Untitled
Abstract: No abstract text available
Text: 6N1135, 6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES NC 1 8 C VCC • Operating temperature from - 55 °C to + 110 °C A 2 7 B (VB) • Isolation test voltages: 5300 VRMS C 3 6 C (VO)
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6N1135,
6N1136
i179081
i179081
6N1135
6N1136
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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6N1135-X006
Abstract: TRANSISTOR SMD MARKING CODE t 04
Text: 6N1135, 6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES NC 1 8 C VCC • Operating temperature from - 55 °C to + 110 °C A 2 7 B (VB) • Isolation test voltages: 5300 VRMS C 3 6 C (VO)
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Original
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6N1135,
6N1136
i179081
2002/95/EC
2002/96/EC
i179081
6N1135
6N1136
2011/65/EU
2002/95/EC.
6N1135-X006
TRANSISTOR SMD MARKING CODE t 04
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PDF
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Untitled
Abstract: No abstract text available
Text: 6N1135, 6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES NC 1 8 C VCC • Operating temperature from - 55 °C to + 110 °C A 2 7 B (VB) • Isolation test voltages: 5300 VRMS C 3 6 C (VO)
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Original
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6N1135,
6N1136
i179081
2002/95/EC
2002/96/EC
i179081
6N1135
6N1136
11-Mar-11
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PDF
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6 pin TRANSISTOR SMD CODE 21
Abstract: No abstract text available
Text: 6N1135, 6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES NC 1 8 C VCC • Operating temperature from - 55 °C to + 110 °C A 2 7 B (VB) • Isolation test voltages: 5300 VRMS C 3 6 C (VO)
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Original
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6N1135,
6N1136
i179081
2002/95/EC
2002/96/EC
i179081
6N1135
6N1136
11-Mar-11
6 pin TRANSISTOR SMD CODE 21
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PDF
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Untitled
Abstract: No abstract text available
Text: 6N1135, 6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES NC 1 8 C VCC • Operating temperature from - 55 °C to + 110 °C A 2 7 B (VB) • Isolation test voltages: 5300 VRMS C 3 6 C (VO)
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Original
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6N1135,
6N1136
i179081
2002/95/EC
2002/96/EC
i179081
6N1135
6N1136
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: 6N1135, 6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES NC 1 8 C VCC • Operating temperature from - 55 °C to + 110 °C A 2 7 B (VB) • Isolation test voltages: 5300 VRMS C 3 6 C (VO)
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Original
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6N1135,
6N1136
i179081
i179081
6N1135
6N1136
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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PDF
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MCH4008
Abstract: TB 2920
Text: MCH4008 Ordering number : ENN8395 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4008 UHF to C Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage.
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MCH4008
ENN8395
20GHz
S21e2
MCH4008
TB 2920
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transistor bf 760
Abstract: MCH4008 945 npn
Text: MCH4008 Ordering number : ENN8395 NPN Epitaxial Planar Silicon Transistor MCH4008 UHF to C Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage. High gain : NF=1.1dB typ f=2GHz .
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MCH4008
ENN8395
20GHz
S21e2
transistor bf 760
MCH4008
945 npn
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PDF
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d768 transistor
Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442
Text: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent
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NE32584C
NE32584C
d768 transistor
3-pin D128 transistor
transistor D128
transistor D586
D1515
ne32584c application note
transistor d436
d388 transistor
D832 transistor
transistor D442
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PDF
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SMD Transistor t 06
Abstract: No abstract text available
Text: 6N1135/6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES • Operating temperature from - 55 °C to + 110 °C • Isolation test voltages: 5300 VRMS • TTL compatible NC 1 8 C VCC • High bit rates: 1.0 MBd
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Original
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6N1135/6N1136
i179081
2002/95/EC
2002/96/EC
6N1135
6N1136
08-Apr-05
SMD Transistor t 06
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PDF
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Untitled
Abstract: No abstract text available
Text: 6N1135/6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES • Operating temperature from - 55 °C to + 110 °C • Isolation test voltages: 5300 VRMS • TTL compatible NC 1 8 C VCC • High bit rates: 1.0 MBd
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Original
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6N1135/6N1136
i179081
2002/95/EC
2002/96/EC
6N1135
6N1136
08-Apr-05
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PDF
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DIN EN 17635
Abstract: 6N1135 6N1135-X007 6N1136 6N1136-X006 6N1136-X007 6N1136-X009 OPTOCOUPLER photo output K6N135
Text: 6N1135/6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES • Operating temperature from - 55 °C to + 110 °C • Isolation test voltages: 5300 VRMS • TTL compatible NC 1 8 C VCC • High bit rates: 1.0 MBd
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Original
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6N1135/6N1136
i179081
6N1135
6N1136
18-Jul-08
DIN EN 17635
6N1135-X007
6N1136-X006
6N1136-X007
6N1136-X009
OPTOCOUPLER photo output
K6N135
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PDF
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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OCR Scan
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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PDF
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58W SOT
Abstract: BLW85 ZL18
Text: N AMER P H I L I P S / D IS C R ET E b ^E D b b S 3 T 31 • 0 0 2 ^ 4 ^ 574 IAPX D L V V O O A H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f, transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and
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OCR Scan
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bbS3T31
BLW85
7Z77540
7Z77541
58W SOT
BLW85
ZL18
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PDF
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431202036640 choke
Abstract: CEF 83 A 3 BLW85 ZL18 blw85 transistor test circuit
Text: PHILIPS INTERN A T I O N A L L.5E D 711Dfi2ti 00b33>4b Ô3Û • PHIN ■ I BLW85 _ A _ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V . The transistor is resistance stabilized and
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OCR Scan
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BLW85
QQb3357
431202036640 choke
CEF 83 A 3
BLW85
ZL18
blw85 transistor test circuit
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PDF
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MPQ3762
Abstract: it 051 1N916 2N3762 tup pnp transistor
Text: M P Q silicon 3 7 6 2 QUAD DUAL IN-LINE PNP SILICON ANNULAR MEMORY DRIVER TRANSISTOR QUAD DUAL-IN-LINE PNP SILICON MEMORY DRIVER TRANSISTOR . . . designed fo r high-current, high-speed switching. • Low Collector-E m itter Saturation Voltage — VC E (sat) s 0 .5 5 V d c (M ax) @ l c s 5 0 0 m Adc
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OCR Scan
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MPQ3762
120ns
2N3762
O-116
30Vdc
1N916
MPQ3762
it 051
1N916
2N3762
tup pnp transistor
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PDF
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RC723DP
Abstract: SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK
Text: VOLTAGE REGULATORS OPERATIONAL AMPLIFIERS 2 INTERFACE CIRCUITS 3 TRANSISTOR ARRAYS OTHER CIRCUITS APPLICATIONS NOTES 5 d u c t S e le c to r G uide INTER FA C E C IR C U ITS Regulating Pulse Width Modulators 13 13 16 21 24 44 1524/2524/3524 1525/2525/3525
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OCR Scan
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/2525A
/3525A
/2527A
/3527A
523/3523A
RC723DP
SN72748L
MC7805G
LM340H-05
SG3525 equivalent
transistor KT 209 M
78M15HM
SN52107L
SG711
SG7812CK
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PDF
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1.4464
Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473
Text: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S
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2SC5289
2SC5289
SC-61
2SC5289-T1
1.4464
NEC 3358
transistor Mu
61344
nec 8339
transistor Mu s12
nec k 4145
nec transistor k 4145
84147
ha 13473
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PDF
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NEC k 2134 transistor
Abstract: k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. PACKAGE DIMENSIONS Unit: mm
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OCR Scan
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NE32584C
NE32584C
NE32584C-T1A
NE32584C-SL
NE32584C-T1
NEC k 2134 transistor
k 2134 nec
nec gaas fet marking
NEC D 809 k
NEC 2134 transistor
NE32584
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PDF
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2SA939
Abstract: 2SA939 B 2SA839 HI-FI AMP 200X2mm 2SA839-0 sfik
Text: 2 s a 839 " ^ v i i y p N ^ P = m m * y & ^ y y z 5> SILICON PNP TR IP LE DIFFUSED MESA TRANSISTOR o ismmntimmm o mmmnttmmm o Audio Power Amplifier Applications o Driver Stage Amplifier Applications • S if f l E T -i - : • asm* v CE0 = - 150 V Hi-Fi 2 S C 1 6 69 k
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OCR Scan
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2sa839
-150V
8SC1669
220AB
8-10A1A
2SA939
2SA839â
2SA839-Y
200X2mm
2SA939 B
2SA839
HI-FI AMP
2SA839-0
sfik
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PDF
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SHI20
Abstract: ic ZN 415 yx 861 1g1b
Text: H D66300T- Horizontal Driver fo r TFT-Type LC D C olor TV The HD66300T is a horizontal d river used for TFTtype (Thin Film Transistor) LCD color TVs. Specifi cally, it drives the drain bus signals of a TFT-type LCD panel. The HD66300T receives as input three video signals R,
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D66300T-----------------
HD66300T
HD66300T
SHI20
ic ZN 415
yx 861
1g1b
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PDF
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STA405A
Abstract: SMA6012 sma4031 STA451C STA438A STA455C STA439A sla6023 STA471A STA437A
Text: 1 * * P M 1 SANKEN DISCRETE TRANSISTOR ARRAYS V ceo I c I cp hfE (A) min Type No. (V ) Equivalent Circuit Diagram Type No. V ceo IcOcp} hpE (V) (A) m in E quivalent Circuit D iagram STA301A 60±10 4(8) 1000 1 SMA4020 -60 -4 2000 30 STA302A -50 -4 (-8) 1000
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OCR Scan
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STA301A
STA302A
STA303A
STA304A
STA305A
STA308A
STA311A
STA312A
STA321A
STA322A
STA405A
SMA6012
sma4031
STA451C
STA438A
STA455C
STA439A
sla6023
STA471A
STA437A
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PDF
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te 2443 MOTOROLA transistor
Abstract: 1S2210 MOSFET 830 63 ng MRF171
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line 45 W N-C H A N N E L M O S BROADBAND RF POWER N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR FET . designed p rim a rily fo r w ideband large-signal output and driver stages in the 2 .0 -2 0 0 MHz frequency range
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OCR Scan
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MRF171
MRF171
te 2443 MOTOROLA transistor
1S2210
MOSFET 830 63 ng
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PDF
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NE32584C-T1
Abstract: nec 3435 transistor am 4428
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.
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OCR Scan
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NE32584C
NE32584C-T1A
NE32584C-T1
nec 3435 transistor
am 4428
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PDF
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