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    TRANSISTOR C309 Search Results

    TRANSISTOR C309 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C309 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BTA1759M3

    Abstract: BTC4505M3
    Text: CYStech Electronics Corp. Spec. No. : C309M3 Issued Date : 2003.06.30 Revised Date : Page No. : 1/4 High Voltage PNP Epitaxial Planar Transistor BTA1759M3 Description • High breakdown voltage. BVCEO=-400V • Low saturation voltage, typically VCE(sat) = -0.07V at Ic/IB =-10mA/-1mA.


    Original     		C309M3 BTA1759M3 -400V) -10mA/-1mA. BTC4505M3. OT-89 UL94V-0 BTA1759M3 BTC4505M3 PDF

    BTNA44A3

    Abstract: BTPA94A3
    Text: CYStech Electronics Corp. Spec. No. : C309A3 Issued Date : 2003.06.30 Revised Date : Page No. : 1/4 High Voltage PNP Epitaxial Planar Transistor BTPA94A3 Description • High breakdown voltage. BVCEO=-400V • Low saturation voltage, typically VCE(sat) = -0.07V at Ic/IB =-10mA/-1mA.


    Original     		C309A3 BTPA94A3 -400V) -10mA/-1mA. BTNA44A3. UL94V-0 BTNA44A3 BTPA94A3 PDF

    4z sot23 marking code

    Abstract: marking 4z sot-23 BTA1759N3 BTC4505N3 pnp transistor 300v sot23
    Text: CYStech Electronics Corp. Spec. No. : C309N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 1/4 High Voltage PNP Epitaxial Planar Transistor BTA1759N3 Description • High breakdown voltage. BVCEO=-400V • Low saturation voltage, typical VCE(sat) =-0.2V at Ic/IB =-20mA/-2mA.


    Original     		C309N3 BTA1759N3 -400V) -20mA/-2mA. BTC4505N3. OT-23 UL94V-0 4z sot23 marking code marking 4z sot-23 BTA1759N3 BTC4505N3 pnp transistor 300v sot23 PDF

    4z sot23 marking code

    Abstract: BTNA44N3 BTPA94N3
    Text: CYStech Electronics Corp. Spec. No. : C309N3-H Issued Date : 2003.06.30 Revised Date : Page No. : 1/4 High Voltage PNP Epitaxial Planar Transistor BTPA94N3 Description • High breakdown voltage. BVCEO=-400V • Low saturation voltage, typically VCE(sat) = -0.07V at Ic/IB =-10mA/-1mA.


    Original     		C309N3-H BTPA94N3 -400V) -10mA/-1mA. BTNA44N3. OT-23 UL94V-0 4z sot23 marking code BTNA44N3 BTPA94N3 PDF

    A1759

    Abstract: C309A3-R BTA1759A3 BTC4505A3
    Text: CYStech Electronics Corp. Spec. No. : C309A3-R Issued Date : 2003.10.15 Revised Date : 2004.04.02 Page No. : 1/4 High Voltage PNP Epitaxial Planar Transistor BTA1759A3 Description • High breakdown voltage. BVCEO=-400V • Low saturation voltage, typical VCE(sat) = -0.2V at Ic / IB = -20mA /-2mA.


    Original     		C309A3-R BTA1759A3 -400V) -20mA BTC4505A3. UL94V-0 A1759 C309A3-R BTA1759A3 BTC4505A3 PDF

    C311 Transistor

    Abstract: TRANSISTOR C309 transistor c308 c309 transistor
    Text: P D - 9.1072 bitemational jorJRectifier IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all “tail" losses • Optimized for medium operating frequency 1 to


    OCR Scan     		10kHz) IRGBC30M C-311 TQ-220AB C-312 C311 Transistor TRANSISTOR C309 transistor c308 c309 transistor PDF

    transistor c307

    Abstract: C311 Transistor transistor c308 C-311 D-12 IRGBC30M
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1072 IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to


    Original     		IRGBC30M 10kHz) O-220AB C-312 transistor c307 C311 Transistor transistor c308 C-311 D-12 IRGBC30M PDF

    TRANSISTOR C307

    Abstract: transistor c308
    Text: International IK» 1Rectifier P D - 9 .1 0 7 2 IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to


    OCR Scan     		IRGBC30M 10kHz) C-311 O-22QAB C-312 0201G2 TRANSISTOR C307 transistor c308 PDF

    TRANSISTOR C307

    Abstract: C-311 D-12 IRGBC30M ac power control applications 400v 16a C311 Transistor
    Text: PD - 9.1072 IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve


    Original     		IRGBC30M 10kHz) O-220AB C-312 TRANSISTOR C307 C-311 D-12 IRGBC30M ac power control applications 400v 16a C311 Transistor PDF

    TRANSISTOR C307

    Abstract: C311 Transistor ac power control applications 400v 16a C-311 D-12 IRGBC30M c307 mosfet c309
    Text: PD - 9.1072 IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve


    Original     		IRGBC30M 10kHz) O-220AB C-312 TRANSISTOR C307 C311 Transistor ac power control applications 400v 16a C-311 D-12 IRGBC30M c307 mosfet c309 PDF

    transistor c257

    Abstract: No abstract text available
    Text: S P RAG UE /S EM IC ON D GROUP 8 514 0 19 SPRAGUE. =13 D • SEM ICO N D S / ICS fiS13ÔS0 00G357b 0 ■ T*" <27-^Î ö 93D 03576J>. BIPOLAR TRANSISTOR CHIPS PNP Transistors Pro-Electron Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain


    OCR Scan     		fiS13Ã 00G357b 03576J> C177A C177B C178A transistor c257 PDF

    C502 Zener diode

    Abstract: vr301 potentiometer VR501 F101 Type T fuse TRANSISTOR C309 4518BE VR502 vr302 potentiometer 2sc1015-GR 2SC1015GR
    Text: ^ SERVICING INFORMATION B X PRECISION* M O D E L 3011A 3011B FUNCTION GENERATOR PARTS LIST SCHEMATIC SYMBOL DESCRIPTION B+K PRECISION PART NUMBER RESISTORS Unlisted resistors are +5%, 1/4 W. See Schematic for value. R101, 102 R104 R105 R205 R206 R207 R208


    OCR Scan     		3011B R210A R211A R306-307 R405-407 VR205_ C502 Zener diode vr301 potentiometer VR501 F101 Type T fuse TRANSISTOR C309 4518BE VR502 vr302 potentiometer 2sc1015-GR 2SC1015GR PDF

    1-450-358-11

    Abstract: SI-18752 si18752 schematic diagram surround sony ry901 t1al fuse M5F79M07L T902 transformer 11ES2-NTA2B 2SA1175-HFE
    Text: TA-VE150 SERVICE MANUAL AEP Model UK Model This amplifier has the Dolby Surround system. Manufactured under license from Dolby Laboratories Licensing Corporation. “Dolby”, the double-D symbol a and “Pro Logic” are trademarks of Dolby Laboratories Licensing Corporation.


    Original     		TA-VE150 RM-U150) 1-450-358-11 SI-18752 si18752 schematic diagram surround sony ry901 t1al fuse M5F79M07L T902 transformer 11ES2-NTA2B 2SA1175-HFE PDF

    schematic diagram tv sony 21 trinitron

    Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112
    Text: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV


    Original     		KV-EF34M80 RM-951 SCC-U28D-A NA324-M3 A80LPD10X) SBX3005-01 RM-951) schematic diagram tv sony 21 trinitron cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112 PDF

    C30902S

    Abstract: C30902E geiger PerkinElmer Avalanche Photodiode geiger counter C30921E avalanche photodiode c30902e PerkinElmer trigger avalanche photodiode bias C30921S
    Text: Description Silicon Avalanche Photodiodes PerkinElmer Type C30902E avalanche C30902E, C30902S, C30921E, C30921S EVERYTHING High Speed Solid State Detectors for Fiber Optic and Very Low Light-Level Applications IN A photodiode utilizes a silicon detector chip


    Original     		C30902E C30902E, C30902S, C30921E, C30921S C30902S geiger PerkinElmer Avalanche Photodiode geiger counter C30921E avalanche photodiode c30902e PerkinElmer trigger avalanche photodiode bias C30921S PDF

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302 PDF

    Untitled

    Abstract: No abstract text available
    Text: E fi 8, G/CANADA/OPTOELEK n c i i 3D3DblG ÜÜÜD12L. 0b3 • CANA T1 1D E le c tro Silicon Avalanche Photodiodes OptiCS C30902E, C30902S, C3 0921E, C30921S DATA SHEET High Speed Solid State Detectors for Fiber Optic and Very Low Light-Level Applications RCA Type C30902E ava­


    OCR Scan     		C30902E, C30902S, 0921E, C30921S C30902E L-571 L-933 C30921E C30902E C30902S PDF

    C30902E

    Abstract: C30921S avalanche photodiode c30902e C30921E C30902 740417 C30902S geiger RCA Transistor rca power transistor
    Text: RCA IO E D I 7MfiMb7S OQOQlSb U | T ' H i - INC/ ELECTRO OPTICS I t C il Silicon Avalanche Photodiodes C30902E, C30902S, C30921E, C3Q921S >?!-»»»'r.-V- D A T A S H E E T High Speed Solid State Detectors for Fiber Optic and Very Low Light-Level Applications


    OCR Scan     		C30902E, C30902S, C30921E, C30921S L-571 L-933 C30902E C30921E C30902S C30921S avalanche photodiode c30902e C30921E C30902 740417 geiger RCA Transistor rca power transistor PDF

    transistor cross reference

    Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
    Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC


    OCR Scan     		PDF

    dinverter 768r

    Abstract: G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		HEF4527BT HEF4531BT HEF4534BP HEF4534BT MSP-STK430X320 AD9054/PCB AD9054BST-135 IPS521G IPS521S IRL2203S dinverter 768r G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601 PDF

    C30902E

    Abstract: 30902E EG*G Optoelectronics C30902BFC avalanche photodiodes avalanche photodiode C30902 C30921E geiger C3090
    Text: 1 J l E C s 3 * 1 - 3 9 8 C O P TO ELECTR O N ICS C30902E, C30902S, C30921E. C 3 0921S, C30902BST, C30902BFC C c J i7 c iC / < 3 High Speed Solid State Detectors for Fibre Optic and Very Low Light-Level Applications EG&G 30902E avalanche photodiode utilises a silicon


    OCR Scan     		C30902E, C30902S. C30921E. C30921S, C30902BST. C30902BFC 30902E C30902E/S C30921E/S C30902E EG*G Optoelectronics C30902BFC avalanche photodiodes avalanche photodiode C30902 C30921E geiger C3090 PDF

    C30902EH

    Abstract: No abstract text available
    Text: Silicon Avalanche Photodiodes C30902 Series High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview Features and Benefits Excelitas’ C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This


    Original     		C30902 C30902EH C30921EH DTS0408 PDF

    C30902SH-DTC

    Abstract: C30902EH PerkinElmer Avalanche Photodiode APD, laser, range, finder C30902 geiger apd C30902SH PerkinElmer mode a C3092SH-TC PerkinElmer trigger mode
    Text: Introduction PerkinElmer Type C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths. The responsivity of the


    Original     		C30902EH C30921EH C30902SH-DTC PerkinElmer Avalanche Photodiode APD, laser, range, finder C30902 geiger apd C30902SH PerkinElmer mode a C3092SH-TC PerkinElmer trigger mode PDF

    C30902EH

    Abstract: C30902SH-DTC PerkinElmer Avalanche Photodiode geiger apd avalanche photodiodes geiger C30902 APD, laser, range, finder avalanche photodiode ghz C30921EH
    Text: High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview PerkinElmer’s C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as


    Original     		C30902EH C30921EH DTS0408 C30902SH-DTC PerkinElmer Avalanche Photodiode geiger apd avalanche photodiodes geiger C30902 APD, laser, range, finder avalanche photodiode ghz PDF