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    TRANSISTOR C 557 Search Results

    TRANSISTOR C 557 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 557 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    GT45F122

    Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
    Text: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor


    Original     		BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124 PDF

    APPLICATION OF BC548 transistor

    Abstract: bc547 pnp BC547 BC548 pnp transistor pnp bc547 transistor bc548 pnp BC548 BC548 TRANSISTOR BC546 for bc548 npn transistor
    Text: SEMICONDUCTOR BC546/7/8 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C A FEATURES ・High Voltage : BC546 VCEO=65V. ・For Complementary With PNP Type BC556/557/558. N E K G J D MAXIMUM RATING Ta=25℃


    Original     		BC546/7/8 BC546 BC556/557/558. BC547 BC548 BC546 100MHz APPLICATION OF BC548 transistor bc547 pnp BC547 BC548 pnp transistor pnp bc547 transistor bc548 pnp BC548 BC548 TRANSISTOR for bc548 npn transistor PDF

    APPLICATION OF BC548 transistor

    Abstract: BC547 BC548 BC548 B 001 BC548 pnp transistor bc547 pnp transistor bc547 features pnp bc547 transistor BC546 for bc548 npn transistor
    Text: SEMICONDUCTOR BC546/7/8 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C A FEATURES ᴌHigh Voltage : BC546 VCEO=65V. ᴌFor Complementary With PNP Type BC556/557/558. N E K G J D MAXIMUM RATING Ta=25ᴱ


    Original     		BC546/7/8 BC546 BC556/557/558. BC547 BC548 BC546 APPLICATION OF BC548 transistor BC547 BC548 BC548 B 001 BC548 pnp transistor bc547 pnp transistor bc547 features pnp bc547 transistor for bc548 npn transistor PDF

    bc556

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AMPLIFIER . HIGH VO LTAG E: BC556, VCEo= -65V . LOW NOISE: BC559, BC560 • C om plem ent to BC546 . BC 550 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base C apacitance


    OCR Scan     		BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 bc556 PDF

    transistor B 560

    Abstract: BC 557 PNP TRANSISTOR transistor bc 558 pnp TRANSISTOR C 557 B transistor c 557 transistor bc 557 c le transistor 557 b B 557 PNP TRANSISTOR TRANSISTOR 557 TRANSISTOR BC 560
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AMPLIFIER • HIGH VO LTAG E: BC556, V CEo = -65V • LO W NOISE: BC559, BC560 • C om plem ent to BC546 . BC 550 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase C apacitance


    OCR Scan     		BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 transistor B 560 BC 557 PNP TRANSISTOR transistor bc 558 pnp TRANSISTOR C 557 B transistor c 557 transistor bc 557 c le transistor 557 b B 557 PNP TRANSISTOR TRANSISTOR 557 TRANSISTOR BC 560 PDF

    D 1437 transistor

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the


    OCR Scan     		2SC5004 D 1437 transistor PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    Untitled

    Abstract: No abstract text available
    Text: FZ 600 R 06 KF 3 Transistor Transistor Thermische Eigenschaften Thermal properties DC, pro Baustein / per module 0,057 RthJC Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 600 V 600 A RthCK VcES le c/w pro Baustein / per module


    OCR Scan     		0002G2Ã PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMI CONDUCTOR INC MMBT6429 ' 14E D § 7^t,4142 0007507 4 | NPN EPITAXIAL SILICON TRANSISTOR " r T -.a • c\ w^ : AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage CoUector-Emltter Voltage Emitter-Base Voltage


    OCR Scan     		MMBT6429 OT-23 MMBT5088 PDF

    la 4142

    Abstract: MMBT5088 MMBT6429 Scans-0014323
    Text: SAMSUNG SEMI C ONDU CT OR INC 14E MMBT6429 ' D § 7 ^ t , 41 42 0007507 4 | NPN EPITAXIAL SILICON TRANSISTOR : " AMPLIFIER TRANSISTOR r'r-avfl" SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage CoUector-Emltter Voltage Emitter-Base Voltage


    OCR Scan     		00072fi7 MMBT6429 MMBT5088 OT-23 100mA, 100MHz la 4142 Scans-0014323 PDF

    TRANSISTOR C 557 B

    Abstract: BC 558 transistor transistor c 557 transistor B 560 transistor 557 b transistor bc 557 c le B 557 PNP TRANSISTOR transistor 200ma pnp bc transistor c 558 BC559
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AF AMPLIFIER • HIGH VOLTAGE: BC556, V Ce o = - 6 5 • LOW NOISE: 8C 559, BCS60 • Com plem ent to BC546 . BC 550 V ABSOLUTE MAXIMUM RATINGS Ta=25°C C hara c te ristic Sym bol C ollector Base Capacitance


    OCR Scan     		BC556/557/558/559/560 BC556, 8C559, BCS60 BC546 BC556 BC557/560 BC558/559 BC557/56Ã TRANSISTOR C 557 B BC 558 transistor transistor c 557 transistor B 560 transistor 557 b transistor bc 557 c le B 557 PNP TRANSISTOR transistor 200ma pnp bc transistor c 558 BC559 PDF

    Untitled

    Abstract: No abstract text available
    Text: SYMSEMI SEMICONDUCTOR T O -92 Plastic Encapsulate Transistors BC 556 ,A ,B ,C BC 557 , B BC 558 , B TRANSISTOR PNP TO — 92 f1 — q> ei s j FEATURES Power d is s ip a tio n Pcm : 0.625 W (Tamb=25 °C) C o lle c to r c u rre n t I cm : “0. 1 A C o lle c to r base v o lta g e


    OCR Scan     		BC558 BC556 270TYP 050TYP PDF

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD - 9.1715 International I R Rectifier IRFE230 R EPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6798U HEXFET TRANSISTOR JANTXV2N6798U [REF:MIL-PRF-19500/557] N -C H A N N E L Product Summary 200Volt, 0.40Q, HEXFET T he le a d le ss c h ip c a rrie r LC C p a cka g e re p re se n ts


    OCR Scan     		IRFE230 JANTX2N6798U JANTXV2N6798U MIL-PRF-19500/557] 200Volt, PDF

    IR2E27A

    Abstract: Sharp IR2E02 IR2E01 IR2E25 Sharp IR2E27A IR2E02 IR2E27A SHARP LED ir2e01 ir2e09 IR2E28
    Text: Product Lineup Product Lineup • Transistor Arrays 'S H A R P 4 Product Lineup SHARP 5 Product Lineup ■ Special Function Transistor Arrayys F u nc ti o n Mo del No. O utput v o lt a g e 1mA V) 400 12 -c irc u it P rinte r D river and IR 2402 1 - c i r c u i t R ib b o n Shif t D r i v e r


    OCR Scan     		24DIP/24SOP IR2C10 IR2E34 IR2E27A Sharp IR2E02 IR2E01 IR2E25 Sharp IR2E27A IR2E02 IR2E27A SHARP LED ir2e01 ir2e09 IR2E28 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF 517 NPN Silicon RF Transistor • For amplifier and oscillator applications in TV-tuners Type Marking Ordering Code Pin Configuration BF 517 LRs Q62702-F42 1= B Package 2=E 3=C SOT-23 Maximum Ratings of any single Transistor Parameter Symbol Collector-emitter voltage


    OCR Scan     		Q62702-F42 OT-23 fl535b05 500MHz fl53SLG5 D151b7Ã PDF

    RC723DP

    Abstract: SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK
    Text: VOLTAGE REGULATORS OPERATIONAL AMPLIFIERS 2 INTERFACE CIRCUITS 3 TRANSISTOR ARRAYS OTHER CIRCUITS APPLICATIONS NOTES 5 d u c t S e le c to r G uide INTER FA C E C IR C U ITS Regulating Pulse Width Modulators 13 13 16 21 24 44 1524/2524/3524 1525/2525/3525


    OCR Scan     		/2525A /3525A /2527A /3527A 523/3523A RC723DP SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK PDF

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD - 9.1719 International I R Rectifier IRFE430 R EPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802U HEXFET TRANSISTOR JANTXV2N6802U [REF:MIL-PRF-19500/557] N -C H A N N E L 500Vo It, 1.50i2, HEXFET Product Summary T he le a d le ss c h ip c a rrie r LC C p a cka g e re p re se n ts


    OCR Scan     		IRFE430 JANTX2N6802U JANTXV2N6802U MIL-PRF-19500/557] 500Vo PDF

    transistor c655

    Abstract: 9225 npn transistor RF NPN POWER TRANSISTOR 3 GHZ 5w transistor power rating 5w TRANSISTOR A52 C655 13MM ATC100A PH2931-5M TT50
    Text: AÚK.CA', M an A M P company Radar Pulsed Power Transistor, 5W, 100|is Pulse, 10% Duty 2.9-3.1 GHz PH2931-5M V2.00 Features • • • • • • • • ortn NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry


    OCR Scan     		100jis PH2931-5M ATC100A transistor c655 9225 npn transistor RF NPN POWER TRANSISTOR 3 GHZ 5w transistor power rating 5w TRANSISTOR A52 C655 13MM ATC100A PH2931-5M TT50 PDF

    BC557

    Abstract: TRANSISTOR C 557 B transistor BC557 base collector emitter bc558 transistor 557 b transistor BC558 base collector emitter BC558 pnp transistor BC558B transistor c 557 BC557B MCC
    Text: MCC TO-92 P lastic-E n capsu late T ran sisto rs BC556,B/BC557,A,B,C/BC558,B TRANSISTOR PNP FEATU RES dissipation 0.6 2 5 W (T am b=25'C ) Pcm : current IcM : -0.1 A BC 556 : -80 V V cbo; BC 557 : -50V BC 558 : -30 V storage junction temperature range Tj.Tstg: -5 5 ° C to + 150°C


    OCR Scan     		BC556 B/BC557 C/BC558 BC557 BC558 BC556 BC558 TRANSISTOR C 557 B transistor BC557 base collector emitter transistor 557 b transistor BC558 base collector emitter BC558 pnp transistor BC558B transistor c 557 BC557B MCC PDF

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD - 9.1666 International IGR Rectifier IRFE130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6796U HEXFET TRANSISTOR JANTXV2N6796U [REF:MIL-PRF-19500/557] N -C H A N N E L Product Sum m ary 100Volt,0.18£l, HEXFET T h e lead less chip c a rrie r LC C p a cka g e re p re se n ts


    OCR Scan     		IRFE130 JANTX2N6796U JANTXV2N6796U MIL-PRF-19500/557] 100Volt PDF

    BC547 transistor kec

    Abstract: APPLICATION OF BC548 transistor BC547 BC547 transistor BC548 BC548 pnp transistor BC547 w 2 d bc548 pnp bc547 application note of transistor BC548
    Text: SEMICONDUCTOR TECHNICAL DATA BC546/7/8 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES • High Voltage : BC546 V C = 6 5 V . • For Complementary With PNP Type BC556/557/558. eo MAXIMUM RATINGS Ta=25°C CHARACTERISTIC


    OCR Scan     		BC546/7/8 BC546 BC556/557/558. BC547 BC548 BC547 transistor kec APPLICATION OF BC548 transistor BC547 BC547 transistor BC548 BC548 pnp transistor BC547 w 2 d bc548 pnp bc547 application note of transistor BC548 PDF

    EJ transistor marking sot23

    Abstract: EJ transistor marking transistor mark code HF
    Text: KST42/43 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25t: Sym bol C haracteristic Collector Base Voltage Rating U nit 300 200 V V Vebo lc Pc T sto 300 200 6 500 350 150 V V V mA mW t: RtH(J-A) 357 tl/w VcBO


    OCR Scan     		KST42/43 OT-23 KST42 KST43 EJ transistor marking sot23 EJ transistor marking transistor mark code HF PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1718A International IO R Rectifier IRFE330 R EPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6800U HEXFET TRANSISTOR JANTXV2N6800U [REF:MIL-PRF-19500/557] N -C H A N N E L Product Summary 400Volt, 1.0ft, HEXFET The leadless chip carrier LCC package represents


    OCR Scan     		IRFE330 JANTX2N6800U JANTXV2N6800U MIL-PRF-19500/557] 400Volt, PDF