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    TRANSISTOR BSC 188 Search Results

    TRANSISTOR BSC 188 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BSC 188 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    an5296

    Abstract: AN5296 application note AN5296 Application note CA3018 AN5296 Application of the CA3018 AN5296 Application of the CA3018 Integrated CA3018 emitter area of CA3083 CA3146 FN532 CA30
    Text: CA3146, CA3146A, CA3183, CA3183A T O DU C T TE PR E O DU C L R O P S E T OB U 3 BSTIT , CData 308Sheet LE SU 86 A POSSIB 3046, CA30 CA May 2001 FN532.6 High-Voltage Transistor Arrays Features The CA3146A, CA3146, CA3183A, and CA3183 are general purpose high voltage silicon NPN transistor arrays on a


    Original     		PDF CA3146, CA3146A, CA3183, CA3183A FN532 CA3183A, CA3183 CA3146A an5296 AN5296 application note AN5296 Application note CA3018 AN5296 Application of the CA3018 AN5296 Application of the CA3018 Integrated CA3018 emitter area of CA3083 CA3146 CA30

    an5296

    Abstract: AN5296 Application note CA3018 AN5296 Application of the CA3018 Integrated AN5296 application note "Application of the CA3018" ca3046 Thyristor bst 2 high voltage operational amplifier ic AN5296 Application of the CA3018 CA3146A
    Text: CA3146, CA3146A, CA3183, CA3183A TM T ODUC T T E PR E ODUC L R O P S E T OB U IT 3 BST A308Sheet L E SU 86, CData POSSIB 3046, CA30 CA itle A31 , 314 , 318 318 bt ighlte ntor rays utho ) eyrds terrpoion, ee, nsisay, st N, V, ma ma, z ft, h lt- May 2001 File Number


    Original     		PDF CA3146, CA3146A, CA3183, CA3183A CA3183A, CA3183 CA3146A CA3146 an5296 AN5296 Application note CA3018 AN5296 Application of the CA3018 Integrated AN5296 application note "Application of the CA3018" ca3046 Thyristor bst 2 high voltage operational amplifier ic AN5296 Application of the CA3018

    AN5296 Application of the CA3018 Integrated

    Abstract: an5296 ca314 DE ca314 application notes AN5296 Application note CA3018 "Application of the CA3018" AN5296 Application of the CA3018 Integrated-Ci CA3183E CA318 CA3083
    Text: [ /Title CA31 46, CA314 6A, CA318 3, CA318 3A /Subject (HighVoltage Transistor Arrays ) /Autho r () /Keywords (Intersil Corporation, five, transistor array, low cost NPN, 40V, 50ma 75ma, mhz ft, high volt- CA3146, CA3146A, CA3183, CA3183A TM Data Sheet April 2000


    Original     		PDF CA314 CA318 CA3146, CA3146A, CA3183, CA3183A CA3183A, AN5296 Application of the CA3018 Integrated an5296 ca314 DE ca314 application notes AN5296 Application note CA3018 "Application of the CA3018" AN5296 Application of the CA3018 Integrated-Ci CA3183E CA318 CA3083

    CA3081

    Abstract: vp 3082 transistor Common collector configuration 40736R CA3081F CA3081M CA3082 CA3082M CA3082M96 DR2000
    Text: CA3081, CA3082 UCT PROD E PRODUCT E T E L T O B SO STITU er at E SUB upport Cen t sc L IB S /t POS al S il.com FOR A ou r Technic wData .intersSheet w t w c a IL or c ont NTERS 1-888-I General Purpose High Current NPN Transistor Arrays 480.6 • CA3081 - Common Emitter Array


    Original     		PDF CA3081, CA3082 1-888-I CA3081 CA3082 vp 3082 transistor Common collector configuration 40736R CA3081F CA3081M CA3082M CA3082M96 DR2000

    vp 3082

    Abstract: CA3082 CA3081 DR200 40736R CA3081F CA3081M CA3082M CA3082M96 DR2000
    Text: CA3081, CA3082 Data Sheet November 1999 General Purpose High Current NPN Transistor Arrays • CA3081 - Common Emitter Array The CA3081 and CA3082 are capable of directly driving seven segment displays, and light emitting diode LED displays. These types are also well suited for a variety of


    Original     		PDF CA3081, CA3082 CA3081 CA3082 CA3081) CA3082) 100mA vp 3082 DR200 40736R CA3081F CA3081M CA3082M CA3082M96 DR2000

    Thyristor bst 2

    Abstract: CA3082 transistor arrays 5v CA3081 DR2000 40736R CA3081F CA3081M CA3082M CA3082M96
    Text: CA3081, CA3082 CT UCT PRODU E T PROD E E L T O U S IT B SIL O ST -INTER E SU B 8 L 8 8 IB S 1 PO S onsData Sheet om FOR A tral Applicati @in tersil.c p n p e call C mail: centa or e General Purpose High Current NPN Transistor Arrays itle A30 , 308 bt enl rse


    Original     		PDF CA3081, CA3082 1-888-I CA3082 CA3081) CA3082) 100mA Thyristor bst 2 transistor arrays 5v CA3081 DR2000 40736R CA3081F CA3081M CA3082M CA3082M96

    610E

    Abstract: 800E CA3227 CA3227E CA3227M CA3227M96
    Text: CA3227 TM Data Sheet High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz The CA3227 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the transistors exhibits a value of fT in excess of 3GHz, making


    Original     		PDF CA3227 CA3227 610E 800E CA3227E CA3227M CA3227M96

    marking code acw

    Abstract: marking ACY SOT23-6 MARKING ada MAX6511
    Text: 19-1819; Rev 2; 10/04 Low-Cost, Remote SOT Temperature Switches The MAX6511/MAX6512/MAX6513 are fully integrated, remote temperature switches that use an external P-N junction typically a diode-connected transistor as the sensing element to measure the remote temperature.


    Original     		PDF MAX6511/MAX6512/MAX6513 MAX6511 MAX6513 MAX6512 T1433-2 marking code acw marking ACY SOT23-6 MARKING ada

    SMD TRANSISTORS AAA

    Abstract: GDIP1-T16 HFA3127 high frequency transistor
    Text: HFA3127/883 Ultra High Frequency Transistor Array February 1995 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HFA3127/883 is an Ultra High Frequency Transistor


    Original     		PDF HFA3127/883 MIL-STD883 HFA3127/883 SMD TRANSISTORS AAA GDIP1-T16 HFA3127 high frequency transistor

    RM4191D

    Abstract: RC4191 RC4192 RC4193 RC4391
    Text: www.fairchildsemi.com RC4191/RC4192/RC4193 Micropower Switching Regulator Features • • • • • • • • • • High efficiency – 85% typical Low quiescent current – 215 mA Adjustable output – 1.3V to 30V High switch current – 200 mA Bandgap reference – 1.31V


    Original     		PDF RC4191/RC4192/RC4193 RC4191/4192/4193 DS30004191 RM4191D RC4191 RC4192 RC4193 RC4391

    t 3086

    Abstract: CA308
    Text: CA-3086 Data Sheet December 15, 2011 FN483.6 General Purpose NPN Transistor Array Applications The CA3086 consists of five general-purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially


    Original     		PDF CA-3086 FN483 CA3086 120MHz. 120MHz t 3086 CA308

    an5296

    Abstract: "Application of the CA3018" AN5296 application note AN5296 Application note CA3018 AN5296 Application of the CA3018 INTERSIL AN5296 CA3086 CA3018 "an5296 Application of the CA3018" AN5296 Application of the CA3018 Integrated
    Text: CA3086 Data Sheet August 2003 FN483.5 General Purpose NPN Transistor Array Applications The CA3086 consists of five general-purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially


    Original     		PDF CA3086 FN483 CA3086 120MHz 120MHz. an5296 "Application of the CA3018" AN5296 application note AN5296 Application note CA3018 AN5296 Application of the CA3018 INTERSIL AN5296 CA3018 "an5296 Application of the CA3018" AN5296 Application of the CA3018 Integrated

    ALG TRANSISTOR

    Abstract: AACD AACG AACE TRANSISTOR ALG 24 MAX1589AEZT MAX1589A MAX1589AETT T633-2 tdFN PACKAGE thermal resistance
    Text: 19-3664; Rev 0; 4/05 Low-Input-Voltage, 500mA LDO Regulator with RESET in SOT and TDFN The MAX1589A low-dropout linear regulator operates from a +1.62V to +3.6V supply and delivers a guaranteed 500mA continuous load current with a low 175mV dropout. The high-accuracy ±0.5% output voltage is


    Original     		PDF 500mA MAX1589A 175mV per10 T1433-2 ALG TRANSISTOR AACD AACG AACE TRANSISTOR ALG 24 MAX1589AEZT MAX1589AETT T633-2 tdFN PACKAGE thermal resistance

    Untitled

    Abstract: No abstract text available
    Text: 19-3664; Rev 0; 4/05 Low-Input-Voltage, 500mA LDO Regulator with RESET in SOT and TDFN The MAX1589A low-dropout linear regulator operates from a +1.62V to +3.6V supply and delivers a guaranteed 500mA continuous load current with a low 175mV dropout. The high-accuracy ±0.5% output voltage is


    Original     		PDF 500mA MAX1589A 175mV T1433-2

    MAX6627MTA T

    Abstract: MAX6627MKA-T thermometer dallas spi siemens thermocouple "Keyboard Controller" L type thermocouple conversion table MAX6627 MAX6627MKA SOT-23-8l 2N3904
    Text: 19-2032; Rev 3; 4/06 Remote ±1°C Accurate Digital Temperature Sensors with SPI-Compatible Serial Interface Features The MAX6627/MAX6628 precise digital temperature sensors report the temperature of a remote sensor. The remote sensor is a diode-connected transistor, typically


    Original     		PDF MAX6627/MAX6628 2N3904 MAX6627/MAX6628 MAX6627MTA T MAX6627MKA-T thermometer dallas spi siemens thermocouple "Keyboard Controller" L type thermocouple conversion table MAX6627 MAX6627MKA SOT-23-8l

    305 Power Mosfet MOTOROLA

    Abstract: Transistor motorola 418 MGW30N60
    Text: MOTOROLA Order this document by MGW30N60/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGW30N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		PDF MGW30N60/D MGW30N60 MGW30N60/D* 305 Power Mosfet MOTOROLA Transistor motorola 418 MGW30N60

    heat sensor with fan cooling application

    Abstract: 2N3904 CMPT3904 MAX6668 MAX6668AUA MAX6670
    Text: 19-2133; Rev 1; 9/02 Remote Temperature Switches with Integrated Fan Controller/Driver Features ♦ +12V, 250mA Integrated Fan Driver ♦ No Calibration Required ♦ Pin-Selectable 4°C, 8°C, or 12°C Hysteresis MAX6670 ♦ Factory-Programmed Temperature Thresholds


    Original     		PDF 250mA MAX6670) 10-Pin MAX6668AUA_ MAX6670AUB_ heat sensor with fan cooling application 2N3904 CMPT3904 MAX6668 MAX6668AUA MAX6670

    2N3904

    Abstract: MAX6668 MAX6668AUA40 MAX6668AUA45 MAX6668AUA50 MAX6668AUA60 MAX6668AUA70 MAX6668AUA75 MAX6670 2n3904 2n3906
    Text: 19-2133; Rev 2; 11/02 Remote Temperature Switches with Integrated Fan Controller/Driver Features ♦ +12V, 250mA Integrated Fan Driver ♦ No Calibration Required ♦ Pin-Selectable 4°C, 8°C, or 12°C Hysteresis MAX6670 ♦ Factory-Programmed Temperature Thresholds


    Original     		PDF 250mA MAX6670) 10-Pin MAX6668AUA40 MAX6668AUA45 MAX6668AUA50 MAX6668AUA60 MAX6668AUA70 MAX6668AUA75 2N3904 MAX6668 MAX6670 2n3904 2n3906

    9012 npn details

    Abstract: pin configuration NPN transistor 9012 PNP 6649 QFN-16 747E0 FN3076
    Text: HFA3046, HFA3096, HFA3127, HFA3128 Data Sheet July 22, 2005 FN3076.12 Ultra High Frequency Transistor Arrays Features The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1


    Original     		PDF HFA3046, HFA3096, HFA3127, HFA3128 FN3076 HFA3127 HFA3128 HFA3046 9012 npn details pin configuration NPN transistor 9012 PNP 6649 QFN-16 747E0

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    BC309 equivalent

    Abstract: st 393 8-pin T0-226AE
    Text: MOTOROLA SC XSTRS/R F MbE D • b3b?2S4 Oa'Obll b ■MOTb SMALL-SIGNAL BIPOLAR TRANSISTORS — PLASTIC-ENCAPSULATED TRANSISTORS (continued) 7 ^ jZ 7 - Cs5 Table 1. Plastic-Encapsulated General-Purpose Transistors (continued) Case 29-03 — T0-226AE (1-WATT T0-92)


    OCR Scan     		PDF T0-226AE T0-92) BDC01D BC309 equivalent st 393 8-pin T0-226AE

    MC1466

    Abstract: MC1466L MC1466L equivalent schematic of mc1466 1E75 MJE340 REGULATOR DM 0265 R pin EQUIVALENT ITT 1N4001 7905 positive voltage regulator MC1466 L
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PRECISION WIDE RANGE VOLTAGE and CURRENT REGULATOR PRECISION WIDE RANGE VOLTAGE AND CURRENT REGULATOR T h is u n iq u e “f lo a t in g " re g u la t o r c a n d e liv e r h u n d r e d s o f v o lt s — lim ite d o n ly b y th e b r e a k d o w n v o lt a g e o f th e e x te rn a l s e rie s


    OCR Scan     		PDF MC1466L CMH30HO: MC1466 MC1466L equivalent schematic of mc1466 1E75 MJE340 REGULATOR DM 0265 R pin EQUIVALENT ITT 1N4001 7905 positive voltage regulator MC1466 L

    fair child power switch

    Abstract: No abstract text available
    Text: P A I R C H I I - D s e m ic o n d u c t o r w w w .fa ir c h ild s e m i.c o m tm R C 419 1 /R C 4 1 9 2 /R C 4 1 93 Micropower Switching Regulator Features • • • • • • • • • • High efficiency - 8 5 % typical Low quiescent current - 2 1 5 nA


    OCR Scan     		PDF RC4191/4192/4193 DS30004191 fair child power switch