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    TRANSISTOR BO 540 Search Results

    TRANSISTOR BO 540 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BO 540 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CD 5401

    Abstract: 2N5401 CD5401
    Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR 2N5401 9AW TO-92 CBE MARKING: CD 5401 High Voltage PNP Transistor For General Purpose And Telephony Applications.


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    PDF 2N5401 C-120 CD 5401 2N5401 CD5401

    Untitled

    Abstract: No abstract text available
    Text: Voltage Regulators AN1149NFHK 6-ch DC-DC Converter • Overview Unit: mm 9.0±0.2 7.0±0.1 36 25 24 37 0.75 7.0±0.1 9.0±0.2 M Di ain sc te on na tin nc ue e/ d 4 channels of step-up, 1 channel of step-down and 1 channel of step-up/down voltage, 6 channels in total have


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    PDF AN1149NFHK

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    Abstract: No abstract text available
    Text: Voltage Regulators AN1149FHK 6-ch DC-DC Converter • Overview Unit: mm 9.0±0.2 7.0±0.1 25 37 ■ Applications • Digital still cameras 0.5 12 0.20±0.05 1.0 1 0.10 M (1.0) 1.20 max. 0.15±0.05 (0.75) 0.10+0.10 –0.05 • Low voltage operation (1.5 V min.)


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    PDF AN1149FHK

    Untitled

    Abstract: No abstract text available
    Text: Voltage Regulators AN1149NFHK 6-ch DC-DC Converter • Overview Unit: mm 9.0±0.2 7.0±0.1 25 37 ■ Applications • Digital still cameras 0.5 12 0.20±0.05 1.0 1 0.10 M (1.0) 1.20 max. 0.15±0.05 (0.75) 0.10+0.10 –0.05 • Low voltage operation (1.5 V min.)


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    PDF AN1149NFHK

    BFP-540

    Abstract: VPS05605 transistor BO 540 Transistor MJE 540
    Text: SIEGET 45 BFP 540 NPN Silicon RF Transistor Preliminary data 3  For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB  Gold metallization for high reliability 2  SIEGET  45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF VPS05605 OT-343 50Ohm -j100 Jun-09-2000 BFP-540 VPS05605 transistor BO 540 Transistor MJE 540

    VPS05605

    Abstract: No abstract text available
    Text: SIEGET 45 BFP 540 NPN Silicon RF Transistor Preliminary data 3  For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB  Gold metallization for high reliability 2  SIEGET  45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF VPS05605 OT-343 50Ohm -j100 Oct-27-1999 VPS05605

    CC5401

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR CC5401 9AW TO-92 BCE MARKING : CC 5401 High Voltage PNP Transistor For General Purpose And Telephony Applications.


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    PDF CC5401 C-120 CC5401

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR CC5401 9AW TO-92 BCE MARKING : CC 5401 High Voltage PNP Transistor For General Purpose And Telephony Applications.


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    PDF CC5401 C-120

    NCP1392BD

    Abstract: IC 1392B 1392B ballast Self-Oscillating NCP1392 smps high power smps resonant llc NCP1392BDR2G SELF OSCILLATING HALF BRIDGE DRIVER IC DATA SHEET LLC resonant converters
    Text: NCP1392B High-Voltage Half-Bridge Driver with Inbuilt Oscillator The NCP1392B is a self−oscillating high voltage MOSFET driver primarily tailored for the applications using half bridge topology. Due to its proprietary high−voltage technology, the driver accepts bulk


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    PDF NCP1392B NCP1392B NCP1392/D NCP1392BD IC 1392B 1392B ballast Self-Oscillating NCP1392 smps high power smps resonant llc NCP1392BDR2G SELF OSCILLATING HALF BRIDGE DRIVER IC DATA SHEET LLC resonant converters

    MARKING W1 AD

    Abstract: CC5401
    Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR CC5401 9AW TO-92 BCE MARKING : CC 5401 High Voltage PNP Transistor For General Purpose And Telephony Applications.


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    PDF CC5401 C-120 MARKING W1 AD CC5401

    smps high power

    Abstract: NCP1392 three phase pfc kW
    Text: NCP1392B, NCP1392D High-Voltage Half-Bridge Driver with Inbuilt Oscillator The NCP1392B/D is a self−oscillating high voltage MOSFET driver primarily tailored for the applications using half bridge topology. Due to its proprietary high−voltage technology, the driver


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    PDF NCP1392B, NCP1392D NCP1392B/D NCP1392/D smps high power NCP1392 three phase pfc kW

    2N3417

    Abstract: NPN transistor ECB TO-92 transistor BO 540
    Text: TO-92 2N3417 is NPN silicon planar transistor designed for general purpose AF medium power applications. ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCBO 50V Collector-Emitter Voltage VCEO 50V Emitter-Base Voltage VE BO 5V Collector Current IC Total Power Dissipation


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    PDF 2N3417 2M3417 500mA NPN transistor ECB TO-92 transistor BO 540

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TPC8301 TO SHIBA FIELD EFFECT TRANSISTOR SILICON P C HANN EL MOS TYPE L2- tt-M O S V I TPC8301 LITH IU M ION BATTERY INDUSTRIAL APPLICATIONS NOTE BO O K PC PORTABLE M ACHINES A N D TOOLS • • • • Low Drain-Source ON Resistance : Rd S (ON)= 95mO (Typ.)


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    PDF TPC8301 20kfi)

    639 TRANSISTOR PNP

    Abstract: transistor ESM 692 NPN 337 esm 2907 pnp transistor npn 2222 transistor transistor C 548 B BC516 E C B BC 635 TRANSISTOR BC 557 PNP TRANSISTOR transistor bf 422 NPN
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -csf Case ^ ^ ^ 1 0 92 Polarity NPN PNP NPN CB-1% PNP NPN 0,8.1 A 0,4.0,6 A «0,2 A PNP v CEO 20 V B Ç 2 3 8 .


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    PDF BCW94 CB-76 639 TRANSISTOR PNP transistor ESM 692 NPN 337 esm 2907 pnp transistor npn 2222 transistor transistor C 548 B BC516 E C B BC 635 TRANSISTOR BC 557 PNP TRANSISTOR transistor bf 422 NPN

    TRANSISTOR BC 213

    Abstract: TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .


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    PDF BCW94 CB-76 TRANSISTOR BC 213 TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor

    transistor Bc 540

    Abstract: TRANSISTOR BC 135 transistor Bc 540 pin BC 540 TRANSISTOR Bc 540 transistor B 540 bcw 25 transistor bcw 91 transistor ESM635 transistor BC 635
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -c s f Case ^ ^ ^ 1 0 92 Polarity NPN PN P N PN CB-1% PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .


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    PDF BCW94 CB-76 transistor Bc 540 TRANSISTOR BC 135 transistor Bc 540 pin BC 540 TRANSISTOR Bc 540 transistor B 540 bcw 25 transistor bcw 91 transistor ESM635 transistor BC 635

    transistor bf 422 NPN

    Abstract: transistors BC 548 BC 558 transistor BC 338 BC 2222 BC 557 npn transistor bf 422 BC 547 pnp transistor 2N 5551 TRANSISTOR 642 npn 2222 transistor
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -csf Case ^ ^ ^ 1 0 92 Polarity NPN PN P N PN CB-1% PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .


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    PDF BCW94 transistor bf 422 NPN transistors BC 548 BC 558 transistor BC 338 BC 2222 BC 557 npn transistor bf 422 BC 547 pnp transistor 2N 5551 TRANSISTOR 642 npn 2222 transistor

    transistor Bc 540

    Abstract: transistor BC 341-6 transistor BC 660 transistor 3702 transistor 3707 transistor 2n 2222 transistor Bc 7 NPN transistor 2n 3904 transistors BC 225 transistor BC 310
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .


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    PDF BCW94 transistor Bc 540 transistor BC 341-6 transistor BC 660 transistor 3702 transistor 3707 transistor 2n 2222 transistor Bc 7 NPN transistor 2n 3904 transistors BC 225 transistor BC 310

    transistor bc 488

    Abstract: transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B
    Text: t h o m s o n -c s f general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A «0,2 A PNP v CEO 20 V B Ç 2 3 8 .


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    PDF BCW94 BC317P. transistor bc 488 transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B

    transistor BC 310

    Abstract: transistor bc 487 transistor BC 321 TRANSISTOR BC 416 b pnp bc 337-25 transistor TRANSISTOR BC 415 transistor bc 318 transistor BC 337-25 TRANSISTOR BC 413 bc 337-40 transistor
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m s o n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .


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    PDF BCW94 CB-76 BC317P. transistor BC 310 transistor bc 487 transistor BC 321 TRANSISTOR BC 416 b pnp bc 337-25 transistor TRANSISTOR BC 415 transistor bc 318 transistor BC 337-25 TRANSISTOR BC 413 bc 337-40 transistor

    Untitled

    Abstract: No abstract text available
    Text: Philips Sem iconductors Preliminary specification NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL 1 RXB06150W SbE D • 7110fl2b D04bS42 ^ET FEATURES DESCRIPTION APPLICATIONS • Suitable for short and medium pulse applications up to


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    PDF RXB06150W 7110fl2b D04bS42 FO-91B

    QM10TE-HB

    Abstract: bup transistor bvp DIODE QM10 QM10T
    Text: MITSUBISHI TRANSISTOR MODULES QM10TE-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM10TE-HB • Ic • V ce x • hFE Collector current. 10A [ Collector-emitter voltage. 600V j DC current gain.250


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    PDF QM10TE-HB E80276 E80271 QM10TE-HB bup transistor bvp DIODE QM10 QM10T

    k2917

    Abstract: ic l00a
    Text: TO SHIBA 2SK2917 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2S K29 17 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Sorce O N Resistance


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    PDF 2SK2917 --90V, k2917 ic l00a

    Untitled

    Abstract: No abstract text available
    Text: 2SK2917 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 7<;ii5Q17 M F • m. v ■ m HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE


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    PDF 2SK2917 ii5Q17