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    TRANSISTOR BUZ10 Search Results

    TRANSISTOR BUZ10 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BUZ10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BUZ10

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE OLE D • PowerMOS transistor bb53T31 0014331 1 ■ BUZ10 r~ 1 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		bb53T31 BUZ10 D0143flb T-39-11 7Z21184 BUZ10_ BUZ10 PDF

    transistor BUZ10

    Abstract: K 3911 BUZ10 transistor k 3911 D143 T0220AB
    Text: N AMER PHILIPS/DISCRETE PowerMOS transistor □LE D • bbS3T31 0014301 B U Z 10 ■ “T — 3 7 — 11 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		BUZ10 T0220AB; mountin40 Liki53 00143flb T-39-11 BUZ10 btS3ti31 7Z211S7 transistor BUZ10 K 3911 transistor k 3911 D143 T0220AB PDF

    smd transistor 43t

    Abstract: marking code ya SMD Transistor MARKING SMD 43t SMD MARKING CODE 43t smd 43t transistor BUZ102S smd code book transistor 43t SMD E3045 G1333
    Text: Infineon , m proved technologies BUZ102S ' SIPMOS Power Transistor Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance ñ D S o n • Avalanche rated Continuous drain current b CO Features 55 V 0.018


    OCR Scan     		BUZ102S P-T0220-3-1 Q67040-S4011-A2 E3045A P-T0263-3-2 Q67040-S4011-A6 E3045 smd transistor 43t marking code ya SMD Transistor MARKING SMD 43t SMD MARKING CODE 43t smd 43t transistor smd code book transistor 43t SMD G1333 PDF

    smd transistor marking 7j

    Abstract: TRANSISTOR SMD MARKING CODE c015 TRANSISTOR SMD MARKING CODE BS s BUZ103S E3045 Q67040-S4009-A2 diode marking code MU marking 684 diode smD
    Text: Infineon BUZ103S ,y e d Rosi0"' ’ technologie» im p f SIPMOS® Power Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance ñ D S o n • Avalanche rated Continuous drain current


    OCR Scan     		BUZ103S BUZ103S P-T0220-3-1 Q67040-S4009-A2 E3045A P-T0263-3-2 Q67040-S4009-A6 E3045 smd transistor marking 7j TRANSISTOR SMD MARKING CODE c015 TRANSISTOR SMD MARKING CODE BS s diode marking code MU marking 684 diode smD PDF

    BUZ100

    Abstract: BSS10
    Text: SIEMENS BUZ100L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dw'df rated • Ultra low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type Vbs BUZ100L 50V b 60 A Boston


    OCR Scan     		O-220 BUZ100L C67078-S1354-A2 T05155 BUZ100 BSS10 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 101 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/df rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vds BUZ101 50 V 29 A flbSfon Package Ordering Code


    OCR Scan     		O-220 BUZ101 C67078-S1350-A2 A235bOS PDF

    702 TRANSISTOR smd

    Abstract: smd 58a transistor 6-pin transistor 702 F smd TRANSISTOR SMD 702 N 702 L TRANSISTOR smd 702 Z TRANSISTOR smd 702 N smd transistor transistor 702 smd SMD transistor code 702 702 transistor smd code
    Text: SIEMENS BUZ 101L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv^di rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ101L Vbs 50V *> 29 A RaS on


    OCR Scan     		O-220 BUZ101L C67078-S1355-A2 702 TRANSISTOR smd smd 58a transistor 6-pin transistor 702 F smd TRANSISTOR SMD 702 N 702 L TRANSISTOR smd 702 Z TRANSISTOR smd 702 N smd transistor transistor 702 smd SMD transistor code 702 702 transistor smd code PDF

    BUZ102

    Abstract: smd transistor py
    Text: SIEMENS BUZ 102 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dvfdt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vbs BUZ102 50 V b 42 A flbston Package Ordering Code


    OCR Scan     		O-220 BUZ102 C67078-S1351-A2 BUZ102 smd transistor py PDF

    transistor SMD t70

    Abstract: BUZ104
    Text: SIEMENS BUZ 104 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/df rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ104 Vfcs Io flbSfon Package Ordering Code 50 V


    OCR Scan     		O-220 BUZ104 C67078-S1353-A2 a23Sbà GPT05155 fl235b05 00fi4Sc transistor SMD t70 BUZ104 PDF

    SmD TRANSISTOR 42T

    Abstract: smd 42t
    Text: SIEMENS BUZ 100 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/df rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vbs >D ffDS on Package Ordering Code BUZ100


    OCR Scan     		O-220 BUZ100 C67078-S1348-A2 6235bDS SmD TRANSISTOR 42T smd 42t PDF

    7C SMD TRANSISTOR

    Abstract: No abstract text available
    Text: SIEMENS BUZ 101 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dWdt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ101 Vbs 50 V b ^>S on Package Ordering Code 29 A


    OCR Scan     		O-220 BUZ101 C67078-S1350-A2 7C SMD TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 104L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ104L Vos 50 V b 17.5 A flDS on


    OCR Scan     		O-220 BUZ104L 78-S1358-A2 0235bG5 0064bD4 G0fl4b05 0235bOS PDF

    smd transistor 43t

    Abstract: buz1025 MARKING SMD 43t st smd diode marking code BUZ SMD DIODE BOOK smd marking wds P-T0263-3-2 infineon 3330 BUZ 1025 E304
    Text: Infineon , m proved te c h n o lo g ie s BUZ102S ' SIPMOS Power Transistor Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current CO Features 55 V ñ DS on 0.018 Í 2


    OCR Scan     		BUZ102S BUZ102S P-T0220-3-1 Q67040-S4011-A2 E3045A P-T0263-3-2 Q67040-S4011-A6 E3045 smd transistor 43t buz1025 MARKING SMD 43t st smd diode marking code BUZ SMD DIODE BOOK smd marking wds infineon 3330 BUZ 1025 E304 PDF

    LD 757 ps

    Abstract: smd code cfa
    Text: SIEMENS BUZ104L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dw/df rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ104L l'os 50 V fa 17.5 A ffesíon


    OCR Scan     		O-220 BUZ104L C67078-S1358-A2 PT05155 LD 757 ps smd code cfa PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ10S2 Not for new design SIPMOS @Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ10S2 ^bs 60 V to HDS on Package Ordering Code 23 A 0.07 Í 2 TO-220 AB C67078-S1300-A7 Maximum Ratings Parameter Symbol Values Continuous drain current


    OCR Scan     		BUZ10S2 O-220 C67078-S1300-A7 A235bG5 A235b05 PDF

    m574

    Abstract: No abstract text available
    Text: BUZ 103 SIEMENS SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • du/df rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vbs BUZ103 50 V Id 40 A ^DS on Package Ordering Code


    OCR Scan     		O-220 BUZ103 C67078-S1352-A2 8235bOS GPT35155 235bD5 m574 PDF

    BUZ100

    Abstract: No abstract text available
    Text: SIEMENS BUZ 100L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Ultra low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type Vbs BUZ100L 50 V 4j 60 A


    OCR Scan     		O-220 BUZ100L C67078-S1354-A2 BUZ100 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ103AL SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • d tfd f rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ103AL Vbs 50 V to 35 A ^bs<on


    OCR Scan     		O-220 BUZ103AL C67078-S1357-A2 103AL PDF

    buz10

    Abstract: No abstract text available
    Text: / = 7 SGS-THOMSON ^TÆ, M œ m itgTM O igi BUZ10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ADVANCE DATA TYPE V DSS R DS on BUZ10 50 V 0.08 Q 20 A • HIGH SPEED SWITHING • LOW Rds (0N) • EASY DRIVE FOR COST EFFECTIVE APPLICATIONS. INDUSTRIAL APPLICATIONS:


    OCR Scan     		BUZ10 10OA/juS buz10 PDF

    Untitled

    Abstract: No abstract text available
    Text: Æ 7 SGS-THOMSON BUZ10A M g[M5iO=EgT[!mD(g§ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^ D S (o n BUZ10A 50 V 0.12 Ö 17 A • HIGH SPEED SWITCHING • LOW Rds (0N) • EASY DRIVE FOR COST EFFECTIVE APPLICATIONS. INDUSTRIAL APPLICATIONS:


    OCR Scan     		BUZ10A 00A//1S PDF

    GD 743 Siemens

    Abstract: No abstract text available
    Text: SIEMENS BUZ 103 AL SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Low on-resistance • 175 °C operating temperature • also In TQ-220 SMD available Type BUZ103AL ^bs 50 V b 35 A ^DS on


    OCR Scan     		TQ-220 BUZ103AL C67078-S1357-A2 A23SbOS Z103AL O-220 T05155 235b05 D0fl45flfl GD 743 Siemens PDF

    BUZ100

    Abstract: to 220 smd BUZ100 SIEMENS
    Text: SIEMENS BUZ 100 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • d tfd f rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ100 Vbs 50 V b 60 A f%>S on 0.018 Q Package


    OCR Scan     		O-220 BUZ100 C67078-S1348-A2 BUZ100 to 220 smd BUZ100 SIEMENS PDF

    schematic diagram reverse forward motor

    Abstract: No abstract text available
    Text: i^ 7 SCS-THOMSON BUZ 10 ^ 7 #, HD @ilLI OT©iD©Ì N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ADVANCE DATA TYPE V DSS RDS(on BUZ10 50 V 0.08 Q Id 20 A • HIGH SPEED SWITHING • LOW R ds (0N) • EASY DRIVE FOR COST EFFECTIVE APPLICATIONS. INDUSTRIAL APPLICATIONS'.


    OCR Scan     		BUZ10 schematic diagram reverse forward motor PDF

    buz102

    Abstract: No abstract text available
    Text: SIEMENS BUZ 102 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/d/ rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 Pin 2 Type Vbs BUZ102 50 V b 42 A Pin 3 D G S ^DS on


    OCR Scan     		O-220 BUZ102 C67078-S1351-A2 fl23Sb05 023Sfc 35bQ5 00fl45b buz102 PDF