TRANSISTOR BUT 12 Search Results

TRANSISTOR BUT 12 Result Highlights (5)

Part	Manufacturer	Description
MD8039AHL/R	Rochester Electronics LLC	8039AHL - 8-But Microcontroller
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
2SA1213	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini

TRANSISTOR BUT 12 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Preliminary SGA-8543Z Product Description Sirenza Microdevices’ SGA-8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50 MHz to 3.5 GHz. The SGA-8543Z is optimized for 3.3V operation but can	Original	SGA-8543Z SGA-8543Z EDS-102583	PDF
J119 transistor Abstract: bipolar transistor ghz s-parameter 140C SGA-8543Z SiGe POWER TRANSISTOR Text: Preliminary SGA-8543Z Product Description Sirenza Microdevices’ SGA-8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to 3.5 GHz. The SGA-8543Z is optimized for 3.3V operation but can be	Original	SGA-8543Z SGA-8543Z EDS-102583 J119 transistor bipolar transistor ghz s-parameter 140C SiGe POWER TRANSISTOR	PDF
Untitled Abstract: No abstract text available Text: BUX85 NPN SILICON POWER TRANSISTOR ● 40 W at 25°C Case Temperature ● 2 A Continuous Collector Current ● 3 A Peak Collector Current ● Typical tf = 200 ns at 25°C This series is currently available, but not recommended for new designs. TO-220 PACKAGE	Original	BUX85 O-220 TCP741AL	PDF
a83z Abstract: A83Z data SGA8343Z transistor A83 2.4 ghz passive rfid AN-044 bipolar transistor ghz s-parameter SGA-8343 SGA-8343Z SGA 8343Z Text: SGA-8343 SGA-8343Z Product Description Sirenza Microdevices’ SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to 6 GHz. The SGA-8343 is optimized for 3V operation but can be biased at 2V for low-voltage	Original	SGA-8343 SGA-8343Z SGA-8343 EDS-101845 a83z A83Z data SGA8343Z transistor A83 2.4 ghz passive rfid AN-044 bipolar transistor ghz s-parameter SGA-8343Z SGA 8343Z	PDF
2SC3355 SPICE MODEL Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101 Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness	Original	F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101	PDF
ac Inverter schematics 10 kw Abstract: INVERTER 50 kW 25 KW inverter ACPL-P454-000E ac Inverter 10 kw ACPL-P454 dc to ac inverter schematic diagram kw POWER SUPPLY transformer 100 kW ACPL-W454 Text: ACPL-W454/P454 High CMR High Speed Optocoupler Data Sheet Lead Pb Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxE denotes a lead-free product Description Features The ACPL-W454/P454 is similar to Avago Technologies other high speed transistor output optocouplers, but with	Original	ACPL-W454/P454 ACPL-W454/P454 ACPLW454/P454 ACPL-W454) AV01-0253EN ac Inverter schematics 10 kw INVERTER 50 kW 25 KW inverter ACPL-P454-000E ac Inverter 10 kw ACPL-P454 dc to ac inverter schematic diagram kw POWER SUPPLY transformer 100 kW ACPL-W454	PDF
SM200 Abstract: Radar HV400 Radar Transponder HVV1011-300 HVV1214-100 Text: The innovative Semiconductor Company! Technology Overview TM A NEW APPROACH TO SILICON RF POWER TRANSISTOR DESIGN Today’s radar and avionics applications demand RF power amplifiers that can deliver higher power density in smaller packages and with greater reliability. But, the silicon technologies currently used in most power transistors	Original		PDF
Untitled Abstract: No abstract text available Text: Preliminary Product Description Sirenza Microdevices’ SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to 6 GHz. The SGA-8343 is optimized for 3V operation but can be biased at 2V for lowvoltage battery operated systems. The device provides high	Original	SGA-8343 SGA-8343 EDS-101845	PDF
KVS5032 Abstract: ic iR light control Text: Visible Light Sensor KVS5032 DIMENSIONS The KVS5032 is the optical sensor with high sensitivity of the visible light. It is a photo transistor with IR filter inside. Unit : mm 1.30 2 2.40 3.00 1.50 3 1 4 3.50 FEATURES TOP SURFACE • High sensitivity in a visible area, but little sensitivity	Original	KVS5032 KVS5032 100lx) 500lx) 1000lx) ic iR light control	PDF
8543 Abstract: 2.4 ghz passive rfid Z1 SOT343 EDS-102583 Text: Advanced Information Product Description Sirenza Microdevices’ SGA-8543 is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to 3.5 GHz. The SGA-8543 is optimized for 3V operation but can be biased at 2V for lowvoltage battery operated systems. The device provides low	Original	SGA-8543 SGA-8543 8543 2.4 ghz passive rfid Z1 SOT343 EDS-102583	PDF
rohm surface mounted transistor series Abstract: Z1 SOT343 GAS105 Text: AdvancedPreliminary Information Product Description Sirenza Microdevices’ SGA-8143 is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to 6 GHz. The SGA-8143 is optimized for 3V operation but can be biased at 2V for lowvoltage battery operated systems. The device provides high	Original	SGA-8143 SGA-8143 EDS-102580 rohm surface mounted transistor series Z1 SOT343 GAS105	PDF
Untitled Abstract: No abstract text available Text: BUX84 NPN SILICON POWER TRANSISTOR 40 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 2 A Continuous Collector Current 3 A Peak Collector Current B 1 Typical tf = 200 ns at 25°C C 2 E 3 This series is currently available, but not recommended for new designs.	Original	BUX84 O-220 TCP741AL	PDF
Untitled Abstract: No abstract text available Text: BUT11 NPN SILICON POWER TRANSISTOR Rugged Triple-Diffused Planar Construction 100 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 5 A Continuous Collector Current This series is currently available, but not recommended for new designs. B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base.	Original	BUT11 O-220 SAP791AB	PDF
Untitled Abstract: No abstract text available Text: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS TO -220 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector-Base Voltage : BUT 12 : BUT12A Collector Emitter Voltage : BUT12 : BUT 1 2A Collector Current (DC) Collector Current (Pulse)	OCR Scan	BUT12/12A BUT12A BUT12 100mA,	PDF

Untitled Abstract: No abstract text available Text: How To Handle Transistors Although SANYO makes ail possible efforts to assure quality and reliability in its development and production of transistor products, transistor reliability depends not only on the inherent factors in the transistors but also on the conditions under which the transistors are used. These	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification NPN 9 GHz wideband transistor crystal DESCRIPTION X3A-BFR520 MECHANICAL DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied as whole wafer, fully tested but unsawn.	OCR Scan	X3A-BFR520 BFR520 BFG520 OT143) BFP520 OT173) Fau134)	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification PNP 5 GHz wideband transistor crystal DESCRIPTION X3A-BFT93 MECHANICAL DATA PNP crystal used in BFQ23 SOT37 , BFQ24 (TO-72) and BFT93 (SOT23). Crystals are supplied as whole wafer, fully tested but unsawn. Top metallization	OCR Scan	X3A-BFT93 BFQ23 BFQ24 BFT93	PDF
TRANSISTOR BC 157 Abstract: TRANSISTOR BC 158 BY22B transistor BC 245 c B13 IC marking code Transistor SJ 2517 sj 2518 TRANSISTOR as BC 158 SJ 2517 BFX34 Text: TELEFUNKEN ELECTRONIC 17E D • f l^ O t n b □QO'353‘3 4 . BUT 93 W IUMFfaimm electronic Creàtiy*T«chnoiosa r - 2 3 - i! Silicon NPN Power Transistor Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique	OCR Scan	T0126 15A3DIN TRANSISTOR BC 157 TRANSISTOR BC 158 BY22B transistor BC 245 c B13 IC marking code Transistor SJ 2517 sj 2518 TRANSISTOR as BC 158 SJ 2517 BFX34	PDF
Untitled Abstract: No abstract text available Text: 7 ^ 2. 3 ' / 5 " “ SEMELAB 37E LTD D • Û1331Û7 000017b SEMELAB JU L 0 6 1988 BUT 70 NPN MULTI-EPITAXIAL POWER TRANSISTOR MECHANICAL DATA Suitable for high efficiency switching applications Dimensions in mm FEATURES • VERY LOW VC6 SAT1 • HIGH CURRENT	OCR Scan	000017b 0-13mH	PDF
transistor BC 245 Abstract: transistor BC 245 c ST25C transistor bc 138 FC4A TRANSISTOR BC 137 but54 TELEFUNKEN 12A3 T0126 Text: TELEFUNKEN ELECTRONIC 17E D • 6 ti S 0 0 cib OOORSEi BUT 54 T m O JIP W K iiiS electronic Cwbv*ttchnotog« Silicon NPN Power Transistor r - 3 5 - is Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique • Short switching time	OCR Scan	00DRS51 flBES100 T0126 15A3DIN transistor BC 245 transistor BC 245 c ST25C transistor bc 138 FC4A TRANSISTOR BC 137 but54 TELEFUNKEN 12A3 T0126	PDF
BUT93 Abstract: BY22B T3311 C 3311 transistor 14A3 BFX34 BY228 AEG v 300 transistor sc3 T-33-11 Text: A E G CORP 17E D 002=142^ G QCHSBI fi BUT 93 •BHILIIFmiMKiliia electronic Creative Technologies r-2 3 -il Silicon NPN Power Transistor A p p lic a tio n : Switching mode power supply, electronic ballast Features: • In m ulti diffusion technique • Short sw itching tim e	OCR Scan	r-23-il 0G2142b T-33-11 BUT93 BY22B T3311 C 3311 transistor 14A3 BFX34 BY228 AEG v 300 transistor sc3 T-33-11	PDF
AEG T 25 N 1000 Abstract: ps2ms QS 100 NPN Transistor S100 NPN Transistor BYV16 MS 3894 N BUT54 Text: A E G CORP 17E D QQSTMSta OGQTSSl Q BUT 54 electronic r - 33-13 C^atN«Tech«j*os'es Silicon NPN Power Transistor A p p lic a tio n : Sw itching mode power supply, electronic ballast Features: • In multi diffusion technique Short sw itching tim e • Glass passivation	OCR Scan	QG2T42b T-33-13 AEG T 25 N 1000 ps2ms QS 100 NPN Transistor S100 NPN Transistor BYV16 MS 3894 N BUT54	PDF
2N914 Abstract: bi 370 transistor transistor 2N914 bi 370 transistor e transistor eb 2030 Text: 2N914 SILICON PLANAR NPN SATURATED LOGIC SWITCH AN D V H F AM P LIFIE R The 2N 914 is a silicon planar epitaxial NPN transistor in Jedec T O -1 8 metal case. It is p rim a rily a universal switch but it is also an excellent high speed, high gain logic and	OCR Scan	2N914 2N914 G-2030 bi 370 transistor transistor 2N914 bi 370 transistor e transistor eb 2030	PDF
Untitled Abstract: No abstract text available Text: 37E D SEMELAB LTD • Ô1331Ô7 00DD1Ö0 Ô M S t lL B SEMELAB JUL 0 6 1988 ^ BUT 92A NPN FAST SW ITCHING POWER TRANSISTOR M EC H A N IC A L DATA Suitable for high efficiency switching applications Dimensions in mm FEATURES H-1-6 • VERY LOW V,CE SAT • HIGH EFFICIENCY SWITCHING	OCR Scan	00DD1Ã 0-83mH 0-83ii G0001Ã	PDF

TRANSISTOR BUT 12 Search Results

TRANSISTOR BUT 12 Result Highlights (5)

TRANSISTOR BUT 12 Datasheets Context Search

Untitled

J119 transistor

Untitled

a83z

2SC3355 SPICE MODEL

ac Inverter schematics 10 kw

SM200

Untitled

KVS5032

8543

rohm surface mounted transistor series

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TRANSISTOR BC 157

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transistor BC 245

BUT93

AEG T 25 N 1000

2N914

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