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    BTA1759M3 Datasheets (1)

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    BTA1759M3 CYStech Electronics High Voltage PNP Epitaxial Planar Transistor Original PDF

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    BTA1759M3

    Abstract: BTC4505M3
    Text: CYStech Electronics Corp. Spec. No. : C309M3 Issued Date : 2003.06.30 Revised Date : Page No. : 1/4 High Voltage PNP Epitaxial Planar Transistor BTA1759M3 Description • High breakdown voltage. BVCEO=-400V • Low saturation voltage, typically VCE(sat) = -0.07V at Ic/IB =-10mA/-1mA.


    Original     		PDF C309M3 BTA1759M3 -400V) -10mA/-1mA. BTC4505M3. OT-89 UL94V-0 BTA1759M3 BTC4505M3

    SOT-89 marking 3d

    Abstract: BTA1759M3 BTC4505M3
    Text: CYStech Electronics Corp. Spec. No. : C210M3 Issued Date : 2003.05.15 Revised Date :2005.10.21 Page No. : 1/5 High Voltage NPN Epitaxial Planar Transistor BTC4505M3 Features • High breakdown voltage. BVCEO =400V • Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10mA/1mA.


    Original     		PDF C210M3 BTC4505M3 10mA/1mA. BTA1759M3 OT-89 UL94V-0 SOT-89 marking 3d BTA1759M3 BTC4505M3