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    TRANSISTOR BUZ80 Search Results

    TRANSISTOR BUZ80 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BUZ80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BUZ80 BUZ80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80 BUZ80FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 800 V 800 V < 4Ω < 4Ω 3.4 A 2.1 A TYPICAL RDS(on) = 3.3 Ω AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF BUZ80 BUZ80FI 100oC O-220 ISOWATT220 BUZ80e

    BUZ80AFI

    Abstract: BUZ80A BUZ80AF
    Text: BUZ80A BUZ80AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on ID BUZ80A BUZ80AFI 800 V 800 V < 3Ω < 3Ω 3.8 A 2.4 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 2.5 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF BUZ80A BUZ80AFI 100oC O-220 ISOWATT220 BUZ80AFI BUZ80A BUZ80AF

    BUZ80A

    Abstract: No abstract text available
    Text: BUZ80A BUZ80AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on ID BUZ80A BUZ80AFI 800 V 800 V < 3Ω < 3Ω 3.8 A 2.4 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 2.5 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF BUZ80A BUZ80AFI 100oC O-220 ISOWATT220 BUZ80A

    BUZ80

    Abstract: BUZ80FI transistor BUZ80
    Text: BUZ80 BUZ80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80 BUZ80FI • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 800 V 800 V <4Ω <4Ω 3.4 A 2.1 A TYPICAL RDS(on) = 3.3 Ω AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF BUZ80 BUZ80FI 100oC O-220 ISOWATT220 BUZ80 BUZ80FI transistor BUZ80

    BUZ80

    Abstract: BUZ80 equivalent BUZ80FI equivalent BUZ80FI schematic diagram dc-ac welding inverter CIRCUIT schematic diagram welding inverter transistor BUZ80
    Text: BUZ80 BUZ80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80 BUZ80FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 800 V 800 V < 4Ω < 4Ω 3.4 A 2.1 A TYPICAL RDS(on) = 3.3 Ω AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF BUZ80 BUZ80FI 100oC O-220 ISOWATT220 BUZ80 BUZ80 equivalent BUZ80FI equivalent BUZ80FI schematic diagram dc-ac welding inverter CIRCUIT schematic diagram welding inverter transistor BUZ80

    BUZ80

    Abstract: BUZ80FI
    Text: BUZ80 BUZ80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80 BUZ80FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 800 V 800 V < 4Ω < 4Ω 3.4 A 2.1 A TYPICAL RDS(on) = 3.3 Ω AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF BUZ80 BUZ80FI 100oC O-220 ISOWATT220 BUZ80 BUZ80FI

    BUZ80A

    Abstract: BUZ80a equivalent DD 127 D TRANSISTOR
    Text: BUZ80A  N - CHANNEL 800V - 2.5Ω - 3.8A - TO-220 FAST POWER MOS TRANSISTOR TYPE BUZ80A • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 800 V <3Ω 3.8 A TYPICAL RDS(on) = 2.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF BUZ80A O-220 100oC BUZ80A BUZ80a equivalent DD 127 D TRANSISTOR

    BUZ80A

    Abstract: No abstract text available
    Text: BUZ80A  N - CHANNEL 800V - 2.5Ω - 3.8A - TO-220 FAST POWER MOS TRANSISTOR TYPE BUZ80A • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 800 V <3Ω 3.8 A TYPICAL RDS(on) = 2.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF BUZ80A O-220 100oC BUZ80A

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    TDA 16822

    Abstract: 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3
    Text: ICs: SMPS, CoolSET TM TM – D i s c r e t e s : C o o l M O S , I G B T, t h i n Q ! Pow e r Ma n a g e m e n t & Su p p l y : : AC / D C Se l e c t i o n Gu i d e www.infineon.com/power Never stop thinking. TM Introduction TODAY’S MODERN LIFE style leads to a fast growing energy requirement as


    Original     		PDF B152-H8202-X-X-7600 TDA 16822 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3

    Philips KS 40 Temperature Control

    Abstract: BUZ80 transistor Ip BUZ80 transistor BUZ80 T-39-U T0220AB transistor 2TH
    Text: PowerMOS transistor N AMER PH IL IP S / D I SC RE T E BUZ80 GbE D m bfaSB'm 0014S4E . 7 • T-2Î-W May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ80 0014S4E T0220AB; Philips KS 40 Temperature Control BUZ80 transistor Ip BUZ80 transistor BUZ80 T-39-U T0220AB transistor 2TH

    Untitled

    Abstract: No abstract text available
    Text: BU _ Z80A PowerM OS transistor N AUER PHILIPS/DISCRETE OLE D • bbSBTBl □ 014S4CI T ■ T -S 9 -H May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 014S4C BUZ80A_ BUZ80A T-39-11

    Untitled

    Abstract: No abstract text available
    Text: PowerMOS transistor_ BUZ80 N AMER PHILIPS/DISCRETE ObE D • bbSBTai 001454E 7 ■ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ80 001454E BUZ80_ bbS3T31 T-39-11

    Untitled

    Abstract: No abstract text available
    Text: BUZ80A N - CHANNEL 800V - 2.5CI - 3.8A - TO-220 FAST POWER MOS TRANSISTOR TYPE BUZ80A • . . . . . . V dss RdS oii Id 800 V < 3 Q. 3.8 A TYPICAL RDS(on) = 2.5 £1 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF BUZ80A O-220

    BUZ80A

    Abstract: No abstract text available
    Text: SIEMENS BUZ80A SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 80A Vds 800 V b 3A ^DSion Package Ordering Code 3Q TO-220 AB C67078-A1309-A3 Maximum Ratings Parameter Symbol Drain source voltage Vds v DGR Drain-gate voltage Rgs = 20 ki2


    OCR Scan     		PDF BUZ80A O-220 C67078-A1309-A3 BUZ80A

    BUZ80AF

    Abstract: BUZ80A BUZ80AFI
    Text: BUZ80A BUZ80AFI SGS-THOMSON Z T ê N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V d ss FtDS on Id BUZ80A 800 V 3 Ü 3.8 A BUZ80AFI 800 V 3 Li 2.4 A . . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF BUZ80A BUZ80AFI BUZ80AFI O-220 ISOWATT220 BUZ80A/BUZ80AFI SCQ5970 BUZ80AF

    transistor BUZ80

    Abstract: smps co
    Text: SGS-THOMSON BUZ80 BUZ80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80 BUZ80FI . . . . . . . . . V dss R D S on Id 800 V 800 V 4 U 4Q 3.4 A 2.1 A AVALANC HE R UG G EDNESS TECHNO LO G Y 100% AVALANCHE TESTED REPETITIVE AVALANC HE DATA AT 100°C


    OCR Scan     		PDF BUZ80 BUZ80FI BUZ80/FI transistor BUZ80 smps co

    BUZ80AFI

    Abstract: BUZ80AF BUZ80A k2800 Y125 dg45b
    Text: 7 ^ 2 ^ 5 3 7 O O M SbBT G 7b • S 6TH BUZ80A BUZ80AFI SGS-THOMSON :^OT q MS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80A BUZ80AFI ■ . . ■ . ■ . V dss R dS(OII) Id 800 V 800 V < 3 Q < 3 Ü 3.8 A 2.4 A TYPICAL Ros(on) = 2.5 Q AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF BUZ80A BUZ80AFI BUZ80A BUZ80AFI 800Vds 7T5ci237 045b45 BUZ80A/BUZ80AFI BUZ80AF k2800 Y125 dg45b

    wm9 transistor

    Abstract: GC2145
    Text: ¿57 S G S -T H O M S O N ¡m e ra « B U Z80 buzsofi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E BUZ80 BUZ80FI V dss RDS on Id 800 V 800 V < 4 a < 4 0. 3.4 A 2 .1 A • TYPICAL RDS(on) = 3.3 Q. . ■ . . . . AVALANCHE RUGGEDNESS TECHNOLOGY


    OCR Scan     		PDF BUZ80 BUZ80FI BUZ80/FI ISQWATT220 wm9 transistor GC2145

    ot 306

    Abstract: No abstract text available
    Text: * 5 SGS-THOMSON !LiOT iQ £I 7 buzso BUZ80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80 BUZ80FI V dss R DS(on Id 800 V 800 V < 4 a <4 a 3.4 A 2.1 A . T Y P IC A L R Ds (on) = 3.3 Q m A V A LA N C H E R U G G E D N E S S TE C H N O LO G Y


    OCR Scan     		PDF BUZ80FI BUZ80 ot 306

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 80A SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 80A Vds 800 V b RDS on Package Ordering Code 3A 3£2 TO-220 AB C67078-A1309-A3 Maximum Ratings Parameter Symbol Drain source voltage Vbs Drain-gate voltage ^DGR Rq s Values


    OCR Scan     		PDF O-220 C67078-A1309-A3 B23SL BUZ80A 235bGS

    V103 TRANSISTOR

    Abstract: BUZ80A T0220AB V103 buz80
    Text: PowerM OS transistor_ BU Z80A _ N AMER PHI LI PS /D I SC RE T E DtE D • ^53131 GOmSMT ~ T ■ T - - S 9 - I I May 1987 G EN ER A L DESCRIPTION N-channel enchancem ent m ode field-effect pow er transistor in a plastic envelope. T he device is intended for use in


    OCR Scan     		PDF BUZ80A_ T0220AB; BUZ80A 00mSS5 T-39-11 V103 TRANSISTOR BUZ80A T0220AB V103 buz80

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350