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    TRANSISTOR C 3280 Search Results

    TRANSISTOR C 3280 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 3280 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF1010 E DATASHEET

    Abstract: IRF1010 IRG4BC30FD1 igbt rectifier circuit IRG4BC
    Text: PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30FD1 20kHz O-220AB char10 FD100H06A5. O-220 IRF1010 E DATASHEET IRF1010 IRG4BC30FD1 igbt rectifier circuit IRG4BC

    swiching transistor

    Abstract: 9561 600v 8A ultra fast recovery diode to220
    Text: PD - 95614 IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30FD1PbF 20kHz O-220AB Minimi10 FD100H06A5. O-220 swiching transistor 9561 600v 8A ultra fast recovery diode to220

    Untitled

    Abstract: No abstract text available
    Text: PD - 95614A IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF 5614A IRG4BC30FD1PbF 20kHz O-220AB FD100H06A5.

    Untitled

    Abstract: No abstract text available
    Text: PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30FD1 20kHz O-220AB FD100H06A5. O-220

    IRF1010

    Abstract: IRG4BC30FD1 TO220AB IGBT
    Text: PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30FD1 20kHz O-220AB FD100H06A5. O-220 IRF1010 IRG4BC30FD1 TO220AB IGBT

    555 triangular wave

    Abstract: IRG4BC30FD1PBF
    Text: PD - 95614 IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30FD1PbF 20kHz O-220AB FD100H06A5. O-220 555 triangular wave IRG4BC30FD1PBF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95614A IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF 5614A IRG4BC30FD1PbF 20kHz O-220AB FD100H06A5.

    Untitled

    Abstract: No abstract text available
    Text: BSV52 BSV52 C E SOT-23 B Mark: B2 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


    Original     		PDF BSV52 OT-23

    TP5089

    Abstract: TP5089N C1995 N16A telephone KEYPAD
    Text: Distributed by: www.Jameco.com ✦ 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. Jameco Part Number 32803 TP5089 DTMF TOUCH-TONE Generator General Description Features The TP5089 is a low threshold voltage field-implanted metal gate CMOS integrated circuit It interfaces directly to a


    Original     		PDF TP5089 TP5089N C1995 N16A telephone KEYPAD

    BIT 3195 G

    Abstract: TRANSISTOR 5804 transistor 5910 2878 transistor ma 8920 regulator darlington array 2804 BIT 3195 8205 A mosfet 8205 mosfet 5810-FQ
    Text: Allegro MicroSystems Fax-on-Demand: 1-888-286-9288 Outside North America: 1-202-216-1827 ICs and PMCMs PRODUCT INDEX in NUMERICAL ORDER Part Number* Description 8932-A 8958 Motor Drivers Quad, 1.8 A, 50 V Darlington Power Driver Quad, 1.8 A, 50 V Darlington Power Driver


    Original     		PDF 932-A BIT 3195 G TRANSISTOR 5804 transistor 5910 2878 transistor ma 8920 regulator darlington array 2804 BIT 3195 8205 A mosfet 8205 mosfet 5810-FQ

    74HC04

    Abstract: CSA10 CXP84548 CXP845F60 CXP845P60 SPC700
    Text: CXP845P60 CMOS 8-bit Single Chip Microcomputer Description The CXP845P60 is a CMOS 8-bit microcomputer integrating on a single chip an A/D converter, serial interface, timer/counter, time base timer, capture timer/counter, PWM output and the like besides the


    Original     		PDF CXP845P60 CXP845P60 CXP84548 80PIN QFP-80P-L01 QFP080-P-1420-A 74HC04 CSA10 CXP845F60 SPC700

    ph 4148 zener diode

    Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
    Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS


    Original     		PDF DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148

    DD 127 D TRANSISTOR

    Abstract: CXP84500 CXP84540 CXP84548 CXP845F60 SPC700
    Text: CXP84540/84548 CMOS 8-bit Single Chip Microcomputer Description The CXP84540/84548 is a CMOS 8-bit microcomputer integrating on a single chip an A/D converter, serial interface, timer/counter, time-base timer, capture timer/counter, PWM output and the like besides the


    Original     		PDF CXP84540/84548 CXP84540/84548 16-bit LQFP080-P-1212 80PIN 10MAX -80P-02 80-9x9-0 DD 127 D TRANSISTOR CXP84500 CXP84540 CXP84548 CXP845F60 SPC700

    CST10.0MT

    Abstract: 74HC04 CSA10 CXP84548 CXP845F60 CXP845P60 SPC700 CSA24.00MX LQFP-80P-L
    Text: CXP845P60 CMOS 8-bit Single Chip Microcomputer Description The CXP845P60 is a CMOS 8-bit microcomputer integrating on a single chip an A/D converter, serial interface, timer/counter, time base timer, capture timer/counter, PWM output and the like besides the


    Original     		PDF CXP845P60 CXP845P60 CXP84548 QFP080-P-1420-A 80PIN LQFP-80P-L01 LQFP080-P-1212 CST10.0MT 74HC04 CSA10 CXP845F60 SPC700 CSA24.00MX LQFP-80P-L

    CXP84500

    Abstract: CXP84540 CXP84548 CXP845F60 SPC700 CSA24.00MX PD61051
    Text: CXP84540/84548 CMOS 8-bit Single Chip Microcomputer Description The CXP84540/84548 is a CMOS 8-bit microcomputer integrating on a single chip an A/D converter, serial interface, timer/counter, time-base timer, capture timer/counter, PWM output and the like besides the


    Original     		PDF CXP84540/84548 CXP84540/84548 16-bit 143ns 28MHz QFP080-P-1420-A QFP-80P-L01 80PIN LQFP-80P-L01 CXP84500 CXP84540 CXP84548 CXP845F60 SPC700 CSA24.00MX PD61051

    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


    Original     		PDF

    TRANSISTOR A3

    Abstract: transistor c 3274 BLW60 transistor c 1974 transistor wz blw60 philips carbon film resistor capacitor polyester philips trimmer 3-30 pf TRIMMER capacitor 5-60 pF trimmer PT 10
    Text: -— . L I_ N AMER PHILIPS/DISCRETE ObE D 86D 0 1 4 7 0 D bbS3=î31 00137Ga T • T~ 3 /f BLW60 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial


    OCR Scan     		PDF bbS3T31 BLW60 TRANSISTOR A3 transistor c 3274 BLW60 transistor c 1974 transistor wz blw60 philips carbon film resistor capacitor polyester philips trimmer 3-30 pf TRIMMER capacitor 5-60 pF trimmer PT 10

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


    OCR Scan     		PDF O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346

    EN3280

    Abstract: No abstract text available
    Text: Ordering number : EN3280 No.3280 FC 126 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance Features • On-chip bias resistance (R1 = 47kS2) • Composite type with 2 transistors contained in the CP package currently in use, improving the


    OCR Scan     		PDF EN3280 47kS2) FC126 2SC3898, EN3280

    transistor c 1974

    Abstract: No abstract text available
    Text: 11 N AI1ER PHILIPS/DISCRETE bbS3=!31 001370a T QhZ D 86D 0 1 4 7 0 D 11 T BLW60 3 7- If _ V.H.F. P O W E R TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and 0 operated mobile, industrial and m ilitary transmitters with a nominal supply voltage of 12,5 V . The transistor is resistance stabilized.


    OCR Scan     		PDF 001370a BLW60 0D13720 transistor c 1974

    HC 8436

    Abstract: marcon capacitor ce marcon CE capacitor seiko hc 1000 transistor lr 3303 CACFM D1NS4 diode transistor 2sC3279 S-8435 equivalent tr 2SC3279 equivalent
    Text: STEP-UP SWITCHING REGULATOR S -8 4 3 5 /8 4 3 6 Series The S-8435/8436 Series is a CMOS step-up sw itching regulator that consists of a reference voltage source, a CR oscillation circuit, a pow er MOS FET, a diode, and a com parator. T he output voltage is


    OCR Scan     		PDF S-8435/8436 S-8435 S-8436 RCH654 2SK1112* RCH855 2SK1112. HC 8436 marcon capacitor ce marcon CE capacitor seiko hc 1000 transistor lr 3303 CACFM D1NS4 diode transistor 2sC3279 S-8435 equivalent tr 2SC3279 equivalent

    UAA 1008

    Abstract: No abstract text available
    Text: , CHOPPER-STABILIZED PRECISION HALL-EFFECT LATCHES The A 3280- and A 3281- Hall-effect latches are extremely temperature-stable and stress-resistant sensors especially suited for operation over extended temperature ranges to +150°C. Superior high-temperature


    OCR Scan     		PDF MH-014D 1-27h UAA 1008

    bd7995

    Abstract: P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361
    Text: H F To X 8366IT U N E B Issue 2/8534 STR910A B26000 2000 General Wiring Diagram Figure 10.1 +28 V sense) GROUND Meter Batt. sense + Sense Isolated Ground Batt. GND O FF 28 V O FF (T X O F F ) Relays K4, K1 & K2 BATT. MODE »DC» Relays K5, K6 +8 V in GROUND


    OCR Scan     		PDF 8366IT STR910A B26000 B26050 B2G010 B26010 B2701D 9SM102/V4T7 bd7995 P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361

    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


    OCR Scan     		PDF