TRANSISTOR BU Search Results

TRANSISTOR BU Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR BU Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IC-3479 Abstract: IC-8359 pa1428a uPA1428 transistor array high speed uPA1428AH IEI-1213 PA1428 MF-1134 PA1428AH Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1428A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1428A is NPN silicon epitaxial Darlington Power (in millimeters) Transistor Array that built in Surge Absorber 4 circuits	Original	PA1428A PA1428A PA1428AH IC-3479 IC-8359 uPA1428 transistor array high speed uPA1428AH IEI-1213 PA1428 MF-1134 PA1428AH	PDF
RN1110FS Abstract: RN1111FS RN2110FS RN2111FS Text: RN1110FS,RN1111FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1110FS, RN1111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count.	Original	RN1110FS RN1111FS RN1110FS, RN2110FS, RN2111FS RN1111FS RN2110FS RN2111FS	PDF
Untitled Abstract: No abstract text available Text: RN49A6FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN49A6FS Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count.	Original	RN49A6FS	PDF
RN4993FS Abstract: No abstract text available Text: RN4993FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4993FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.1±0.05 Incorporating a bias resistor into a transistor reduces parts count.	Original	RN4993FS RN4993FS	PDF
369D Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic	Original	BUD42D BUD42D BUD42D/D 369D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG	PDF
2SC2945 Abstract: QK SOT89 2SC2954 mark qk sot Text: DATA SHEET SILICON TRANSISTOR 2SC2954 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC2954 is an NPN epitaxial silicon transistor disigned for Unit: mm low noise wide band amplifier and buffer amplifier of OSC, for VHF	Original	2SC2954 2SC2954 2SC2945 QK SOT89 mark qk sot	PDF
RN4984FS Abstract: No abstract text available Text: RN4984FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4984FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count.	Original	RN4984FS RN4984FS	PDF
IC-6339 Abstract: PA1453 IEI-1213 MEI-1202 MF-1134 ic 926 Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1453 PNP SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µ PA1453 is PNP silicon epitaxial Power Transistor in millimeters Array that built in 4 circuits designed for driving solenoid,	Original	PA1453 PA1453 PA1453H IC-6339 IEI-1213 MEI-1202 MF-1134 ic 926	PDF
2SC5436 Abstract: 2SC5800 uPA863TD-Q2 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor	Original	PA863TD 2SC5436, 2SC5800) S21e2 2SC5436 2SC5800 2SC5436 2SC5800 uPA863TD-Q2	PDF
Untitled Abstract: No abstract text available Text: UTC BU406 NPN EXPITAXIAL PLANAR TRANSISTOR SILICON NPN SWITCHING TRANSISTOR DESCRIPTION The UTC BU406 is a NPN expitaxial planar transistor. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110° CRT.	Original	BU406 BU406 O-220 QW-R203-021	PDF
BU406 SGS Abstract: china tv schematic diagram BU406 transistor BU406 Text: BU406 SILICON NPN SWITCHING TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR VERY HIGH SWITCHING SPEED APPLICATIONS: HORIZONTAL DEFLECTION FOR MONOCHROME TV ■ 3 1 DESCRIPTION The BU406 is a silicon epitaxial planar NPN transistor in Jedec TO-220 plastic package.	Original	BU406 BU406 O-220 O-220 BU406 SGS china tv schematic diagram transistor BU406	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD UD3K DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTOR FEATURES 5 6 * Both the DTA114E chip and DTC114E chip in a SOT-363 package. * NPN/PNP silicon transistor(Built-in resistor type) 1 EQUIVALENT CIRCUIT 3 2 R1	Original	DTA114E DTC114E OT-363 OT-363 QW-R218-004 120mW	PDF
Untitled Abstract: No abstract text available Text: TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 Unit: mm ○ Swtching Applications ○ Load Switch Applications 0.33±0.05 0.05 M A • 2.4±0.1 ○ Multi-chip discrete device; built-in PNP Transistor for	Original	TPCP8F01	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET NEC COMPOUND TRANSISTOR _jfPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY OUTLINE DIMENSIONS Units in mm FEATURES • TW O BUILT-IN DIFFER EN TIA L AM PLIFIER CIRCUITS: • OUTSTANDING hFE LINEARITY • TW O PACKAGE O PTIO NS: (Each Transistor has fr 9 GHz)	OCR Scan	uPA102 PA102B: PA102G: 14-pin PA102	PDF

diode BB102 Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,	Original	ADE-A08-003G diode BB102 RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet	PDF
MARKING KL Abstract: NE687 Text: NPN SILICON RF TWIN TRANSISTOR PA828TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • Built-in low phase distortion transistor suited for OSC applications fT = 9.0 GHz TYP., ⏐S21e⏐2 = 7.5 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz	Original	PA828TD S21e2 NE687) NE687 PA828TD-A PA828TD-T3 PA828TD-T3-A MARKING KL NE687	PDF
2SA1743 Abstract: C11531E Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1743 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1743 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at low VCE(sat). This transistor is	Original	2SA1743 2SA1743 C11531E	PDF
2SC5436 Abstract: 2SC5600 NEC 821 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA842TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • 2 different built-in transistors (2SC5436, 2SC5600) Q1: Low noise transistor NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz	Original	PA842TC 2SC5436, 2SC5600) S21e2 2SC5436 2SC5600 2SC5436 2SC5600 NEC 821	PDF
RN1110ACT Abstract: RN1111ACT RN2110ACT RN2111ACT Text: RN2110ACT,RN2111ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110ACT,RN2111ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm	Original	RN2110ACT RN2111ACT RN1110ACT, RN1111ACT RN1110ACT RN1111ACT RN2111ACT	PDF
Untitled Abstract: No abstract text available Text: RN1107CT ~ RN1109CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1107CT,RN1108CT,RN1109CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications •	Original	RN1107CT RN1109CT RN1107CT RN1108CT RN2107CT RN2109CT RN1108CT	PDF
RN1112ACT Abstract: RN1113ACT RN2112ACT RN2113ACT Text: RN1112ACT, RN1113ACT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1112ACT,RN1113ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications • Unit: mm	Original	RN1112ACT, RN1113ACT RN1112ACT RN2112ACT, RN2113ACT RN1113ACT RN2112ACT RN2113ACT	PDF
RN1901AFS Abstract: RN2901AFS RN2902AFS RN2903AFS RN2904AFS RN2905AFS RN2906AFS Text: RN2901AFS~RN2906AFS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Transistor with Built-in Bias Resistor) RN2901AFS, RN2902AFS, RN2903AFS RN2904AFS, RN2905AFS, RN2906AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Original	RN2901AFS RN2906AFS RN2901AFS, RN2902AFS, RN2903AFS RN2904AFS, RN2905AFS, RN2902AFS RN1901AFS RN2902AFS RN2903AFS RN2904AFS RN2905AFS RN2906AFS	PDF
Untitled Abstract: No abstract text available Text: RN2107CT ~ RN2109CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2107CT,RN2108CT,RN2109CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm	Original	RN2107CT RN2109CT RN2107CT RN2108CT RN1107CT RN1109CT RN2108CT	PDF
5E25 Abstract: 2SC5600 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA891TC NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUMER MINIMOLD FEATURES • Built-in low phase distortion transistor suited for OSC operation fT = 5.0 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz	Original	PA891TC S21e2 2SC5600) 2SC5600 PA891TC-T1 5E25 2SC5600	PDF

TRANSISTOR BU Search Results

TRANSISTOR BU Result Highlights (5)

TRANSISTOR BU Datasheets Context Search

IC-3479

RN1110FS

Untitled

RN4993FS

369D

2SC2945

RN4984FS

IC-6339

2SC5436

Untitled

BU406 SGS

Untitled

Untitled

Untitled

diode BB102

MARKING KL

2SA1743

2SC5436

RN1110ACT

Untitled

RN1112ACT

RN1901AFS

Untitled

5E25