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    TRANSISTOR BUK9508 Search Results

    TRANSISTOR BUK9508 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BUK9508 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BUK9508-55

    Abstract: BUK9608-55
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology


    Original     		OT404 BUK9608-55 BUK9508-55 BUK9608-55 PDF

    BUK9508-55

    Abstract: PHB125N06LT 4100us
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology


    Original     		OT404 PHB125N06LT BUK9508-55 PHB125N06LT 4100us PDF

    buk9508

    Abstract: BUK9508-55 BUK9608-55
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology


    Original     		OT404 BUK9608-55 buk9508 BUK9508-55 BUK9608-55 PDF

    45118

    Abstract: TRANSISTOR SMD MARKING CODE RG F/45118
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology


    Original     		BUK9608-55 OT404 drT404 BUK9608-55 /\\Roarer\root\data13\imaging\BITTING\cpl mismatch\20000819\081. \BUK9608-55 45118 TRANSISTOR SMD MARKING CODE RG F/45118 PDF

    TRANSISTOR BUK9508

    Abstract: BUK9508-55A BUK9608-55A transistor smd 412 BE
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features


    Original     		O220AB OT404 BUK9508-55A BUK9608-55A O220AB TRANSISTOR BUK9508 BUK9508-55A BUK9608-55A transistor smd 412 BE PDF

    a6585

    Abstract: smd transistor k 1540 BUK9508-55A
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features


    Original     		O220AB OT404 BUK9508-55A BUK9608-55A O220AB a6585 smd transistor k 1540 PDF

    BUK9508-55

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has


    Original     		O220AB BUK9508-55 BUK9508-55 PDF

    BUK950

    Abstract: BUK9508-55 BUK9508-55A
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has


    Original     		BUK9508-55 O220AB BUK9508-55 /\\Roarer\root\data13\imaging\BITTING\cpl mismatch\20000819\081. \BUK9508-55 BUK950 BUK9508-55A PDF

    BUK9508-55

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has


    Original     		O220AB BUK9508-55 BUK9508-55 PDF

    transistor BUK9508

    Abstract: BUK9508-55 BUK950
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has


    Original     		O220AB BUK9508-55 transistor BUK9508 BUK9508-55 BUK950 PDF

    transistor BUK9508

    Abstract: BUK9508-55B BUK95
    Text: BUK9508-55B N-channel TrenchMOS logic level FET Rev. 03 — 15 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		BUK9508-55B transistor BUK9508 BUK9508-55B BUK95 PDF

    Untitled

    Abstract: No abstract text available
    Text: BUK9508-55B N-channel TrenchMOS logic level FET Rev. 03 — 15 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		BUK9508-55B PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHP125N06LT, PHB125N06LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance


    Original     		PHP125N06LT, PHB125N06LT PHP125N06LT O220AB) PDF

    DIODE 542 SMD

    Abstract: transistor smd code marking nc g
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHP125N06LT, PHB125N06LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance


    Original     		PHP125N06LT, PHB125N06LT PHP125N06LT O220AB) OT404 PHB125N06LT PHP125N06LT DIODE 542 SMD transistor smd code marking nc g PDF

    PHP125N06LT

    Abstract: BUK9508-55 PHB125N06LT
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHP125N06LT, PHB125N06LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance


    Original     		PHP125N06LT, PHB125N06LT PHP125N06LT BUK9508-55 PHB125N06LT PDF

    SMD fet MARKING 34

    Abstract: transistor smd code marking nc g TRANSISTOR SMD mos fet
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHP125N06LT, PHB125N06LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance


    Original     		PHP125N06LT, PHB125N06LT PHP125N06LT O220AB) conventiPHB125N06LT PHP125N06LT PHB125N06LT SMD fet MARKING 34 transistor smd code marking nc g TRANSISTOR SMD mos fet PDF

    BUK9E08-55b

    Abstract: BUK9508-55B BUK9608-55B
    Text: BUK95/96/9E08-55B TrenchMOS logic level FET Rev. 02 — 13 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.


    Original     		BUK95/96/9E08-55B OT404, OT226 BUK9E08-55b BUK9508-55B BUK9608-55B PDF

    BUK9508-55A

    Abstract: No abstract text available
    Text: BUK95/9608-55A TrenchMOS logic level FET Rev. 03 — 6 May 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability:


    Original     		BUK95/9608-55A BUK9508-55A O-220AB) BUK9608-55A OT404 OT404, PDF

    Untitled

    Abstract: No abstract text available
    Text: D2 PA K BUK9608-55A N-channel TrenchMOS logic level FET Rev. 04 — 31 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		BUK9608-55A PDF

    BUK95

    Abstract: BUK9608-55A
    Text: D2 PA K BUK9608-55A N-channel TrenchMOS logic level FET Rev. 04 — 31 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		BUK9608-55A BUK95 BUK9608-55A PDF

    transistor D 982

    Abstract: gis 110 kv
    Text: Philips Semiconductors Product specification BUK9508-55 TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very


    OCR Scan     		BUK9508-55 T0220AB transistor D 982 gis 110 kv PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has


    OCR Scan     		BUK9508-55 T0220AB PDF

    S25 zener diode

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenehMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has


    OCR Scan     		BUK9508-55 T0220AB IE-02 1E-05 S25 zener diode PDF

    K950

    Abstract: No abstract text available
    Text: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on B U K9508-55 T r e n c h M O S transistor L o g i c level F E T G E N E R A L DE SCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope using ’t re n ch ’


    OCR Scan     		K9508-55 K950 PDF