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    TRANSISTOR C366 Search Results

    TRANSISTOR C366 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C366 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C3665 transistor

    Abstract: c3665 2SC3665 2SC3665 equivalent 2-7D101A 2SA1425
    Text: 2SC3665 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3665 Audio Power Amplifier Applications Driver-Stage Amplifier Applications • Unit: mm Complementary to 2SA1425. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit


    Original     		PDF 2SC3665 2SA1425. C3665 transistor c3665 2SC3665 2SC3665 equivalent 2-7D101A 2SA1425

    C3665 transistor

    Abstract: C3665
    Text: 2SC3665 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3665 Audio Power Amplifier Applications Driver-Stage Amplifier Applications • Unit: mm Complementary to 2SA1425. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit


    Original     		PDF 2SC3665 2SA1425. 2-7D101A C3665 transistor C3665

    C3665 transistor

    Abstract: c3665 2SC3665 2-7D101A 2SA1425
    Text: 2SC3665 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3665 Audio Power Amplifier Applications Driver-Stage Amplifier Applications • Unit: mm Complementary to 2SA1425. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit


    Original     		PDF 2SC3665 2SA1425. C3665 transistor c3665 2SC3665 2-7D101A 2SA1425

    C3665 transistor

    Abstract: c3665 2-7D101A 2SA1425 2SC3665
    Text: 2SC3665 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3665 Audio Power Amplifier Applications Driver-Stage Amplifier Applications • Unit: mm Complementary to 2SA1425. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SC3665 2SA1425. C3665 transistor c3665 2-7D101A 2SA1425 2SC3665

    transistor c3668

    Abstract: c3668 2SC3668 2-7D101A 2SA1428
    Text: 2SC3668 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3668 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1000 mW


    Original     		PDF 2SC3668 2SA1428. transistor c3668 c3668 2SC3668 2-7D101A 2SA1428

    c3668

    Abstract: transistor c3668 2-7D101A 2SA1428 2SC3668
    Text: 2SC3668 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3668 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1000 mW


    Original     		PDF 2SC3668 2SA1428. c3668 transistor c3668 2-7D101A 2SA1428 2SC3668

    transistor c3668

    Abstract: c3668 2SA1428 transistor 2-7D101A 2SA1428 2SC3668
    Text: 2SC3668 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3668 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1000 mW


    Original     		PDF 2SC3668 2SA1428. transistor c3668 c3668 2SA1428 transistor 2-7D101A 2SA1428 2SC3668

    c3668

    Abstract: transistor c3668
    Text: 2SC3668 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3668 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1000 mW


    Original     		PDF 2SC3668 2SA1428. 2-7D101A c3668 transistor c3668

    c3669

    Abstract: 2SC3669 2-7D101A 2SA1429
    Text: 2SC3669 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3669 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 µs (typ.)


    Original     		PDF 2SC3669 2SA1429 c3669 2SC3669 2-7D101A 2SA1429

    C3669

    Abstract: 2SC3669 2-7D101A 2SA1429
    Text: 2SC3669 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3669 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 s (typ.)


    Original     		PDF 2SC3669 2SA1429 C3669 2SC3669 2-7D101A 2SA1429

    C3669

    Abstract: 2-7D101A 2SA1429 2SC3669
    Text: 2SC3669 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3669 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 s (typ.)


    Original     		PDF 2SC3669 2SA1429 C3669 2-7D101A 2SA1429 2SC3669

    C3669

    Abstract: 2-7D101A
    Text: 2SC3669 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3669 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 µs (typ.)


    Original     		PDF 2SC3669 2SA1429 2-7D101A C3669 2-7D101A

    C3666

    Abstract: 2-7D101A 2SC3666
    Text: 2SC3666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3666 Audio Power Amplifier Applications • High DC current gain: hFE (1) = 100 to 320 • High power dissipation: PC = 1000 mW Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SC3666 C3666 2-7D101A 2SC3666

    Untitled

    Abstract: No abstract text available
    Text: 2SC3666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3666 Audio Power Amplifier Applications • High DC current gain: hFE (1) = 100 to 320 • High power dissipation: PC = 1000 mW Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SC3666 2-7D101A

    c3666

    Abstract: 2-7D101A 2SC3666
    Text: 2SC3666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3666 Audio Power Amplifier Applications • High DC current gain: hFE (1) = 100 to 320 • High power dissipation: PC = 1000 mW Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original     		PDF 2SC3666 c3666 2-7D101A 2SC3666

    transistor C372

    Abstract: c372 transistor transistor C368 c371 transistor AN-994 IRGBC20MD2-S SMD-220 C-366 C369 transistor c369
    Text: PD - 9.1141 IRGBC20MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT C Features VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses


    Original     		PDF IRGBC20MD2-S 10kHz) SMD-220 C-372 transistor C372 c372 transistor transistor C368 c371 transistor AN-994 IRGBC20MD2-S SMD-220 C-366 C369 transistor c369

    transistor c372

    Abstract: c372 transistor transistor C369 transistor C368 transistor c367 c368 transistor AN-994 IRGBC20MD2-S SMD-220 C369 transistor
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1141 IRGBC20MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT C Features VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses


    Original     		PDF IRGBC20MD2-S 10kHz) SMD-220 C-372 transistor c372 c372 transistor transistor C369 transistor C368 transistor c367 c368 transistor AN-994 IRGBC20MD2-S SMD-220 C369 transistor

    UL94V-0 inverter

    Abstract: DTC124X HBA124XS6R HBC124XS6R RB222
    Text: Spec. No. : C366S6R Issued Date : 2003.05.28 Revised Date : Page No. : 1/4 CYStech Electronics Corp. Dual NPN Digital Transistors HBC124XS6R Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input


    Original     		PDF C366S6R HBC124XS6R DTC124X OT-363 OT-323 UL94V-0 UL94V-0 inverter HBA124XS6R HBC124XS6R RB222

    TRANSISTOR D2102

    Abstract: L3003 TRANSISTOR ETP35KAN619U L3005 TRANSISTOR 1SR124-4AT82 transistor D454 D362 TRANSISTOR l3007 ma29ta5 TELEVISION EHT TRANSFORMERS
    Text: TX-28/25/21MD4 Service Manual Safety Specifications Service Support Block Diagrams Parts List Service Information Adjustments Self Check Schematic Diagrams Service Hints Mechanical View Waveforms Supplementary Information This interface provides a link between the TV and


    Original     		PDF TX-28/25/21MD4 TZS6EZ002 TZS7EZ006 TZS7EZ005 TRANSISTOR D2102 L3003 TRANSISTOR ETP35KAN619U L3005 TRANSISTOR 1SR124-4AT82 transistor D454 D362 TRANSISTOR l3007 ma29ta5 TELEVISION EHT TRANSFORMERS

    K105 transistor

    Abstract: K110 B3 transistor k105 transistor C458 transistor C639 varistor 520 k14 Diode C84 009 pct303 g5020 toshiba l500
    Text: ORDER NO. CPD0212020C0 Personal Computer CF-T1 This is the Service Manual for the following areas. M …for U.S.A. and Canada E …for U.K. G …for Germany Model No. CF-T1R64ZZ1 2 1: Operation System G: Microsoft Windows® XP Professional MUI K: Microsoft® Windows® XP Professional


    Original     		PDF CPD0212020C0 CF-T1R64ZZ1 65536/16M dots/1024 dots/1280 UNR9113J0L K105 transistor K110 B3 transistor k105 transistor C458 transistor C639 varistor 520 k14 Diode C84 009 pct303 g5020 toshiba l500

    12v 200W AUDIO booster CIRCUIT DIAGRAM

    Abstract: TR359 schematic SMPS 12V PTC C851 SFR16t TDA8447 12v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM transistor for horizontal deflection output new bright R266 TU305B2
    Text: APPLICATION NOTE CCM433 Autosync Monitor AN00033 Philips Semiconductors TP97035.2/W97 Philips Semiconductors CCM433 Autosync Monitor Application Note AN00033 Abstract The CCM433 demo monitor is an auto sync 17" high-end colour monitor. Its extensive geometry control and excellent video performance with a high


    Original     		PDF CCM433 AN00033 TP97035 2/W97 12v 200W AUDIO booster CIRCUIT DIAGRAM TR359 schematic SMPS 12V PTC C851 SFR16t TDA8447 12v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM transistor for horizontal deflection output new bright R266 TU305B2

    transistor C546

    Abstract: transistor C547 npn smd diode C543 transistor c693 smd diode c548 transistor C372 c528 transistor c545 transistor transistor c367 smd diode c524
    Text: TI TAS5100EVM DESIGN DOCUMENT SLEU010A January 2002 Thunderbird TAS5100EVM Design Document Texas Instruments Claus Reckweg Content TAS5100EVM Schematic Version 13.00 6 pages TAS5100EVM Parts List Version 9.00 (5 pages) TAS5100EVM PCB Specification Version 2.00


    Original     		PDF TAS5100EVM SLEU010A transistor C546 transistor C547 npn smd diode C543 transistor c693 smd diode c548 transistor C372 c528 transistor c545 transistor transistor c367 smd diode c524

    transistor C372

    Abstract: c372 transistor transistor c367 transistor C368 c371 transistor C372 O smd transistor 18E c366 transistor smd qe g10 smd transistor
    Text: P D - 9.1141 htemational iörIRectifier IRGBC20MD2-S Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Short circuit rated - 1 0 m s @ 125°C, VGe = 15V Switching-ioss rating includes all "tail" losses


    OCR Scan     		PDF 10kHz) IRGBC20MD2-S C-371 SMD-220 C-372 transistor C372 c372 transistor transistor c367 transistor C368 c371 transistor C372 O smd transistor 18E c366 transistor smd qe g10 smd transistor

    transistor C372

    Abstract: transistor C368 c372 transistor transistor c914 transistor c367 scr optoisolator c371 transistor c914 c368 transistor MCL611
    Text: 112 O p to iso lato rs A* * W A, ~ PAC K A G E PRODUCT KEY OUTPUT FO RM AT TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTO R TRAN SISTOR TRAN SISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRAN SISTOR TRAN SISTOR


    OCR Scan     		PDF MCT210 MCT26 MCT66 MCS2400 transistor C372 transistor C368 c372 transistor transistor c914 transistor c367 scr optoisolator c371 transistor c914 c368 transistor MCL611