TRANSISTOR BUZ80 Search Results

TRANSISTOR BUZ80 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR BUZ80 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Philips KS 40 Temperature Control Abstract: BUZ80 transistor Ip BUZ80 transistor BUZ80 T-39-U T0220AB transistor 2TH Text: PowerMOS transistor N AMER PH IL IP S / D I SC RE T E BUZ80 GbE D m bfaSB'm 0014S4E . 7 • T-2Î-W May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ80 0014S4E T0220AB; Philips KS 40 Temperature Control BUZ80 transistor Ip BUZ80 transistor BUZ80 T-39-U T0220AB transistor 2TH	PDF
Untitled Abstract: No abstract text available Text: BU _ Z80A PowerM OS transistor N AUER PHILIPS/DISCRETE OLE D • bbSBTBl □ 014S4CI T ■ T -S 9 -H May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	014S4C BUZ80A_ BUZ80A T-39-11	PDF
Untitled Abstract: No abstract text available Text: PowerMOS transistor_ BUZ80 N AMER PHILIPS/DISCRETE ObE D • bbSBTai 001454E 7 ■ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ80 001454E BUZ80_ bbS3T31 T-39-11	PDF
UZ80A Abstract: No abstract text available Text: SGS-THOMSON £j ï ULKgraMOeS BUZ80A BUZ80AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E BUZ80A BUZ80AFI • . . . . . . V dss RDS on Id 800 V 800 V <3 0 < 3 0. 3.8 A 2.4 A TYPICAL RDS(on) = 2.5 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED	OCR Scan	BUZ80A BUZ80AFI UZ80A UZ80AFI UZ80A	PDF
Untitled Abstract: No abstract text available Text: BUZ80A N - CHANNEL 800V - 2.5CI - 3.8A - TO-220 FAST POWER MOS TRANSISTOR TYPE BUZ80A • . . . . . . V dss RdS oii Id 800 V < 3 Q. 3.8 A TYPICAL RDS(on) = 2.5 £1 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C	OCR Scan	BUZ80A O-220	PDF
BUZ80A Abstract: No abstract text available Text: SIEMENS BUZ80A SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 80A Vds 800 V b 3A ^DSion Package Ordering Code 3Q TO-220 AB C67078-A1309-A3 Maximum Ratings Parameter Symbol Drain source voltage Vds v DGR Drain-gate voltage Rgs = 20 ki2	OCR Scan	BUZ80A O-220 C67078-A1309-A3 BUZ80A	PDF
BUZ80AF Abstract: BUZ80A BUZ80AFI Text: BUZ80A BUZ80AFI SGS-THOMSON Z T ê N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V d ss FtDS on Id BUZ80A 800 V 3 Ü 3.8 A BUZ80AFI 800 V 3 Li 2.4 A . . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C	OCR Scan	BUZ80A BUZ80AFI BUZ80AFI O-220 ISOWATT220 BUZ80A/BUZ80AFI SCQ5970 BUZ80AF	PDF
Untitled Abstract: No abstract text available Text: BUZ80 BUZ80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80 BUZ80FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 800 V 800 V < 4Ω < 4Ω 3.4 A 2.1 A TYPICAL RDS(on) = 3.3 Ω AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC	Original	BUZ80 BUZ80FI 100oC O-220 ISOWATT220 BUZ80e	PDF
BUZ80AFI Abstract: BUZ80A BUZ80AF Text: BUZ80A BUZ80AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on ID BUZ80A BUZ80AFI 800 V 800 V < 3Ω < 3Ω 3.8 A 2.4 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 2.5 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC	Original	BUZ80A BUZ80AFI 100oC O-220 ISOWATT220 BUZ80AFI BUZ80A BUZ80AF	PDF
BUZ80A Abstract: No abstract text available Text: BUZ80A BUZ80AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on ID BUZ80A BUZ80AFI 800 V 800 V < 3Ω < 3Ω 3.8 A 2.4 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 2.5 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC	Original	BUZ80A BUZ80AFI 100oC O-220 ISOWATT220 BUZ80A	PDF
BUZ80 Abstract: BUZ80FI transistor BUZ80 Text: BUZ80 BUZ80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80 BUZ80FI • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 800 V 800 V <4Ω <4Ω 3.4 A 2.1 A TYPICAL RDS(on) = 3.3 Ω AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC	Original	BUZ80 BUZ80FI 100oC O-220 ISOWATT220 BUZ80 BUZ80FI transistor BUZ80	PDF
transistor BUZ80 Abstract: smps co Text: SGS-THOMSON BUZ80 BUZ80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80 BUZ80FI . . . . . . . . . V dss R D S on Id 800 V 800 V 4 U 4Q 3.4 A 2.1 A AVALANC HE R UG G EDNESS TECHNO LO G Y 100% AVALANCHE TESTED REPETITIVE AVALANC HE DATA AT 100°C	OCR Scan	BUZ80 BUZ80FI BUZ80/FI transistor BUZ80 smps co	PDF
BUZ80 Abstract: BUZ80 equivalent BUZ80FI equivalent BUZ80FI schematic diagram dc-ac welding inverter CIRCUIT schematic diagram welding inverter transistor BUZ80 Text: BUZ80 BUZ80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80 BUZ80FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 800 V 800 V < 4Ω < 4Ω 3.4 A 2.1 A TYPICAL RDS(on) = 3.3 Ω AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC	Original	BUZ80 BUZ80FI 100oC O-220 ISOWATT220 BUZ80 BUZ80 equivalent BUZ80FI equivalent BUZ80FI schematic diagram dc-ac welding inverter CIRCUIT schematic diagram welding inverter transistor BUZ80	PDF
BUZ80 Abstract: BUZ80FI Text: BUZ80 BUZ80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80 BUZ80FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 800 V 800 V < 4Ω < 4Ω 3.4 A 2.1 A TYPICAL RDS(on) = 3.3 Ω AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC	Original	BUZ80 BUZ80FI 100oC O-220 ISOWATT220 BUZ80 BUZ80FI	PDF

BUZ80A Abstract: No abstract text available Text: BUZ80A  N - CHANNEL 800V - 2.5Ω - 3.8A - TO-220 FAST POWER MOS TRANSISTOR TYPE BUZ80A • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 800 V <3Ω 3.8 A TYPICAL RDS(on) = 2.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC	Original	BUZ80A O-220 100oC BUZ80A	PDF
BUZ80AFI Abstract: BUZ80AF BUZ80A k2800 Y125 dg45b Text: 7 ^ 2 ^ 5 3 7 O O M SbBT G 7b • S 6TH BUZ80A BUZ80AFI SGS-THOMSON :^OT q MS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80A BUZ80AFI ■ . . ■ . ■ . V dss R dS(OII) Id 800 V 800 V < 3 Q < 3 Ü 3.8 A 2.4 A TYPICAL Ros(on) = 2.5 Q AVALANCHE RUGGED TECHNOLOGY	OCR Scan	BUZ80A BUZ80AFI BUZ80A BUZ80AFI 800Vds 7T5ci237 045b45 BUZ80A/BUZ80AFI BUZ80AF k2800 Y125 dg45b	PDF
wm9 transistor Abstract: GC2145 Text: ¿57 S G S -T H O M S O N ¡m e ra « B U Z80 buzsofi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E BUZ80 BUZ80FI V dss RDS on Id 800 V 800 V < 4 a < 4 0. 3.4 A 2 .1 A • TYPICAL RDS(on) = 3.3 Q. . ■ . . . . AVALANCHE RUGGEDNESS TECHNOLOGY	OCR Scan	BUZ80 BUZ80FI BUZ80/FI ISQWATT220 wm9 transistor GC2145	PDF
ot 306 Abstract: No abstract text available Text: * 5 SGS-THOMSON !LiOT iQ £I 7 buzso BUZ80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80 BUZ80FI V dss R DS(on Id 800 V 800 V < 4 a <4 a 3.4 A 2.1 A . T Y P IC A L R Ds (on) = 3.3 Q m A V A LA N C H E R U G G E D N E S S TE C H N O LO G Y	OCR Scan	BUZ80FI BUZ80 ot 306	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BUZ 80A SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 80A Vds 800 V b RDS on Package Ordering Code 3A 3£2 TO-220 AB C67078-A1309-A3 Maximum Ratings Parameter Symbol Drain source voltage Vbs Drain-gate voltage ^DGR Rq s Values	OCR Scan	O-220 C67078-A1309-A3 B23SL BUZ80A 235bGS	PDF
c5088 transistor Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154	Original	1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N	PDF
V103 TRANSISTOR Abstract: BUZ80A T0220AB V103 buz80 Text: PowerM OS transistor_ BU Z80A _ N AMER PHI LI PS /D I SC RE T E DtE D • ^53131 GOmSMT ~ T ■ T - - S 9 - I I May 1987 G EN ER A L DESCRIPTION N-channel enchancem ent m ode field-effect pow er transistor in a plastic envelope. T he device is intended for use in	OCR Scan	BUZ80A_ T0220AB; BUZ80A 00mSS5 T-39-11 V103 TRANSISTOR BUZ80A T0220AB V103 buz80	PDF
Q2N4401 Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751 Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog	Original	RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751	PDF
TDA 16822 Abstract: 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3 Text: ICs: SMPS, CoolSET TM TM – D i s c r e t e s : C o o l M O S , I G B T, t h i n Q ! Pow e r Ma n a g e m e n t & Su p p l y : : AC / D C Se l e c t i o n Gu i d e www.infineon.com/power Never stop thinking. TM Introduction TODAY’S MODERN LIFE style leads to a fast growing energy requirement as	Original	B152-H8202-X-X-7600 TDA 16822 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3	PDF
transistor f6 13003 Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.	OCR Scan	SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350	PDF

TRANSISTOR BUZ80 Search Results

TRANSISTOR BUZ80 Result Highlights (5)

TRANSISTOR BUZ80 Datasheets Context Search

Philips KS 40 Temperature Control

Untitled

Untitled

UZ80A

Untitled

BUZ80A

BUZ80AF

Untitled

BUZ80AFI

BUZ80A

BUZ80

transistor BUZ80

BUZ80

BUZ80

BUZ80A

BUZ80AFI

wm9 transistor

ot 306

Untitled

c5088 transistor

V103 TRANSISTOR

Q2N4401

TDA 16822

transistor f6 13003