BUK9E08-55B |
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NXP Semiconductors
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N-channel TrenchMOS logic level FET |
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BUK9E08-55B |
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Philips Semiconductors
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Trenchmos logic level FET |
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Original |
PDF
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BUK9E08-55B,127 |
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NXP Semiconductors
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Trenchmos logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 16 nC; RDS(on): 7@10V8.4@5V9.3@4.5V mOhm; Thermal Resistance: 0.74 K/W; VDSmax: 55 V; Package: SOT226 (I2PAK); Container: Horizontal, Rail Pack |
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Original |
PDF
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BUK9E08-55B,127 |
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NXP Semiconductors
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BUK9E08-55B - N-channel TrenchMOS logic level FET, SOT226 Package, Standard Marking, Horizontal, Rail Pack |
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Original |
PDF
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