Untitled
Abstract: No abstract text available
Text: Formosa MS NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C List List. 1 Package outline. 2
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BC846A/B-BC847A/B/C
BC848A/B/C-
BC849B/C-BC850B/C
1000hrs
1000hrs
15min
20sec
1000cycle
96hrs
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SOT-23
Abstract: TRANSISTOR SMD fr 21 smd transistor ds 65
Text: Formosa MS SMD NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C List List. 1 Package outline. 2
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Original
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BC846A/B-BC847A/B/C
BC848A/B/C-
BC849B/C-BC850B/C
1000hrs
15min)
15min
20sec
1000cycle
96hrs
SOT-23
TRANSISTOR SMD fr 21
smd transistor ds 65
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transistor T K 2056
Abstract: K 2056 transistor transistor K 2056
Text: SANYO SEMICONDUCTOR 12E CORP D | 7 T ci 7 D 7 t 1 0 0 0 S S 0 0 g 32S C 4256 SS2SC4271 Silicon Transistor Silicon Transistor ' High Voltage Switching Applications Very High-Oefinrtion CR T Display Applications JEDEC: T 022 0 package JEDEC: T0126 package High breakdown voltage
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OCR Scan
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SS2SC4271
T0126
300mA,
100mA)
SS2SC4272
1S-126A
IS-20MA
transistor T K 2056
K 2056 transistor
transistor K 2056
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBTA44 NPN HIGH VOLTAGE TRANSISTOR VOLTAGE POWER 400 Volts 225 mWatts FEATURES • Silicon, planar design • Collector-emitter voltage VCE = 400V • Collector current I C = 300mA • MECHANICAL DATA • Case: SOT-23, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026
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MMBTA44
300mA
OT-23,
MIL-STD-750,
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Untitled
Abstract: No abstract text available
Text: MMBTH10 VHF/UHF NPN SILICON TRANSISTOR 25 Volts VOLTAGE POWER SOT-23 225 mW Unit：inch mm MECHANICAL Case : SOT-23, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 Approx weight : MAXIMUM RATINGS R A T IN G S YM B O L VA L UE U N IT C o lle c to r-E mi tte r Vo lta g e
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MMBTH10
OT-23
OT-23,
MIL-STD-750,
2012-REV
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PDF
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TRANSISTOR FS 2025
Abstract: SILICON TRANSISTOR FS 2025 2SK775 JIS G3141 DDD3710 2052A DS-17 SANYO AKO 450
Text: SANYO SEMICONDUCTOR ISE D I CORP ? c]cì?Q7t. □aDSHS'ì □ | “~ r - 3 f - u 2SK775 Ñ -Channel M O S Silicon Field-Effect Transistor Very High Speed Switching Applications 2559 Features . Low ON resistance, very high-speed switching Absolute M a x i m Ratings at Ta=25°C
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OCR Scan
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2SK775
0DGB752
TRANSISTOR FS 2025
SILICON TRANSISTOR FS 2025
2SK775
JIS G3141
DDD3710
2052A
DS-17 SANYO
AKO 450
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc,
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Original
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MMBT3904
200mA
300MHz
10mAdc,
20Vdc
100MHz
2002/95/EC
OT-23,
MIL-STD-750,
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PDF
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"marking s1a" sot-23
Abstract: 1N916 MMBT3904 MMBT3904 40V SOT23 transistor marking s1a
Text: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc,
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Original
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MMBT3904
200mA
300MHz
10mAdc,
20Vdc
100MHz
2002/95/EC
OT-23,
MIL-STD-750,
"marking s1a" sot-23
1N916
MMBT3904
MMBT3904 40V SOT23
transistor marking s1a
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2SD1397
Abstract: 2SC2271 transistor 2SC2271 2S01397 ic 30359
Text: SANYO SEMICONDUCTOR CÔRP ISE D I 7 ^ 707 ^ 000SD7S T ' 3 3 - / 3 2SD1397« N PN Triple Diffused Planar Silicon Transistor 2022 Color TV Horizontal Deflection Output Applications with Damper Diode 1223C Features: . High breakdown voltage and high reliability.
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OCR Scan
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000SD7S
2SD1397«
1223C
IS-126
1S-126A
IS-20MA
2SD1397
2SC2271
transistor 2SC2271
2S01397
ic 30359
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PDF
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2SA1238
Abstract: bc 147 B transistor transistor BC 147
Text: SA NY O S E M I C O N D U C T O R CORP 3SE D • 7 T T 7 0 7 b 0 G 0 Ô Û 2 7 7 Hi . tiifiîin'i :.j_w PNP Epitaxial Planar Silicon Transistor 2029A a! "T-Zf-li Differential Amp Applications D968C Applications . Differential amp, current mirror. Features
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OCR Scan
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D968C
T-91-20
SC-43
2SA1238
bc 147 B transistor
transistor BC 147
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBT4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V 0.120(3.04) 0.110(2.80) • Collector current I C = 600mA
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MMBT4401
600mA
2002/95/EC
IEC61249
OT-23,
MIL-STD-750,
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PDF
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Untitled
Abstract: No abstract text available
Text: MMDT4403TB6 DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts SOT-563 200 mWatts Unit：inch mm • Collector-emitter voltage V CE = -40V 0.044(1.10) 0.035(0.90) • PNP epitaxial silicon, planar design • Collector current I C = -500mA
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Original
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MMDT4403TB6
-500mA
2002/95/EC
IEC61249
OT-563
OT-563,
MIL-STD-750,
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBT4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES • NPN epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage V CE = 40V 0.110(2.80) • Collector current I C = 600mA
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Original
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MMBT4401
600mA
2002/95/EC
IEC61249
OT-23,
MIL-STD-750,
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PDF
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1N916
Abstract: MMBT3904W c 2026 y transistor
Text: MMBT3904W NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 150 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V • Collector current I C = 200mA • In compliance with EU RoHS 2002/95/EC directives
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Original
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MMBT3904W
200mA
2002/95/EC
OT-323,
MIL-STD-750,
2010-REV
1N916
MMBT3904W
c 2026 y transistor
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PDF
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MMBTA05
Abstract: MMBTA06 MMBTA55 MMBTA56
Text: MMBTA05,MMBTA06,MMBTA55,MMBTA56 NPN AND PNP HIGH VOLTAGE TRANSISTOR VOLTAGE 60~80 Volts POWER 225 mWatts FEATURES • NPN and PNP silicon, planar design • Collector current I C = 100mA • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA
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MMBTA05
MMBTA06
MMBTA55
MMBTA56
100mA
2002/95/EC
OT-23,
MIL-STD-750,
MMBTA56
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBT3904W NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 150 mWatts SOT-323 Unit：inch mm 0.004(0.10)MIN. • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V • Collector current I C = 200mA 0.087(2.20) 0.070(1.80)
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Original
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MMBT3904W
OT-323
200mA
2002/95/EC
IEC61249
OT-323,
MIL-STD-750,
2010-REV
RB500V-40
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PDF
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Untitled
Abstract: No abstract text available
Text: MMDT4401 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE =40V • Collector current I C = 600mA • In compliance with EU RoHS 2002/95/EC directives
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Original
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MMDT4401
600mA
2002/95/EC
OT-363,
MIL-STD-750,
OT-363
2011-REV
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBT2369A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 15 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 15V • Collector current I C = 200mA • In compliance with EU RoHS 2002/95/EC directives
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Original
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MMBT2369A
200mA
2002/95/EC
OT-23,
MIL-STD-750,
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PDF
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la 1201 sanyo
Abstract: IS-313D 2SB1273 QDQ4127 b1251 n1cj EIAJ CP 301 30H150
Text: SANYO SEMICONDUCTOR CORP la E t I 71=170?t QD04127 3 P T'-33-!c 2SB1273 PNP Epitaxial Planar Silicon Transistor 2010A Low Frequency Power Amp Applications 2332 Applications . Power amp Features . Wide ASO adoption of MBIT process) . Low saturation voltage
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OCR Scan
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2SB1273
QDQ4127
0dgb752
la 1201 sanyo
IS-313D
2SB1273
b1251
n1cj
EIAJ CP 301
30H150
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBT3904W NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 150 mWatts SOT-323 Unit：inch mm 0.004(0.10)MIN. • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V 0.087(2.20) 0.070(1.80) • Collector current I C = 200mA
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Original
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MMBT3904W
OT-323
200mA
OT-323,
MIL-STD-750,
2010-REV
RB500V-40
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PDF
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Untitled
Abstract: No abstract text available
Text: MMDT3904 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V • Collector current I C = 200mA • In compliance with EU RoHS 2002/95/EC directives
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Original
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MMDT3904
200mA
2002/95/EC
OT-363,
MIL-STD-750,
2011-REV
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PDF
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MMBT2369A
Abstract: Transistor General Purpose Transistor FE SOT
Text: MMBT2369A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 15 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 15V • Collector current I C = 200mA • In compliance with EU RoHS 2002/95/EC directives
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Original
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MMBT2369A
200mA
2002/95/EC
OT-23,
MIL-STD-750,
MMBT2369A
Transistor General Purpose Transistor
FE SOT
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PDF
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MMDT4401
Abstract: No abstract text available
Text: MMDT4401 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 200 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V • Collector current I C = 600mA • In compliance with EU RoHS 2002/95/EC directives
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Original
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MMDT4401
600mA
2002/95/EC
OT-363,
MIL-STD-750,
MMDT4401
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PDF
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TRANSISTOR SMD MARKING CODE p1
Abstract: TRANSISTOR SMD CODE PACKAGE SOT323 TRANSISTOR SMD MARKING CODE d2 TRANSISTOR SMD MARKING CODE ce TRANSISTOR SMD MARKING CODE oc smd transistor marking code P MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE 1l SMD TRANSISTOR MARKING 1B SMD TRANSISTOR MARKING 28
Text: COMCHIP Small Signal Transistor SMD Diodes Specialist BC846AW-G Thru. BC848CW-G NPN RoHS Device Features -Power dissipation O PCM: 0.15W (@TA=25 C) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846W=80V BC847W=50V BC848W=30V -Operating and storage junction temperature
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Original
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BC846AW-G
BC848CW-G
BC846W
BC847W
BC848W
OT-323
OT-323,
MIL-STD-750,
QW-BTR35
BC846AW-G
TRANSISTOR SMD MARKING CODE p1
TRANSISTOR SMD CODE PACKAGE SOT323
TRANSISTOR SMD MARKING CODE d2
TRANSISTOR SMD MARKING CODE ce
TRANSISTOR SMD MARKING CODE oc
smd transistor marking code P
MARKING CODE SMD IC
TRANSISTOR SMD MARKING CODE 1l
SMD TRANSISTOR MARKING 1B
SMD TRANSISTOR MARKING 28
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