C3665 transistor
Abstract: c3665 2SC3665 2SC3665 equivalent 2-7D101A 2SA1425
Text: 2SC3665 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3665 Audio Power Amplifier Applications Driver-Stage Amplifier Applications • Unit: mm Complementary to 2SA1425. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit
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2SC3665
2SA1425.
C3665 transistor
c3665
2SC3665
2SC3665 equivalent
2-7D101A
2SA1425
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C3665 transistor
Abstract: C3665
Text: 2SC3665 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3665 Audio Power Amplifier Applications Driver-Stage Amplifier Applications • Unit: mm Complementary to 2SA1425. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit
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2SC3665
2SA1425.
2-7D101A
C3665 transistor
C3665
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C3665 transistor
Abstract: c3665 2SC3665 2-7D101A 2SA1425
Text: 2SC3665 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3665 Audio Power Amplifier Applications Driver-Stage Amplifier Applications • Unit: mm Complementary to 2SA1425. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit
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2SC3665
2SA1425.
C3665 transistor
c3665
2SC3665
2-7D101A
2SA1425
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PDF
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C3665 transistor
Abstract: c3665 2-7D101A 2SA1425 2SC3665
Text: 2SC3665 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3665 Audio Power Amplifier Applications Driver-Stage Amplifier Applications • Unit: mm Complementary to 2SA1425. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage
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2SC3665
2SA1425.
C3665 transistor
c3665
2-7D101A
2SA1425
2SC3665
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transistor c3668
Abstract: c3668 2SC3668 2-7D101A 2SA1428
Text: 2SC3668 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3668 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1000 mW
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2SC3668
2SA1428.
transistor c3668
c3668
2SC3668
2-7D101A
2SA1428
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c3668
Abstract: transistor c3668 2-7D101A 2SA1428 2SC3668
Text: 2SC3668 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3668 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1000 mW
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2SC3668
2SA1428.
c3668
transistor c3668
2-7D101A
2SA1428
2SC3668
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PDF
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transistor c3668
Abstract: c3668 2SA1428 transistor 2-7D101A 2SA1428 2SC3668
Text: 2SC3668 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3668 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1000 mW
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2SC3668
2SA1428.
transistor c3668
c3668
2SA1428 transistor
2-7D101A
2SA1428
2SC3668
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PDF
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c3668
Abstract: transistor c3668
Text: 2SC3668 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3668 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1000 mW
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2SC3668
2SA1428.
2-7D101A
c3668
transistor c3668
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c3669
Abstract: 2SC3669 2-7D101A 2SA1429
Text: 2SC3669 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3669 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 µs (typ.)
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2SC3669
2SA1429
c3669
2SC3669
2-7D101A
2SA1429
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C3669
Abstract: 2SC3669 2-7D101A 2SA1429
Text: 2SC3669 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3669 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 s (typ.)
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2SC3669
2SA1429
C3669
2SC3669
2-7D101A
2SA1429
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C3669
Abstract: 2-7D101A 2SA1429 2SC3669
Text: 2SC3669 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3669 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 s (typ.)
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2SC3669
2SA1429
C3669
2-7D101A
2SA1429
2SC3669
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C3669
Abstract: 2-7D101A
Text: 2SC3669 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3669 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 µs (typ.)
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2SC3669
2SA1429
2-7D101A
C3669
2-7D101A
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C3666
Abstract: 2-7D101A 2SC3666
Text: 2SC3666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3666 Audio Power Amplifier Applications • High DC current gain: hFE (1) = 100 to 320 • High power dissipation: PC = 1000 mW Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics
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2SC3666
C3666
2-7D101A
2SC3666
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Untitled
Abstract: No abstract text available
Text: 2SC3666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3666 Audio Power Amplifier Applications • High DC current gain: hFE (1) = 100 to 320 • High power dissipation: PC = 1000 mW Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics
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2SC3666
2-7D101A
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c3666
Abstract: 2-7D101A 2SC3666
Text: 2SC3666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3666 Audio Power Amplifier Applications • High DC current gain: hFE (1) = 100 to 320 • High power dissipation: PC = 1000 mW Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol
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2SC3666
c3666
2-7D101A
2SC3666
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transistor C372
Abstract: c372 transistor transistor C368 c371 transistor AN-994 IRGBC20MD2-S SMD-220 C-366 C369 transistor c369
Text: PD - 9.1141 IRGBC20MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT C Features VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses
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IRGBC20MD2-S
10kHz)
SMD-220
C-372
transistor C372
c372 transistor
transistor C368
c371 transistor
AN-994
IRGBC20MD2-S
SMD-220
C-366
C369 transistor
c369
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transistor c372
Abstract: c372 transistor transistor C369 transistor C368 transistor c367 c368 transistor AN-994 IRGBC20MD2-S SMD-220 C369 transistor
Text: Previous Datasheet Index Next Data Sheet PD - 9.1141 IRGBC20MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT C Features VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses
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IRGBC20MD2-S
10kHz)
SMD-220
C-372
transistor c372
c372 transistor
transistor C369
transistor C368
transistor c367
c368 transistor
AN-994
IRGBC20MD2-S
SMD-220
C369 transistor
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UL94V-0 inverter
Abstract: DTC124X HBA124XS6R HBC124XS6R RB222
Text: Spec. No. : C366S6R Issued Date : 2003.05.28 Revised Date : Page No. : 1/4 CYStech Electronics Corp. Dual NPN Digital Transistors HBC124XS6R Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
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C366S6R
HBC124XS6R
DTC124X
OT-363
OT-323
UL94V-0
UL94V-0 inverter
HBA124XS6R
HBC124XS6R
RB222
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TRANSISTOR D2102
Abstract: L3003 TRANSISTOR ETP35KAN619U L3005 TRANSISTOR 1SR124-4AT82 transistor D454 D362 TRANSISTOR l3007 ma29ta5 TELEVISION EHT TRANSFORMERS
Text: TX-28/25/21MD4 Service Manual Safety Specifications Service Support Block Diagrams Parts List Service Information Adjustments Self Check Schematic Diagrams Service Hints Mechanical View Waveforms Supplementary Information This interface provides a link between the TV and
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TX-28/25/21MD4
TZS6EZ002
TZS7EZ006
TZS7EZ005
TRANSISTOR D2102
L3003 TRANSISTOR
ETP35KAN619U
L3005 TRANSISTOR
1SR124-4AT82
transistor D454
D362 TRANSISTOR
l3007
ma29ta5
TELEVISION EHT TRANSFORMERS
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K105 transistor
Abstract: K110 B3 transistor k105 transistor C458 transistor C639 varistor 520 k14 Diode C84 009 pct303 g5020 toshiba l500
Text: ORDER NO. CPD0212020C0 Personal Computer CF-T1 This is the Service Manual for the following areas. M …for U.S.A. and Canada E …for U.K. G …for Germany Model No. CF-T1R64ZZ1 2 1: Operation System G: Microsoft Windows® XP Professional MUI K: Microsoft® Windows® XP Professional
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CPD0212020C0
CF-T1R64ZZ1
65536/16M
dots/1024
dots/1280
UNR9113J0L
K105 transistor
K110 B3
transistor k105
transistor C458
transistor C639
varistor 520 k14
Diode C84 009
pct303
g5020
toshiba l500
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12v 200W AUDIO booster CIRCUIT DIAGRAM
Abstract: TR359 schematic SMPS 12V PTC C851 SFR16t TDA8447 12v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM transistor for horizontal deflection output new bright R266 TU305B2
Text: APPLICATION NOTE CCM433 Autosync Monitor AN00033 Philips Semiconductors TP97035.2/W97 Philips Semiconductors CCM433 Autosync Monitor Application Note AN00033 Abstract The CCM433 demo monitor is an auto sync 17" high-end colour monitor. Its extensive geometry control and excellent video performance with a high
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CCM433
AN00033
TP97035
2/W97
12v 200W AUDIO booster CIRCUIT DIAGRAM
TR359
schematic SMPS 12V
PTC C851
SFR16t
TDA8447
12v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM
transistor for horizontal deflection output
new bright R266
TU305B2
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PDF
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transistor C546
Abstract: transistor C547 npn smd diode C543 transistor c693 smd diode c548 transistor C372 c528 transistor c545 transistor transistor c367 smd diode c524
Text: TI TAS5100EVM DESIGN DOCUMENT SLEU010A January 2002 Thunderbird TAS5100EVM Design Document Texas Instruments Claus Reckweg Content TAS5100EVM Schematic Version 13.00 6 pages TAS5100EVM Parts List Version 9.00 (5 pages) TAS5100EVM PCB Specification Version 2.00
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TAS5100EVM
SLEU010A
transistor C546
transistor C547 npn
smd diode C543
transistor c693
smd diode c548
transistor C372
c528 transistor
c545 transistor
transistor c367
smd diode c524
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transistor C372
Abstract: c372 transistor transistor c367 transistor C368 c371 transistor C372 O smd transistor 18E c366 transistor smd qe g10 smd transistor
Text: P D - 9.1141 htemational iörIRectifier IRGBC20MD2-S Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Short circuit rated - 1 0 m s @ 125°C, VGe = 15V Switching-ioss rating includes all "tail" losses
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OCR Scan
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10kHz)
IRGBC20MD2-S
C-371
SMD-220
C-372
transistor C372
c372 transistor
transistor c367
transistor C368
c371 transistor
C372 O
smd transistor 18E
c366
transistor smd qe
g10 smd transistor
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PDF
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transistor C372
Abstract: transistor C368 c372 transistor transistor c914 transistor c367 scr optoisolator c371 transistor c914 c368 transistor MCL611
Text: 112 O p to iso lato rs A* * W A, ~ PAC K A G E PRODUCT KEY OUTPUT FO RM AT TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTO R TRAN SISTOR TRAN SISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRAN SISTOR TRAN SISTOR
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OCR Scan
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MCT210
MCT26
MCT66
MCS2400
transistor C372
transistor C368
c372 transistor
transistor c914
transistor c367
scr optoisolator
c371 transistor
c914
c368 transistor
MCL611
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