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    TRANSISTOR C128 CURRENT RATING Search Results

    TRANSISTOR C128 CURRENT RATING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C128 CURRENT RATING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor C128

    Abstract: c128 transistor 28c128 C1-28Z transistor c1-28 GHZ TECHNOLOGY C1-28 55FT
    Text: C1-28/C1-28Z 1 Watts - 28 Volts, Class C Defcom 400 MHz GENERAL DESCRIPTION CASE OUTLINE The C1-28 / Z is a COMMON EMITTER transistor capable of providing1 Watts of Class AB or C, RF output power in the band 100 - 400 MHz. This transistor is designed for Class AB or C amplifier applications. It utilizes


    Original     		PDF C1-28/C1-28Z C1-28 150oCNDS transistor C128 c128 transistor 28c128 C1-28Z transistor c1-28 GHZ TECHNOLOGY 55FT

    transistor c128

    Abstract: c128 transistor c128 transistor datasheet TRANSISTOR 1003 STC128M KST-1003-000 C128
    Text: STC128M Semiconductor NPN Silicon Transistor Features • • • • • Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability


    Original     		PDF STC128M O-92M KST-1003-000 100mA 500mA, transistor c128 c128 transistor c128 transistor datasheet TRANSISTOR 1003 STC128M KST-1003-000 C128

    transistor C128

    Abstract: c128 transistor transistor package TO-92M C128 STC128M
    Text: STC128M NPN Silicon Transistor Features Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability Low on resistance : RON=0.6Ω Max. (IB=1mA)


    Original     		PDF STC128M O-92M KSD-T0B003-000 transistor C128 c128 transistor transistor package TO-92M C128 STC128M

    transistor c128

    Abstract: c128 transistor
    Text: STC128M Semiconductor NPN Silicon Transistor Features • • • • • Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability


    Original     		PDF STC128M STC128M O-92M KST-I003-000 transistor c128 c128 transistor

    transistor c128

    Abstract: No abstract text available
    Text: STC128M NPN Silicon Transistor Features Low sat urat ion m edium current applicat ion Ext rem ely low collect or sat urat ion volt age Suit able for low volt age large current drivers High DC current gain and large current capabilit y Low on resist ance : RON= 0.6Ω Max. ( I B= 1m A)


    Original     		PDF STC128M O-92M KSD-T0B003-000 transistor c128

    Ampire 128 x 64

    Abstract: Ampire 128 64 Ampire 128 Ampire LCD LCD 128x128 128x128 LCD db3 c113 Ampire 128 SPECIFICATIONS MODULE CUSTOMER CUSTOMER PART transistor c128 AF128128K 128x128 LCD 1.5 128x128 Color LCD Ampire Ampire LCD
    Text: A MP I R E SPECIFICATIONS FOR LCD MODULE CUSTOMER CUSTOMER PART NO. AMPIRE PART NO. AF-128128KFIQY APPROVED BY DATE APPROVED BY Date : 2002/11/4 CHECKED BY AMPIRE CO., LTD. ORGANIZED BY 1 RECORD OF REVISION Revision Date 2002/11/4 Date : 2002/11/4 Contents


    Original     		PDF AF-128128KFIQY HD66750S IST3168CA1 Ampire 128 x 64 Ampire 128 64 Ampire 128 Ampire LCD LCD 128x128 128x128 LCD db3 c113 Ampire 128 SPECIFICATIONS MODULE CUSTOMER CUSTOMER PART transistor c128 AF128128K 128x128 LCD 1.5 128x128 Color LCD Ampire Ampire LCD

    transistor c118

    Abstract: C124 transistor transisTOR C123 transistor c114 diagram for C114 transistor transistor c114 transistor c117 587-1352-1-ND PM820 transistor C124
    Text: PTMA080304M Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use in cellular amplifier applications in the 700 to 1000 MHz frequency


    Original     		PDF PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 a080304 transistor c118 C124 transistor transisTOR C123 transistor c114 diagram for C114 transistor transistor c114 transistor c117 587-1352-1-ND PM820 transistor C124

    db3 c113

    Abstract: Ampire 128 x 64 transistor c128 Ampire 128 128x128 LCD Ampire 128 64 1.5 128x128 Color LCD Ampire LCD HD66750S 1.5 128x128 Color LCD 27
    Text: A MP I R E SPECIFICATIONS FOR LCD MODULE CUSTOMER CUSTOMER PART NO. AMPIRE PART NO. AT-128128H1FI-00H APPROVED BY DATE † Approved For Specifications † Approved For Specifications & Sample APPROVED BY Date : 2003/2/21 CHECKED BY AMPIRE CO., LTD. ORGANIZED BY


    Original     		PDF AT-128128H1FI-00H db3 c113 Ampire 128 x 64 transistor c128 Ampire 128 128x128 LCD Ampire 128 64 1.5 128x128 Color LCD Ampire LCD HD66750S 1.5 128x128 Color LCD 27

    transistor c114

    Abstract: No abstract text available
    Text: PTMA080304M Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use in cellular amplifier applications in the 700 to 1000 MHz frequency


    Original     		PDF PTMA080304M PTMA080304M 20-lead transistor c114

    IRGPC50FD2

    Abstract: No abstract text available
    Text: PD - 9.800 IRGPC50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to


    Original     		PDF IRGPC50FD2 10kHz) O-247AC C-132 IRGPC50FD2

    600V 25A Ultrafast Diode

    Abstract: IRGPC50FD2 IRGPC50FD 600v 20a IGBT transistor c128 current rating igbt 600v 20a
    Text: PD - 9.800 IRGPC50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to


    Original     		PDF IRGPC50FD2 10kHz) O-247AC C-132 600V 25A Ultrafast Diode IRGPC50FD2 IRGPC50FD 600v 20a IGBT transistor c128 current rating igbt 600v 20a

    TL272

    Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148
    Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


    Original     		PDF PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 TL272 TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148

    TL306

    Abstract: TL184 TL167 TL307
    Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


    Original     		PDF PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 96stances. TL306 TL184 TL167 TL307

    c128 transistor

    Abstract: 600V 25A Ultrafast Diode IRGPC50FD2 transistor c128 transistor c128 current rating
    Text: Previous Datasheet Index Next Data Sheet PD - 9.800 IRGPC50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to


    Original     		PDF IRGPC50FD2 10kHz) O-247AC C-132 c128 transistor 600V 25A Ultrafast Diode IRGPC50FD2 transistor c128 transistor c128 current rating

    transisTOR C124

    Abstract: transistor c114 transistor c114 diagram c124 transistor c107 TRANSISTOR TRANSISTOR C107 transisTOR C123 capacitor 10u 16v G103 1kV transistor c111
    Text: Improved Low Cost Triple CRT Driver CORPORATION CVA2411TX FEATURES • • • • • DESCRIPTION Ease of Use Small Heat Sink OSD Option EMI Control Option Excellent Gray Scale Linearity APPLICATIONS • CRT Displays for 1280 x 1024 Resolution with Pixel


    Original     		PDF CVA2411TX 160MHz CVA2411TX 69kHz BY336 JP101 1S-23C transisTOR C124 transistor c114 transistor c114 diagram c124 transistor c107 TRANSISTOR TRANSISTOR C107 transisTOR C123 capacitor 10u 16v G103 1kV transistor c111

    transistor c124

    Abstract: TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300
    Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


    Original     		PDF PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 transistor c124 TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300

    ic 67a smd

    Abstract: diode 1n4007 melf smd a6079 PMB2220 SMD CODE PAX VCO 2307 0805RC 22-20 diode 1206RC TRANSISTOR c104
    Text: PMB 2220 Version 2.2 1 Overview Combined with a PLL i.e. PMB 2306 or PMB 2307 and a power amplifier, the PMB 2220 device performs a complete DECT transmitter. Additionally, the phase locked loop can be switched to receive mode and be used as a local oscillator for the receive mixer.


    Original     		PDF P-SSOP-20-1 GPS05387 ic 67a smd diode 1n4007 melf smd a6079 PMB2220 SMD CODE PAX VCO 2307 0805RC 22-20 diode 1206RC TRANSISTOR c104

    Si3226x

    Abstract: tqfp 64 thermal resistance si3226 phase controller L120 si3206 power BJT tip 122 SI3205 Silabs si3226 1 d222 transistor
    Text: Si3226/7 Si3208/9 D U A L P R O S L I C W I T H DC-DC C O N T R O L L E R Features Performs all BORSCHT functions Ideal for short- or long-loop applications Internal balanced or unbalanced ringing Low power consumption Software-programmable parameters:


    Original     		PDF Si3226/7 Si3208/9 Si3227) Si3226x tqfp 64 thermal resistance si3226 phase controller L120 si3206 power BJT tip 122 SI3205 Silabs si3226 1 d222 transistor

    transistor c128

    Abstract: 55FT
    Text: C1-28/C1-28Z _ 1Watts "28 Volts’ Class C GHz TECHNOLOGY DsfCO Ill 400 IV lH Z »f-M IC »O W A V e SILICO N >OWE> « A H S IS T O H Î GENERAL DESCRIPTION CASE OUTLINE The Cl-28 / Z is a COMMON EMITTER transistor capable of providingl Watts of Class AB or C, RF output power in the band 100 - 400 MHz. This


    OCR Scan     		PDF C1-28/C1-28Z Cl-28 transistor c128 55FT

    acrian RF POWER TRANSISTOR

    Abstract: acrian RF POWER TRANSISTOR 300 w transistor c128 C1-28-2 CM25-28 transistor d 571 CM10-28 Acrian transistor c1-28 acrian inc
    Text: ACRIAN INC T7 D E § 0 1 f l 2 □□ □ U h ? 7 p C GENERAL DESCRIPTION The C1-28 is a UHF power transistor designed to produce 1 watt of RF power when operated from a 28V power supply and used below 500MHz. The C1 -28 is also available in a stud package as part No. C1-28Z.


    OCR Scan     		PDF 01fl2! C1-28 500MHz. C1-28Z. C1-28/C1-28Z -65to GDD117D C1-28/Z-4 acrian RF POWER TRANSISTOR acrian RF POWER TRANSISTOR 300 w transistor c128 C1-28-2 CM25-28 transistor d 571 CM10-28 Acrian transistor c1-28 acrian inc

    IRGPC50FD2

    Abstract: No abstract text available
    Text: PD - 9.800 International li«] Rectifier IRGPC50FD2 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE _ Features • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to


    OCR Scan     		PDF 10kHz) IRGPC50FD2 C-131 O-247AC C-132 IRGPC50FD2

    Untitled

    Abstract: No abstract text available
    Text: International PD9800 Rectifier_IRGPC50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT Vces = 6 0 0 V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to


    OCR Scan     		PDF IRGPC50FD2 10kHz) C-131 SS45E D01TJE1 O-247AC

    ha11235

    Abstract: hitachi tantalum capacitor transisTOR C123 transistor c128 transistor c128 current rating afpv CI23 TRANSISTOR c104 ha1123 R106
    Text: HA11235 Synchronous Signal Processing System Functions • Sync separator • Horizontal automatic frequency control AFC • Horizontal oscillator • X-ray protector • Vertical oscillator • Vertical driver Features (DP-16-2) • Fewer external components


    OCR Scan     		PDF HA11235 ha11235 hitachi tantalum capacitor transisTOR C123 transistor c128 transistor c128 current rating afpv CI23 TRANSISTOR c104 ha1123 R106

    NKT677

    Abstract: NKT612 ORP12 sft353 GEX34 1/equivalent transistor ac127 OC171 equivalent AD149 NKT275 ac128
    Text: CONTENTS p ag e Mazda Range of Audio Transistors 2 Recommended Line-ups for Audio Amplifiers 3 Key to Symbols 4 Do’s and Dont’s 6 Device Data 7 European Nomenclature 34 Device Identification 35 Comparables List 47 Replacing Selenium Rectifiers 62 Replacing Valve Rectifiers


    OCR Scan     		PDF AC113 AC155 AC156 AC165 AC128 AC154 AC166 AC167 AC177 AD140 NKT677 NKT612 ORP12 sft353 GEX34 1/equivalent transistor ac127 OC171 equivalent AD149 NKT275 ac128