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    TRANSISTOR BUK9508 Search Results

    TRANSISTOR BUK9508 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BUK9508 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUK9508-55

    Abstract: BUK9608-55
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology


    Original     		PDF OT404 BUK9608-55 BUK9508-55 BUK9608-55

    BUK9508-55

    Abstract: PHB125N06LT 4100us
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology


    Original     		PDF OT404 PHB125N06LT BUK9508-55 PHB125N06LT 4100us

    buk9508

    Abstract: BUK9508-55 BUK9608-55
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology


    Original     		PDF OT404 BUK9608-55 buk9508 BUK9508-55 BUK9608-55

    45118

    Abstract: TRANSISTOR SMD MARKING CODE RG F/45118
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology


    Original     		PDF BUK9608-55 OT404 drT404 BUK9608-55 /\\Roarer\root\data13\imaging\BITTING\cpl mismatch\20000819\081. \BUK9608-55 45118 TRANSISTOR SMD MARKING CODE RG F/45118

    TRANSISTOR BUK9508

    Abstract: BUK9508-55A BUK9608-55A transistor smd 412 BE
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features


    Original     		PDF O220AB OT404 BUK9508-55A BUK9608-55A O220AB TRANSISTOR BUK9508 BUK9508-55A BUK9608-55A transistor smd 412 BE

    a6585

    Abstract: smd transistor k 1540 BUK9508-55A
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features


    Original     		PDF O220AB OT404 BUK9508-55A BUK9608-55A O220AB a6585 smd transistor k 1540

    BUK9508-55

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has


    Original     		PDF O220AB BUK9508-55 BUK9508-55

    BUK950

    Abstract: BUK9508-55 BUK9508-55A
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has


    Original     		PDF BUK9508-55 O220AB BUK9508-55 /\\Roarer\root\data13\imaging\BITTING\cpl mismatch\20000819\081. \BUK9508-55 BUK950 BUK9508-55A

    BUK9508-55

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has


    Original     		PDF O220AB BUK9508-55 BUK9508-55

    transistor BUK9508

    Abstract: BUK9508-55 BUK950
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has


    Original     		PDF O220AB BUK9508-55 transistor BUK9508 BUK9508-55 BUK950

    transistor BUK9508

    Abstract: BUK9508-55B BUK95
    Text: BUK9508-55B N-channel TrenchMOS logic level FET Rev. 03 — 15 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9508-55B transistor BUK9508 BUK9508-55B BUK95

    Untitled

    Abstract: No abstract text available
    Text: BUK9508-55B N-channel TrenchMOS logic level FET Rev. 03 — 15 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9508-55B

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHP125N06LT, PHB125N06LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance


    Original     		PDF PHP125N06LT, PHB125N06LT PHP125N06LT O220AB)

    DIODE 542 SMD

    Abstract: transistor smd code marking nc g
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHP125N06LT, PHB125N06LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance


    Original     		PDF PHP125N06LT, PHB125N06LT PHP125N06LT O220AB) OT404 PHB125N06LT PHP125N06LT DIODE 542 SMD transistor smd code marking nc g

    PHP125N06LT

    Abstract: BUK9508-55 PHB125N06LT
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHP125N06LT, PHB125N06LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance


    Original     		PDF PHP125N06LT, PHB125N06LT PHP125N06LT BUK9508-55 PHB125N06LT

    SMD fet MARKING 34

    Abstract: transistor smd code marking nc g TRANSISTOR SMD mos fet
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHP125N06LT, PHB125N06LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance


    Original     		PDF PHP125N06LT, PHB125N06LT PHP125N06LT O220AB) conventiPHB125N06LT PHP125N06LT PHB125N06LT SMD fet MARKING 34 transistor smd code marking nc g TRANSISTOR SMD mos fet

    BUK9E08-55b

    Abstract: BUK9508-55B BUK9608-55B
    Text: BUK95/96/9E08-55B TrenchMOS logic level FET Rev. 02 — 13 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.


    Original     		PDF BUK95/96/9E08-55B OT404, OT226 BUK9E08-55b BUK9508-55B BUK9608-55B

    BUK9508-55A

    Abstract: No abstract text available
    Text: BUK95/9608-55A TrenchMOS logic level FET Rev. 03 — 6 May 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability:


    Original     		PDF BUK95/9608-55A BUK9508-55A O-220AB) BUK9608-55A OT404 OT404,

    Untitled

    Abstract: No abstract text available
    Text: D2 PA K BUK9608-55A N-channel TrenchMOS logic level FET Rev. 04 — 31 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9608-55A

    BUK95

    Abstract: BUK9608-55A
    Text: D2 PA K BUK9608-55A N-channel TrenchMOS logic level FET Rev. 04 — 31 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9608-55A BUK95 BUK9608-55A

    transistor D 982

    Abstract: gis 110 kv
    Text: Philips Semiconductors Product specification BUK9508-55 TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very


    OCR Scan     		PDF BUK9508-55 T0220AB transistor D 982 gis 110 kv

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has


    OCR Scan     		PDF BUK9508-55 T0220AB

    S25 zener diode

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenehMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has


    OCR Scan     		PDF BUK9508-55 T0220AB IE-02 1E-05 S25 zener diode

    K950

    Abstract: No abstract text available
    Text: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on B U K9508-55 T r e n c h M O S transistor L o g i c level F E T G E N E R A L DE SCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope using ’t re n ch ’


    OCR Scan     		PDF K9508-55 K950