Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR CB 458 Search Results

    TRANSISTOR CB 458 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR CB 458 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    sot-89 marking E5

    Abstract: XC6372D matsua capacitor CE Series XC6372 XC6372A XC6372A301PR XC6372B XC6372C XC6372E 456I
    Text: Series Dual Mode [PWM/PFM] Step-Up DC/DC Controllers/Converters ◆CMOS Low Power Consumption •Applications ◆Operating Voltage : 0.9V~10.0V ●Cellular phones, pagers ◆Output Voltage Range : 2.0V~7.0V ●Palmtops ●Cameras, video recorders ◆Output Voltage Accuracy : ±2.5%


    Original
    50kHz, 100kHz, 180kHz XC6372 control00 XC6372A501PR XC6372 XC6372A301PR sot-89 marking E5 XC6372D matsua capacitor CE Series XC6372A XC6372A301PR XC6372B XC6372C XC6372E 456I PDF

    BF298

    Abstract: BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457
    Text: th o m so n -csf general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PN P N PN PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .


    OCR Scan
    BCW94 BF298 BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457 PDF

    F20M

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSU E 3 - OCTOBER 1995_ FEATURES * 400 Volt V CE0 C O M P LEM EN T A R Y TYPE - FM M T558 P A R T M A R K IN G D E T A I L - 458 SOT23 ABSOLUTE M A X IM U M RATINGS. PARAM ETER Collector-Base Voltage


    OCR Scan
    FMMT458 100mA, r100V F20M PDF

    hp 1458

    Abstract: 2SC4861 hp 2232 4868
    Text: Ordering num ber:EN4581 2SC4861 No.4581 NPN Epitaxial Planar Silicon Transistor SA%YO UHF Converter, Local Oscillator Applications I F eatures • High cutoff frequency : fx = 6.5GHz typ. - High gain : I S21e l2= 11.5dB typ f=lGHz . • Small Cob: NF = 0.65pF typ.


    OCR Scan
    EN4581 2SC4861 hp 1458 hp 2232 4868 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSUE 1 - SEPTEMBER 1994_ FEATURES * 400 V o lt VCE0 * 0.5 A m p c o n tin u o u s c u rre n t * Ptot= 1 W a tt REFER TO Z TX 458 FOR GRAPHS E-Line TQ92 Compatible ABSOLUTE MAXIMUM RATINGS.


    OCR Scan
    20MHz -10mA PDF

    CQ 817

    Abstract: cq 0765 TRANSISTOR cq 817 ic 4580 2SC4860
    Text: Ordering number: E N 4 5 8 0 2SC4860 No.4580 NPN E pitaxial P lan ar Silicon Transistor SA\YO UHF Converter, Local Oscillator Applications i F e a tu r e s • H igh cutoff frequency :fT = 6.5GHztyp. * H igh gain : I S21e l2= 11.5dB typ f= 1GHz . •Sm all Cob : N F = 0.65pF typ.


    OCR Scan
    EN4580 2SC4860 CQ 817 cq 0765 TRANSISTOR cq 817 ic 4580 PDF

    rank 502 fp

    Abstract: 2SC4863
    Text: Ordering n u m b e r:E N 4 5 8 2 _ 2SC4863 N o.4582 N PN Epitaxial Planar Silicon Transistor I VHF to UHF Wide-Band Low-Noise Amp Applications F e a tu r e s •Low noise : N F = l.ld B typ f= 1GHz • H igh ga in : I S21e I 2= lld B typ (f= 1GHz)


    OCR Scan
    EN4582 2SC4863 rank 502 fp PDF

    2N458A

    Abstract: 2N458 germanium transistor pnp germanium Power Transistor germanium Germanium power
    Text: Datasheet 2N 458A C G IK iQ I Semiconductor Corp. PNP G E R M A N IU M POWER TR A N S ISTO R 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T O -3 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION


    OCR Scan
    2N458A 2N458A 500mA 2N458 germanium transistor pnp germanium Power Transistor germanium Germanium power PDF

    Transistor B C 458

    Abstract: c 458 c transistor 60V transistor npn 2a switching applications bd533 Transistor n 535
    Text: BD533/535/537 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE TO-220 • Com plem ent to BD534, BD536 and BD538 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C olle ctor Base Voltage C olle ctor Em itter Voltage


    OCR Scan
    BD533/535/537 BD534, BD536 BD538 O-220 BD533 BD535 BD537 Transistor B C 458 c 458 c transistor 60V transistor npn 2a switching applications Transistor n 535 PDF

    Untitled

    Abstract: No abstract text available
    Text: : 8368602 SOLITRON¡ DEVICES INC^Ì DF|fl3fc,fit,05 DDDiatl 2 f - ENGINEERING DEVICE SPECIFICATION T W NO. 6079/2N2698 SILICON TRANSISTOR GENERAL DESCRIPTION This device is an NPN Triple Diffused Planar Power Transistor packaged in an HD case, designed primarily for switching applications


    OCR Scan
    bfltl02 0DD12ti 6079/2N2698 12/26/6DRWN. 6079/2N269B f-23-63-K-44 12/26/62DRWN. PDF

    PA47D

    Abstract: PA48D UPA47D transistor 16345 TT 6053
    Text: B & D Enterprises nPA47D, 48D Main & Liberty St. Russell PA 16345 /¿PA47D,48D 1- 800 - 458 - 6053 fax 814 -757 5400 *> IJ 3 NPN Silicon Epitaxial Quad Transistor High Current High Speed Switching Industrial Use h ^PA 47D,48D (i, fl-JliEI/PACKAGE DIMENSIONS


    OCR Scan
    uPA47D, uPA48D PA47D PA48D UPA47D transistor 16345 TT 6053 PDF

    BD440

    Abstract: BD442
    Text: BD440/442 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD439, BD441 respectively Ô ABSOLUTE MAXIMUM RATINGS Rating Unit V cbo -60 V VcES -80 -60 V V -80 V VcEO -60 V V Emitter Base Voltage V ebo


    OCR Scan
    BD440/442 BD439, BD441 O-126 BD440 BD442 PDF

    transistor NEC D 822 P

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.


    OCR Scan
    2SC4228 2SC4228 transistor NEC D 822 P PDF

    2SC4864

    Abstract: sanyo lc 15011 ZS22 ic 3586
    Text: Ordering number : EN 4 5 8 3 SAÊYO i No.4583 _ 2SC4864 NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amp Applications Features • Low noise : NF = l.ldB typ f=lGHz •High gain: I S21e I 2= lldB typ (f= 1GHz)


    OCR Scan
    2SC4864 sanyo lc 15011 ZS22 ic 3586 PDF

    4312 020 36640

    Abstract: ferroxcube wideband hf choke
    Text: PHILIPS INTERNAT ION AL b5E D 751 I IPHIN Ei 711002b BLV75/12 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in m obile radio transm itters in the 175 MHz communications band. Features • multi-base structure and emitter-ballasting resistors fo r an optim um temperature profile


    OCR Scan
    711002b BLV75/12 OT-119) 4312 020 36640 ferroxcube wideband hf choke PDF

    Untitled

    Abstract: No abstract text available
    Text: I N AMER PHILIPS/DISCRETE bbsa^ai □D276H7 S^0 b^E ]> APX BSR60 to 62 y v P-N-P DARLINGTON TRANSISTORS Silicon planar transistors in plastic TO-92 envelopes, intended for industrial applications e.g. print hammer, solenoid, relay and lamp driving. N-P-N complements are the BSR50, BSR51 and BSR52.


    OCR Scan
    D276H7 BSR60 BSR50, BSR51 BSR52. BSR60 BSR61 BSR62 D037A50 PDF

    ZTX752 equivalent

    Abstract: transistor 42-10a data BC369 FXTA92 BSS98
    Text: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request


    OCR Scan
    ZVP2106C ZVP2110A ZVP2110C ZVP2120A ZTX788B ZVP2120C ZVP3306A ZVP3310A ZVP4105A 2110C ZTX752 equivalent transistor 42-10a data BC369 FXTA92 BSS98 PDF

    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


    OCR Scan
    2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent PDF

    catalogue des transistors bipolaires de puissance

    Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


    OCR Scan
    PDF

    transistor NEC D 822 P

    Abstract: NEC D 986 transistor NEC B 617 2SC4228 transistor NEC D 587 r44 marking transistor D 2624
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.


    OCR Scan
    2SC4228 2SC4228 transistor NEC D 822 P NEC D 986 transistor NEC B 617 transistor NEC D 587 r44 marking transistor D 2624 PDF

    MSC1002

    Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
    Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition


    OCR Scan
    28Vdc MSC1002 AVIA c cube IC CD 4440 amplifier circuit diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Voltage Regulators AN8041S Liquid Crystal Backlight Control 1C • Overview Unit I mm The AN 8041S is an IC for control of the invertor of the liquid crystal backlight, using the PW M method. The out­ put voltage of D C -DC converter and the current of cath­


    OCR Scan
    AN8041S 8041S DD15755 AN804 PDF

    W1P 59 transistor

    Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
    Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan
    197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn PDF

    A 564 transistor

    Abstract: 3181 R33 transistor A 564
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.


    OCR Scan
    2SC4227 2SC4227 SC-70 A 564 transistor 3181 R33 transistor A 564 PDF