TRANSISTOR BU 104 Search Results

TRANSISTOR BU 104 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR BU 104 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
CA18CLF08 Abstract: No abstract text available Text: Proximity Sensors Capacitive LD E I H Thermoplastic Polyester Housing LES P I TR Type CA, M18, DC • Featuring TRIPLESHIELD™ sensor protection • Adjustable sensing distance 3-8 mm or 3-12 mm • Rated operational voltage: 10-40 VDC • Output: DC 200 mA, NPN or PNP	Original	CA18CL. CA18CLF08	PDF
glass break sensor diagram Abstract: tripleshield tm PPAP liquid level sensor capacitive 3025 capacitive proximity sensor P 67 BN ST37 EC3016PPAPL Text: Proximity Sensors Capacitive LD E I H Thermoplastic Polyester Housing LES P I TR Type EC, M 30, DC • Featuring TRIPLESHIELD™ Sensor protection • Adjustable sensing distance 2-16 mm or 4-25 mm • Rated operational voltage: 10-40 VDC • Output: DC 200 mA, NPN or PNP	Original		PDF
CA18CLN12PA Abstract: CA18CLN12PAM1 CA18CLF08PAM1 liquid capacitive proximity sensors CA18CLF08NAM1 CA18CLF08PA ca18clf08nam CA18CLN12NAM1 CA18CLF08NA CA18CLN12NA Text: Proximity Sensors Capacitive LD E I H Thermoplastic Polyester Housing LES P I TR Type CA, M18, DC • • • • • • • • • Product Description Capacitive proximity switches with either sensing distance 8 mm flush mounted in metal or sensing distance 12 mm nonflush mounted. 4-wire DC output with both make NO and	Original	CA18CL. CA18CLN12PA CA18CLN12PAM1 CA18CLF08PAM1 liquid capacitive proximity sensors CA18CLF08NAM1 CA18CLF08PA ca18clf08nam CA18CLN12NAM1 CA18CLF08NA CA18CLN12NA	PDF
Capacitive Sensors Abstract: tripleshield tm EC301 EC3025PPAPL 3025 industrial capacitive proximity sensor liquid level sensor capacitive PPAP ST37 ST37 steel Text: Proximity Sensors Capacitive LD E I H Thermoplastic Polyester Housing LES P I TR Type EC, M30, DC • • • • • • • • • • Product Description Capacitive proximity switches with either sensing distance 16 mm flush mounted in metal or sensing distance 25 mm	Original		PDF
tripleshield tm Abstract: liquid level sensor capacitive EC3025NPAPL capacitive level sensor EC3025xPAPL 3025 500E ST37 EC3016PPAPL 3025xPAPL Text: Proximity Sensors Capacitive LD E I H Thermoplastic Polyester Housing LES P I TR Type EC, M 30, DC • Featuring TRIPLESHIELD™ Sensor protection • Adjustable sensing distance 2-16 mm or 4-25 mm • Rated operational voltage: 10-40 VDC • Output: DC 200 mA, NPN or PNP	Original		PDF
Capacitive Sensors Abstract: tripleshield tm ST37 steel 3025 PPA 3025 carlo gavazzi St ST37 Text: Proximity Sensors Capacitive LD E I H Stainless Steel Housing LES P I TR Type EC, M30, DC • Featuring TRIPLESHIELD™ sensor protection • Rated operational voltage: 10-40 VDC • Adjustable sensing distance 2-16 mmor 4-25 mm • Output: DC 200 mA, NPN or PNP	Original		PDF
xps-dme Abstract: relais schema de branchement S11S12 Mang relais S11-S12 S11-S13 schema led table magnetic Switch wiring diagrams AAHY Text: XPS-DME FR GB DE 0RGXOH GH VpFXULWp SRXU DX WRWDO LQWHUUXSWHXUV PDJQpWLTXHV FRPSRUWDQW FKDFXQ XQ FRQWDFW j IHUPHWXUH HW XQ FRQWDFW j RXYHUWXUH YQT9H@Q 6DIHW\ PRGXOH IRU D WRWDO RI PDJQHWLF VZLWFKHV ZLWK D QRUPDOO\ RSHQ DQG D QRUPDOO\ FORVHG FRQWDFW HDFK	Original	S11-S12, S11-S13) xps-dme relais schema de branchement S11S12 Mang relais S11-S12 S11-S13 schema led table magnetic Switch wiring diagrams AAHY	PDF
pnp transistor 1000v Abstract: transistor buv 90 bux diode darlington NPN 1000V transistor pnp transistor 600V transistor ESM 30 buv PNP transistor BU 104 NPN Transistor VCEO 1000V transistor BUX 48 Text: SUPERSWITCH transistor TOP-3 selector guide guide de sélection transistors TOP-3 SUPERSWITCH \ V C E O sus \ v CEX THOMSON-CSF 60V 80V 90V 125 V 150V 400V 450V 120V 160V 180V 250V 200V 850V 1000V Case fC (sat) 40 A BU W 4ff 30 A BU W 49 20 A BUX 69 IS A	OCR Scan	BUV48 BUV47 CB-244 CB-285 pnp transistor 1000v transistor buv 90 bux diode darlington NPN 1000V transistor pnp transistor 600V transistor ESM 30 buv PNP transistor BU 104 NPN Transistor VCEO 1000V transistor BUX 48	PDF
toroid FT10 Abstract: BUL45F 221A-06 221D BUL45 MJE18006 MJF18006 1000 watt hf transistor 12 volt 150 watt hf transistor 12 volt Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU L45* BUL45F* Designer’s Data Sheet NPN Silicon Power Transistor 'M otorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS High Voltage SWITCHMODE™ Series Designed for use in electronic ballast light ballast and in Switchmode Power	OCR Scan	BUL45F, E69369 BUL45 BUL45F toroid FT10 221A-06 221D MJE18006 MJF18006 1000 watt hf transistor 12 volt 150 watt hf transistor 12 volt	PDF
TRANSISTOR D 2627 Abstract: Telefunken Electronic transistor D 2624 transistor k 2628 Telefunken 105 transistor 2all CB-108 ic 546 DIN 41872 transistor BU 104 Text: TELEFUNKEN ELECTRONIC 17E D • ÔSHDDTb DOQRMfi? ■ BU 546 TTtliLEHFtyJDiSSES&i} electronic Crwtivel«chooioo«s Silicon NPN Power Transistor Applications; Switching mode power supply Features: • In triple diffusion technique • Short switching time • High reverse voltage	OCR Scan	r-33-13 T-33-13 2380T TRANSISTOR D 2627 Telefunken Electronic transistor D 2624 transistor k 2628 Telefunken 105 transistor 2all CB-108 ic 546 DIN 41872 transistor BU 104	PDF
TRANSISTOR D 2627 Abstract: transistor D 2624 transistor k 2628 TRANSISTOR 1300 3B on 2518 transistor TCA 321 Telefunken Electronic 12A3 T0126 BU546 Text: TELEFUNKEN ELECTRONIC 17E D • ÔSHDDTb DOQRMfi? ■ BU 546 TTtliLEHFtyJDiSSES&i} electronic Crwtivel«chooioo«s Silicon NPN Power Transistor Applications; Switching mode power supply Features: • In triple diffusion technique • Short switching time • High reverse voltage	OCR Scan	r-33-13 T0126 15A3DIN TRANSISTOR D 2627 transistor D 2624 transistor k 2628 TRANSISTOR 1300 3B on 2518 transistor TCA 321 Telefunken Electronic 12A3 T0126 BU546	PDF
MTPBP10 Abstract: UL-44 l44 transistor transistor L44 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet B U L44 * BU L44F* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications •Motorola Pffcr#d Dtvtc* POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS The BUL44/BUL44F have an applications specific state-of-the-art die designed	OCR Scan	BUL44/BUL44F MTPBP10 UL-44 l44 transistor transistor L44	PDF
25b44 Abstract: transistor 546 transistor c 546 b BU 103 A transistor MAS 20 RCA transistor BU 104 mas 6 rca ZD 103 ZD 103 ma diagram pulsa Text: A E C CORP 17E D Da a T 4 2 b GOGTMa? 4 BU 546 l? iE L iK £ K S \ l3 Q e le c t r o n ic O tatra Technooges r - 3 3 - is Silicon NPN Power Transistor A p p lic a tio n s : Sw itching mode power supply Features: • In triple diffusion technique ' Short sw itching tim e	OCR Scan	DaaT42b r-23-13 Q02T4Sb T-33-13 QQET42t. f-33-13 25b44 transistor 546 transistor c 546 b BU 103 A transistor MAS 20 RCA transistor BU 104 mas 6 rca ZD 103 ZD 103 ma diagram pulsa	PDF
transistor BU 104 Abstract: TRANSISTOR 612 transistor BU 102 transformer ferrite core transistor BU 110 BU104 emetteur power transfo deflexion coil transformer ferrite Text: BU 104 NPN S IL IC O N T R A N S IS T O R , D IF F U S E D M E S A TRAN SISTO R NPN SILICIUM, M ESA D IFFU S E Th e B U 1 0 4 is a fast switching high voltage transistor. It is p rim a rly intended fo r use in ho rizontal d e fle x io n o u tp u t stage o f black and	OCR Scan	CB-19on transistor BU 104 TRANSISTOR 612 transistor BU 102 transformer ferrite core transistor BU 110 BU104 emetteur power transfo deflexion coil transformer ferrite	PDF

TRANSISTOR BDX Abstract: transistor BDX 62 A transistor BU 184 bdx 330 BU800 transistor BDX 65 transistor BU 109 darlington NPN 1000V 8a transistor ESM855 h21e BU 208 Text: SUPERSWITCH high power transistor M U 86 selector guide guide de sélection transistors grande puissance MU 86 SUPERSWITCH power transistor and darlington for TV applications selector guide guide de sélection transistors de puissance et darlingtons pour applications TV	OCR Scan	130CIV 109DP O-220 104DP BUX37 CB-159) BUV54 CB-19 TRANSISTOR BDX transistor BDX 62 A transistor BU 184 bdx 330 BU800 transistor BDX 65 transistor BU 109 darlington NPN 1000V 8a transistor ESM855 h21e BU 208	PDF
darlington NPN 1000V 8a transistor Abstract: NPN Transistor 600V TO-220 darlington NPN 600V 8a transistor transistor BU 104 darlington NPN 600V 8a transistor ESM 16 pnp transistor 800v transistor 406 specification transistor BU 109 transistor buv 90 Text: SUPERSWITCH high power transistor M U 86 selector guide guide de sélection transistors grande puissance MU 86 SUPERSWITCH power transistor and darlington for TV applications selector guide guide de sélection transistors de puissance et darlingtons pour applications TV	OCR Scan	130CIV 109DP O-220 104DP CB-244 CB-285 darlington NPN 1000V 8a transistor NPN Transistor 600V TO-220 darlington NPN 600V 8a transistor transistor BU 104 darlington NPN 600V 8a transistor ESM 16 pnp transistor 800v transistor 406 specification transistor BU 109 transistor buv 90	PDF
BUK201-50Y Abstract: No abstract text available Text: This Material Copyrighted By Its Respective Manufacturer Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch BUK201-50Y LIMITING VALUES Limiting values in accordance with the Absolute Maximum System I EC 134 SYM BOL PARAMETER	OCR Scan	BUK201-50Y OT263 T0220 BUK201-50Y	PDF
transistor buv 90 Abstract: transistor ESM 3004 transistor ESM 16 transistor Buv 48 transistor ESM 30 transistor ESM 3000 transistor ESM transistor ESM 3001 transistor ESM 3006 transistor buv 46 C Text: SUPERSWITCH transistor T 0 -2 2 0 AB selector guide guide de sélection transistors TO-220 AB SUPERSWITCH \v c E O s u s \ VCEX 90V 120V 200V 400V 180V 240V 400V 850V Casa 'C(sat) 12 A 8 A 6 A BUV 26 BUV 27 BUV 28 2,5 A BUV 46 1 BUV 36 A w SUPERSWITCH power transistor TO-83 selector guide	OCR Scan	O-220 00V-600V 1000T 2060T CB-244 CB-285 transistor buv 90 transistor ESM 3004 transistor ESM 16 transistor Buv 48 transistor ESM 30 transistor ESM 3000 transistor ESM transistor ESM 3001 transistor ESM 3006 transistor buv 46 C	PDF
transistor k 425 Abstract: sc 107 transistor npn, transistor, sc 107 b BU522 transistor transistor 0190 C107M BU522 BU522B 221A-04 BU522A Text: MOTOROLA SC XSTRS/R F 12E I b3b75SM Q0fl4fl22 7 \| BU522 BU522A BU522B MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH V O LTA G E SILICON POWER DARLINGTO NS 7 AMPERES Power Transistor mainly intended for use as ignition circuit output transistor. DARLINGTON T R IPLE D IFFU SED	OCR Scan	r-33-73 BU522 BU522A BU522B BU522) BU522A) BU522B) BU522A, transistor k 425 sc 107 transistor npn, transistor, sc 107 b BU522 transistor transistor 0190 C107M BU522 BU522B 221A-04 BU522A	PDF
VEB mikroelektronik Abstract: Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft Text: m B Ik i^ ts je le l-c te n o r iil-c information Applikation m l^ o e le l-c fe n a riil-c Information Applikation H EFT 17 LEISTUNGSELEKTRONIK 4 Die sicheren A rbeitsbereiche Leistungsschalttransistoren VEB MIKROELEKTRONIK „VARLIIE8KNECHT“57AHNSDORP	OCR Scan	57AHNSDORP VEB mikroelektronik Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft	PDF
BUK202-50Y Abstract: PowerMOS transistor TOPFET high side switch Text: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.	OCR Scan	BUK202-50Y OT263 T0220 BUK202-50Y PowerMOS transistor TOPFET high side switch	PDF
ST102 Abstract: LS38 Y-H8 846 transistor Text: SILICON TRANSI STOR CORP SbE D 0254022 OOOQ^TQ 31N « S T C SILICON TRANSISTOR CORPORATION Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 400 VOLTS 0.33 OHMS QUAD N CHANNEL POWER MOSFET DEVICE TYPE STQ402	OCR Scan	STQ402 ST102 MIL-S-19500 ST102 LS38 Y-H8 846 transistor	PDF
BUK202-50X Abstract: PowerMOS transistor TOPFET high side switch BUK202 Text: Product specification Philips Semiconductors PowerMOS transistor BUK202-50X TOPFET high side DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured	OCR Scan	BUK202-50X OT263 T0220 BUK202-50X PowerMOS transistor TOPFET high side switch BUK202	PDF
M5M51008AFP Abstract: No abstract text available Text: MITSUBISHI LSIs M5M51008AFP,VP, RV-12VL,-15VL,-12VLL,-15VLL 1048576-BIT 131Q72-WORD BY 8-BIT CM0S STATIC RAM POWER DOWN CHARACTERISTICS (1) ELECTRICAL CHARACTERISTICS (Ta = 0 ~ 7 0 X I. unless otherwise noted) Parameter Symbol V cccpo) Power down supply voltage	OCR Scan	M5M51008AFP RV-12VL -15VL -12VLL -15VLL 1048576-BIT 131Q72-WORD	PDF

TRANSISTOR BU 104 Search Results

TRANSISTOR BU 104 Result Highlights (5)

TRANSISTOR BU 104 Datasheets Context Search

CA18CLF08

glass break sensor diagram

CA18CLN12PA

Capacitive Sensors

tripleshield tm

Capacitive Sensors

xps-dme

pnp transistor 1000v

toroid FT10

TRANSISTOR D 2627

TRANSISTOR D 2627

MTPBP10

25b44

transistor BU 104

TRANSISTOR BDX

darlington NPN 1000V 8a transistor

BUK201-50Y

transistor buv 90

transistor k 425

VEB mikroelektronik

BUK202-50Y

ST102

BUK202-50X

M5M51008AFP