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    TRANSISTOR C1 162 Search Results

    TRANSISTOR C1 162 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C1 162 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 8026

    Abstract: 2SC5245 FH105
    Text: Ordering number:ENN6219 NPN Epitaxial Planar Silicon Composite Transistor FH105 High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Package Dimensions unit:mm 2160 [FH105] 0.25 6 5 4 E2 1 2 0.65 2.0 Tr2 C1 B2 1 : Collector1 2 : Base2 3 : Collector2


    Original     		PDF ENN6219 FH105 FH105] FH105 2SC5245, transistor 8026 2SC5245

    2SC5245

    Abstract: FH105 IT00323 transistor 8026
    Text: Ordering number:ENN6219 NPN Epitaxial Planar Silicon Composite Transistor FH105 High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Package Dimensions unit:mm 2160 [FH105] 0.25 6 5 4 E2 1 2 0.65 2.0 Tr2 C1 B2 1 : Collector1 2 : Base2 3 : Collector2


    Original     		PDF ENN6219 FH105 FH105] FH105 2SC5245, 2SC5245 IT00323 transistor 8026

    transistor Bf 966

    Abstract: kf 982 AN1026 S21E UPA895TD UPA895TD-T3 2412 NEC
    Text: NEC's NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • SMALL PACKAGE OUTLINE: Units in mm Package Outline TD (TOP VIEW) 1.2 mm x 0.8 mm • UPA895TD 1.0±0.05 0.8 +0.07 -0.05 LOW HEIGHT PROFILE: C1 6 B1


    Original     		PDF UPA895TD UPA895TD NE851 transistor Bf 966 kf 982 AN1026 S21E UPA895TD-T3 2412 NEC

    Hitachi DSA002715

    Abstract: No abstract text available
    Text: HA1127, HA1127P, HA1127FP 5 Transistor Arrays Ordering Information Application Type No. Package Commercial use HA1127 DP-14 Industrial use HA1127P DP-14 HA1127FP FP-14DA Pin Arrangement C1 1 14 C5 B1 2 13 E5 substrate E1 3 12 B5 B2 4 11 C4 C2 5 10 E4 B2


    Original     		PDF HA1127, HA1127P, HA1127FP HA1127 HA1127P HA1127FP DP-14 FP-14DA Hitachi DSA002715

    HA1127

    Abstract: Hitachi DSA0076 HA1127P DP-14 FP-14DA HA1127FP
    Text: HA1127/P/FP 5 Transistor Arrays ADE-204-062 Z Rev. 0 Dec. 2000 Ordering Information Application Type No. Package Commercial use HA1127 DP-14 Industrial use HA1127P DP-14 HA1127FP FP-14DA Pin Arrangement C1 1 14 C5 B1 2 13 E5 (substrate) E1 3 12 B5 B2 4 11


    Original     		PDF HA1127/P/FP ADE-204-062 HA1127 DP-14 HA1127P HA1127FP FP-14DA HA1127 Hitachi DSA0076 HA1127P DP-14 FP-14DA HA1127FP

    RA33H1516M1

    Abstract: RA33H1516M1-101 VDD1015
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to


    Original     		PDF RA33H1516M1 154-162MHz RA33H1516M1 33watt 162MHz RA33H1516M1-101 VDD1015

    ra33h1516m1

    Abstract: RA33H1516M1-101 RF MODULE CIRCUIT DIAGRAM trichloroethylene
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to


    Original     		PDF RA33H1516M1 154-162MHz RA33H1516M1 33watt 162MHz RA33H1516M1-101 RF MODULE CIRCUIT DIAGRAM trichloroethylene

    ra33h1516m1

    Abstract: RF power amplifier 10mW RF MOSFET MODULE RF MODULE CIRCUIT DIAGRAM for channel 4 MOSFET Amplifier Module v 33w marking transistor RF
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to


    Original     		PDF RA33H1516M1 154-162MHz RA33H1516M1 33watt 162MHz RF power amplifier 10mW RF MOSFET MODULE RF MODULE CIRCUIT DIAGRAM for channel 4 MOSFET Amplifier Module v 33w marking transistor RF

    ATC100B

    Abstract: TRANSISTOR Z4 MAPLST1617-030CF
    Text: RF Power Field Effect Transistor LDMOS, 1600 — 1700 MHz, 30W, 28V 5/5/05 MAPLST1617-030CF Preliminary Features Package Style Designed for INMARSAT applications in the 1620-1670 MHz frequency band. Typical Two Tone Performance IMD=-30 dBc : Average Output Power: 15W


    Original     		PDF MAPLST1617-030CF 1670MHz) ATC100B TRANSISTOR Z4 MAPLST1617-030CF

    RA35H1516M

    Abstract: RA35H1516M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to


    Original     		PDF RA35H1516M 154-162MHz RA35H1516M 40-watt 162-MHz RA35H1516M-101

    RF MOSFET MODULE

    Abstract: RA35H1516M RA35H1516M-01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to


    Original     		PDF RA35H1516M 154-162MHz RA35H1516M 40-watt 162-MHz RF MOSFET MODULE RA35H1516M-01

    RA35H1516M

    Abstract: RA35H1516M-01 RA35H1516M-E01 162MHz
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M 154-162MHz 40W 12.5V MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to


    Original     		PDF RA35H1516M 154-162MHz RA35H1516M 40-watt 162-MHz RA35H1516M-01 RA35H1516M-E01 162MHz

    PCF7931AS

    Abstract: PCF7935AS PCF79730S-3851 PCF7931 PCF7935 PCF7931XP/C PCF79730S pcf79735S PHILIPS PCF7935AS TDA4859ps
    Text: Philips Semiconductors Product Discontinuations Notice DN44 December 31, 2000 SEE DN44 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.


    Original     		PDF 87C528 X3A-KTY181/1 X3A-OH155 PCF7931AS PCF7935AS PCF79730S-3851 PCF7931 PCF7935 PCF7931XP/C PCF79730S pcf79735S PHILIPS PCF7935AS TDA4859ps

    RA33H1516M1

    Abstract: No abstract text available
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to


    Original     		PDF RA33H1516M1 154-162MHz RA33H1516M1 33watt 162MHz

    RA35H1516M-101

    Abstract: RA35H1516M 40Wat amp circuit diagrams 400w RF amplifier 400W
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to


    Original     		PDF RA35H1516M 154-162MHz RA35H1516M 40-watt 162-MHz RA35H1516M-101 40Wat amp circuit diagrams 400w RF amplifier 400W

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power Modules > RA33H1516M1 RoHS Compliance, 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to 162MHz range. The battery can be connected directly to the drain of the


    Original     		PDF RA33H1516M1 154-162MHz RA33H1516M1 33watt 162MHz

    Untitled

    Abstract: No abstract text available
    Text: <Silicon RF Power Modules > RA35H1516M RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range. The battery can be connected directly to the drain of the


    Original     		PDF RA35H1516M 154-162MHz RA35H1516M 40-watt 162-MHz

    RF power amplifier 10mW

    Abstract: RA33H1516M1 473 marking code transistor
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to


    Original     		PDF RA33H1516M1 154-162MHz RA33H1516M1 33watt 162MHz RF power amplifier 10mW 473 marking code transistor

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power Modules > RA33H1516M1 RoHS Compliance, 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to 162MHz range. The battery can be connected directly to the drain of the


    Original     		PDF RA33H1516M1 154-162MHz RA33H1516M1 33watt 162MHz Oct2011

    amp circuit diagrams 400w

    Abstract: No abstract text available
    Text: <Silicon RF Power Modules > RA35H1516M RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range. The battery can be connected directly to the drain of the


    Original     		PDF RA35H1516M 154-162MHz RA35H1516M 40-watt 162-MHz amp circuit diagrams 400w

    PCF7952

    Abstract: pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191
    Text: Philips Semiconductors, Inc. Product Discontinuation Notice DN50 Exhibit A December 31, 2003 SEE DN50 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.


    Original     		PDF VP22480-3 VP22480-5 VP22530-2 PCF7952 pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191

    BPT23C02

    Abstract: transistor 200 watt 28 v 0-30 mhz 30GHz transistor
    Text: BIPOLARICS, INC. Part Number BPT23C02 SILICON MICROWAVE POWER OSCILLAOR TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Collector Configuration DESCRIPTION AND APPLICATIONS: Bipolarics' BPT23C02 is a high performance silicon bipolar transistor intended for use in


    Original     		PDF BPT23C02 BPT23C02 transistor 200 watt 28 v 0-30 mhz 30GHz transistor

    lc 945 p transistor

    Abstract: AT-00511 transistor LC 945 T773 lc 945 transistor
    Text: HEW LETT-PACKARD/ CMPNTS b lE » • W fâ« HEW LETT mLfim PACKARD 4447-504 Features • • • • • • SSQ H H P A □ □ □ C1 77 E AT-00511 Surface Mount General Purpose Silicon Bipolar Transistor SOT-143 Plastic Package 11 dB Typical P|dB at 2.0 GHz


    OCR Scan     		PDF M447SA4 0DDT77E AT-00511 AT-00511 OT-143 lc 945 p transistor transistor LC 945 T773 lc 945 transistor

    2SC1624

    Abstract: 2sc1625 2SA814 3c46 2SA815 AC75
    Text: 2 s c 1624 2 s c 1625 O 660 SI ^ K SILICON NPN EPITAXIAL BASE M ESA Unit TRANSISTOR in m m 2s c 1624 2s c 1625 ELECTRICAL CHARACTERISTICS CHARACTERISTIC 3 \y » ^ 5 * * * 3 » SYMBOL I CBO Vq b ^ 5 0 7 * L + m *EBO V EB= n m • X. i y f •'î-xflflfcttSŒ


    OCR Scan     		PDF 2sc1624 2sc1625 2SC1624) 2SC1625) 2SA814, 2SA815 2SA814 2SA815 2SC1624 2sc1625 3c46 AC75