
2n RF transistor
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sot-143 vishay telefunken
Abstract: No abstract text available
Text: ViSHAY _ ▼ BFP183T/BFP183TW/BFP183TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.
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BFP183T/BFP183TW/BFP183TRW
BFP183TW
BFP183TRW
BFP183T
D-74025
20-Jan-99
sot-143 vishay telefunken
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