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    TRANSISTOR C 380 Search Results

    TRANSISTOR C 380 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 380 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SD1143

    Abstract: 2SD1143
    Text: SD1143 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1143 is 12.2 V Class C Transistor, designed for VHF mobile communications. PACKAGE STYLE .380 4L STUD FEATURES: .112x45° A B C • Common Emitter • PG = 10 dB at 10 W/175 MHz • Omnigold Metalization System


    Original     		PDF SD1143 SD1143 112x45° 2SD1143

    SD1222-5

    Abstract: IC 785 SD1222
    Text: SD1222-5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1222-5 is a transistor designed primarily for 12.5 V AM Class-C amplifiers in the118-136 MHz band and 28 V Class-C RF amplifiers in ground stations. PACKAGE STYLE .380 4L FLG B .112 x 45° FEATURES:


    Original     		PDF SD1222-5 SD1222-5 the118-136 IC 785 SD1222

    VHB40-28S

    Abstract: TRANSISTOR S 838 TRANSISTOR S 813 ic c 838 ASI10727 transistor c 838 transistor A 584 asi1072
    Text: VHB40-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB40-28S is an epitaxial plana transistor, designed for 28 V, FM, Calss C RF amplifiers utilized in base stations. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: C B • Common Emitter • PG = 7.0 dB at 40 W/175 MHz


    Original     		PDF VHB40-28S VHB40-28S 112x45° TRANSISTOR S 838 TRANSISTOR S 813 ic c 838 ASI10727 transistor c 838 transistor A 584 asi1072

    Untitled

    Abstract: No abstract text available
    Text: HF8-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF8-28S is a common Emitter transistor, designed for broadband amplifier operations in military, commercial and amateur communication equipment. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: C B


    Original     		PDF HF8-28S HF8-28S 112x45Â ASI10601

    HF8-28S

    Abstract: ASI10736
    Text: HF8-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF8-28S is a common Emitter transistor, designed for broadband amplifier operations in military, commercial and amateur communication equipment. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: C B


    Original     		PDF HF8-28S HF8-28S 112x45° ASI10736 ASI10736

    HF50-12F

    Abstract: ASI10596
    Text: HF50-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI HF50-12F is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting, is extremely


    Original     		PDF HF50-12F HF50-12F ASI10596

    PT9733

    Abstract: PT97
    Text: PT9733 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9733 is an NPN power transistor designed for 25 V Class-C ground station transmitters, it utilizes emitter ballasting and gold metalization to provide optimum VSWR capability. PACKAGE STYLE .380 4L STUD


    Original     		PDF PT9733 PT9733 112x45° PT97

    Untitled

    Abstract: No abstract text available
    Text: HF50-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI HF50-12S is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting, is extremely


    Original     		PDF HF50-12S HF50-12S 112x45°

    VHB50-28S

    Abstract: ASI10730
    Text: VHB50-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB50-28S is an NPN power transistor designed for 25 V Class-C ground station transmitters, it utilizes emitter ballasting and gold metalization to provide optimum VSWR capability. PACKAGE STYLE .380 4L STUD


    Original     		PDF VHB50-28S VHB50-28S 112x45° ASI10730

    BLW31

    Abstract: No abstract text available
    Text: BLW31 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW31 is an NPN power transistor, designed 108-175 MHz applications. The device utilizes diffused emitter resistors to achieve good VSWR capability PACKAGE STYLE .380 4L STUD .112x45° A B C FEATURES:


    Original     		PDF BLW31 BLW31 112x45°

    VHB50-28F

    Abstract: ASI10728
    Text: VHB50-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB50-28F is an NPN power transistor designed for 28 V Class-C ground station transmitters, it utilizes emitter ballasting and gold metallization to provide optimum VSWR capability. PACKAGE STYLE .380 4L FLG


    Original     		PDF VHB50-28F VHB50-28F ASI10728

    BCW60A

    Abstract: BCW60B BCW60C BCW60D
    Text: BCW60A/B/C/D BCW60A/B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage


    Original     		PDF BCW60A/B/C/D OT-23 BCW60A BCW60B BCW60C BCW60D

    F1K marking

    Abstract: No abstract text available
    Text: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent C ollector D issipation Storage Tem perature


    OCR Scan     		PDF BCW61A/B/C/D KS5086 BCW61 F1K marking

    BCW General Purpose Transistor

    Abstract: l9902
    Text: BCW60A/B/C/D NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent C ollector Dissipation


    OCR Scan     		PDF BCW60A/B/C/D BCW General Purpose Transistor l9902

    BCX70K

    Abstract: KS3904
    Text: BCX70K NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollector-B ase Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation Storage Tem perature


    OCR Scan     		PDF BCX70K KS3904 BCX70K

    Untitled

    Abstract: No abstract text available
    Text: BCX70K NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Col lector-Base Voltage C ollector-E m ltter Voltage E m itter-Base Voltage C ollector C urrent C ollector D issipation Storage Tem perature


    OCR Scan     		PDF BCX70K KS3904

    Untitled

    Abstract: No abstract text available
    Text: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C h a r a c t e r is t i c Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


    OCR Scan     		PDF BCW61A/B/C/D OT-23 KS5086 BCW61B BCW61C BCW61 BCW61A BCW61B -10mA, -50mA,

    Untitled

    Abstract: No abstract text available
    Text: BCX70K NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C h a r a c t e r is t i c Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


    OCR Scan     		PDF BCX70K OT-23 KS3904

    Untitled

    Abstract: No abstract text available
    Text: BCX71K PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C h a r a c t e r is t i c Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


    OCR Scan     		PDF BCX71K OT-23 KST5086 -10nA -50mA -10mA, -50mA,

    Untitled

    Abstract: No abstract text available
    Text: BCW60A/B/C/D NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


    OCR Scan     		PDF BCW60A/B/C/D OT-23 BCW60B BCW60C BCW60D BCW60A

    BCW60A

    Abstract: BCW60D BCW60B BCW60C transistor mark code AD transistor ad 1v sot 23 mark AD LC marking code transistor
    Text: BCW60A/B/C/D NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C o lle c to r-B a s e V o lta g e C o lle c to r-E m itte r V o lta g e E m itte r-B a s e V o lta g e C o lle c to r C u rre n t


    OCR Scan     		PDF BCW60A/B/C/D OT-23 BCW60B BCW60A BCW60B BCW60C BCW60D BCW60D transistor mark code AD transistor ad 1v sot 23 mark AD LC marking code transistor

    T3904

    Abstract: 5kfl
    Text: BCX70K NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T -2 3 ABSOLUTE MAXIMUM RATINGS {TA=251C C h a ra c te ristic Collector-Base Voltage Coilector-Emitter Voltage Em itter-Base Voltage Collector Current Collector Dissipation Storage Temperature


    OCR Scan     		PDF BCX70K T3904 5kfl

    Untitled

    Abstract: No abstract text available
    Text: BCX71K PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T -2 3 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ol le c to r-B a s e V o lta g e C o lle c to r-E m ltte r V o lta g e E m itte r-B a s e V o lta g e C o lle c to r C u rre n t


    OCR Scan     		PDF BCX71K

    BCX71K

    Abstract: KST5086
    Text: BCX71K PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T -2 3 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C o lle c to r-B a s e V o lta g e C o lle c to r-E m itte r V o lta g e E m itte r-B a s e V o lta g e C o lle c to r C u rre n t


    OCR Scan     		PDF BCX71K KST5086 OT-23 -10nA -2m-32V, -50mA -10mA, -50mA, BCX71K